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    SI4356 Search Results

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    SI4356 Price and Stock

    Silicon Laboratories Inc SI4356-B1A-FMR

    RF RX FSK/GFSK 315-917MHZ 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4356-B1A-FMR Reel 7,500 2,500
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $1.975
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    SI4356-B1A-FMR Cut Tape 2,390 1
    • 1 $3.14
    • 10 $2.804
    • 100 $2.2997
    • 1000 $1.975
    • 10000 $1.975
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    SI4356-B1A-FMR Digi-Reel 1
    • 1 $3.14
    • 10 $2.804
    • 100 $2.2997
    • 1000 $1.975
    • 10000 $1.975
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    Mouser Electronics SI4356-B1A-FMR 9,968
    • 1 $3.14
    • 10 $2.53
    • 100 $2.3
    • 1000 $1.98
    • 10000 $1.97
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    Symmetry Electronics SI4356-B1A-FMR 1
    • 1 $2.1
    • 10 $2.1
    • 100 $2.1
    • 1000 $2.1
    • 10000 $2.1
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    Silicon Laboratories Inc SI4356-B1A-FM

    RF RX FSK/GFSK 315-917MHZ 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4356-B1A-FM Tray 710 1
    • 1 $3.36
    • 10 $2.565
    • 100 $2.07675
    • 1000 $1.975
    • 10000 $1.975
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    Mouser Electronics SI4356-B1A-FM 4,861
    • 1 $2.51
    • 10 $2.28
    • 100 $2.08
    • 1000 $1.98
    • 10000 $1.97
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    Newark SI4356-B1A-FM Bulk 1
    • 1 $2.61
    • 10 $2.39
    • 100 $2.16
    • 1000 $2.06
    • 10000 $2.06
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    Symmetry Electronics SI4356-B1A-FM 1
    • 1 $2.1
    • 10 $2.1
    • 100 $2.1
    • 1000 $2.1
    • 10000 $2.1
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    Vishay Intertechnologies SI4356ADY-T1-E3

    MOSFETs 30V 26A 6.5W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI4356ADY-T1-E3
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    Vishay Intertechnologies SI4356ADY-T1-GE3

    MOSFETs 30V 26A 6.5W 5.5mohm @ 10V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI4356ADY-T1-GE3
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    SI4356 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI43-560 Xinwang Electronics SMT Power Inductor Original PDF
    SI4356ADY Vaishali Semiconductor N-Channel 30-V (D-S) MOSFET Original PDF
    SI4356-B1A-FM Silicon Laboratories RF Receivers, RF/IF and RFID, IC RX SUB-GHZ STAND ALONE QFN Original PDF
    SI4356-B1A-FMR Silicon Laboratories RF Receivers, RF/IF and RFID, IC RCVR EZRADIO STANDALONE 20QFN Original PDF
    Si4356DY Vishay Intertechnology N-Channel 30-V MOSFET Original PDF
    SI4356DY Vishay Siliconix MOSFETs Original PDF
    SI4356DY Vishay Siliconix N-Channel 30-V MOSFET Original PDF
    Si4356DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

    SI4356 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4356ADY

    Abstract: TB-17 Si4356ADY-T1-E3
    Text: Si4356ADY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 26 0.0068 at VGS = 4.5 V 23 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 30 nC APPLICATIONS


    Original     		PDF Si4356ADY Si4356ADY-T1-E3 S-61089-Rev. 19-Jun-06 TB-17

    Si4356DY

    Abstract: No abstract text available
    Text: Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation D 100 % RG Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 17 0.0075 @ VGS = 4.5 V


    Original     		PDF Si4356DY 08-Apr-05

    Si4356DY

    Abstract: No abstract text available
    Text: \\\ SPICE Device Model Si4356DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4356DY 0-to-10V 27-Jun-02

    74120

    Abstract: Si4356ADY
    Text: SPICE Device Model Si4356ADY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4356ADY S-51945Rev. 03-Oct-05 74120

    Untitled

    Abstract: No abstract text available
    Text: Si4356 Si4356 S TA NDALONE S UB -GH Z R ECEIVER Features      Pin configurable Frequency range = 315–917 MHz Supply Voltage = 1.8–3.6 V Receive sensitivity = Up to –113 dBm Modulation  G FSK        OOK


    Original     		PDF Si4356 Si4356 20-pin

    Si4356DY

    Abstract: No abstract text available
    Text: Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 17 0.0075 @ VGS = 4.5 V 14 APPLICATIONS


    Original     		PDF Si4356DY S-20949--Rev. 01-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: Si4356ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY 30 FEATURES rDS(on) (W) ID (A)a 0.0055 @ VGS = 10 V 26 0.0068 @ VGS = 4.5 V 23 VDS (V) D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 30 nC RoHS COMPLIANT APPLICATIONS


    Original     		PDF Si4356ADY Si4356ADY-T1--E3 15-Aug-05

    Si4356DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4356DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4356DY S-50836Rev. 16-May-05

    Si4356DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4356DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4356DY 18-Jul-08

    Si4356ADY

    Abstract: 74120
    Text: SPICE Device Model Si4356ADY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4356ADY 18-Jul-08 74120

    5914

    Abstract: 7386 AN609 Si4356ADY 62084
    Text: Si4356ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4356ADY AN609 13-Jan-06 5914 7386 62084

    Untitled

    Abstract: No abstract text available
    Text: Si4356ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY 30 FEATURES rDS(on) (W) ID (A)a 0.0055 @ VGS = 10 V 26 0.0068 @ VGS = 4.5 V 23 VDS (V) D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 30 nC RoHS COMPLIANT APPLICATIONS


    Original     		PDF Si4356ADY Si4356ADY-T1--E3 08-Apr-05

    Si4356DY

    Abstract: No abstract text available
    Text: Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation D 100 % RG Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 17 0.0075 @ VGS = 4.5 V


    Original     		PDF Si4356DY 18-Jul-08

    TB-17

    Abstract: Si4356ADY Si4356ADY-T1-E3 V17B
    Text: Si4356ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 26 0.0068 at VGS = 4.5 V 23 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4356ADY Si4356ADY-T1-E3 Si4356ADY-T1-GE3 18-Jul-08 TB-17 V17B

    Si4356DY

    Abstract: No abstract text available
    Text: Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation D 100 % RG Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 17 0.0075 @ VGS = 4.5 V


    Original     		PDF Si4356DY S-03662--Rev. 14-Apr-03

    Untitled

    Abstract: No abstract text available
    Text: Si4356ADY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 26 0.0068 at VGS = 4.5 V 23 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 30 nC APPLICATIONS


    Original     		PDF Si4356ADY Si4356ADY-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4356ADY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 26 0.0068 at VGS = 4.5 V 23 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 30 nC APPLICATIONS


    Original     		PDF Si4356ADY Si4356ADY-T1-E3 08-Apr-05

    dr1 433.92

    Abstract: dr1 433,92 DIODE smd 434 and/dr1 433.92 dr1 433.92 4 pin
    Text: Si4356RXModule-UG S i 4 3 5 6 - R X - 4 3 4 S TANDALONE R ECEIVER M O D U L E U SERS ’ G UIDE 1. Overview This document describes the basic use of the 4356-RX-434 small standalone receiver module. The schematic of the module is shown in Figure 1. Figure 1. 4356-RX-434 Standalone Receiver Module Schematic


    Original     		PDF Si4356RXModule-UG 4356-RX-434 Si4356 dr1 433.92 dr1 433,92 DIODE smd 434 and/dr1 433.92 dr1 433.92 4 pin

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    Untitled

    Abstract: No abstract text available
    Text: SMT Power Inductor SI 43 Type Features „ „ „ „ „ „ „ „ RoHS compliant. Low profile 2.5mm max.height SMD type. Unshielded. Self-leads,suitable for high density mounting. High energy storage and low DCR Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,


    Original     		PDF 098Max 100KHz SI43-1R0L SI43-1R2L SI43-1R5L SI43-1R8L SI43-2R2L 100uH.

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original     		PDF VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110