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    SI42 Price and Stock

    Vishay Siliconix SI4214DDY-T1-GE3

    MOSFET 2N-CH 30V 8.5A 8SOIC
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    DigiKey SI4214DDY-T1-GE3 Digi-Reel 15,791 1
    • 1 $0.82
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    SI4214DDY-T1-GE3 Cut Tape 15,791 1
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    SI4214DDY-T1-GE3 Reel 15,000 2,500
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    RS SI4214DDY-T1-GE3 Bulk 2,500
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    New Advantage Corporation SI4214DDY-T1-GE3 25,000 1
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    Vishay Siliconix SI4228DY-T1-GE3

    MOSFET 2N-CH 25V 8A 8SOIC
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    DigiKey SI4228DY-T1-GE3 Cut Tape 8,621 1
    • 1 $1.08
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    SI4228DY-T1-GE3 Digi-Reel 8,621 1
    • 1 $1.08
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    SI4228DY-T1-GE3 Reel 5,000 2,500
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    Vishay Siliconix SI4288DY-T1-GE3

    MOSFET 2N-CH 40V 9.2A 8SOIC
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    DigiKey SI4288DY-T1-GE3 Cut Tape 7,239 1
    • 1 $1.55
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    SI4288DY-T1-GE3 Digi-Reel 7,239 1
    • 1 $1.55
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    SI4288DY-T1-GE3 Reel 2,500 2,500
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    RS SI4288DY-T1-GE3 Bulk 2,500
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    Quest Components SI4288DY-T1-GE3 40
    • 1 $1.715
    • 10 $1.372
    • 100 $0.8575
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    ES Components SI4288DY-T1-GE3
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    New Advantage Corporation SI4288DY-T1-GE3 5,000 1
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    Vishay Siliconix SI4202DY-T1-GE3

    MOSFET 2N-CH 30V 12.1A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4202DY-T1-GE3 Digi-Reel 3,336 1
    • 1 $1.55
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    • 1000 $0.55318
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    SI4202DY-T1-GE3 Cut Tape 3,336 1
    • 1 $1.55
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    • 1000 $0.55318
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    SI4202DY-T1-GE3 Reel 2,500 2,500
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    New Advantage Corporation SI4202DY-T1-GE3 5,000 1
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    Vishay Siliconix SI4214DDY-T1-E3

    MOSFET 2N-CH 30V 8.5A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4214DDY-T1-E3 Digi-Reel 1,122 1
    • 1 $1.06
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    • 1000 $0.36267
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    SI4214DDY-T1-E3 Cut Tape 1,122 1
    • 1 $1.06
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    Find more SI42 price and stock on Findchips.com

    SI42 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4200 Silicon Laboratories Transceiver Original PDF
    SI-42002 Bel Fuse SI-42002 Scan PDF
    SI-42003 Bel Fuse SI-42003 Scan PDF
    SI4200-BM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX TRI-BAND 32MLP Original PDF
    Si4200-BM Silicon Laboratories Aero GSM Transceiver Chipset Original PDF
    Si4200-DS Silicon Laboratories Aero GSM Transceiver Chipset Original PDF
    SI4200DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 25V 8A 8SOIC Original PDF
    SI4200-EVB Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVAL FOR SI4200 Original PDF
    Si4200GD-BM Silicon Laboratories Aero GSM Transceiver Chipset Original PDF
    SI4200-GM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX TRI-BAND 32MLP Original PDF
    Si4200GP-BM Silicon Laboratories Aero GSM Transceiver Chipset Original PDF
    Si4201 Silicon Laboratories Universal Baseband Interface Original PDF
    SI4201-BM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC UNVRSL BASEBAND INTRFC 20QFN Original PDF
    Si4201-BM Silicon Laboratories RF Transceiver, 3.3V Supply Voltage, MLP Original PDF
    Si4201GD-BM Silicon Laboratories RF Transceiver, 3.3V Supply Voltage, MLP Original PDF
    SI4201-GM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC UNVRSL BASEBAND INTRFC 20QFN Original PDF
    SI4202DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 12.1A 8SO Original PDF
    SI4204DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 19.8A 8-SOIC Original PDF
    SI4205-BM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX TRI-BAND 32LGA Original PDF
    Si4205-BM Silicon Laboratories Original PDF

    SI42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4202DY AN609, 2175m 2923m 2439m 3089u 1542m 7069m 8017m

    Si4200-BM

    Abstract: Si4200 SEN 1327 Si4133T-bm DCS 1800 RX SAW Filter Si4133T Si4201 SAFEK881MFL0T00R00 Si4201-BM transceiver gsm
    Text: Aero A E R O T R A N S C E I V E R F O R GSM A N D G PR S WIRELESS COMMUNICATIONS Features Quad-band support: GSM 850 Class 4, small MS E-GSM 900 Class 4, small MS DCS 1800 Class 1 PCS 1900 Class 1 Si4200: 5 x 5 mm QFN32 Si4201: 4 x 4 mm QFN20 Si4133T: 5 x 5 mm QFN28


    Original     		PDF Si4200: QFN32 Si4201ential Si4200-BM Si4200 SEN 1327 Si4133T-bm DCS 1800 RX SAW Filter Si4133T Si4201 SAFEK881MFL0T00R00 Si4201-BM transceiver gsm

    67125

    Abstract: No abstract text available
    Text: SPICE Device Model Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4200DY 18-Jul-08 67125

    si4286

    Abstract: No abstract text available
    Text: Si4286DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0325 at VGS = 10 V 7 0.040 at VGS = 4.5 V 6.3 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF Si4286DY 2002/95/EC Si4286DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4286

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4276DY AN609, 19-May-10

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4204DY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4204DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF Si4200DY 2002/95/EC Si4200DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4230DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0205 at VGS = 10 V 8 0.026 at VGS = 4.5 V 8 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 7.3 APPLICATIONS


    Original     		PDF Si4230DY Si4230DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 8.5 0.028 at VGS = 4.5 V 7.8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4214DY 2002/95/EC Si4214DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4276DY 2002/95/EC Si4276DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4228DY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4228DY-T1-E3 2002/95/EC 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4226DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0195 at VGS = 4.5 V 8 0.026 at VGS = 2.5 V 8 VDS (V) 25 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 11 RoHS APPLICATIONS COMPLIANT


    Original     		PDF Si4226DY Si4226DY-T1-E3 18-Jul-08

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4276DY 2002/95/EC Si4276DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.014 at VGS = 10 V 12.1 0.017 at VGS = 4.5 V 11 Qg (Typ.) 5.4 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4202DY 2002/95/EC Si4202DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4276DY 2002/95/EC Si4276DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4


    Original     		PDF Si4276DY-T1-E3 2002/95/EC 150hay 11-Mar-11 SI4276DY

    S10-28

    Abstract: Si4288DY
    Text: SPICE Device Model Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4288DY 18-Jul-08 S10-28

    Untitled

    Abstract: No abstract text available
    Text: Si4286DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0325 at VGS = 10 V 7 0.040 at VGS = 4.5 V 6.3 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF Si4286DY 2002/95/EC Si4286DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4


    Original     		PDF Si4276DY-T1-E3 2002/95/EC 25electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4214DY

    Abstract: 785 spice
    Text: SPICE Device Model Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si4214DY 18-Jul-08 785 spice

    Si4228DY

    Abstract: si4228
    Text: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4228DY 2002/95/EC Si4228DY-T1-GE3 18-Jul-08 si4228

    Si4214DDY

    Abstract: SI4214DD si4214
    Text: New Product Si4214DDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4214DDY 2002/95/EC Si4214DDY-T1-GE3 18-Jul-08 SI4214DD si4214

    SI4210

    Abstract: Si4210DY
    Text: New Product Si4210DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0355 at VGS = 10 V 6.5 0.044 at VGS = 4.5 V 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4210DY 2002/95/EC Si4210DY-T1-GE3 18-Jul-08 SI4210