JEC 0.1 S
Abstract: JEC ELECTRONICS uv light PHOTO detector JEC 400 JEC 0.1 SO uv PHOTO detector UV photodiodes UV diode 280 nm solar photodiodes UV flame detection
Text: JEC Series SiC Ultraviolet Photodiodes SiC Ultraviolet Photodiodes Boston Electronics’s Silicon Carbide SiC photodetectors are photovoltaic devices similar to silicon solar cells, and need no external power supply (bias) to operate. Only light shorter than a wavelength of ~400 nm is absorbed and produces photocurrent.
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SIC01S-18ISO90
Abstract: SiC Photodiodes
Text: SIC01S-18ISO90 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC
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SIC01S-18ISO90
SIC01S-18ISO90
SiC Photodiodes
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SIC01S-C18
Abstract: No abstract text available
Text: SIC01S-C18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01S-C18
SIC01S-C18
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SIC01L-18
Abstract: No abstract text available
Text: SIC01L-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01L-18
SIC01L-18
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SIC01S-18
Abstract: No abstract text available
Text: SIC01S-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01S-18
SIC01S-18
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SIC01XL-5
Abstract: No abstract text available
Text: SIC01XL-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01XL-5
SIC01XL-5
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SIC01M-18
Abstract: No abstract text available
Text: SIC01M-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01M-18
SIC01M-18
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SIC01L-5
Abstract: No abstract text available
Text: SIC01L-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01L-5
SIC01L-5
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SIC01L-C5
Abstract: No abstract text available
Text: SIC01L-C5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01L-C5
SIC01L-C5
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SIC01M-5LENS
Abstract: No abstract text available
Text: SIC01M-5LENS V 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01M-5LENS
SIC01M-5LENS
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SIC01S-B18
Abstract: No abstract text available
Text: SIC01S-B18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01S-B18
SIC01S-B18
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Untitled
Abstract: No abstract text available
Text: SiC-photodiodes JEC1,6I / JEC5I preliminary data sheet characteristics : ♦ ♦ ♦ ♦ ♦ ♦ ♦ large area monolithic SiC photodiodes active aerea: 1,55 or 5 mm² spectral range: 215 … 360 nm high UV-responsivity: 0,16 A/W photodiode isolated to package
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O39-package
AD795,
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EPD-310-0-0
Abstract: 320nm
Text: EPD-310-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVB UV glass with filter SiC TO-5 Description High spectral sensitivity in the UVB range 290 nm - 330nm , low cost chip based on SiC 1,2 Environmental technology, analytical techniques,
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EPD-310-0-0
330nm)
320nm
D-12555
320nm
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Untitled
Abstract: No abstract text available
Text: SIC01D-B18 rev.6.1 04/15 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01D-B18
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Untitled
Abstract: No abstract text available
Text: EPD-270-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVC UV glass with filter SiC TO-5 / TO-18 Description High spectral sensitivity in the UVC range 230 nm - 285nm , low cost chip based on SiC 1,2 Applications Environmental technology, analytical techniques,
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EPD-270-0-0
285nm)
254nm
D-12555
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Untitled
Abstract: No abstract text available
Text: EPD-280-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVA - UVC UV glass SiC TO-5 / TO-18 Description High spectral sensitivity in the UVA-UVC range 220 nm - 380nm , low cost chip based on SiC, excellence stability on high irradiance Environmental
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EPD-280-0-0
380nm)
254nm
D-12555
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Untitled
Abstract: No abstract text available
Text: UV-Photodiodes EPD-280-0-0.3-L* Wavelength range Type Technology Case UVA - UVC UV glass with lens SiC TO-5 Description High spectral sensitivity by lens in the UVA-UVC range 220 nm - 380nm , low cost chip based on SiC 1,2 Responsivity 1 Applications Environmental technology, analytical techniques,
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EPD-280-0-0
380nm)
254nm
D-12555
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westinghouse transistors
Abstract: No abstract text available
Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,
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10-kV
westinghouse transistors
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uv-tiamo-m
Abstract: No abstract text available
Text: UV-TIAMO-M v 3.0 Description The UV-TIAMO devices are using modern hybride technology to cancel unwanted signal disturbances caused by moisture or electromagnetic radiation. The stable 0…5V output voltage can be directly connected to a SPC controller or a voltage multimeter. No external amplifier is needed.
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uv-tiamo-s
Abstract: No abstract text available
Text: UV-TIAMO-S v 3.0 Description The UV-TIAMO devices are using modern hybride technology to cancel unwanted signal disturbances caused by moisture or electromagnetic radiation. The stable 0…5V output voltage can be directly connected to a SPC controller or a voltage multimeter. No external amplifier is needed.
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uv-tiamo
Abstract: No abstract text available
Text: UV-TIAMO v 3.0 Description The UV-TIAMO devices are using modern hybride technology to cancel unwanted signal disturbances caused by moisture or electromagnetic radiation. The stable 0…5V output voltage can be directly connected to a SPC controller or a voltage multimeter. No external amplifier is needed.
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uv-tiamo-bl
Abstract: No abstract text available
Text: UV-TIAMO-BL v 3.0 Description The UV-TIAMO devices are using modern hybride technology to cancel unwanted signal disturbances caused by moisture or electromagnetic radiation. The stable 0…5V output voltage can be directly connected to a SPC controller or a voltage multimeter. No external amplifier is needed.
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E3081
Abstract: HT2080 CINOX OSCILLATOR CMOS technology length 0.4um 12GE 88Au HT1104HZ HT2160 IC CD4066 quad bilateral switch HTMOS
Text: High Temperature Electronics for Sensor Interface and Data Acquisition Sensors Expo, October 7, 1998 Jay Goetz – Applications Engineer Honeywell SSEC 12001 St Hwy 55 Plymouth MN 55441 612 954-2520 jay.goetz@corp.honeywell.com Introduction High Temperature designs need components rated to operate in the harsh environment in which they will be
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Report-1997,
E3081
HT2080
CINOX OSCILLATOR
CMOS technology length 0.4um
12GE
88Au
HT1104HZ
HT2160
IC CD4066 quad bilateral switch
HTMOS
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FPT102
Abstract: FPT720
Text: 1-15 Photodiodes BV lR - 5.0 iiA, H < 0.1 IIW/cm» Min Typ vn V R Tungsten R Q 0.9 ii Responïivtty. Respontivity •r ■l T (jA/mW/cm1 iiA/mW/cm' V „« -1 0 V V „ = -1 0 V H £ 0.1 MW/cm> H —20 mW/em* Tc = 2854K No bias, GaAs Typ Max Min Typ Min Typ
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OCR Scan
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--10V
2854K
FPT102
FPT720
FPT1I02
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