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    SIEGET 45 Search Results

    SIEGET 45 Datasheets (1)

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    SIEGET 45 Siemens NPN Silicon RF Transistor Original PDF

    SIEGET 45 Datasheets Context Search

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    BFP520

    Abstract: 702 Z TRANSISTOR SIEMENS BFP520
    Text: Application Note No. 051 Discrete & RF Semiconductors R. Sedlmaier, HL HF AT SIEGET45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz This application note describes an example of a Low Noise Amplifier with the BFP520 5th Generation, SOT343 SIEGET 45-Line. Improved performance in Gain


    Original     		PDF BFP520 OT343) 45-Line. 15dBm) BFP520 702 Z TRANSISTOR SIEMENS BFP520

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs  For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1  Gold metallization for high reliability  SIEGET  45 - Line TSFP-4 to p v ie w !


    Original     		PDF BFP540F Dec-07-2001

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 45 BFP 540F NPN Silicon RF Transistor Preliminary data XYs  For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gms = 21 dB Noise Figure F = 0.9 dB 2 4 1  Gold metallization for high reliability  SIEGET  45 - Line TSFP-4 to p v ie w !


    Original     		PDF Jun-09-2000

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability 2 • SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05605 Q62702-F1818 OT-343 50Ohm -j100

    BFP-540

    Abstract: VPS05605 transistor BO 540 Transistor MJE 540
    Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05605 OT-343 50Ohm -j100 Jun-09-2000 BFP-540 VPS05605 transistor BO 540 Transistor MJE 540

    VPS05605

    Abstract: No abstract text available
    Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05605 OT-343 50Ohm -j100 Oct-27-1999 VPS05605

    marking BFP

    Abstract: No abstract text available
    Text: SIEGET 45 BFP 540ECSP NPN Silicon RF Transistor Preliminary data  For highest gain low noise amplifier XY at 1.8 GHz 4 Outstanding Gms = 21 dB 3 Noise Figure F = 0.9 dB 1  Gold metallization for high reliability  SIEGET  45 GHz fT- Line 2 •=Chip Scale Package


    Original     		PDF 540ECSP Aug-23-2000 marking BFP

    BFP540

    Abstract: INFINEON application note
    Text: SIEGET 45 BFP540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP540 VPS05605 OT343 50Ohm -j100 Aug-09-2001 BFP540 INFINEON application note

    BFP540F

    Abstract: No abstract text available
    Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs  For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1  Gold metallization for high reliability  SIEGET  45 - Line TSFP-4 to p v ie w !


    Original     		PDF BFP540F Aug-09-2001 BFP540F

    microwave transistor siemens bfp 420

    Abstract: 4144 lH21l BFP450 siemens MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT doppler radar SMX-1 BFP450 transistor s parameters noise sot-343 as
    Text: APPLICATIONS DISCRETE SEMICONDUCTORS Jakob Huber ● Gerhard Lohninger RF measurements on SIEGET bipolar transistors: Predicting performance straight from the wafer Multistage measurements are intended to ensure unrestricted operation of RF transistors. But until recently,


    Original     		PDF

    bfp540

    Abstract: INFINEON ATS BGA420
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


    Original     		PDF BFP540 OT343 bfp540 INFINEON ATS BGA420

    marking AUs

    Abstract: BFP420F BFP540FESD amplifier marking code a
    Text: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)


    Original     		PDF BFP540FESD marking AUs BFP420F BFP540FESD amplifier marking code a

    SOT363-Package

    Abstract: BGA428 SOT-363 dc voltage step up amplifier circuit AN062 BGA428 amplifier transistor application based circuit amplifier TRANSISTOR 12 GHZ
    Text: Application Note No. 062 Silicon Discretes A Low Parts Count Low Noise Amplifier for GPS Applications using BGA428 Features • Two-stage Low Noise Amplifier • SIEGET 45-Technology with 45 GHz f T • Small outline SOT363-Package • Low Noise Figure: 1.4 dB at 1.575 GHz


    Original     		PDF BGA428 45-Technology OT363-Package BGA428 45-Technology. AN062 SOT363-Package BGA428 SOT-363 dc voltage step up amplifier circuit AN062 amplifier transistor application based circuit amplifier TRANSISTOR 12 GHZ

    microwave transistor siemens bfp 420

    Abstract: RF Transistors smd transistor chart smd transistor NJ transistor R 405 doppler radar SMX-1 AG SMD TRANSISTOR Siemens transistors rf SIEMENS MICROWAVE RADIO 8 GHz
    Text: APPLICATIONS DISCRETE SEMICONDUCTORS Kurt Brenndörfer ● Gerhard Lohninger ● Lothar Musiol ● Jakob Huber Fourth-generation bipolar RF transistors with 25 GHz transit frequency: SIEGET heads the pack Since the very beginning of RF transistor development,


    Original     		PDF

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BFP540ESD BGA420
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance 3 2 4 typical value 1000 V HBM 1 • Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


    Original     		PDF BFP540ESD OT343 RF NPN POWER TRANSISTOR C 10-12 GHZ BFP540ESD BGA420

    Untitled

    Abstract: No abstract text available
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


    Original     		PDF BFP540ESD OT343

    transistor b 1238

    Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
    Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1


    Original     		PDF VPS05605 Q62702-F1794 OT-343 50Ohm 45GHz -j100 Sep-09-1998 transistor b 1238 Q62702-F1794 transistor bf 520 transistor bfp 520

    INFINEON ATS

    Abstract: BFP540 BGA420
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


    Original     		PDF BFP540 OT343 INFINEON ATS BFP540 BGA420

    Untitled

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


    Original     		PDF BFP540 OT343

    BFP540

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP540 VPS05605 OT343 50Ohm -j100 Jan-28-2004 BFP540

    BFP540

    Abstract: INFINEON ATS BGA420 Transistor BFP540
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP540 OT343 BFP540 INFINEON ATS BGA420 Transistor BFP540

    BFP540ESD

    Abstract: BGA420
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


    Original     		PDF BFP540ESD OT343 10may BFP540ESD BGA420

    Untitled

    Abstract: No abstract text available
    Text: SIEGET@45 BFP 540 Infineon technologies NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1818 OT-343

    amplifier siemens sot-363

    Abstract: BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343
    Text: Transistoren Transistors SIEGET -HF-BIPOLAR-Transistoren SIEGET^-RF-BIPOLAR-Transistors Type N = NPN P = PNP Maximum Ratings Characteristics r A = 25 °C Package G Fcèo V 1F min k mA -f*tot h mW GHz dB k mA Vce f V MHz dB G ms k mA Vce / V MHz Lead Code


    OCR Scan     		PDF OT-343 OT-143 fl235b05 amplifier siemens sot-363 BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343