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    SI7101 Search Results

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    SI7101 Price and Stock

    Vishay Siliconix SI7101DN-T1-GE3

    MOSFET P-CH 30V 35A PPAK 1212-8
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    DigiKey SI7101DN-T1-GE3 Reel 12,000 3,000
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    SI7101DN-T1-GE3 Cut Tape 240 1
    • 1 $1.2
    • 10 $0.982
    • 100 $0.7636
    • 1000 $0.52722
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    SI7101DN-T1-GE3 Digi-Reel 1
    • 1 $1.2
    • 10 $0.982
    • 100 $0.7636
    • 1000 $0.52722
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    New Advantage Corporation SI7101DN-T1-GE3 3,000 1
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    Vishay Intertechnologies SI7101DN-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 26AK9926)
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    Avnet Americas SI7101DN-T1-GE3 Ammo Pack 17 Weeks, 4 Days 1
    • 1 $1.2
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    • 100 $0.764
    • 1000 $0.706
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    SI7101DN-T1-GE3 Ammo Pack 18 Weeks, 3 Days 1
    • 1 $1.28
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    • 100 $0.848
    • 1000 $0.79
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    SI7101DN-T1-GE3 Reel 17 Weeks 3,000
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    Mouser Electronics SI7101DN-T1-GE3 143,004
    • 1 $1.2
    • 10 $0.971
    • 100 $0.764
    • 1000 $0.527
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    Verical SI7101DN-T1-GE3 3,000 3,000
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    SI7101DN-T1-GE3 2,782 125
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    SI7101DN-T1-GE3 441 323
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    Newark SI7101DN-T1-GE3 Cut Tape 2,782 1
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    SI7101DN-T1-GE3 Cut Tape 441 1
    • 1 $0.155
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    • 100 $0.155
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    SI7101DN-T1-GE3 Reel 3,000
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    TTI SI7101DN-T1-GE3 Reel 12,000 3,000
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    TME SI7101DN-T1-GE3 1
    • 1 $1.116
    • 10 $0.96
    • 100 $0.781
    • 1000 $0.614
    • 10000 $0.592
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    Avnet Asia SI7101DN-T1-GE3 21 Weeks 3,000
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    Chip1Stop SI7101DN-T1-GE3 3,000
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    EBV Elektronik SI7101DN-T1-GE3 18 Weeks 3,000
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    SI7101 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI-71011-F Bel Fuse SI-71011-F Scan PDF
    SI7101DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 35A PPAK 1212-8 Original PDF

    SI7101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7101DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0072 at VGS = - 10 V - 35d 0.0130 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		PDF Si7101DN Si7101DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7101DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0072 at VGS = - 10 V - 35d 0.0130 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		PDF Si7101DN Si7101DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7101DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si7101DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: É"1! fiy r r ì_ T /smon_ /y n n n T /snnn_ /snnn T /snnn_ /snnn T /smnn_ 10OOpF, 2KV NOTES: a SHIELD GROUND 1.0 PINS WITHOUT ELECTRICAL CONNECTION ARE OMITTED. ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 1 0 - P 1 1 ' P 1 3 -P 1 2 ’P 1 5 -P 1 4 )


    OCR Scan     		PDF 10OOpF, 100KHz, SI-71010