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    SI4848 Price and Stock

    Vishay Siliconix SI4848DY-T1-E3

    MOSFET N-CH 150V 2.7A 8SO
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    DigiKey SI4848DY-T1-E3 Digi-Reel 12,562 1
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    SI4848DY-T1-E3 Cut Tape 12,562 1
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    SI4848DY-T1-E3 Reel 10,000 2,500
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    RS SI4848DY-T1-E3 Bulk 2,500
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    Bristol Electronics SI4848DY-T1-E3 14
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    ES Components SI4848DY-T1-E3
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    New Advantage Corporation SI4848DY-T1-E3 17,500 1
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    Vishay Siliconix SI4848BDY-T1-GE3

    N-CHANNEL 150-V (D-S) MOSFET SO-
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    DigiKey SI4848BDY-T1-GE3 Digi-Reel 9,838 1
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    SI4848BDY-T1-GE3 Cut Tape 9,838 1
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    SI4848BDY-T1-GE3 Reel 7,500 2,500
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    New Advantage Corporation SI4848BDY-T1-GE3 5,000 1
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    Vishay Siliconix SI4848DY-T1-GE3

    MOSFET N-CH 150V 2.7A 8SO
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    DigiKey SI4848DY-T1-GE3 Cut Tape 6,942 1
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    SI4848DY-T1-GE3 Digi-Reel 6,942 1
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    SI4848DY-T1-GE3 Reel 5,000 2,500
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    Vishay Siliconix SI4848ADY-T1-GE3

    MOSFET N-CH 150V 5.5A 8SOIC
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    DigiKey SI4848ADY-T1-GE3 Digi-Reel 4,277 1
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    SI4848ADY-T1-GE3 Cut Tape 4,277 1
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    SI4848ADY-T1-GE3 Reel 2,500 2,500
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    Vishay Intertechnologies SI4848DY-T1-E3

    Power MOSFET, N Channel, 150 V, 2.7 A, 85 MilliOhms, NSOIC, 8 Pins, Surface Mount - Tape and Reel (Alt: SI4848DY-T1-E3)
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    Avnet Americas SI4848DY-T1-E3 Reel 2,500 13 Weeks 2,500
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    SI4848DY-T1-E3 Ammo Pack 17 Weeks, 1 Days 1
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    Mouser Electronics SI4848DY-T1-E3 42,849
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    Newark SI4848DY-T1-E3 Cut Tape 2,795 1
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    SI4848DY-T1-E3 Reel 2,500
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    Bristol Electronics SI4848DY-T1-E3 4,724
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    SI4848DY-T1-E3 4,541
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    Quest Components SI4848DY-T1-E3 3,779
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    SI4848DY-T1-E3 2,020
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    SI4848DY-T1-E3 1,600
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    SI4848DY-T1-E3 36
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    TTI SI4848DY-T1-E3 Reel 2,500
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    TME SI4848DY-T1-E3 2,393 1
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    Avnet Asia SI4848DY-T1-E3 2,500 15 Weeks 2,500
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    EBV Elektronik SI4848DY-T1-E3 14 Weeks 2,500
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    SI4848 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4848ADY-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 5.5A 8SOIC Original PDF
    SI4848DY Vishay 150V 3.7A 0.085 OHM N-MOSFET SO-8 Original PDF
    Si4848DY Vishay Intertechnology N-Channel 150-V (D-S) MOSFET Original PDF
    SI4848DY Vishay Siliconix N-Channel 150-V (D-S) MOSFET Original PDF
    Si4848DY SPICE Device Model Vishay N-Channel 150-V (D-S) MOSFET Original PDF
    SI4848DY-T1 Vishay Intertechnology N-Channel 150-V (D-S) MOSFET Original PDF
    SI4848DY-T1 Vishay Siliconix N-Channel 150-V (D-S) MOSFET Original PDF
    SI4848DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 2.7A 8-SOIC Original PDF
    SI4848DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 2.7A 8-SOIC Original PDF

    SI4848 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si4848DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4848DY N-Channel 150-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original
    Si4848DY PDF

    7107 applications

    Abstract: SILICONIX* 9953 7107 datasheet 8942 AN609 Si4848DY 74304
    Text: Si4848DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si4848DY AN609 14-May-07 7107 applications SILICONIX* 9953 7107 datasheet 8942 74304 PDF

    S-03950

    Abstract: Si4848DY Si4848DY-T1
    Text: Si4848DY Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si4848DY Si4848DY-T1 (with Tape and Reel)


    Original
    Si4848DY Si4848DY-T1 S-03950--Rev. 26-May-03 S-03950 PDF

    Si4848DY

    Abstract: No abstract text available
    Text: Si4848DY New Product Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si4848DY S-02698--Rev. 11-Dec-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4848DY www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si4848DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si4848DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4848DY Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4848DY 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4848DY Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    Si4848DY 2002/95/EC Si4848DY-T1-E3 Si4848DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si4848DY

    Abstract: Si4848DY-T1
    Text: Si4848DY Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si4848DY Si4848DY-T1 (with Tape and Reel)


    Original
    Si4848DY Si4848DY-T1 08-Apr-05 PDF

    Si4848DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4848DY Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4848DY S-60245Rev. 20-Feb-06 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4848DY Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si4848DY Si4848DY-T1 (with Tape and Reel)


    Original
    Si4848DY Si4848DY-T1 18-Jul-08 PDF

    Si4848DY

    Abstract: Si4848DY-T1
    Text: Si4848DY Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si4848DY Si4848DY-T1 (with Tape and Reel)


    Original
    Si4848DY Si4848DY-T1 PDF

    Si4848DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4848DY Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4848DY 13-Apr-01 PDF

    Si4848DY-T1-GE3

    Abstract: Si4848DY Si4848DY-T1-E3
    Text: Si4848DY Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    Si4848DY 2002/95/EC Si4848DY-T1-E3 Si4848DY-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4848DY Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    Si4848DY 2002/95/EC Si4848DY-T1-E3 Si4848DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4848DY Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    Si4848DY 2002/95/EC Si4848DY-T1-E3 Si4848DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si4848dy so-8

    Abstract: No abstract text available
    Text: Si4848DY Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    Si4848DY 2002/95/EC Si4848DY-T1-E3 Si4848DY-T1-GE3 11-Mar-11 si4848dy so-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU304C – April 2009 – Revised November 2011 TPS23754EVM-383 EVM: Evaluation Module for TPS23754 This User’s Guide describes the TPS23754 EVM TPS23754EVM-383 . TPS23754EVM-383 contains evaluation and reference circuitry for the TPS23754. The TPS23754 is an IEEE 802.3at compliant


    Original
    SLVU304C TPS23754EVM-383 TPS23754 TPS23754 TPS23754EVM-383) TPS23754. PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU318B – October 2009 – Revised August 2010 TPS23757EVM: Evaluation Module for TPS23757 This user’s guide describes the TPS23757 evaluation module TPS23757EVM . The TPS23757EVM contains evaluation and reference circuitry for the TPS23757. The TPS23757 contains a powered device


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    SLVU318B TPS23757EVM: TPS23757 TPS23757 TPS23757EVM) TPS23757EVM TPS23757. TPS23757EVM PDF

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


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    AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds PDF

    AN1358

    Abstract: 8p8c jack filter DF01S 1A 100V LM5070 12v output MODS-A-8P8C-X-C PA1269 RJ 45 8p8c RJ45 datasheet 8P8C 8P8C RJ45 CRCW0805
    Text: National Semiconductor Application Note 1358 Joseph DeNicholas January 2005 Introduction Classification Mode The LM5070 AE Area Efficient evaluation board is designed to provide an IEEE802.3af compliant, Power over Ethernet (PoE) power supply. The power supply features the


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    LM5070 IEEE802 CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. AN1358 8p8c jack filter DF01S 1A 100V LM5070 12v output MODS-A-8P8C-X-C PA1269 RJ 45 8p8c RJ45 datasheet 8P8C 8P8C RJ45 CRCW0805 PDF

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


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    Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 PDF

    DCT15EFD-U45S004

    Abstract: ceramic capacitor syfer 1u 25V 113k vishay crcw0805 ZVP3310 C2012X5R1C105K MMSD4148 CRCW0805 SOT23 N-CHANNEL FET 100V DCT15EFD
    Text: National Semiconductor LM5025 Power Applications Design Center, Americas May 2007 1.0 Design Specifications Inputs Output #1 VinMin=30V Vout1=15V VinMax=60V Iout1=1.5A 2.0 Design Description This circuit uses the LM5025 voltage mode PWM controller with complementary gate drives to implement a high-efficiency single-ended active clamp forward converter.


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    LM5025 LM5025 CSP-9-111S2) CSP-9-111S2. DCT15EFD-U45S004 ceramic capacitor syfer 1u 25V 113k vishay crcw0805 ZVP3310 C2012X5R1C105K MMSD4148 CRCW0805 SOT23 N-CHANNEL FET 100V DCT15EFD PDF

    48V to 12V buck transformer

    Abstract: No abstract text available
    Text: LX7309 Advanced Multi-topology Current-Mode Controller Preliminary Datasheet Description Features The LX7309 is a versatile current-mode DC-DC controller for isolated/non-isolated topologies. It features a low-resistance current-sensing scheme for max 200mV drop, using a differential current-sense


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    LX7309 LX7309 200mV 155mm( 48V to 12V buck transformer PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF