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    SI4842 Price and Stock

    Vishay Siliconix SI4842BDY-T1-E3

    MOSFET N-CH 30V 28A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4842BDY-T1-E3 Cut Tape 2,268 1
    • 1 $2.38
    • 10 $1.98
    • 100 $1.5756
    • 1000 $1.1312
    • 10000 $1.1312
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    SI4842BDY-T1-E3 Reel 2,500
    • 1 -
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    • 1000 -
    • 10000 $1.03424
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    SI4842BDY-T1-E3 Digi-Reel 1
    • 1 $2.38
    • 10 $1.98
    • 100 $1.5756
    • 1000 $1.1312
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    RS SI4842BDY-T1-E3 Bulk 2,500
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    • 10000 $1.85
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    New Advantage Corporation SI4842BDY-T1-E3 15,000 1
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    • 10000 $0.6214
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    Vishay Siliconix SI4842BDY-T1-GE3

    MOSFET N-CH 30V 28A 8SO
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    DigiKey SI4842BDY-T1-GE3 Cut Tape 1,535 1
    • 1 $2.35
    • 10 $1.954
    • 100 $1.5553
    • 1000 $1.11664
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    SI4842BDY-T1-GE3 Reel 2,500
    • 1 -
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    • 10000 $0.98712
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    SI4842BDY-T1-GE3 Digi-Reel 1
    • 1 $2.35
    • 10 $1.954
    • 100 $1.5553
    • 1000 $1.11664
    • 10000 $1.11664
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    Vishay Intertechnologies SI4842BDY-T1-GE3

    Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4842BDY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4842BDY-T1-GE3 Reel 17 Weeks 2,500
    • 1 -
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    • 10000 $0.9894
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    Mouser Electronics SI4842BDY-T1-GE3 3,664
    • 1 $2.35
    • 10 $1.96
    • 100 $1.56
    • 1000 $1.12
    • 10000 $0.987
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    Newark SI4842BDY-T1-GE3 Cut Tape 2,500
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    • 1000 $1.54
    • 10000 $1.54
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    TTI SI4842BDY-T1-GE3 Reel 2,500
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    • 10000 $1
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    Vishay Intertechnologies SI4842BDY-T1-E3

    Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4842BDY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4842BDY-T1-E3 Reel 17 Weeks 2,500
    • 1 -
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    • 10000 $0.50941
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    Mouser Electronics SI4842BDY-T1-E3 2,523
    • 1 $2.38
    • 10 $1.98
    • 100 $1.58
    • 1000 $1.15
    • 10000 $1.15
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    Newark SI4842BDY-T1-E3 Cut Tape 2,500
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    • 1000 $1.49
    • 10000 $1.49
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    SI4842BDY-T1-E3 Reel 2,500
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    • 10000 $1.03
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    Bristol Electronics SI4842BDY-T1-E3 25,000
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    SI4842BDY-T1-E3 2,866
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    Quest Components SI4842BDY-T1-E3 20,000
    • 1 $2.85
    • 10 $2.85
    • 100 $2.85
    • 1000 $1.0688
    • 10000 $1.0688
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    TTI SI4842BDY-T1-E3 Reel 17,500 2,500
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    • 10000 $0.97
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    EBV Elektronik SI4842BDY-T1-E3 18 Weeks 2,500
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    Vishay Intertechnologies SI4842BDY-T1-E3.

    Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V; Power Dissipation:6.25W; No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI4842BDY-T1-E3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI4842BDY-T1-E3. Reel 2,500
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    Find more SI4842 price and stock on Findchips.com

    SI4842 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4842BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 28A 8-SOIC Original PDF
    SI4842BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 28A 8-SOIC Original PDF
    SI4842DY Vishay IC FPS7760A NCHANNEL SO8 MOSFET Original PDF
    Si4842DY Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI4842DY Vishay Siliconix MOSFETs Original PDF
    SI4842DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si4842DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI4842DY-T1 Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF

    SI4842 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4842DY

    Abstract: S-02445
    Text: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4842DY S-02445--Rev. 06-Nov-00 S-02445

    Si4842BDY

    Abstract: Si4842DY Si4842DY-T1-E3 Si4842BDY-T1-E3 Si4842DY-T1
    Text: Specification Comparison Vishay Siliconix Si4842BDY vs. Si4842DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4842BDY-T1-E3 Replaces Si4842DY-T1-E3 Si4842BDY-T1-E3 Replaces Si4842DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4842BDY Si4842DY Si4842BDY-T1-E3 Si4842DY-T1-E3 Si4842DY-T1 06-Nov-06

    Si4842BDY

    Abstract: Si4842BDY-T1-E3
    Text: Si4842BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8


    Original     		PDF Si4842BDY Si4842BDY-T1-E3 08-Apr-05

    Si4842DY

    Abstract: Si4842DY-T1 Si4842DY-T1-E3
    Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY


    Original     		PDF Si4842DY Si4842DY-T1 Si4842DY--E3 Si4842DY-T1-E3 18-Jul-08

    Si4842DY

    Abstract: No abstract text available
    Text: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4842DY S-03662--Rev. 14-Apr-03

    Untitled

    Abstract: No abstract text available
    Text: Si4842BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8


    Original     		PDF Si4842BDY Si4842BDY-T1-E3 18-Jul-08

    Si4842BDY

    Abstract: Si4842BDY-T1-E3 Si4842BDY-T1-GE3
    Text: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4842BDY Si4842BDY-T1-E3 Si4842BDY-T1-GE3 11-Mar-11

    Si4842DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4842DY N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si4842DY sub-circu10

    Untitled

    Abstract: No abstract text available
    Text: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4842BDY Si4842BDY-T1-E3 Si4842BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4842BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0042 @ VGS = 10 V 28 0.0057 @ VGS = 4.5 V 24 VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8 D S 1 8


    Original     		PDF Si4842BDY Si4842BDY-T1--E3 08-Apr-05

    SI4842BDY-T1-E3

    Abstract: Si4842BDY Si4842BDY-T1-GE3
    Text: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4842BDY Si4842BDY-T1-E3 Si4842BDY-T1-GE3 18-Jul-08

    S-41576-Rev

    Abstract: Si4842DY Si4842DY-T1 Si4842DY-T1-E3
    Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY


    Original     		PDF Si4842DY Si4842DY-T1 Si4842DY--E3 Si4842DY-T1-E3 08-Apr-05 S-41576-Rev

    Si4842DY

    Abstract: NC1036 71482
    Text: \\\ SPICE Device Model Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4842DY 0-to-10V 19-Feb-02 NC1036 71482

    2sc9018

    Abstract: SL4X30MW100T AN602 2sc9018 transistor
    Text: AN602 Si4822/26/27/40/44 天 线 原 理 图 、 布 局 和 设 计 指 南 1. 引言 本文档提供了常规 Si4822/26/27/40/44 设计和 AM/FM/SW 天线选型指南，包括原理图、 BOM 和 PCB 布局。所有 用户均应遵守 “2. Si4822/26/27/40/44 默认波段的定义及选择 ” 和 “3. Si48422/26/27/40/44 SSOP/SOIC 原理图


    Original     		PDF AN602 Si4822/26/27/40/44 Si48422/26/27/40/44 Si4826 Si4827 2sc9018 SL4X30MW100T AN602 2sc9018 transistor

    Untitled

    Abstract: No abstract text available
    Text: Si4842BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0042 @ VGS = 10 V 28 0.0057 @ VGS = 4.5 V 24 VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8 D S 1 8


    Original     		PDF Si4842BDY Si4842BDY-T1 03-Oct-05

    Untitled

    Abstract: No abstract text available
    Text: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4842BDY Si4842BDY-T1-E3 Si4842BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4842DY-T1-E3

    Abstract: Si4842DY Si4842DY-T1
    Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY


    Original     		PDF Si4842DY Si4842DY-T1 Si4842DY--E3 Si4842DY-T1-E3 S-41576--Rev. 23-Aug-04

    AN609

    Abstract: Si4842DY
    Text: Si4842DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4842DY AN609 02-Mar-06

    Untitled

    Abstract: No abstract text available
    Text: Si4842BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0042 @ VGS = 10 V 28 0.0057 @ VGS = 4.5 V 24 VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8 D S 1 8


    Original     		PDF Si4842BDY Si4842BDY-T1--E3 51937--Rev. 03-Oct-05

    Si4842DY

    Abstract: Si4842DY-T1
    Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4842DY


    Original     		PDF Si4842DY Si4842DY-T1 S-31726--Rev. 18-Aug-03

    Untitled

    Abstract: No abstract text available
    Text: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4842BDY Si4842BDY-T1-E3 Si4842BDY-T1-GE3 11-Mar-11

    fr9220

    Abstract: DPA426
    Text: DPA423-426 DPA-Switch Family Highly Integrated DC-DC Converter ICs for Distributed Power Architectures Product Highlights VO Highly Integrated Solution • Eliminates 20-50 external components–saves space, cost • Integrates 200 V high frequency MOSFET, PWM control


    Original     		PDF DPA423-426 stan00 17F-3, fr9220 DPA426

    CT7343

    Abstract: m7 sod123 6111T P8208 MT718 MMSZ470 MMSZ47 pe-68386 78m13 "Power over LAN"
    Text: SC4810B/E High Performance Current Mode PWM Controller with Complementary Output, Programmable Delay POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4810B/E is a 16 pin BICMOS primary side PWM controller for use in Isolated DC-DC and off-line switching


    Original     		PDF SC4810B/E SC4810B/E MLPQ-16, CT7343 m7 sod123 6111T P8208 MT718 MMSZ470 MMSZ47 pe-68386 78m13 "Power over LAN"

    R0805

    Abstract: mosfet 4456 sot23-123
    Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and


    Original     		PDF SC4910A/B MO-153, TSSOP-20 R0805 mosfet 4456 sot23-123