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    SI1013 Price and Stock

    Vishay Siliconix SI1013R-T1-GE3

    MOSFET P-CH 20V 350MA SC75A
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    DigiKey SI1013R-T1-GE3 Reel 78,000 3,000
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    SI1013R-T1-GE3 Cut Tape 5,398 1
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    SI1013R-T1-GE3 Digi-Reel 1
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    RS SI1013R-T1-GE3 Bulk 420 1
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    Bristol Electronics SI1013R-T1-GE3 2,705 8
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    SI1013R-T1-GE3 2,198 8
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    Quest Components SI1013R-T1-GE3 2,164
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    SI1013R-T1-GE3 2,164
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    SI1013R-T1-GE3 1,758
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    SI1013R-T1-GE3 1,758
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    SI1013R-T1-GE3 6
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    SI1013R-T1-GE3 6
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    ES Components SI1013R-T1-GE3
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    New Advantage Corporation SI1013R-T1-GE3 12,000 1
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    Vishay Siliconix SI1013CX-T1-GE3

    MOSFET P-CH 20V 450MA SC89-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI1013CX-T1-GE3 Reel 63,000 3,000
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    SI1013CX-T1-GE3 Cut Tape 756 1
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    New Advantage Corporation SI1013CX-T1-GE3 732,000 1
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    Flip Electronics SI1013-C-GM2

    IC RF TXRX+MCU ISM<1GHZ 42LGA
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    DigiKey SI1013-C-GM2 Tray 9,297 100
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    Vishay Siliconix SI1013X-T1-GE3

    MOSFET P-CH 20V 350MA SC89-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI1013X-T1-GE3 Reel 9,000 3,000
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    SI1013X-T1-GE3 Cut Tape 4,631 1
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    Bristol Electronics SI1013X-T1-GE3 2,740 8
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    Quest Components SI1013X-T1-GE3 2,192
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    SI1013X-T1-GE3 2,192
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    ES Components SI1013X-T1-GE3
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    Silicon Laboratories Inc SI1013-C-GM2R

    IC RF TXRX+MCU ISM<1GHZ 42LGA
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    DigiKey SI1013-C-GM2R Reel
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    Find more SI1013 price and stock on Findchips.com

    SI1013 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI1013-A-GM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX MCU + EZRADIOPRO Original PDF
    SI1013-A-GMR Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX MCU + EZRADIOPRO Original PDF
    SI1013-C-GM2 Silicon Laboratories RF Transceivers, RF/IF and RFID, 8KB 768B RAM 13DB XCVR 42LGA Original PDF
    SI1013-C-GM2R Silicon Laboratories RF Transceivers, RF/IF and RFID, IC MCU 8KB FLASH EZ PRO 42LGA Original PDF
    SI1013CX-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 450MA SC89-3 Original PDF
    Si1013R Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI1013R Vishay Siliconix MOSFET, P SC-75AMOSFET, P SC-75A; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.35A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:2.7R; SMD:1; Case style, Original PDF
    SI1013R Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET Original PDF
    Si1013R-E3 Vishay Transistor Mosfet P-CH 20V 0.35A 3SC-75A Original PDF
    SI1013R-T1 Vishay Transistor Mosfet P-CH 20V 0.35A 3SC-75A REEL Original PDF
    Si1013R-T1 Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI1013R-T1-E3 Vishay Transistor Mosfet P-CH 20V 0.35A 3SC-75A REEL Original PDF
    SI1013R-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 350MA SC-75A Original PDF
    SI1013R-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 350MA SC-75A Original PDF
    Si1013X Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI1013X Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET Original PDF
    Si1013X-T1 Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI1013X-T1-E3 Vishay Transistor Mosfet P-CH 20V 0.35A 3SC-75A REEL Original PDF
    SI1013X-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 350MA SC89-3 Original PDF
    SI1013X-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 350MA SC89-3 Original PDF

    SI1013 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI1013CX

    Abstract: 71377
    Text: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1013CX 2002/95/EC SC-89 Si1013CX-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 71377

    si1013r

    Abstract: SI1013X-T1-GE3 SC-75 SC-75A SC-89 Si1013R-T1-E3 Si1013X Si1013X-T1-E3 VISHAY MARKING Sc
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 • Halogen-free Option Available • High-Side Switching •


    Original     		PDF Si1013R/X SC-75A SC-89 SC-75A OT-416) Si1013R OT-490) Si1013X Si1013R-T1-E3 SI1013X-T1-GE3 SC-75 SC-89 Si1013X-T1-E3 VISHAY MARKING Sc

    SC-75

    Abstract: SC-75A SC-89 Si1013R Si1013X Si1013X-T1-GE3
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1013R/X SC-75A SC-89 2002/95/EC SC-75A OT-416) Si1013R OT-490) Si1013X SC-75 SC-89 Si1013X-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1013R/X SC-75A SC-89 2002/95/EC SC-75A OT-416) Si1013R OT-490) Si1013X

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1013R/X 2002/95/EC SC-75A SC-89 SC-75A OT-416) Si1013R 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1013CX www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET power MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) ID (A) 0.760 at VGS = -4.5 V -0.45 1.040 at VGS = -2.5 V -0.40 1.500 at VGS = -1.8 V -0.32 Qg (TYP.) (nC) • 100 % Rg tested


    Original     		PDF Si1013CX SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SC-75A

    Abstract: Si1013X-T1-E3 SC-75 SC-89 Si1013R Si1013R-T1-E3 Si1013X Si1013X-T1-GE3
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 • Halogen-free Option Available • High-Side Switching •


    Original     		PDF Si1013R/X SC-75A SC-89 SC-75A OT-416) Si1013R OT-490) Si1013X Si1013R-T1-E3 Si1013X-T1-E3 SC-75 SC-89 Si1013X-T1-GE3

    2 pin crystal oscillator 24.5 mhz

    Abstract: CIP-51 Si1013-A-GM XCVR
    Text: Si1013-A Ultra-Low Power 8 kB, 12-bit ADC MCU with Integrated 240–960 MHz Transceiver Supply Voltage: 1.8 to 3.6 V - Typical sleep mode current < 0.1 µA; retains state and RAM contents over full supply range; fast wakeup of < 2 µs - Two built-in brown-out detectors cover sleep and active modes


    Original     		PDF Si1013-A 12-bit 16-bit 42-pin 2 pin crystal oscillator 24.5 mhz CIP-51 Si1013-A-GM XCVR

    SC-89-3

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1013R/X 2002/95/EC SC-75A SC-89 SC-75A OT-416) Si1013R 2011/65/EU 2002/95/EC. 2002/95/EC SC-89-3

    Untitled

    Abstract: No abstract text available
    Text: Si1013CX_GE-3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si1013CX AN609, 9073u 4448u 8267m 1647m 15-Jun-11

    Untitled

    Abstract: No abstract text available
    Text: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1013CX 2002/95/EC SC-89 Si1013CX-T1-GE3 11-Mar-11

    AN609

    Abstract: Si1013R
    Text: Si1013R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1013R AN609 02-Apr-07

    Untitled

    Abstract: No abstract text available
    Text: Specification Comparison www.vishay.com Vishay Siliconix Si1013CX vs. Si1013X Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SC89-3 Identical Part Number Replacements: Si1013CX-T1-GE3 replaces Si1013X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si1013CX Si1013X SC89-3 Si1013CX-T1-GE3 Si1013X-T1-GE3 11-Jun-13

    SOT-490

    Abstract: SC-75 SC-75A SC-89 Si1013R Si1013X
    Text: Si1013R/X New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 1.2 @ VGS = –4.5 V –350 –20 1.6 @ VGS = –2.5 V –300 2.7 @ VGS = –1.8 V –150 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF Si1013R/X S-02464--Rev. 25-Oct-00 SOT-490 SC-75 SC-75A SC-89 Si1013R Si1013X

    SC-75

    Abstract: SC-75A SC-89 Si1013R Si1013X
    Text: Si1013R/X New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 1.2 @ VGS = –4.5 V –350 –20 1.6 @ VGS = –2.5 V –300 2.7 @ VGS = –1.8 V –150 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF Si1013R/X 08-Apr-05 SC-75 SC-75A SC-89 Si1013R Si1013X

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1013R/X 2002/95/EC SC-75A SC-89 SC-75A OT-416) Si1013R 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1013CX 2002/95/EC SC-89 Si1013CX-T1-GE3 11-Mar-11

    Si1013R

    Abstract: No abstract text available
    Text: SPICE Device Model Si1013R Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1013R 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1013R/X 2002/95/EC SC-75A SC-89 SC-75A OT-416) Si1013R 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1013CX 2002/95/EC SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    UPG2214TB6SM

    Abstract: SI4432 1SJ5 upg2214tb CP240x SI1000 Silabs iar 8051 examples coin cell pc battery holders pc motherboard schematics
    Text: Si10xx-DK Si1000 A N D Si1010 D E V E L O P M E N T K I T U SER ’ S G UIDE 1. Relevant Devices The Si1000 and Si1010 Development Kits are intended as development platforms for the microcontrollers in the Si100x and Si101x MCU family, respectively. The members of these MCU families include Si1000, Si1001, Si1002,


    Original     		PDF Si10xx-DK Si1000 Si1010 Si100x Si101x Si1000, Si1001, Si1002, UPG2214TB6SM SI4432 1SJ5 upg2214tb CP240x Silabs iar 8051 examples coin cell pc battery holders pc motherboard schematics

    sil f330

    Abstract: sil f331 SIL T630 8051 f310 SIL F330 QFN20 C8051T602 C8051F120DK C8051F350DK C8051F360 samples C8051F544
    Text: MICROCONTROLLER PRODUCT SELECTOR GUIDE www.silabs.com Robust Tools, Software and Support Our developer ecosystem ensures that you’ll have everything you need to hit the ground running. Advanced debug features enable you to fully develop and integrate hardware and software design.


    Original     		PDF SEL-MCU-2010L sil f330 sil f331 SIL T630 8051 f310 SIL F330 QFN20 C8051T602 C8051F120DK C8051F350DK C8051F360 samples C8051F544

    t416

    Abstract: No abstract text available
    Text: SM013R/X New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET * * * & PRODUCT SUMMARY r D S (o n) ( & ) lD(mA) 1.2 @ V GS= -4 .5 V -3 5 0 1.6 @ V GS = -2 .5 V -3 0 0 2.7 V -1 5 0 VDS(V) ' A v *N -2 0 @ V Gs = -1 .8 ( £ ) ESD Protected 2000 V FEATURES


    OCR Scan     		PDF SM013R/X 1013R/X SC-75A) S-02464-- 25-Oct-OO t416

    Untitled

    Abstract: No abstract text available
    Text: Re e 1 : 1 E LEC T R IC A L SPEC IFIC A T IO N S! 1.0 TURNS RATIO NDTES P 6 - P B - P 3 : ( J 6 - J 3 ) : 1CT : 1 ± 3 / <P2-P7-P1> i ( J 2 - J D I 1CT I 1,4 ± 3 °/. i 200uH MIN, @ 0,01V, lOKHz 2.0 INDUCTANCE (P 6 - P 3 )= (J6 - J3 > i lOOuH MIN, @ 0,01V, lOKHz


    OCR Scan     		PDF 200uH 1500VAC I-10133 UL94-- CT640041C1