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Vishay Intertechnologies SI4874BDY-T1-E3 MOSFETs 30V 16A 0.007Ohm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SI4874BDY-T1-E3		3,384			1 $1.48 10 $1.04 100 $0.958 1000 $0.958 10000 $0.958	Buy Now
Quest Components	SI4874BDY-T1-E3		1,678			1 $1.7065 10 $1.7065 100 $1.7065 1000 $0.6826 10000 $0.5973	Buy Now
TTI	SI4874BDY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.477	Buy Now
Vishay Intertechnologies SI4874BDY-T1-GE3 MOSFETs 30V 16A 3.0W 7.0mohm @ 10V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SI4874BDY-T1-GE3					1 - 10 - 100 - 1000 - 10000 $0.837	Get Quote
Quest Components	SI4874BDY-T1-GE3		2,000			1 $2.672 10 $2.672 100 $2.672 1000 $1.002 10000 $1.002	Buy Now
TTI	SI4874BDY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.84	Buy Now
Vishay Intertechnologies SI4874DY-T1 15000 MA, 30 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI4874DY-T1		2,811			1 $3.84 10 $3.84 100 $3.84 1000 $1.44 10000 $1.44	Buy Now
	SI4874DY-T1		1,392			1 $13.77 10 $13.77 100 $13.77 1000 $6.885 10000 $6.885	Buy Now
	SI4874DY-T1		400			1 $3.84 10 $3.84 100 $3.84 1000 $1.584 10000 $1.584	Buy Now
Fairchild Semiconductor Corporation SI4874DY TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,15A I(D),SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI4874DY		2,000			1 $2.5 10 $2.5 100 $2.5 1000 $0.65 10000 $0.625	Buy Now
Vishay Siliconix SI4874DY-T1 15000 MA, 30 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI4874DY-T1		1,239			1 $2.4 10 $2.4 100 $2.4 1000 $1.008 10000 $1.008	Buy Now

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SI4874 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
Si4874BDY	Vishay Siliconix	Specification Comparison	Original	PDF
Si4874BDY	Vishay Telefunken	N-channel 30-v Mosfet	Original	PDF
SI4874BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 8-SOIC	Original	PDF
SI4874BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 8-SOIC	Original	PDF
SI4874DY	Fairchild Semiconductor	Single N-Channel, Logic Level, PowerTrench MOSFET	Original	PDF
SI4874DY	Unknown	N-Channel Reduced Qg , Fast Switching MOSFET	Original	PDF
SI4874DY	Vishay Intertechnology	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
Si4874DY	Vishay Telefunken	N-Channel 30-V MOSFET	Original	PDF
Si4874DY SPICE Device Model	Vishay	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
SI4874DY-T1	Vishay Intertechnology	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF

SI4874 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si4874BDY Abstract: SI4874BDY-E3 Text: Si4874BDY New Product Vishay Siliconix N-Channel 30-V MOSFET PRODUCT SUMMARY VDS V 30 FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.0085 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFETS D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View	Original	Si4874BDY Si4874BDY--E3 Si4874BDY-T1--E3 08-Apr-05 SI4874BDY-E3	PDF
SI4874BDY Abstract: Si4874BDY-T1-E3 Si4874DY Si4874DY-T1 V4140 Text: Specification Comparison Vishay Siliconix Si4874BDY vs. Si4874DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4874BDY-T1-E3 Replaces Si4874DY-T1-E3 Si4874BDY-T1-E3 Replaces Si4874DY-T1 Summary of Performance:	Original	Si4874BDY Si4874DY Si4874BDY-T1-E3 Si4874DY-T1-E3 Si4874DY-T1 V4140	PDF
Untitled Abstract: No abstract text available Text: Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested	Original	Si4874BDY Si4874BDY-T1-E3 Si4874BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested	Original	Si4874BDY Si4874BDY-T1-E3 Si4874BDY-T1-GE3 11-Mar-11	PDF
Si4874DY Abstract: No abstract text available Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS	Original	Si4874DY 18-Jul-08	PDF
Si4874DY Abstract: No abstract text available Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4874DY 18-Jul-08	PDF
Si4874BDY Abstract: No abstract text available Text: Si4874BDY New Product Vishay Siliconix N-Channel 30-V MOSFET PRODUCT SUMMARY VDS V 30 FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.0085 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFETS D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View	Original	Si4874BDY Si4874BDY--E3 Si4874BDY-T1--E3 S-41508--Rev. 09-Aug-04	PDF
Si4874BDY Abstract: Si4874BDY-T1-E3 Text: New Product Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V rDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS COMPLIANT D SO-8 S 1 8 D S 2 7 D S 3	Original	Si4874BDY Si4874BDY-T1-E3 08-Apr-05	PDF
Si4874DY Abstract: s9904 Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4874DY S99-040--Rev. 04-Oct-99 s9904	PDF
Untitled Abstract: No abstract text available Text: Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested	Original	Si4874BDY Si4874BDY-T1-E3 Si4874BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si4874DY Abstract: 71469 Text: SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4874DY 17-Apr-01 71469	PDF
40685 Abstract: A 69234 AN609 Si4874BDY Text: Si4874BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4874BDY AN609 26-Jul-07 40685 A 69234	PDF
Si4874BDY Abstract: Si4874BDY-T1-E3 Si4874DY Si4874DY-T1 Text: Specification Comparison Vishay Siliconix Si4874BDY vs. Si4874DY Description: N-Channel, 30 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4874BDY-T1-E3 Replaces Si4874DY-T1-E3 Si4874BDY-T1 Replaces Si4874DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	Si4874BDY Si4874DY Si4874BDY-T1-E3 Si4874DY-T1-E3 Si4874BDY-T1 Si4874DY-T1	PDF
Si4874DY Abstract: SOIC-16 Text: January 2001 Si4874DY Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize	Original	Si4874DY SOIC-16	PDF

Untitled Abstract: No abstract text available Text: January 2001 Si4874DY Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize	Original	Si4874DY OT-23	PDF
Untitled Abstract: No abstract text available Text: New Product Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V rDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS COMPLIANT D SO-8 S 1 8 D S 2 7 D S 3	Original	Si4874BDY Si4874BDY-T1-E3 18-Jul-08	PDF
Si4874BDY Abstract: No abstract text available Text: SPICE Device Model Si4874BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4874BDY S-60245Rev. 20-Feb-06	PDF
Untitled Abstract: No abstract text available Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4874DY S99-040--Rev. 04-Oct-99	PDF
SI4874BDY Abstract: No abstract text available Text: SPICE Device Model Si4874BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4874BDY 18-Jul-08	PDF
Si4874BDY Abstract: Si4874BDY-T1-E3 Si4874BDY-T1-GE3 Text: Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested	Original	Si4874BDY Si4874BDY-T1-E3 Si4874BDY-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4874DY S-61803--Rev. 21-Jun-99	PDF
Untitled Abstract: No abstract text available Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4874DY 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC	Original	Si7456DP Si7456DP-T1-E3 Si7456DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive	Original	Si7846DP Si7846DP-T1-E3 Si7846DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF

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SI4874 Price and Stock

Vishay Intertechnologies SI4874BDY-T1-E3

Vishay Intertechnologies SI4874BDY-T1-GE3

Vishay Intertechnologies SI4874DY-T1

Fairchild Semiconductor Corporation SI4874DY

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SI4874 Datasheets (10)

SI4874 Datasheets Context Search

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