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    SI4532 Price and Stock

    onsemi SI4532DY

    MOSFET N/P-CH 30V 3.9A 8SOIC
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    DigiKey SI4532DY Reel 20,000 2,500
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    SI4532DY Cut Tape 1,998 1
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    SI4532DY Digi-Reel 1
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    Avnet Americas SI4532DY Reel 27,500 12 Weeks 2,500
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    SI4532DY Reel 0 Weeks, 2 Days 1,316
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    Mouser Electronics SI4532DY 4,218
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    Verical SI4532DY 2,500 2,500
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    SI4532DY Cut Tape 2,500
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    Onlinecomponents.com SI4532DY 2,500
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    Rochester Electronics SI4532DY 918 1
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    Richardson RFPD SI4532DY 2,500
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    Avnet Silica SI4532DY 13 Weeks 2,500
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    Chip1Stop SI4532DY 2,340
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    EBV Elektronik SI4532DY 14 Weeks 2,500
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    Master Electronics SI4532DY 2,500
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    Vishay Siliconix SI4532CDY-T1-GE3

    MOSFET N/P-CH 30V 6A/4.3A 8SOIC
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    DigiKey SI4532CDY-T1-GE3 Reel 5,000 2,500
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    SI4532CDY-T1-GE3 Cut Tape 2,200 1
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    SI4532CDY-T1-GE3 Digi-Reel 1
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    RS SI4532CDY-T1-GE3 Bulk 2,500
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    New Advantage Corporation SI4532CDY-T1-GE3 290,000 1
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    Vishay Siliconix SI4532ADY-T1-E3

    MOSFET N/P-CH 30V 3.7A/3A 8SOIC
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    SI4532ADY-T1-E3 Digi-Reel 1
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    Vishay Siliconix SI4532ADY-T1-GE3

    MOSFET N/P-CH 30V 3.7A/3A 8SOIC
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    DigiKey SI4532ADY-T1-GE3 Digi-Reel 1
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    Vishay Intertechnologies SI4532CDY-T1-GE3

    N- AND P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4532CDY-T1-GE3)
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    Avnet Americas SI4532CDY-T1-GE3 Reel 5,000 2,500
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    Mouser Electronics SI4532CDY-T1-GE3 76,423
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    Verical SI4532CDY-T1-GE3 2,500 2,500
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    Newark SI4532CDY-T1-GE3 Cut Tape 48,512 5
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    SI4532CDY-T1-GE3 Reel 20,000 2,500
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    SI4532CDY-T1-GE3 Reel 2,500
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    TTI SI4532CDY-T1-GE3 Reel 12,500 2,500
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    TME SI4532CDY-T1-GE3 2,410 1
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    NAC SI4532CDY-T1-GE3 5,000 1
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    EBV Elektronik SI4532CDY-T1-GE3 18 Weeks 2,500
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    Find more SI4532 price and stock on Findchips.com

    SI4532 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si4532ADY Microsemi EVALUATION KIT Original PDF
    SI4532ADY Vishay IC, SI9942DY N/P CHNMOSFET SMD00 Original PDF
    SI4532ADY Vishay N- and P-Channel 30-V (D-S) MOSFET Original PDF
    Si4532ADY Vishay Intertechnology N- and P-Channel 30-V (D-S) MOSFET Original PDF
    SI4532ADY Vishay Siliconix IC, SI9942DY N/P CHNMOSFET SMD00 Original PDF
    Si4532ADY SPICE Device Model Vishay N- and P-Channel 30-V (D-S) MOSFET Original PDF
    Si4532ADY SPICE Device Model Vishay N- and P-Channel 30-V (D-S) MOSFET Original PDF
    SI4532ADY-T1 Vishay Intertechnology N- and P-Channel 30-V (D-S) MOSFET Original PDF
    SI4532ADY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 3.7A 8-SOIC Original PDF
    SI4532ADY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 3.7A 8-SOIC Original PDF
    SI4532CDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 6A 8-SOIC Original PDF
    Si4532DY Fairchild Semiconductor Dual N- and P-Channel Enhancement Mode Field Effect Transistor Original PDF
    SI4532DY Fairchild Semiconductor Dual N- and P-Channel Enhancement Mode Field Effec Original PDF
    Si4532DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4532DY Vishay MOSFET SI4532DY SO-8 Original PDF
    SI4532DY Vishay N-Channel and P-Channel 30-V (D-S) MOSFET Original PDF
    SI4532DY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N & P- Channel, 30/-30V, Pair, Pkg Style SO-8 Scan PDF
    SI4532DY_NL Fairchild Semiconductor Dual N & P Channel Enhancement Mode Field Effect Transistor Original PDF
    SI4532DY-T1 Vishay Intertechnology N- and P-Channel 30-V (D-S) MOSFET Original PDF

    SI4532 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4532ADY

    Abstract: Si4532ADY-T1-E3 N- and P-Channel 30-V D-S MOSFET
    Text: Si4532ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.053 at VGS = 10 V 4.9 0.075 at VGS = 4.5 V 4.1 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4532ADY Si4532ADY-T1-E3 Si4532ADY-T1-GE3 11-Mar-11 N- and P-Channel 30-V D-S MOSFET

    Si4532DY

    Abstract: No abstract text available
    Text: Si4532DY Siliconix Dual EnhancementĆMode MOSFET NĆ and PĆChannel Product Summary VDS (V) NĆChannel 30 PĆChannel -30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = -10 V "3.5 0.19 @ VGS = -4.5 V "2.5 D1 S2 SOĆ8 S1


    Original     		PDF Si4532DY S45531Rev.

    Si4532ADY-T1-E3

    Abstract: Si4532ADY
    Text: Si4532ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.053 at VGS = 10 V 4.9 0.075 at VGS = 4.5 V 4.1 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4532ADY Si4532ADY-T1-E3 Si4532ADY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4532ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.053 @ VGS = 10 V 4.9 0.075 @ VGS = 4.5 V 4.1 0.080 @ VGS = - 10 V - 3.9 0.135 @ VGS = - 4.5 V - 3.0 D1 S2 SO-8


    Original     		PDF Si4532ADY Si4532ADY-T1 70any 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 30 –30 RDS(ON) (W) D1 S2 SO-8 S1 1 8 D1


    Original     		PDF Si4532DY 08-Apr-05

    Si4532DY

    Abstract: No abstract text available
    Text: Si4532DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 D1 S2 SO-8 S1 1 8 D1 G1


    Original     		PDF Si4532DY S-47958--Rev. 15-Apr-96

    si4532cdy

    Abstract: 3680 MOSFET 9958 3104 303 mosfet 4414 AN609 122516 328-529 SI4532C
    Text: Si4532CDY Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4532CDY AN609, CONFIGURA899 10-Nov-09 3680 MOSFET 9958 3104 303 mosfet 4414 AN609 122516 328-529 SI4532C

    si4532cdy

    Abstract: No abstract text available
    Text: SPICE Device Model Si4532CDY Vishay Siliconix N-Channel and P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over


    Original     		PDF Si4532CDY 18-Jul-08

    SI4532DY

    Abstract: F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF Si4532DY -30Voduct F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    Untitled

    Abstract: No abstract text available
    Text: Si4532CDY Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.047 at VGS = 10 V 6.0 0.065 at VGS = 4.5 V 5.2 VDS (V) N-Channel 30 P-Channel - 30 0.089 at VGS = - 10 V - 4.3 0.140 at VGS = - 4.5 V - 3.4 Qg (Typ.)


    Original     		PDF Si4532CDY 2002/95/EC Si4532CDY-T1-Gelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si4532cdy-t1-ge3

    Abstract: No abstract text available
    Text: Si4532CDY Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.047 at VGS = 10 V 6.0 0.065 at VGS = 4.5 V 5.2 VDS (V) N-Channel 30 P-Channel - 30 0.089 at VGS = - 10 V - 4.3 0.140 at VGS = - 4.5 V - 3.4 Qg (Typ.)


    Original     		PDF Si4532CDY 2002/95/EC Si4532CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4532CDY Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.047 at VGS = 10 V 6.0 0.065 at VGS = 4.5 V 5.2 VDS (V) N-Channel 30 P-Channel - 30 0.089 at VGS = - 10 V - 4.3 0.140 at VGS = - 4.5 V - 3.4 Qg (Typ.)


    Original     		PDF Si4532CDY 2002/95/EC Si4532CDY-T1emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    D665

    Abstract: SI4532DY w992
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		PDF Si4532DY D665 w992

    Si4532DY

    Abstract: No abstract text available
    Text: Si4532DY Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 D1 S2 SO-8 S1 1 8 D1 G1 2


    Original     		PDF Si4532DY S-49520--Rev. 18-Dec-96

    Untitled

    Abstract: No abstract text available
    Text: Si4532ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.053 at VGS = 10 V 4.9 0.075 at VGS = 4.5 V 4.1 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4532ADY Si4532ADY-T1-E3 Si4532ADY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4532ADY Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4532ADY 2002/95/EC Si4532ADY-T1-E3 Si4532ADY-T1-GE3 11-Mar-11

    si4532cdy

    Abstract: 64805 list of P channel power mosfet SI4532CDY-T1-GE3
    Text: Si4532CDY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.047 at VGS = 10 V 6.0 0.065 at VGS = 4.5 V 5.2 0.089 at VGS = - 10 V - 4.3 0.140 at VGS = - 4.5 V - 3.4 VDS (V) N-Channel 30 P-Channel - 30 Qg (Typ.)


    Original     		PDF Si4532CDY Si4532CDY-T1-GE3 18-Jul-08 64805 list of P channel power mosfet

    Untitled

    Abstract: No abstract text available
    Text: Si4532ADY New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.053 @ VGS = 10 V 4.9 0.075 @ VGS = 4.5 V 4.1 0.080 @ VGS = –10 V –3.9 0.135 @ VGS = –4.5 V –3.0 D1 S2


    Original     		PDF Si4532ADY S-00148. 07-Feb-00

    SI9952DY

    Abstract: SI9952 Si4532DY Si4539DY Si6542DQ Si6543DQ Si9939DY
    Text: Si9952DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 25 P-Channel –25 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.15 @ VGS = 4.5 V "2.0 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY


    Original     		PDF Si9952DY Si4532DY Si4539DY Si9939DY Si6542DQ Si6543DQ S-47958--Rev. 15-Apr-96 SI9952

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		PDF Si4532DY

    Si4532ADY

    Abstract: Si4532ADY-T1
    Text: Si4532ADY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.053 @ VGS = 10 V 4.9 0.075 @ VGS = 4.5 V 4.1 0.080 @ VGS = - 10 V - 3.9 0.135 @ VGS = - 4.5 V - 3.0 D1 S2 SO-8


    Original     		PDF Si4532ADY Si4532ADY-T1 S-31989--Rev. 13-Oct-03

    Untitled

    Abstract: No abstract text available
    Text: Si4532ADY Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4532ADY 2002/95/EC Si4532ADY-T1-E3 Si4532ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4532DY

    Abstract: Si4539DY Si9942DY si6452
    Text: Si9942DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = –10 V "2.5 0.350 @ VGS = –4.5 V "2.0 Recommended upgrade: Si4532DY or Si4539DY


    Original     		PDF Si9942DY Si4532DY Si4539DY Si6452DQ S-51408--Rev. 20-Jan-97 si6452

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si4532DY S e m ic onduc tors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V D S (V ) N -C h a n n e ) P -C h a n n e ) r DS(on) (£2) I d (A ) 0 .0 6 5 @ V G S = 10 V ± 3 .9 0 .0 9 5 @ V GS = 4 .5 V ± 3 .1 0 .0 8 5 @ V Gs = - 1 0 V


    OCR Scan     		PDF Si4532DY 002072b S-49520â I8-Dec-96