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    SI7866 Price and Stock

    Vishay Siliconix SI7866ADP-T1-E3

    MOSFET N-CH 20V 40A PPAK SO-8
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    DigiKey SI7866ADP-T1-E3 Digi-Reel 1
    • 1 $2.38
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    SI7866ADP-T1-E3 Cut Tape
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    SI7866ADP-T1-E3 Reel
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    RS SI7866ADP-T1-E3 Bulk 3,000
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    Bristol Electronics SI7866ADP-T1-E3 48 3
    • 1 -
    • 10 $1.875
    • 100 $0.7031
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    Quest Components SI7866ADP-T1-E3 38
    • 1 $2.5
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    SI7866ADP-T1-E3 32
    • 1 $1.35
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    ES Components SI7866ADP-T1-E3
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    Vishay Siliconix SI7866ADP-T1-GE3

    MOSFET N-CH 20V 40A PPAK SO-8
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    Vishay Intertechnologies SI7866DP-T1

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    Bristol Electronics SI7866DP-T1 6,774
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    Vishay BLH SI7866ADP-T1-GE3

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    Bristol Electronics SI7866ADP-T1-GE3 947 3
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    Vishay Intertechnologies SI7866ADP-T1-E3

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    Bristol Electronics SI7866ADP-T1-E3 30
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    Quest Components SI7866ADP-T1-E3 1,203
    • 1 $10.9674
    • 10 $10.9674
    • 100 $10.9674
    • 1000 $5.4837
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    SI7866 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7866ADP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 40A PPAK 8SOIC Original PDF
    SI7866ADP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 40A PPAK 8SOIC Original PDF
    Si7866DP Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    SI7866DP Vishay Siliconix MOSFETs Original PDF
    Si7866DP SPICE Device Model Vishay N-Channel 20-V (D-S) MOSFET Original PDF

    SI7866 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4800 mosfet

    Abstract: Si7866DP
    Text: Si7866DP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and RG) Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00325 @ VGS = 4.5 V 25 APPLICATIONS D Low-Side MOSFET in Synchronous Buck


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    PDF Si7866DP S-20722--Rev. 27-May-02 4800 mosfet

    Si7866DP

    Abstract: No abstract text available
    Text: Si7866DP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and RG) Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 APPLICATIONS D Low-Side MOSFET in Synchronous Buck


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    PDF Si7866DP S-21412--Rev. 05-Aug-02

    SI7866ADP-T1-E3

    Abstract: Si7866ADP Si7866DP-T1 74053 SI7866DP Si7866DP-T1-E3
    Text: Specification Comparison Vishay Siliconix Si7866ADP vs. Si7866DP Description: N-Channel, 20 V D-S MOSFET Package: PowerPAK SO-8 Pin Out: Identical Part Number Replacements: Si7866ADP-T1-E3 Replaces Si7866DP-T1-E3 Si7866ADP-T1-E3 Replaces Si7866DP-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


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    PDF Si7866ADP Si7866DP Si7866ADP-T1-E3 Si7866DP-T1-E3 Si7866DP-T1 74053

    Si7866ADP

    Abstract: Si7866ADP-T1-E3 Si7866ADP-T1-GE3
    Text: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET


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    PDF Si7866ADP Si7866ADP-T1-E3 Si7866ADP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET


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    PDF Si7866ADP Si7866ADP-T1-E3 Si7866ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7866ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 20 (A)a 0.0024 @ VGS = 10 V 40 0.0030 @ VGS = 4.5 V 40 D D D D D Qg (Typ) 39 nC TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized


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    PDF Si7866ADP Si7866ADP-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET


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    PDF Si7866ADP Si7866ADP-T1-E3 Si7866ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7866DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized 100% Rg Tested APPLICATIONS


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    PDF Si7866DP Si7866DP-T1 08-Apr-05

    Si7866DP

    Abstract: 29a65
    Text: \\\ SPICE Device Model Si7866DP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si7866DP 0-to-10V 28-Jun-02 29a65

    Si7866ADP-T1-E3

    Abstract: Si7866ADP-T1-GE3 Si7866ADP A1-2539 POWER MOSFET Rise Time 1 ns
    Text: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET


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    PDF Si7866ADP Si7866ADP-T1-E3 Si7866ADP-T1-GE3 08-Apr-05 A1-2539 POWER MOSFET Rise Time 1 ns

    SI7866ADP-T1-E3

    Abstract: Si7866ADP
    Text: Si7866ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ) 39 nC PowerPAK SO-8 COMPLIANT • Low-Side MOSFET in Synchronous Buck DC/DC Converters in Desktops


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    PDF Si7866ADP Si7866ADP-T1-E3 08-Apr-05

    A 0503

    Abstract: MOSFET 913 AN609 Si7866ADP
    Text: Si7866ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si7866ADP AN609 29-Nov-05 A 0503 MOSFET 913

    Si7866DP

    Abstract: Si7866DP-T1
    Text: Si7866DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized 100% Rg Tested APPLICATIONS


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    PDF Si7866DP Si7866DP-T1 S-31727--Rev. 18-Aug-03

    Untitled

    Abstract: No abstract text available
    Text: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET


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    PDF Si7866ADP Si7866ADP-T1-E3 Si7866ADP-T1-GE3 11-Mar-11

    Si7866DP

    Abstract: Si7866DP-T1
    Text: Si7866DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized 100% Rg Tested APPLICATIONS


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    PDF Si7866DP Si7866DP-T1 18-Jul-08

    Diode RL 4B

    Abstract: Si7866ADP SI7866ADP-T1-E3
    Text: Si7866ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 20 (A)a 0.0024 @ VGS = 10 V 40 0.0030 @ VGS = 4.5 V 40 D D D D D Qg (Typ) 39 nC TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized


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    PDF Si7866ADP Si7866ADP-T1--E3 S-50831--Rev. 25-Apr-05 Diode RL 4B SI7866ADP-T1-E3

    Si7866ADP

    Abstract: Si7866ADP-T1-E3 Si7866ADP-T1-GE3
    Text: Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 40 0.0030 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ.) 39 nC PowerPAK SO-8 • • • • • Halogen-free available TrenchFET Power MOSFET


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    PDF Si7866ADP Si7866ADP-T1-E3 Si7866ADP-T1-GE3 11-Mar-11

    Si7866ADP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7866ADP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si7866ADP S-51946Rev. 03-Oct-05

    t2d 76 diode value

    Abstract: 2RSTPE330M9 LTC3854DDB 3854 ltc3608 LTC3854EMSE LTC3854 LTC3854E t2d 76 diode LTC3854I
    Text: LTC3854 Small Footprint, Wide VIN Range Synchronous Step-Down DC/DC Controller Description Features n n n n n n n n n n n n n n Wide Operating VIN Range: 4.5V to 38V RSENSE or DCR Current Sensing ±1% 0.8V Reference Accuracy Over Temperature 400kHz Switching Frequency


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    PDF LTC3854 400kHz 12-Pin LTC3854® MSOP-10E LTC3834/ LTC3834-1 140kHz 650kHz, 100kHz t2d 76 diode value 2RSTPE330M9 LTC3854DDB 3854 ltc3608 LTC3854EMSE LTC3854 LTC3854E t2d 76 diode LTC3854I

    HA400

    Abstract: SI3475 pcb 200W audio amplifier XfR 3MH CMD2836 NTCG164BH103H siliconix application 1976 LM5027 3104-2-00-01-00-00-08-0 da2319
    Text: National Semiconductor Application Note 1976 Terry Allinder August 19, 2009 Introduction Theory of Operation The LM5027 evaluation board is designed to provide the design engineer with a fully functional power converter based on the Active Clamp Forward topology to evaluate the


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    PDF LM5027 AN-1976 HA400 SI3475 pcb 200W audio amplifier XfR 3MH CMD2836 NTCG164BH103H siliconix application 1976 3104-2-00-01-00-00-08-0 da2319

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


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    PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    SL04-GS08

    Abstract: capacitor 100nf 25v 0805 capacitor 100nf 16v 10 0603 x7r vishay TPSD686M020R0070 capacitor 100nf 16v 10 0603 x7r vishay datasheet capacitor 100nf 16v 10% 0603 x7r vishay EPAD-MSOP-10 Vitramon MIC2159 SD103AWS-V-GS08
    Text: MIC2159 Evaluation Board 400kHz ePAD MSOP Synchronous Buck Controller General Description The MIC2159 is a high-efficiency, simple to use 400kHz PWM synchronous buck control IC housed in a small ePAD MSOP-10 package. The MIC2159 allows compact DC-to-DC solutions with a minimal external component


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    PDF MIC2159 400kHz 400kHz MSOP-10 M9999-103007-A SL04-GS08 capacitor 100nf 25v 0805 capacitor 100nf 16v 10 0603 x7r vishay TPSD686M020R0070 capacitor 100nf 16v 10 0603 x7r vishay datasheet capacitor 100nf 16v 10% 0603 x7r vishay EPAD-MSOP-10 Vitramon SD103AWS-V-GS08

    Untitled

    Abstract: No abstract text available
    Text: LM5034 www.ti.com SNVS347A – FEBRUARY 2005 – REVISED APRIL 2013 LM5034 High Voltage Dual Interleaved Current Mode Controller with Active Clamp Check for Samples: LM5034 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • •


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    PDF LM5034 SNVS347A LM5034

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


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    PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415