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Vishay Siliconix SI1016CX-T1-GE3 MOSFET N/P-CH 20V SC89 PCB Symbol, Footprint & 3D Model
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DigiKey ()	SI1016CX-T1-GE3	Digi-Reel	16,049		1	1 $0.46 10 $0.331 100 $0.1836 1000 $0.14281 10000 $0.14281	Buy Now
	SI1016CX-T1-GE3	Cut Tape	16,049		1	1 $0.46 10 $0.331 100 $0.1836 1000 $0.14281 10000 $0.14281	Buy Now
	SI1016CX-T1-GE3	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.09792	Buy Now
RS	SI1016CX-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.291	Get Quote
PFLITSCH GmbH & Co KG EBFSI-10-16-BK CORRUGATED PIPE FITTING WITH FEM
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DigiKey	EBFSI-10-16-BK	Bag			50	1 - 10 - 100 $4.3938 1000 $4.3938 10000 $4.3938	Buy Now
PFLITSCH GmbH & Co KG EMBFSI-10-16-BK STRAIGHT CONDUIT FITTING WITH IN
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DigiKey	EMBFSI-10-16-BK	Bag			50	1 - 10 - 100 $5.973 1000 $5.973 10000 $5.973	Buy Now
Lattice Semiconductor Corporation ISPLSI-1016-60LJ IC CPLD 64MC 20NS 44PLCC
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DigiKey	ISPLSI-1016-60LJ	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Lattice Semiconductor Corporation ISPLSI-1016-90LJ IC CPLD 64MC 12NS 44PLCC
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DigiKey	ISPLSI-1016-90LJ	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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SI1016 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI1016CX-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V SC89-6	Original	PDF		12
Si1016X	Vishay Intertechnology	Complementary N-and P-Channel 20-V (D-S) MOSFET	Original	PDF	51.17KB	7
SI1016X	Vishay Siliconix	Complementary N and P-Channel 20-V (D-S) MOSFET	Original	PDF	51.18KB	7
Si1016X-E3	Vishay	Transistor Mosfet N-CH P-CH 20V 0.485A 0.37A 6SOT-563	Original	PDF	81.39KB	8
Si1016X-T1	Vishay	Transistor Mosfet N-CH/P-CH 20V 0.485A/0.37A 6SOT-563 REEL	Original	PDF	81.39KB	8
Si1016X-T1-E3	Vishay	Transistor Mosfet N-CH/P-CH 20V 0.485A/0.37A 6SOT-563 REEL	Original	PDF	81.39KB	8
SI1016X-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 485MA SOT563F	Original	PDF		10
SI1016X-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 485MA SC89-6	Original	PDF		10

SI1016 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches	Original	Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	Si1016X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si1016x-t1-ge3 Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V	Original	Si1016X OT-563 SC-89 18-Jul-08 si1016x-t1-ge3	PDF
SC-89 Abstract: Si1016X Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	Si1016X 2002/95/EC OT-563 SC-89 11-Mar-11 SC-89	PDF
SI1016X Abstract: transistor 2432 Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	Si1016X 2002/95/EC OT-563 SC-89 18-Jul-08 transistor 2432	PDF
Contextual Info: Si1016CX_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si1016CX AN609, 1333u 4747u 1949m 1247m 28-Mar-11	PDF
Contextual Info: SPICE Device Model Si1016CX www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	Si1016CX 2002/95/EC 11-Mar-11	PDF
Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	Si1016X 2002/95/EC OT-563 SC-89 11-Mar-11	PDF
SC-89 Abstract: Si1016X Si1016X-T1 Si1016X-T1-E3 Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 rDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V	Original	Si1016X OT-563 SC-89 08-Apr-05 SC-89 Si1016X-T1 Si1016X-T1-E3	PDF
AN609 Abstract: Si1016X Contextual Info: Si1016X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si1016X AN609 02-Apr-07	PDF
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	Si1016CX 2002/95/EC 11-Mar-11	PDF
SC-89 Abstract: Si1016X Si1016X-T1-E3 Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V	Original	Si1016X OT-563 SC-89 08-Apr-05 SC-89 Si1016X-T1-E3	PDF

Contextual Info: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches	Original	Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si1016CX Abstract: si1016x-t1-ge3 SI1016X Contextual Info: Specification Comparison Vishay Siliconix Si1016CX vs. Si1016X Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs SC-89 Identical Part Number Replacements: Si1016CX-T1-GE3 replaces Si1016X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	Si1016CX Si1016X SC-89 Si1016CX-T1-GE3 Si1016X-T1-GE3 21-Apr-11	PDF
SI1016CX Abstract: sot-563 MOSFET D1 SI-101 Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	Si1016CX 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 sot-563 MOSFET D1 SI-101	PDF
SC-89 Abstract: Si1016X Contextual Info: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400	Original	Si1016X 08-Apr-05 SC-89	PDF
si1016x-t1-ge3 Abstract: SC-89 Si1016X Si1016X-T1-E3 Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V	Original	Si1016X OT-563 SC-89 18-Jul-08 si1016x-t1-ge3 SC-89 Si1016X-T1-E3	PDF
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	Si1016CX 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	Si1016X 2002/95/EC OT-563 SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SC-89 Abstract: Si1016X Contextual Info: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400	Original	Si1016X S-03104--Rev. 08-Feb-01 SC-89	PDF
Contextual Info: TPS65120, TPS65121, TPS65123, TPS65124 www.ti.com SLVS531A – JUNE 2004 – REVISED MARCH 2005 SINGLE-INDUCTOR QUADRUPLE-OUTPUT TFT LCD POWER SUPPLY • FEATURES • • • • Main Output, VMAIN – Adjustable Voltage, 3.0 V to 5.6 V/25 mA – Post-Regulated for Low Ripple 5mVPP	Original	TPS65120, TPS65121, TPS65123, TPS65124 SLVS531A	PDF
QFN-16 Abstract: TPS65120 TPS65120RGT TPS65121 TPS65121RGT TPS65123 TPS65123RGT TPS65124 LQ LB1608 Contextual Info: TPS65120, TPS65121, TPS65123, TPS65124 www.ti.com SLVS531A – JUNE 2004 – REVISED MARCH 2005 SINGLE-INDUCTOR QUADRUPLE-OUTPUT TFT LCD POWER SUPPLY • FEATURES • • • • Main Output, VMAIN – Adjustable Voltage, 3.0 V to 5.6 V/25 mA – Post-Regulated for Low Ripple 5mVPP	Original	TPS65120, TPS65121, TPS65123, TPS65124 SLVS531A 16-Pin QFN-16 TPS65120 TPS65120RGT TPS65121 TPS65121RGT TPS65123 TPS65123RGT TPS65124 LQ LB1608	PDF

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Lattice Semiconductor Corporation ISPLSI-1016-90LJ

SI1016 Datasheets (8)

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