A96V
Abstract: SI2328DS-T1-E3 Si2328DS
Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)
|
Original
|
Si2328DS
O-236
OT-23)
Si2328DS-T1
Si2328DS-T1--E3
08-Apr-05
A96V
SI2328DS-T1-E3
|
PDF
|
A96V
Abstract: si2328ds-t1 SI2328ds rev Si2328DS D8 marking
Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)
|
Original
|
Si2328DS
O-236
OT-23)
Si2328DS-T1
Si2328DS-T1--E3
18-Jul-08
A96V
SI2328ds rev
D8 marking
|
PDF
|
Si2328DS
Abstract: A96V
Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)
|
Original
|
Si2328DS
O-236
OT-23)
Si2328DS-T1
Si2328DS-T1--E3
S-41259--Rev.
05-Jul-04
A96V
|
PDF
|
SI2328ds rev
Abstract: Si2328DS Si2328DS-T1
Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
Si2328DS
O-236
OT-23)
Si2328DS-T1
S-31725--Rev.
18-Aug-03
SI2328ds rev
|
PDF
|
A96V
Abstract: Si2328DS SI2328ds rev
Text: Si2328DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2328DS (D8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
Si2328DS
O-236
OT-23)
S-05372--Rev.
25-Dec-01
A96V
SI2328ds rev
|
PDF
|
SI2328ds rev
Abstract: Si2328DS Si2328DS-T1-E3 si2328ds-t1-ge3 A96V
Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Available • 100 % Rg Tested • TrenchFET Power MOSFET TO-236 (SOT-23)
|
Original
|
Si2328DS
O-236
OT-23)
Si2328DS-T1-E3
Si2328DS-T1-GE3
11-Mar-11
SI2328ds rev
A96V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si2328DS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
|
Original
|
Si2328DS
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Available • 100 % Rg Tested • TrenchFET Power MOSFET TO-236 (SOT-23)
|
Original
|
Si2328DS
O-236
OT-23)
Si2328DS-T1-E3
Si2328DS-T1-GE3
11-Mar-11
|
PDF
|
Si2328DS
Abstract: No abstract text available
Text: SPICE Device Model Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si2328DS
S-50383Rev.
21-Mar-05
|
PDF
|
Si2328DS
Abstract: Si2328DS-T1-E3 A96V
Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Available • 100 % Rg Tested • TrenchFET Power MOSFET TO-236 (SOT-23)
|
Original
|
Si2328DS
O-236
OT-23)
Si2328DS-T1-E3
Si2328DS-T1-GE3
18-Jul-08
A96V
|
PDF
|
Si2328DS
Abstract: No abstract text available
Text: SPICE Device Model Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si2328DS
18-Jul-08
|
PDF
|
SI2328DS-T1-GE3
Abstract: No abstract text available
Text: Si2328DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg and UIS Tested • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
|
Original
|
Si2328DS
2002/95/EC
O-236
OT-23)
Si2328DS-T1-E3
Si2328DS-T1-GE3
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si2328DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg and UIS Tested • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
|
Original
|
Si2328DS
2002/95/EC
O-236
OT-23)
Si2328DS-T1-E3
Si2328DS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si2328DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg and UIS Tested • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
|
Original
|
Si2328DS
2002/95/EC
O-236
OT-23)
Si2328DS-T1-E3
Si2328DS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
|
PDF
|
|
|
LT3761
Abstract: BSC123N08N DC1772A 1N4148W 100V OPT R23 SOT23 E10 cooper BSC123N08NS3 RT111
Text: REVISION HISTORY ECO REV - 3 DESCRIPTION PRODUCTION APPROVED DATE KEITH S. 06-20-12 OPTIONAL FOR BUCK MODE C9 OPT. 1210 OUT PVIN PVIN 8V - 60V E1 E13 OUT C10 4.7uF 100V 1210 R15 OPT. 1206 D1 PDS5100H R11 1206 LED+ RS2 3 2 COOPER C1 4.7uF 100V 1210 M1 BSC123N08NS3
|
Original
|
HC9-100-R
4700pF
350kHz
121TO
LT3761EMSE
DC1772A
LT3761
BSC123N08N
DC1772A
1N4148W 100V OPT
R23 SOT23
E10 cooper
BSC123N08NS3
RT111
|
PDF
|
BLM31PG330SN1L
Abstract: VTM 48 DIODE 1N4001 SMT 1N4001 1N4148 2N7002 BAS16 BC817-25 MMSZ5254BT1 Si2328DS
Text: Application Note AN:003 Powering Multiple VTMs with a Single PRM By Doug Ping Principal Field Application Engineer, West Coast Introduction Contents Page Introduction 1 Theory of Operation 2 Conclusion 3 This Application Note discusses the design practices for using Vicor’s V•I Chip Pre-Regulator
|
Original
|
BAS16
MMSZ5254BT1
BLM31PG330SN1L
SLC7530D-101ML
2N7002
Si2328DS
BC817-25
BLM31PG330SN1L
VTM 48
DIODE 1N4001 SMT
1N4001
1N4148
2N7002
BAS16
BC817-25
MMSZ5254BT1
|
PDF
|
SLC7530D-101ML
Abstract: FPA101 BLM31PG330SN1L VTM 48 1N4001 1N4148 2N7002 BAS16 BC817-25 MMSZ5254BT1
Text: Application Note AN:003 Powering Multiple VTMs with a Single PRM By Doug Ping Principal Field Application Engineer, West Coast Introduction Contents Page Introduction 1 Theory of Operation 2 Conclusion 3 This Application Note discusses the design practices for using V•I Chip PRM Regulators and VTM
|
Original
|
BAS16
MMSZ5254BT1
BLM31PG330SN1L
SLC7530D-101ML
2N7002
Si2328DS
BC817-25
SLC7530D-101ML
FPA101
BLM31PG330SN1L
VTM 48
1N4001
1N4148
2N7002
BAS16
BC817-25
MMSZ5254BT1
|
PDF
|
2N7002
Abstract: BLM31PG330SN1L philips 2n7002 VTM 48 BC817-25 AN003 1N4001 1N4148 BAS16 MMSZ5254BT1
Text: 应用笔记 AN:003 单个PRM驱动多个VTMs 原著: Doug Ping 首席应用工程师 西岸 引言 内容 页 本应用笔记讨论使用Vicor之V•I晶片预稳压及电压转换模块的设计习要以符合功率系统上单 个系统要求低电压多路电流及多个电压的挑战。Vicor的V·I晶片能顾及这些挑战。
|
Original
|
92in2
29in2
VccVC14V9-15msPRMVTM
15VVC15VR7VTM150mA;
15V200mAVTM
Q33VC
BC817-25
2N7002
MMSZ5254BT1
2N7002
BLM31PG330SN1L
philips 2n7002
VTM 48
BC817-25
AN003
1N4001
1N4148
BAS16
MMSZ5254BT1
|
PDF
|
IN444
Abstract: in4448 LT3755 MBRS3100T3 zxm6ip03f LT3756 QFN 0808 tray LT3756-1 NCP18WM104 NCP18WM104J
Text: LT3756/LT3756-1 100VIN, 100VOUT LED Controller FEATURES n n n n n n n n n n n n n n n n DESCRIPTION 3000:1 True Color PWMTM Dimming Wide Input Voltage Range: 6V to 100V Output Voltage Up to 100V Constant-Current and Constant-Voltage Regulation 100mV High Side Current Sense
|
Original
|
LT3756/LT3756-1
100VIN,
100VOUT
100mV
100kHz
LT3756)
LT3756-1)
16-Lead
TSSOP16E
LT3518
IN444
in4448
LT3755
MBRS3100T3
zxm6ip03f
LT3756
QFN 0808 tray
LT3756-1
NCP18WM104
NCP18WM104J
|
PDF
|
C1608X7R1H104
Abstract: AN3639 luxeon driver schematic nichia led driver light dependent resistor circuit C3216X7R1C475K CMSH1-40M DO3308P-103 Si2328DS MAX16802B
Text: Maxim > App Notes > DISPLAY DRIVERS POWER-SUPPLY CIRCUITS Keywords: backlight LED driver, cree , nichia, ledtronics, Toyoda, agilent, xlamp, ostar led, high-power led, buck boost led driver, constant current, general lighting led driver, HB LED, HB LED driver, HB LEDs, HB-LED, white led lighting, white leds ,
|
Original
|
MAX16801A:
MAX16801B:
MAX16802A:
MAX16802B:
AN3639,
APP3639,
Appnote3639,
C1608X7R1H104
AN3639
luxeon driver schematic
nichia led driver
light dependent resistor circuit
C3216X7R1C475K
CMSH1-40M
DO3308P-103
Si2328DS
MAX16802B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Isolated Flyback Converter; Input +3060V; Output 5V 100mA Reference Design PRD1139 FEATURES • • Input - Output isolation Primary side control for low cost and improved efficiency DESCRIPTION This is an 30 - 60V input isolated flyback converter based on the ADP1613 boost regulator IC with a "cascode"
|
Original
|
100mA
PRD1139
ADP1613
ADCMP356
ADP1613
|
PDF
|
C3216X7R1H105K
Abstract: DR74-680-R GRM32ER71H475KA88 Si2328DS 3519f pwm circuits using 555 555 for dc dc boost converter 246 six pin switch si2337ds C3216X7R1E475K
Text: LT3519 LED Driver with Integrated Schottky Diode FEATURES n n n n n n n n n n n n n n DESCRIPTION Up to 3000:1 True Color PWM Dimming Wide Input Voltage Range Operation from 3V to 30V Transient Protection to 40V Floating LED Current Sense from 0V to 45V
|
Original
|
LT3519
750mA
400kHz
LT3519)
16-Lead
LT3591
3519f
C3216X7R1H105K
DR74-680-R
GRM32ER71H475KA88
Si2328DS
3519f
pwm circuits using 555
555 for dc dc boost converter
246 six pin switch
si2337ds
C3216X7R1E475K
|
PDF
|
resistor 5 k
Abstract: AN003 1N4001 1N4148 2N7002 BC817-25 MMSZ5254BT1 Si2328DS "5 V" ZENER DIODE DIODE CHIP 1N4148
Text: Application Note AN:003 Powering Multiple VTMs with a Single PRM 1つのPRMから複数のVTMへの給電 By Doug Ping Principal Field Application Engineer West Coast 目次 はじめに Page このアプリケーションノートでは複数の負荷に電力を供給する電源システムを、 つの PRM と複数
|
Original
|
MMSZ554BT
BLM3PG330SNL
SLC7530D-0ML
Si38DS
BC87-5
resistor 5 k
AN003
1N4001
1N4148
2N7002
BC817-25
MMSZ5254BT1
Si2328DS
"5 V" ZENER DIODE
DIODE CHIP 1N4148
|
PDF
|
Untitled
Abstract: No abstract text available
Text: User's Guide SNVA434A – February 2011 – Revised April 2013 AN-2050 LM5006 Evaluation Board 1 Introduction The LM5006EVAL evaluation board provides the design engineer with a fully functional buck regulator, employing the constant on-time COT operating principle. This evaluation board provides a 5V output
|
Original
|
SNVA434A
AN-2050
LM5006
LM5006EVAL
|
PDF
|