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    SI1012 Price and Stock

    Vishay Siliconix SI1012R-T1-GE3

    MOSFET N-CH 20V 500MA SC75A
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    DigiKey SI1012R-T1-GE3 Cut Tape 158,385 1
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    SI1012R-T1-GE3 Digi-Reel 158,385 1
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    SI1012R-T1-GE3 Reel 153,000 3,000
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    New Advantage Corporation SI1012R-T1-GE3 36,000 1
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    Vishay Siliconix SI1012CR-T1-GE3

    MOSFET N-CH 20V SC75A
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    DigiKey SI1012CR-T1-GE3 Digi-Reel 83,459 1
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    SI1012CR-T1-GE3 Cut Tape 83,459 1
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    SI1012CR-T1-GE3 Reel 78,000 3,000
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    RS SI1012CR-T1-GE3 Bulk 3,000
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    ES Components SI1012CR-T1-GE3
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    New Advantage Corporation SI1012CR-T1-GE3 36,000 1
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    Vishay Siliconix SI1012X-T1-GE3

    MOSFET N-CH 20V 500MA SC89-3
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    DigiKey SI1012X-T1-GE3 Cut Tape 10,179 1
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    SI1012X-T1-GE3 Digi-Reel 10,179 1
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    SI1012X-T1-GE3 Reel 6,000 3,000
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    Silicon Laboratories Inc SI1012-C-GM2

    IC RF TXRX+MCU ISM<1GHZ 42LGA
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    DigiKey SI1012-C-GM2 Tray 364 1
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    Mouser Electronics SI1012-C-GM2 364
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    Symmetry Electronics SI1012-C-GM2 1
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    Micro Commercial Components SI1012-TP

    MOSFET N-CH 20V 500MA SOT523
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    New Advantage Corporation SI1012-TP 18,000 1
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    SI1012 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1012-A-GM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX MCU + EZRADIOPRO Original PDF
    SI1012-A-GMR Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX MCU + EZRADIOPRO Original PDF
    SI1012-C-GM2 Silicon Laboratories RF Transceivers, RF/IF and RFID, 16KB 768B RAM 13DB XCVR 42LGA Original PDF
    SI1012-C-GM2R Silicon Laboratories RF Transceivers, RF/IF and RFID, IC MCU 16KB FLASH EZ PRO 42LGA Original PDF
    SI1012CR-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 630MA SC-75A Original PDF
    Si1012R Vishay Intertechnology N-Channel 1.8-V (G-S) MOSFET Original PDF
    SI1012R Vishay Siliconix MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth, Original PDF
    SI1012R Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET Original PDF
    Si1012R-E3 Vishay Transistor Mosfet N-CH 20V 0.5A 3SC-75A Original PDF
    Si1012R-T1 Vishay Transistor Mosfet N-CH 20V 0.5A 3SC-75A REEL Original PDF
    Si1012R-T1 Vishay Intertechnology N-Channel 1.8-V (G-S) MOSFET Original PDF
    Si1012R-T1-E3 Vishay Transistor Mosfet N-CH 20V 0.5A 3SC-75A REEL Original PDF
    SI1012R-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC-75A Original PDF
    SI1012R-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC-75A Original PDF
    SI1012-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL MOSFET, SOT-523 PACKAG Original PDF
    Si1012X Vishay Intertechnology N-Channel 1.8-V (G-S) MOSFET Original PDF
    Si1012X Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET Original PDF
    Si1012X-E3 Vishay Transistor Mosfet N-CH 20V 0.5A 3SC-89 Original PDF
    Si1012X-T1 Vishay Intertechnology N-Channel 1.8-V (G-S) MOSFET Original PDF
    SI1012X-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 500MA SC89-3 Original PDF

    SI1012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si1012CR 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


    Original     		PDF Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SC-75

    Abstract: SC-75A SC-89 Si1012R-T1 Si1012X-T1
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated


    Original     		PDF Si1012R/X SC-75A SC-89 Si1012R-Ted 08-Apr-05 SC-75 SC-89 Si1012R-T1 Si1012X-T1

    Si1012X-T1-GE3

    Abstract: No abstract text available
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X 2002/95/EC SC-75A SC-89 18-Jul-08 Si1012X-T1-GE3

    Si1012R

    Abstract: No abstract text available
    Text: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1012R S-51298Rev. 27-Jul-05

    Si1012R

    Abstract: No abstract text available
    Text: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1012R 400mA 150mA, 200mA, 250mA 19-Feb-04

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


    Original     		PDF Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


    Original     		PDF Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI1012X-T1-GE3

    Abstract: si1012r-t1-ge3
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X 2002/95/EC SC-75A SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI1012X-T1-GE3 si1012r-t1-ge3

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1012CR 2002/95/EC SC-75A 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1012CR 2002/95/EC SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X 2002/95/EC SC-75A SC-89 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


    Original     		PDF Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    AN609

    Abstract: Si1012R n mosfet pspice parameters
    Text: Si1012R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1012R AN609 02-Apr-07 n mosfet pspice parameters

    Untitled

    Abstract: No abstract text available
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated


    Original     		PDF Si1012R/X SC-75A SC-89 S-50366--Rev. 28-Feb-05

    SC-75

    Abstract: SC-75A SC-89 PC2255
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X 2002/95/EC SC-75A SC-89 11-Mar-11 SC-75 SC-89 PC2255

    Si1012R-T1-E3

    Abstract: Si1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-75A SC-89 SI1012R-T1-GE3
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • Halogen-free Option Available TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X SC-75A SC-89 Si1012R-T1-E3 Si1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-89 SI1012R-T1-GE3

    Si1012CR-T1-GE3

    Abstract: SI1012CR
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1012CR 2002/95/EC SC-75A Si1012CR-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


    Original     		PDF Si1012CR SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI1012X-T1-E3

    Abstract: Si1012X-T1-GE3 SI1012R/X SC-75 SC-75A SC-89 Si1012R-T1-E3 S-81543-Rev
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • Halogen-free Option Available TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si1012R/X SC-75A SC-89 18-Jul-08 SI1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-89 Si1012R-T1-E3 S-81543-Rev

    Untitled

    Abstract: No abstract text available
    Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


    Original     		PDF Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SC-75

    Abstract: SC-75A SC-89 Si1012R Si1012X
    Text: Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF Si1012R/X S-02464--Rev. 25-Oct-00 SC-75 SC-75A SC-89 Si1012R Si1012X

    Si1012-A

    Abstract: SI1012-A-GM CIP-51
    Text: Si1012-A Ultra-Low Power 16 kB, 12-bit ADC MCU with Integrated 240–960 MHz Transceiver Transceiver Features Supply Voltage: 1.8 to 3.6 V - Typical sleep mode current < 0.1 µA; retains state and RAM contents over full supply range; fast wakeup of < 2 µs


    Original     		PDF Si1012-A 12-bit 16-bit 32-bit 512-byte SI1012-A-GM CIP-51

    SI1012CR

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


    Original     		PDF Si1012CR SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12