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    SI3460 Price and Stock

    Vishay Siliconix SI3460DDV-T1-BE3

    N-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI3460DDV-T1-BE3 Digi-Reel 5,154 1
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    SI3460DDV-T1-BE3 Reel 3,000 3,000
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    Vishay Siliconix SI3460BDV-T1-BE3

    N-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI3460BDV-T1-BE3 Cut Tape 5,096 1
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    SI3460BDV-T1-BE3 Digi-Reel 5,096 1
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    Vishay Siliconix SI3460DDV-T1-GE3

    MOSFET N-CH 20V 7.9A 6TSOP
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    DigiKey SI3460DDV-T1-GE3 Digi-Reel 3,234 1
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    SI3460DDV-T1-GE3 Cut Tape 3,234 1
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    SI3460DDV-T1-GE3 Reel 3,000 3,000
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    RS SI3460DDV-T1-GE3 Bulk 3,000
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    New Advantage Corporation SI3460DDV-T1-GE3 6,000 1
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    Vishay Siliconix SI3460BDV-T1-E3

    MOSFET N-CH 20V 8A 6TSOP
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    DigiKey SI3460BDV-T1-E3 Digi-Reel 2,744 1
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    SI3460BDV-T1-E3 Cut Tape 2,744 1
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    RS SI3460BDV-T1-E3 Bulk 3,000
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    ES Components SI3460BDV-T1-E3
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    Skyworks Solutions Inc SI3460-EVB

    EVAL BOARD FOR SI3460
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    SI3460 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3460 Silicon Laboratories IEEE 802.3af PSE INTERFACE AND DC-DC CONTROLLER Original PDF
    SI3460BDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 6-TSOP Original PDF
    SI3460BDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 6-TSOP Original PDF
    SI3460DDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 7.9A 6-TSOP Original PDF
    Si3460DV Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    SI3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET Original PDF
    Si3460DV SPICE Device Model Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    SI3460DV-T1 Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    Si3460DV-T1 Vishay Siliconix N-Channel 20-V (D-S) MOSFET Original PDF
    SI3460DV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 5.1A 6TSOP Original PDF
    SI3460DV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 5.1A 6TSOP Original PDF
    SI3460-E02-GM Silicon Laboratories PMIC - Power Over Ethernet (PoE) Controllers, Integrated Circuits (ICs), IC POWER MANAGEMENT CTLR 11VQFN Original PDF
    SI3460-E02-GMR Silicon Laboratories PMIC - Power Over Ethernet (PoE) Controllers, Integrated Circuits (ICs), IC POWER MANAGEMENT CTLR 11VQFN Original PDF
    SI3460-E03-GM Silicon Laboratories PMIC - Power Over Ethernet (PoE) Controllers, Integrated Circuits (ICs), IC POWER MANAGEMENT CTLR 11VQFN Original PDF
    SI3460-E03-GMR Silicon Laboratories PMIC - Power Over Ethernet (PoE) Controllers, Integrated Circuits (ICs), IC POWER MANAGEMENT CTLR 11VQFN Original PDF
    SI3460-EVB Silicon Laboratories IEEE 802.3af PSE INTERFACE AND DC-DC CONTROLLER Original PDF
    SI3460-EVB Silicon Laboratories Evaluation Boards - DC/DC & AC/DC (Off-Line) SMPS, Programmers, Development Systems, BOARD EVAL POE FOR SI3460 Original PDF
    SI3460-XYY-GM Silicon Laboratories IEEE 802.3af PSE INTERFACE AND DC-DC CONTROLLER Original PDF

    SI3460 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3460DDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si3460DDV AN609, 31-May-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si 3 4 6 0 - EVB Si3460 E VALUATION B OARD U SER ’ S G U I D E 1. Introduction This document is intended to be used in conjunction with the Si3460 data sheet for designers interested in: An Pl No ea t se Re C com on si me de n r S de i3 d f 46 or 2 N


    Original     		Si3460 Si3460-EVB PDF

    Si3460BDV

    Abstract: 74388
    Text: SPICE Device Model Si3460BDV Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si3460BDV S-70623Rev. 09-Apr-07 74388 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 11-Mar-11 PDF

    AN609

    Abstract: Si3460DV
    Text: Si3460DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si3460DV AN609 01-Mar-06 PDF

    Si3460BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3460BDV Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si3460BDV 18-Jul-08 PDF

    Si3460DV

    Abstract: No abstract text available
    Text: Si3460DV New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.027 @ VGS = 4.5 V 6.8 0.032 @ VGS = 2.5 V 6.3 0.038 @ VGS = 1.8 V 5.7 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET


    Original     		Si3460DV S-02448--Rev. 06-Nov-00 PDF

    qfn 3x3 dc-dc

    Abstract: schematic diagram power supply Poe Iclass poe pse injector schematic diagram dc-dc Single Port Midspan Power Injector "power sourcing equipment" "power injector" "PSE controller"
    Text: Si3460 Dual Function IEEE 802.3af PSE & DC-DC Controller Description Features The Si3460 is a single-port power management controller for IEEE 802.3af compliant Power Sourcing Equipment PSE . Designed to minimize system cost and ease of implementation in embedded PSE endpoint (switches) or


    Original     		Si3460 Si3460 qfn 3x3 dc-dc schematic diagram power supply Poe Iclass poe pse injector schematic diagram dc-dc Single Port Midspan Power Injector "power sourcing equipment" "power injector" "PSE controller" PDF

    Si3460-EVB

    Abstract: qfn 3x3 dc-dc Si3460 TLV431 transistor marking code D8 SI3460-E02 "power sourcing equipment" "power injector"
    Text: Si3460 IEEE 802.3af PSE INTERFACE AND DC-DC CONTROLLER Features 11 Si3460 GATE 1 10 CTRL1 2 9 ISENSE VDD 3 8 RST CTRL2 4 7 VSENSE 250KHZ 5 6 DETA GND STATUS 11 3-point detection algorithm eliminates false detection events IEEE-compliant classification


    Original     		Si3460 250KHZ 11-Pin Si3460-EVB qfn 3x3 dc-dc Si3460 TLV431 transistor marking code D8 SI3460-E02 "power sourcing equipment" "power injector" PDF

    pwm lm2904

    Abstract: Venkel CR0603 10W TLV431 sot23 CR1210 LM319 data CR0805-10W-1004F C0603X7R101-471K 603 to252 95001-2881 CR0603
    Text: Si 3 4 6 0 - EVB Si3460 E VALUATION B OARD U SER ’ S G U I D E 1. Introduction This document is intended to be used in conjunction with the Si3460 data sheet for designers interested in:  An introduction to Power-over-Ethernet PoE and Power Sourcing Equipment (PSE) design considerations


    Original     		Si3460 Si3460-EVB pwm lm2904 Venkel CR0603 10W TLV431 sot23 CR1210 LM319 data CR0805-10W-1004F C0603X7R101-471K 603 to252 95001-2881 CR0603 PDF

    Si3460DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3460DV N-Channel 20-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		Si3460DV PDF

    74412

    Abstract: Si3460BDV Si3460BDV-T1-E3
    Text: Si3460BDV Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS RoHS COMPLIANT


    Original     		Si3460BDV Si3460BDV-T1-E3 18-Jul-08 74412 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3460DDV Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si3460DDV 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3460DDV Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.028 at VGS = 4.5 V 7.9 0.032 at VGS = 2.5 V 7.4 0.038 at VGS = 1.8 V 6.8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3460DDV 2002/95/EC Si3460DDV-T1-GE3 18-Jul-08 PDF

    installation diagram of ip camera

    Abstract: laptop circuit diagram CAT5 cable dlink Wireless Camera Circuit Diagram circuit diagram of wireless camera RJ45 D-Link laptop power adapter circuit diagram dlink rj45 laptop led cable diagram ip camera
    Text: AN336 Si3460-EVB P O E IP C A M E R A Q U I C K S TA R T G U I D E 1. Introduction This document describes how to set up and operate a Si3460-EVB to operate as a midspan injector for powering a D-Link DCS-1110 IP Camera. Images from the D-Link® camera can then be viewed on a standard web browser


    Original     		AN336 Si3460-EVB DCS-1110 Si3460-EVB--shipped installation diagram of ip camera laptop circuit diagram CAT5 cable dlink Wireless Camera Circuit Diagram circuit diagram of wireless camera RJ45 D-Link laptop power adapter circuit diagram dlink rj45 laptop led cable diagram ip camera PDF

    SI3460BDV

    Abstract: 74412
    Text: Si3460BDV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3460BDV 2002/95/EC Si3460BDV-T1-E3 Si3460BDV-T1-GE3 11-Mar-11 74412 PDF

    Si3460

    Abstract: Si3460-EVB Si3460-XYY-GM TLV431 wall wart schematic "power sourcing equipment" "power injector"
    Text: Si3460 IEEE 802.3af PSE INTERFACE AND DC-DC CONTROLLER Features Pin Assignments 11 Si3460 11 STATUS GATE 1 10 CTRL1 2 9 ISENSE VDD 3 8 RST CTRL2 4 7 VSENSE 250KHZ 5 6 DETA GND 11 Robust 3-point detection algorithm eliminates false detection events IEEE-compliant classification


    Original     		Si3460 250KHZ 11-Pin Si3460 Si3460-EVB Si3460-XYY-GM TLV431 wall wart schematic "power sourcing equipment" "power injector" PDF

    DIODE UF marking code

    Abstract: QFN11 Si3460 Si3460-EVB Si3460-XYY-GM TLV431 "power sourcing equipment" "power injector"
    Text: Si3460 IEEE 802.3af PSE INTERFACE AND DC-DC CONTROLLER Features Pin Assignments 11 Si3460 11 STATUS GATE 1 10 CTRL1 2 9 ISENSE VDD 3 8 RST CTRL2 4 7 VSENSE 250KHZ 5 6 DETA GND 11 Robust 3-point detection algorithm eliminates false detection events IEEE-compliant classification


    Original     		Si3460 250KHZ 11-Pin DIODE UF marking code QFN11 Si3460 Si3460-EVB Si3460-XYY-GM TLV431 "power sourcing equipment" "power injector" PDF

    Si3460DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si3460DV 18-Jul-08 PDF

    TSOP-6 .54

    Abstract: SI3460DV
    Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.027 @ VGS = 4.5 V 6.8 0.032 @ VGS = 2.5 V 6.3 0.038 @ VGS = 1.8 V 5.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D


    Original     		Si3460DV Si3460DV-T1 08-Apr-05 TSOP-6 .54 PDF

    Si3460BDV

    Abstract: SI3460BDV-T1-GE3
    Text: Specification Comparison Vishay Siliconix Si3460DDV vs. Si3460BDV Description: Package: Pin Out: N-Channel, 20 V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3460DDV-T1-GE3 replaces Si3460BDV-T1-GE3 Si3460DDV-T1-GE3 replaces Si3460BDV-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		Si3460DDV Si3460BDV Si3460DDV-T1-GE3 Si3460BDV-T1-GE3 09-Apr-10 PDF

    Si3460DV-T1-E3

    Abstract: Si3460BDV Si3460DV Si3460DV-T1 SI3460BDV-T1-E3
    Text: Specification Comparison Vishay Siliconix Si3460BDV vs. Si3460DV Description: N-Channel, 20 V D-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3460BDV-T1-E3 Replaces Si3460DV-T1-E3 Si3460BDV-T1-E3 Replaces Si3460DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		Si3460BDV Si3460DV Si3460BDV-T1-E3 Si3460DV-T1-E3 Si3460DV-T1 07-Dec-06 PDF