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Vishay Siliconix SI2312CDS-T1-GE3 MOSFET N-CH 20V 6A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2312CDS-T1-GE3	Reel	101,150		3,000	1 - 10 - 100 - 1000 - 10000 $0.15917	Buy Now
RS	SI2312CDS-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.359	Get Quote
Quest Components	SI2312CDS-T1-GE3		5,588			1 $0.2634 10 $0.2634 100 $0.2634 1000 $0.2634 10000 $0.1054	Buy Now
New Advantage Corporation	SI2312CDS-T1-GE3		384,000		1	1 - 10 - 100 - 1000 - 10000 $0.1529	Buy Now
Vishay Siliconix SI2312BDS-T1-GE3 MOSFET N-CH 20V 3.9A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2312BDS-T1-GE3	Cut Tape	24,639		1	1 $0.83 10 $0.518 100 $0.83 1000 $0.23086 10000 $0.23086	Buy Now
	SI2312BDS-T1-GE3	Digi-Reel	24,639		1	1 $0.83 10 $0.518 100 $0.83 1000 $0.23086 10000 $0.23086	Buy Now
	SI2312BDS-T1-GE3	Reel	24,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.19859	Buy Now
New Advantage Corporation	SI2312BDS-T1-GE3		93,000		1	1 - 10 - 100 - 1000 - 10000 $0.2086	Buy Now
Vishay Siliconix SI2312BDS-T1-E3 MOSFET N-CH 20V 3.9A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2312BDS-T1-E3	Reel	12,800		3,000	1 - 10 - 100 - 1000 - 10000 $0.19859	Buy Now
RS	SI2312BDS-T1-E3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.461	Get Quote
Quest Components	SI2312BDS-T1-E3		1,079			1 $0.3264 10 $0.3264 100 $0.2176 1000 $0.1523 10000 $0.1523	Buy Now
New Advantage Corporation	SI2312BDS-T1-E3		195,000		1	1 - 10 - 100 - 1000 - 10000 $0.1336	Buy Now
Vishay Siliconix SI2312BDS-T1-BE3 N-CHANNEL 20-V (D-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2312BDS-T1-BE3	Cut Tape	4,878		1	1 $0.83 10 $0.518 100 $0.83 1000 $0.23086 10000 $0.23086	Buy Now
	SI2312BDS-T1-BE3	Digi-Reel	4,878		1	1 $0.83 10 $0.518 100 $0.83 1000 $0.23086 10000 $0.23086	Buy Now
	SI2312BDS-T1-BE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.19859	Buy Now
Vishay Siliconix SI2312CDS-T1-BE3 N-CHANNEL 20-V (D-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2312CDS-T1-BE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1157	Buy Now

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SI2312 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
SI2312BDS	Vishay Siliconix	N-Channel 20-V (D-S) MOSFET	Original	PDF
SI2312BDS-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 3.9A SOT23-3	Original	PDF
SI2312BDS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 3.9A SOT23-3	Original	PDF
SI2312CDS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 6A SOT-23	Original	PDF
SI2312DS	Vishay Siliconix	N-Channel 20-V (D-S) MOSFET	Original	PDF
Si2312DS SPICE Device Model	Vishay	N-Channel 20-V (D-S) MOSFET	Original	PDF
SI2312DS-T1	Vishay Siliconix	N-Channel 20-V (D-S) MOSFET	Original	PDF
SI2312-TP	Micro Commercial	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL MOSFET, SOT-23 PACKAGE	Original	PDF

SI2312 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MOSFET SOT-23 marking code M2 Abstract: No abstract text available Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC MOSFET SOT-23 marking code M2	PDF
Si2312CDS Abstract: No abstract text available Text: SPICE Device Model Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si2312CDS 18-Jul-08	PDF
C2 marking code Abstract: No abstract text available Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2312DS O-236 OT-23) S-21090--Rev. 01-Jun-02 C2 marking code	PDF
AN609 Abstract: Si2312BDS Text: Si2312BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si2312BDS AN609 03-May-07	PDF
AN609 Abstract: Si2312DS Text: Si2312DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si2312DS AN609 22-Aug-05	PDF
Si2312DS Abstract: Si2312DS-T1 Si2312DS-T1-E3 Text: Si2312DS Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 D 1.8-V Rated D RoHS Compliant Qg (Typ) Pb-free Available 11.2 TO-236 (SOT-23)	Original	Si2312DS O-236 OT-23) Si2312DS-T1 Si2312DS-T1--E3 18-Jul-08 Si2312DS-T1-E3	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si2312CDS www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C	Original	Si2312CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2312DS O-236 OT-23) S-03082--Rev. 12-Feb-01	PDF
SI2312DS-T1-E3 Abstract: No abstract text available Text: Si2312DS Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 D 1.8-V Rated D RoHS Compliant Qg (Typ) Pb-free Available 11.2 TO-236 (SOT-23)	Original	Si2312DS O-236 OT-23) Si2312DS-T1 Si2312DS-T1--E3 S-50574--Rev. 04-Apr-05 SI2312DS-T1-E3	PDF
Si2312BDS Abstract: Si2312BDS-T1-GE3 Si2312BDS-T1-E3 m2 marking Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 18-Jul-08 m2 marking	PDF
Untitled Abstract: No abstract text available Text: New Product Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0318 at VGS = 4.5 V 6a 0.0356 at VGS = 2.5 V 6a 0.0414 at VGS = 1.8 V 5.6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si2312CDS 2002/95/EC OT-23 Si2312CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI2312BDS Abstract: 50396 Text: SPICE Device Model Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si2312BDS S-50396Rev. 14-Mar-05 50396	PDF
SI2312BDS-T1-GE3 Abstract: Si2312BDS Si2312BDS-T1-E3 Text: Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si2312BDS O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 08-Apr-05	PDF
1740S Abstract: Si2312DS Si2312DS SPICE Device Model Text: SPICE Device Model Si2312DS Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si2312DS 13-Apr-01 1740S Si2312DS SPICE Device Model	PDF

Untitled Abstract: No abstract text available Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2312DS O-236 OT-23) S-02538--Rev. 20-Nov-00	PDF
Untitled Abstract: No abstract text available Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
Si2312BDS-T1-E3 Abstract: MOSFET SOT-23 marking code M2 Si2312BDS Text: Si2312BDS New Product Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 0.047 @ VGS = 1.8 V 4.1 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 7.5 TO-236	Original	Si2312BDS O-236 OT-23) Si2312BDS-T1--E3 08-Apr-05 Si2312BDS-T1-E3 MOSFET SOT-23 marking code M2	PDF
Si2312DS-T1-E3 Abstract: Si2312BDS-T1-E3 SI2312BDS Si2312DS Si2312DS-T1 Text: Specification Comparison Vishay Siliconix Si2312BDS vs. Si2312DS Description: N-Channel, 20 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2312BDS-T1-E3 Replaces Si2312DS-T1-E3 Si2312BDS-T1-E3 Replaces Si2312DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	Si2312BDS Si2312DS OT-23 Si2312BDS-T1-E3 Si2312DS-T1-E3 Si2312DS-T1 06-Nov-06	PDF
SI2312cDS Abstract: AN609 Text: Si2312CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si2312CDS AN609, 02-Mar-10 AN609	PDF
SI2312CDS Abstract: SI2312bDS SI2312BDS-T1-GE3 Text: Specification Comparison Vishay Siliconix Si2312CDS vs. Si2312BDS Description: Package: Pin Out: N-Channel, 20 V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2312CDS-T1-GE3 replaces Si2312BDS-T1-GE3 Si2312CDS-T1-GE3 replaces Si2312BDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	Si2312CDS Si2312BDS OT-23 Si2312CDS-T1-GE3 Si2312BDS-T1-GE3	PDF
MOSFET SOT-23 marking code M2 Abstract: SI2312BDS-T1-GE3 SI2312BDS Si2312BDS-T1-E3 Text: Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si2312BDS O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 18-Jul-08 MOSFET SOT-23 marking code M2	PDF
SI2312BDS-T1-E3 Abstract: No abstract text available Text: Si2312BDS New Product Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 0.047 @ VGS = 1.8 V 4.1 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 7.5 TO-236	Original	Si2312BDS O-236 OT-23) Si2312BDS-T1--E3 S-50136--Rev. 24-Jan-05 SI2312BDS-T1-E3	PDF
Si2312BDS-T1-GE3 Abstract: Si2312BDS-T1-E3 Si2312BDS S10079 M2 MARKING CODE sot-23 CODE 41 Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 11-Mar-11 S10079 M2 MARKING CODE sot-23 CODE 41	PDF
SI2312cDS Abstract: S10-0641-Rev SI2312CDS-T1-GE3 Text: New Product Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0318 at VGS = 4.5 V 6a 0.0356 at VGS = 2.5 V 6a 0.0414 at VGS = 1.8 V 5.6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si2312CDS 2002/95/EC OT-23 Si2312CDS-T1-GE3 18-Jul-08 S10-0641-Rev	PDF

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Vishay Siliconix SI2312CDS-T1-GE3

Vishay Siliconix SI2312BDS-T1-GE3

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Vishay Siliconix SI2312CDS-T1-BE3

SI2312 Datasheets (8)

SI2312 Datasheets Context Search

MOSFET SOT-23 marking code M2

Si2312CDS

C2 marking code

AN609

AN609

Si2312DS

Untitled

Untitled

SI2312DS-T1-E3

Si2312BDS

Untitled

SI2312BDS

SI2312BDS-T1-GE3

1740S

Untitled

Untitled

Si2312BDS-T1-E3

Si2312DS-T1-E3

SI2312cDS

SI2312CDS

MOSFET SOT-23 marking code M2

SI2312BDS-T1-E3

Si2312BDS-T1-GE3

SI2312cDS