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    SI2316 Price and Stock

    Vishay Siliconix SI2316BDS-T1-GE3

    MOSFET N-CH 30V 4.5A SOT23-3
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    DigiKey SI2316BDS-T1-GE3 Cut Tape 48,567 1
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    SI2316BDS-T1-GE3 Digi-Reel 48,567 1
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    SI2316BDS-T1-GE3 Reel 45,000 3,000
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    Quest Components SI2316BDS-T1-GE3 20
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    Vishay Siliconix SI2316BDS-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET
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    DigiKey SI2316BDS-T1-BE3 Digi-Reel 10,690 1
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    SI2316BDS-T1-BE3 Cut Tape 10,690 1
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    SI2316BDS-T1-BE3 Reel 6,000 3,000
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    Vishay Siliconix SI2316DS-T1-E3

    MOSFET N-CH 30V 2.9A SOT23-3
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    DigiKey SI2316DS-T1-E3 Cut Tape 10,582 1
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    SI2316DS-T1-E3 Digi-Reel 10,582 1
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    SI2316DS-T1-E3 Reel 9,000 3,000
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    New Advantage Corporation SI2316DS-T1-E3 3,000 1
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    Vishay Siliconix SI2316BDS-T1-E3

    MOSFET N-CH 30V 4.5A SOT23-3
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    DigiKey SI2316BDS-T1-E3 Cut Tape 5,798 1
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    SI2316BDS-T1-E3 Digi-Reel 5,798 1
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    SI2316BDS-T1-E3 Reel 3,000 3,000
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    RS SI2316BDS-T1-E3 Bulk 3,000
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    New Advantage Corporation SI2316BDS-T1-E3 6,000 1
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    Vishay Siliconix SI2316DS-T1-GE3

    MOSFET N-CH 30V 2.9A SOT23-3
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    DigiKey SI2316DS-T1-GE3 Reel 3,000
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    SI2316 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2316BDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.5A SOT-23 Original PDF
    SI2316BDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.5A SOT23-3 Original PDF
    Si2316DS Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI2316DS Vishay Siliconix MOSFETs Original PDF
    SI2316DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si2316DS SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI2316DS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.9A SOT23-3 Original PDF
    SI2316DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.9A SOT23-3 Original PDF

    SI2316 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si2316ds-t1-e3

    Abstract: No abstract text available
    Text: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS


    Original     		PDF Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 11-Mar-11

    Si2316BDS

    Abstract: Si2316BDS-T1-E3 Si2316DS
    Text: Specification Comparison Vishay Siliconix Si2316BDS vs. Si2316DS Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SOT-23 Identical Part Number Replacements Si2316BDS-T1-E3 Replaces Si2316DS-T1-E3 Si2316BDS-T1-E3 Replaces Si2316DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si2316BDS Si2316DS OT-23 Si2316BDS-T1-E3 Si2316DS-T1-E3 Si2316DS-T1 30-Aug-07

    Si2316DS

    Abstract: No abstract text available
    Text: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.050 @ VGS = 10 V 3.4 0.085 @ VGS = 4.5 V 2.6 APPLICATIONS D Battery Switch TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2316DS-T1


    Original     		PDF Si2316DS O-236 OT-23) Si2316DS-T1 S-31990--Rev. 13-Oct-03

    Si2316DS

    Abstract: No abstract text available
    Text: \\\ SPICE Device Model Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2316DS 0-to-10V 24-Jan-02

    Si2316BDS-T1-E3

    Abstract: Si2316DS 313B marking code 313b
    Text: New Product Si2316BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.5 0.080 at VGS = 4.5 V 3.4 Qg (Typ) • PWM Optimized • 100 % Rg tested 3.16 nC


    Original     		PDF Si2316BDS O-236 OT-23) Si2316DS Si2316BDS-T1-E3 08-Apr-05 313B marking code 313b

    Si2316DS

    Abstract: No abstract text available
    Text: Si2316DS New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.050 @ VGS = 10 V 3.4 0.085 @ VGS = 4.5 V 2.6 APPLICATIONS D Battery Switch TO-236 (SOT-23) G 1 3 S D 2 Top View


    Original     		PDF Si2316DS O-236 OT-23) S-05481--Rev. 21-Jan-02

    Untitled

    Abstract: No abstract text available
    Text: Si2316BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.5 0.080 at VGS = 4.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si2316BDS 2002/95/EC O-236 OT-23) Si2316DS Si2316BDS-T1-E3 Si2316BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    Si2316DS

    Abstract: No abstract text available
    Text: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS


    Original     		PDF Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 18-Jul-08

    Si2316BDS

    Abstract: marking code 313b Si2316BDS-T1-E3 Si2316DS 313b sot MARKING 313B
    Text: New Product Si2316BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.5 0.080 at VGS = 4.5 V 3.4 Qg (Typ) • PWM Optimized • 100 % Rg tested 3.16 nC


    Original     		PDF Si2316BDS O-236 OT-23) Si2316DS Si2316BDS-T1-E3 18-Jul-08 marking code 313b 313b sot MARKING 313B

    Si2316BDS-T1-E3

    Abstract: Si2316BDS-T1-GE3 Si2316DS
    Text: Si2316BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.5 0.080 at VGS = 4.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si2316BDS 2002/95/EC O-236 OT-23) Si2316DS Si2316BDS-T1-E3 Si2316BDS-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si2316BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.5 0.080 at VGS = 4.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si2316BDS 2002/95/EC O-236 OT-23) Si2316DS Si2316BDS-T1-E3 Si2316BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS


    Original     		PDF Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS


    Original     		PDF Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si2316BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.5 0.080 at VGS = 4.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si2316BDS 2002/95/EC O-236 OT-23) Si2316DS Si2316BDS-T1-E3 Si2316BDS-T1-GE3 11-Mar-11

    AN609

    Abstract: Si2316DS
    Text: Si2316DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2316DS AN609 22-Aug-05

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2316BDS Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2316BDS 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.050 @ VGS = 10 V 3.4 0.085 @ VGS = 4.5 V 2.6 APPLICATIONS D Battery Switch TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2316DS-T1


    Original     		PDF Si2316DS O-236 OT-23) Si2316DS-T1 08-Apr-05

    si2316ds-t1-e3

    Abstract: Si2316DS
    Text: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS


    Original     		PDF Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 11-Mar-11

    Si2316BDS-T1-E3

    Abstract: Si2316BDS-T1-GE3 Si2316DS
    Text: Si2316BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.5 0.080 at VGS = 4.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si2316BDS 2002/95/EC O-236 OT-23) Si2316DS Si2316BDS-T1-E3 Si2316BDS-T1-GE3 18-Jul-08

    74879 datasheet

    Abstract: 74879 Si2316BDS
    Text: SPICE Device Model Si2316BDS Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2316BDS S-71049Rev. 21-May-07 74879 datasheet 74879

    68302

    Abstract: diode in 5394 AN609
    Text: Si2316BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2316BDS AN609 19-Dec-07 68302 diode in 5394

    Si2316DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2316DS 18-Jul-08

    si2316ds-t1-e3

    Abstract: marking code vishay SILICONIX sot-23
    Text: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS


    Original     		PDF Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking code vishay SILICONIX sot-23

    sirf Atlas IV

    Abstract: sirf atlas v Atlas SIRF 4 LTC3577 LTC3577-3 sirf atlas 4 sirf iv 35773 Atlas SIRF 5 express card DVB
    Text: LTC3577-3/LTC3577-4 Highly Integrated Portable Product PMIC DESCRIPTION FEATURES n n n n n n n n n n n n Full Featured Li-Ion/Polymer Charger/PowerPath Controller with Instant-On Operation Triple Adjustable High Efficiency Step-Down Switching Regulators 800mA, 500mA, 500mA IOUT


    Original     		PDF LTC3577-3/LTC3577-4 800mA, 500mA, 500mA LTC3577-3) LTC3577-4) DFN14 LTC4098 600mA QFN20 sirf Atlas IV sirf atlas v Atlas SIRF 4 LTC3577 LTC3577-3 sirf atlas 4 sirf iv 35773 Atlas SIRF 5 express card DVB