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    SI717 Price and Stock

    Vishay Siliconix SI7172ADP-T1-RE3

    MOSFET N-CH 200V PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7172ADP-T1-RE3 Reel 9,000 3,000
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    • 10000 $0.43458
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    SI7172ADP-T1-RE3 Digi-Reel 1
    • 1 $1.16
    • 10 $0.946
    • 100 $0.736
    • 1000 $0.50818
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    SI7172ADP-T1-RE3 Cut Tape 1
    • 1 $1.16
    • 10 $0.946
    • 100 $0.736
    • 1000 $0.50818
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    Vishay Siliconix SI7172DP-T1-GE3

    MOSFET N-CH 200V 25A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7172DP-T1-GE3 Cut Tape 6,497 1
    • 1 $3.54
    • 10 $2.312
    • 100 $1.6125
    • 1000 $1.21689
    • 10000 $1.21689
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    SI7172DP-T1-GE3 Reel 3,000
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    • 10000 $1.1375
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    SI7172DP-T1-GE3 Digi-Reel 1
    • 1 $3.54
    • 10 $2.312
    • 100 $1.6125
    • 1000 $1.21689
    • 10000 $1.21689
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    Quest Components SI7172DP-T1-GE3 5
    • 1 $2.2058
    • 10 $2.0293
    • 100 $2.0293
    • 1000 $2.0293
    • 10000 $2.0293
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    SI7172DP-T1-GE3 5
    • 1 $2.2058
    • 10 $2.0293
    • 100 $2.0293
    • 1000 $2.0293
    • 10000 $2.0293
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    Vishay Siliconix SI7178DP-T1-GE3

    MOSFET N-CH 100V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7178DP-T1-GE3 Reel 6,000 3,000
    • 1 -
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    • 10000 $1.25091
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    SI7178DP-T1-GE3 Cut Tape 1,052 1
    • 1 $2.88
    • 10 $2.394
    • 100 $1.9057
    • 1000 $1.36819
    • 10000 $1.36819
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    SI7178DP-T1-GE3 Digi-Reel 1
    • 1 $2.88
    • 10 $2.394
    • 100 $1.9057
    • 1000 $1.36819
    • 10000 $1.36819
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    RS SI7178DP-T1-GE3 Bulk 3,000
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    • 10000 $3.05
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    Vishay Siliconix SI7174DP-T1-GE3

    MOSFET N-CH 75V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7174DP-T1-GE3 Reel 3,000 3,000
    • 1 -
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    • 10000 $1.425
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    SI7174DP-T1-GE3 Cut Tape 357 1
    • 1 $4.18
    • 10 $2.75
    • 100 $1.9375
    • 1000 $1.47785
    • 10000 $1.47785
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    SI7174DP-T1-GE3 Digi-Reel 1
    • 1 $4.18
    • 10 $2.75
    • 100 $1.9375
    • 1000 $1.47785
    • 10000 $1.47785
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    ES Components SI7174DP-T1-GE3
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    New Advantage Corporation SI7174DP-T1-GE3 3,000 1
    • 1 -
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    • 10000 $1.84
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    Vishay Siliconix SI7170DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7170DP-T1-GE3 Reel
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    Find more SI717 price and stock on Findchips.com

    SI717 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI7170DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A PPAK 8SOIC Original PDF
    SI7172ADP-T1-RE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 200V POWERPAK SO-8 Original PDF
    SI7172DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 25A PPAK 8SOIC Original PDF
    SI7174DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 60A PPAK 8SOIC Original PDF
    SI7178DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A PPAK 8SOIC Original PDF

    SI717 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package


    Original     		PDF Si7172DP Si7172DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN609

    Abstract: Si7172DP
    Text: Si7172DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si7172DP AN609, 09-Jul-08 AN609

    AN609

    Abstract: Si7170DP
    Text: Si7170DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When


    Original     		PDF Si7170DP AN609, 11-Apr-08 AN609

    a2728

    Abstract: Si7178DP
    Text: SPICE Device Model Si7178DP Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7178DP S-81925-Rev. 25-Aug-08 a2728

    SI7172DP-T1-GE3

    Abstract: Si7172DP
    Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package


    Original     		PDF Si7172DP Si7172DP-T1-GE3 18-Jul-08

    so 54 t

    Abstract: Si7178DP-T1-GE3 Si7178DP
    Text: New Product Si7178DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.014 at VGS = 10 V 60 47.5 nC • • • • S • Primary Side Switch • POL • Intermediate Bus Converter 5.15 mm 1


    Original     		PDF Si7178DP Si7178DP-T1-GE3 08-Apr-05 so 54 t

    Si7172DP

    Abstract: Si7172DP-T1-GE3 si7172
    Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package


    Original     		PDF Si7172DP Si7172DP-T1-GE3 11-Mar-11 si7172

    Si7174DP

    Abstract: Si7174DP-T1-GE3 S8078 si7174
    Text: New Product Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 75 0.007 at VGS = 10 V 60 47.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS


    Original     		PDF Si7174DP Si7174DP-T1-GE3 08-Apr-05 S8078 si7174

    Si7178DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7178DP Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7178DP 18-Jul-08

    Si7172DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7172DP 18-Jul-08

    Si7174DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7174DP 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package


    Original     		PDF Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 75 0.007 at VGS = 10 V 60 47.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS


    Original     		PDF Si7174DP Si7174DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7174DP

    Abstract: SI7174DP-T1-GE3 SI7174DPT1GE3
    Text: New Product Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 75 0.007 at VGS = 10 V 60 47.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS


    Original     		PDF Si7174DP Si7174DP-T1-GE3 18-Jul-08 SI7174DPT1GE3

    Si7174DP

    Abstract: Si7174DP-T1-GE3
    Text: New Product Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 75 0.007 at VGS = 10 V 60 47.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS


    Original     		PDF Si7174DP Si7174DP-T1-GE3 11-Mar-11

    mosfet equivalent

    Abstract: Si7178DP
    Text: New Product Si7178DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.014 at VGS = 10 V 60 47.5 nC • • • • S • Primary Side Switch • POL • Intermediate Bus Converter 5.15 mm 1


    Original     		PDF Si7178DP Si7178DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 mosfet equivalent

    Untitled

    Abstract: No abstract text available
    Text: Si7172DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) g 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 VDS (V) 200 Qg (TYP.) 34 D 5 D 6 • Low thermal resistance PowerPAK package • 100 % Rg and UIS tested


    Original     		PDF Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7170DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0034 at VGS = 10 V 40g 0.0043 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 29 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • Notebook PC Core - Low Side • VRM POL


    Original     		PDF Si7170DP 2002/95/EC Si7170DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7178DP

    Abstract: AN609
    Text: Si7178DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7178DP AN609 25-Mar-08

    SI7174DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7174DP capacit353 S-81926-Rev. 25-Aug-08

    Untitled

    Abstract: No abstract text available
    Text: Si7172DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) g 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 VDS (V) 200 Qg (TYP.) 34 D 5 D 6 • Low thermal resistance PowerPAK package • 100 % Rg and UIS tested


    Original     		PDF Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7174DP www.vishay.com Vishay Siliconix N-Channel 75 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7174DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package


    Original     		PDF Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 75 0.007 at VGS = 10 V 60 47.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS


    Original     		PDF Si7174DP Si7174DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12