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    SI786 Price and Stock

    Vishay Siliconix SI7868ADP-T1-E3

    MOSFET N-CH 20V 40A PPAK SO-8
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    DigiKey SI7868ADP-T1-E3 Digi-Reel 2,752 1
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    SI7868ADP-T1-E3 Cut Tape 2,752 1
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    Vishay Siliconix SI7860DP-T1-E3

    MOSFET N-CH 30V 11A PPAK SO-8
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    Vishay Siliconix SI7866ADP-T1-E3

    MOSFET N-CH 20V 40A PPAK SO-8
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    DigiKey SI7866ADP-T1-E3 Digi-Reel 1
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    Bristol Electronics SI7866ADP-T1-E3 48 3
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    Quest Components SI7866ADP-T1-E3 38
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    SI7866ADP-T1-E3 32
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    Vishay Siliconix SI7860DP-T1-GE3

    MOSFET N-CH 30V 11A PPAK SO-8
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    Vishay Siliconix SI7860ADP-T1-E3

    MOSFET N-CH 30V 11A PPAK SO-8
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    SI786 Datasheets (89)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI786 Vishay Siliconix Dual-Output Power-Supply Controller Original PDF
    Si786 Vishay Telefunken Dual Output Power Supply Controller Original PDF
    SI7860ADP Vishay Siliconix MOSFETs Original PDF
    Si7860ADP SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI7860ADP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 11A PPAK 8SOIC Original PDF
    SI7860ADP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 11A PPAK 8SOIC Original PDF
    Si7860DP Vishay Intertechnology N-Channel Reduced Q g , Fast Switching MOSFET Original PDF
    SI7860DP Vishay Siliconix MOSFETs Original PDF
    Si7860DP SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI7860DP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 11A PPAK 8SOIC Original PDF
    SI7860DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 11A PPAK 8SOIC Original PDF
    SI7862ADP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 16V 18A PPAK 8SOIC Original PDF
    SI7862ADP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 16V 18A PPAK 8SOIC Original PDF
    Si7862DP Vishay Intertechnology N-Channel 16-V (D-S) MOSFET Original PDF
    SI7862DP Vishay Siliconix MOSFETs Original PDF
    Si7862DP SPICE Device Model Vishay N-Channel 16-V (D-S) MOSFET Original PDF
    Si7864DP Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    SI7864DP Vishay Siliconix MOSFETs Original PDF
    Si7864DP SPICE Device Model Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    SI7866ADP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 40A PPAK 8SOIC Original PDF

    SI786 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4800 mosfet

    Abstract: Si7866DP
    Text: Si7866DP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and RG) Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00325 @ VGS = 4.5 V 25 APPLICATIONS D Low-Side MOSFET in Synchronous Buck


    Original     		Si7866DP S-20722--Rev. 27-May-02 4800 mosfet PDF

    Si7866DP

    Abstract: No abstract text available
    Text: Si7866DP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and RG) Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 APPLICATIONS D Low-Side MOSFET in Synchronous Buck


    Original     		Si7866DP S-21412--Rev. 05-Aug-02 PDF

    SI7866ADP-T1-E3

    Abstract: Si7866ADP Si7866DP-T1 74053 SI7866DP Si7866DP-T1-E3
    Text: Specification Comparison Vishay Siliconix Si7866ADP vs. Si7866DP Description: N-Channel, 20 V D-S MOSFET Package: PowerPAK SO-8 Pin Out: Identical Part Number Replacements: Si7866ADP-T1-E3 Replaces Si7866DP-T1-E3 Si7866ADP-T1-E3 Replaces Si7866DP-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		Si7866ADP Si7866DP Si7866ADP-T1-E3 Si7866DP-T1-E3 Si7866DP-T1 74053 PDF

    Si7868ADP

    Abstract: Si7868ADP-T1-E3 Si7868DP Si7868DP-T1 Si7868DP-T1-E3
    Text: Specification Comparison Vishay Siliconix Si7868ADP vs. Si7868DP Description: Package: Pin Out: N-Channel, 20-V D-S MOSFET PowerPAK SO-8 Identical Part Number Replacements: Si7868ADP-T1-E3 Replaces Si7868DP-T1-E3 Si7868ADP-T1-E3 Replaces Si7868DP-T1 Summary of Performance:


    Original     		Si7868ADP Si7868DP Si7868ADP-T1-E3 Si7868DP-T1-E3 Si7868DP-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Not recommended for new designs, please refer to Si786 Si9130 Vishay Siliconix Pin-Programmable Dual Controller - Portable PCs FEATURES • Fixed 5 V and Programmable 3.3 V, 3.45 V, or 3.6 V Step-Down Converters • Less than 500 µA Quiescent Current per Converter


    Original     		Si786 Si9130 Si9130 Si786 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)


    Original     		Si7864ADP Si7864ADP-T1-E3 Si7864ADP-T1-GE3 11-Mar-11 PDF

    Si7864ADP-T1-E3

    Abstract: Si7864ADP
    Text: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)


    Original     		Si7864ADP Si7864ADP-T1-E3 Si7864ADP-T1-GE3 18-Jul-08 PDF

    7555

    Abstract: 9006 AN609 RC filter circuit
    Text: Si7862ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si7862ADP AN609 03-Aug-07 7555 9006 RC filter circuit PDF

    V23150

    Abstract: Si7868ADP Si7868ADP-T1-E3
    Text: Si7868ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00225 at VGS = 10 V 40 0.00275 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 46 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET


    Original     		Si7868ADP Si7868ADP-T1-E3 Si7868ADP-T1-GE3 18-Jul-08 V23150 PDF

    9692-1

    Abstract: an 7073 AN609 Si7860ADP 12888
    Text: Si7860ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si7860ADP AN609 03-Aug-07 9692-1 an 7073 12888 PDF

    Si7866ADP

    Abstract: Si7866ADP-T1-E3 Si7866ADP-T1-GE3
    Text: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET


    Original     		Si7866ADP Si7866ADP-T1-E3 Si7866ADP-T1-GE3 18-Jul-08 PDF

    an 7073

    Abstract: AN609 Si7860DP
    Text: Si7860DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si7860DP AN609 06-Aug-07 an 7073 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7860DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.008 at VGS = 10 V 18 0.011 at VGS = 4.5 V 15 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si7860DP Si7860DP-T1 Si7860DP-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si7862DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7862DP Vishay Siliconix N-Channel 16-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si7862DP 14-Mar-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET


    Original     		Si7866ADP Si7866ADP-T1-E3 Si7866ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)


    Original     		Si7864ADP Si7864ADP-T1-E3 Si7864ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    MAX786

    Abstract: Si4410 Si4435 Si786 Si9130 Si9140 Si9712
    Text: Si786 Dual-Output Power-Supply Controller for Notebook Computers Features D D D D Fixed 5-V and 3.3-V Step-down Converters Less than 500-mA Quiescent Current per converter 25-mA Shutdown Current 5.5-V to 30-V Operating Range Description The Si786 Dual Controller for Portable Computer Power


    Original     		Si786 500-mA 25-mA Si786 MAX786 S-51155--Rev. 20-Nov-96 Si4410 Si4435 Si9130 Si9140 Si9712 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7862ADP Vishay Siliconix N-Channel 16-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 16 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0055 at VGS = 2.5 V 23 Qg (Typ.) 54 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.3 mΩ RDS(on)


    Original     		Si7862ADP Si7862ADP-T1-E3 Si7862ADP-T1-GE3 08-Apr-05 PDF

    Si7860DP

    Abstract: No abstract text available
    Text: Si7860DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for High Efficiency D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile PRODUCT SUMMARY VDS V 30 rDS(on) (W)


    Original     		Si7860DP 07-mm S-20461--Rev. 15-Apr-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7860DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.008 at VGS = 10 V 18 0.011 at VGS = 4.5 V 15 PowerPAK SO-8 • Buck Converter - High Side or Low Side • Synchronous Rectifier


    Original     		Si7860DP Si7860DP-T1 Si7860DP-T1-E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 @ VGS = 10 V 29 0.0042 @ VGS = 4.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5-V Rated Low 3.5-mΩ rDS(on)


    Original     		Si7864ADP Si7864ADP-T1--E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si786 Vishay Siliconix Dual-Output Power-Supply Controller FEATURES D D D D Fixed 5-V and 3.3-V Step-down Converters Less than 500-mA Quiescent Current per Converter 25-mA Shutdown Current 5.5-V to 30-V Operating Range DESCRIPTION The Si786 Dual Controller for Portable Computer Power


    Original     		Si786 500-mA 25-mA Si786 MAX786 S-40807--Rev. 26-Apr-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7860DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.008 at VGS = 10 V 18 0.011 at VGS = 4.5 V 15 PowerPAK SO-8 • Buck Converter - High Side or Low Side • Synchronous Rectifier


    Original     		Si7860DP 07-mm Si7860DP-T1 Si7860DP-T1--E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 at VGS = 10 V 29 0.0042 at VGS = 4.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ rDS(on)


    Original     		Si7864ADP Si7864ADP-T1-E3 08-Apr-05 PDF