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    SI2312 Price and Stock

    Vishay Siliconix SI2312CDS-T1-GE3

    MOSFET N-CH 20V 6A SOT23-3
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    DigiKey SI2312CDS-T1-GE3 Reel 105,000 3,000
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    RS SI2312CDS-T1-GE3 Bulk 3,000
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    Quest Components SI2312CDS-T1-GE3 916
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    New Advantage Corporation SI2312CDS-T1-GE3 39,000 1
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    Vishay Siliconix SI2312BDS-T1-GE3

    MOSFET N-CH 20V 3.9A SOT23-3
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    DigiKey SI2312BDS-T1-GE3 Reel 33,000 3,000
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    New Advantage Corporation SI2312BDS-T1-GE3 12,000 1
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    Vishay Siliconix SI2312BDS-T1-E3

    MOSFET N-CH 20V 3.9A SOT23-3
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    DigiKey SI2312BDS-T1-E3 Digi-Reel 27,588 1
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    SI2312BDS-T1-E3 Cut Tape 27,588 1
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    SI2312BDS-T1-E3 Reel 18,000 3,000
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    RS SI2312BDS-T1-E3 Bulk 3,000
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    Quest Components SI2312BDS-T1-E3 81
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    New Advantage Corporation SI2312BDS-T1-E3 369,000 1
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    Vishay Siliconix SI2312BDS-T1-BE3

    N-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI2312BDS-T1-BE3 Cut Tape 4,177 1
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    SI2312BDS-T1-BE3 Digi-Reel 4,177 1
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    SI2312BDS-T1-BE3 Reel 3,000 3,000
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    Vishay Siliconix SI2312CDS-T1-BE3

    N-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI2312CDS-T1-BE3 Digi-Reel 3,353 1
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    SI2312CDS-T1-BE3 Cut Tape 3,353 1
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    SI2312CDS-T1-BE3 Reel 3,000 3,000
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    SI2312 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2312BDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET Original PDF
    SI2312BDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 3.9A SOT23-3 Original PDF
    SI2312BDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 3.9A SOT23-3 Original PDF
    SI2312CDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 6A SOT-23 Original PDF
    SI2312DS Vishay Siliconix N-Channel 20-V (D-S) MOSFET Original PDF
    Si2312DS SPICE Device Model Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    SI2312DS-T1 Vishay Siliconix N-Channel 20-V (D-S) MOSFET Original PDF
    SI2312-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL MOSFET, SOT-23 PACKAGE Original PDF

    SI2312 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET SOT-23 marking code M2

    Abstract: No abstract text available
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC MOSFET SOT-23 marking code M2

    Si2312CDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2312CDS 18-Jul-08

    C2 marking code

    Abstract: No abstract text available
    Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2312DS O-236 OT-23) S-21090--Rev. 01-Jun-02 C2 marking code

    AN609

    Abstract: Si2312BDS
    Text: Si2312BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2312BDS AN609 03-May-07

    AN609

    Abstract: Si2312DS
    Text: Si2312DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2312DS AN609 22-Aug-05

    Si2312DS

    Abstract: Si2312DS-T1 Si2312DS-T1-E3
    Text: Si2312DS Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 D 1.8-V Rated D RoHS Compliant Qg (Typ) Pb-free Available 11.2 TO-236 (SOT-23)


    Original     		PDF Si2312DS O-236 OT-23) Si2312DS-T1 Si2312DS-T1--E3 18-Jul-08 Si2312DS-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2312CDS www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2312CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2312DS O-236 OT-23) S-03082--Rev. 12-Feb-01

    SI2312DS-T1-E3

    Abstract: No abstract text available
    Text: Si2312DS Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 D 1.8-V Rated D RoHS Compliant Qg (Typ) Pb-free Available 11.2 TO-236 (SOT-23)


    Original     		PDF Si2312DS O-236 OT-23) Si2312DS-T1 Si2312DS-T1--E3 S-50574--Rev. 04-Apr-05 SI2312DS-T1-E3

    Si2312BDS

    Abstract: Si2312BDS-T1-GE3 Si2312BDS-T1-E3 m2 marking
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 18-Jul-08 m2 marking

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0318 at VGS = 4.5 V 6a 0.0356 at VGS = 2.5 V 6a 0.0414 at VGS = 1.8 V 5.6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si2312CDS 2002/95/EC OT-23 Si2312CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI2312BDS

    Abstract: 50396
    Text: SPICE Device Model Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2312BDS S-50396Rev. 14-Mar-05 50396

    SI2312BDS-T1-GE3

    Abstract: Si2312BDS Si2312BDS-T1-E3
    Text: Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si2312BDS O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 08-Apr-05

    1740S

    Abstract: Si2312DS Si2312DS SPICE Device Model
    Text: SPICE Device Model Si2312DS Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2312DS 13-Apr-01 1740S Si2312DS SPICE Device Model

    Untitled

    Abstract: No abstract text available
    Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2312DS O-236 OT-23) S-02538--Rev. 20-Nov-00

    Untitled

    Abstract: No abstract text available
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si2312BDS-T1-E3

    Abstract: MOSFET SOT-23 marking code M2 Si2312BDS
    Text: Si2312BDS New Product Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 0.047 @ VGS = 1.8 V 4.1 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 7.5 TO-236


    Original     		PDF Si2312BDS O-236 OT-23) Si2312BDS-T1--E3 08-Apr-05 Si2312BDS-T1-E3 MOSFET SOT-23 marking code M2

    Si2312DS-T1-E3

    Abstract: Si2312BDS-T1-E3 SI2312BDS Si2312DS Si2312DS-T1
    Text: Specification Comparison Vishay Siliconix Si2312BDS vs. Si2312DS Description: N-Channel, 20 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2312BDS-T1-E3 Replaces Si2312DS-T1-E3 Si2312BDS-T1-E3 Replaces Si2312DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si2312BDS Si2312DS OT-23 Si2312BDS-T1-E3 Si2312DS-T1-E3 Si2312DS-T1 06-Nov-06

    SI2312cDS

    Abstract: AN609
    Text: Si2312CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2312CDS AN609, 02-Mar-10 AN609

    SI2312CDS

    Abstract: SI2312bDS SI2312BDS-T1-GE3
    Text: Specification Comparison Vishay Siliconix Si2312CDS vs. Si2312BDS Description: Package: Pin Out: N-Channel, 20 V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2312CDS-T1-GE3 replaces Si2312BDS-T1-GE3 Si2312CDS-T1-GE3 replaces Si2312BDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si2312CDS Si2312BDS OT-23 Si2312CDS-T1-GE3 Si2312BDS-T1-GE3

    MOSFET SOT-23 marking code M2

    Abstract: SI2312BDS-T1-GE3 SI2312BDS Si2312BDS-T1-E3
    Text: Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si2312BDS O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 18-Jul-08 MOSFET SOT-23 marking code M2

    SI2312BDS-T1-E3

    Abstract: No abstract text available
    Text: Si2312BDS New Product Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 0.047 @ VGS = 1.8 V 4.1 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 7.5 TO-236


    Original     		PDF Si2312BDS O-236 OT-23) Si2312BDS-T1--E3 S-50136--Rev. 24-Jan-05 SI2312BDS-T1-E3

    Si2312BDS-T1-GE3

    Abstract: Si2312BDS-T1-E3 Si2312BDS S10079 M2 MARKING CODE sot-23 CODE 41
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 11-Mar-11 S10079 M2 MARKING CODE sot-23 CODE 41

    SI2312cDS

    Abstract: S10-0641-Rev SI2312CDS-T1-GE3
    Text: New Product Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0318 at VGS = 4.5 V 6a 0.0356 at VGS = 2.5 V 6a 0.0414 at VGS = 1.8 V 5.6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si2312CDS 2002/95/EC OT-23 Si2312CDS-T1-GE3 18-Jul-08 S10-0641-Rev