BFP520
Abstract: 702 Z TRANSISTOR SIEMENS BFP520
Text: Application Note No. 051 Discrete & RF Semiconductors R. Sedlmaier, HL HF AT SIEGET45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz This application note describes an example of a Low Noise Amplifier with the BFP520 5th Generation, SOT343 SIEGET 45-Line. Improved performance in Gain
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BFP520
OT343)
45-Line.
15dBm)
BFP520
702 Z TRANSISTOR
SIEMENS BFP520
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Untitled
Abstract: No abstract text available
Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1 Gold metallization for high reliability SIEGET 45 - Line TSFP-4 to p v ie w !
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BFP540F
Dec-07-2001
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Untitled
Abstract: No abstract text available
Text: SIEGET 45 BFP 540F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gms = 21 dB Noise Figure F = 0.9 dB 2 4 1 Gold metallization for high reliability SIEGET 45 - Line TSFP-4 to p v ie w !
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Abstract: No abstract text available
Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability 2 • SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP-540
Abstract: VPS05605 transistor BO 540 Transistor MJE 540
Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05605
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BFP-540
VPS05605
transistor BO 540
Transistor MJE 540
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VPS05605
Abstract: No abstract text available
Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05605
OT-343
50Ohm
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marking BFP
Abstract: No abstract text available
Text: SIEGET 45 BFP 540ECSP NPN Silicon RF Transistor Preliminary data For highest gain low noise amplifier XY at 1.8 GHz 4 Outstanding Gms = 21 dB 3 Noise Figure F = 0.9 dB 1 Gold metallization for high reliability SIEGET 45 GHz fT- Line 2 •=Chip Scale Package
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540ECSP
Aug-23-2000
marking BFP
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BFP540
Abstract: INFINEON application note
Text: SIEGET 45 BFP540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
VPS05605
OT343
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INFINEON application note
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BFP540F
Abstract: No abstract text available
Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1 Gold metallization for high reliability SIEGET 45 - Line TSFP-4 to p v ie w !
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BFP540F
Aug-09-2001
BFP540F
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microwave transistor siemens bfp 420
Abstract: 4144 lH21l BFP450 siemens MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT doppler radar SMX-1 BFP450 transistor s parameters noise sot-343 as
Text: APPLICATIONS DISCRETE SEMICONDUCTORS Jakob Huber ● Gerhard Lohninger RF measurements on SIEGET bipolar transistors: Predicting performance straight from the wafer Multistage measurements are intended to ensure unrestricted operation of RF transistors. But until recently,
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bfp540
Abstract: INFINEON ATS BGA420
Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line • Pb-free RoHS compliant package 1)
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bfp540
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BGA420
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marking AUs
Abstract: BFP420F BFP540FESD amplifier marking code a
Text: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET 45 - Line • Pb-free (ROHS compliant) package 1)
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BFP540FESD
marking AUs
BFP420F
BFP540FESD
amplifier marking code a
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SOT363-Package
Abstract: BGA428 SOT-363 dc voltage step up amplifier circuit AN062 BGA428 amplifier transistor application based circuit amplifier TRANSISTOR 12 GHZ
Text: Application Note No. 062 Silicon Discretes A Low Parts Count Low Noise Amplifier for GPS Applications using BGA428 Features • Two-stage Low Noise Amplifier • SIEGET 45-Technology with 45 GHz f T • Small outline SOT363-Package • Low Noise Figure: 1.4 dB at 1.575 GHz
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BGA428
45-Technology
OT363-Package
BGA428
45-Technology.
AN062
SOT363-Package
BGA428 SOT-363
dc voltage step up amplifier circuit
AN062
amplifier transistor application based circuit
amplifier TRANSISTOR 12 GHZ
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microwave transistor siemens bfp 420
Abstract: RF Transistors smd transistor chart smd transistor NJ transistor R 405 doppler radar SMX-1 AG SMD TRANSISTOR Siemens transistors rf SIEMENS MICROWAVE RADIO 8 GHz
Text: APPLICATIONS DISCRETE SEMICONDUCTORS Kurt Brenndörfer ● Gerhard Lohninger ● Lothar Musiol ● Jakob Huber Fourth-generation bipolar RF transistors with 25 GHz transit frequency: SIEGET heads the pack Since the very beginning of RF transistor development,
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RF NPN POWER TRANSISTOR C 10-12 GHZ
Abstract: BFP540ESD BGA420
Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance 3 2 4 typical value 1000 V HBM 1 • Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line
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BFP540ESD
OT343
RF NPN POWER TRANSISTOR C 10-12 GHZ
BFP540ESD
BGA420
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Untitled
Abstract: No abstract text available
Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line
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transistor b 1238
Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1
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VPS05605
Q62702-F1794
OT-343
50Ohm
45GHz
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Sep-09-1998
transistor b 1238
Q62702-F1794
transistor bf 520
transistor bfp 520
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INFINEON ATS
Abstract: BFP540 BGA420
Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line • Pb-free RoHS compliant package 1)
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OT343
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Untitled
Abstract: No abstract text available
Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line • Pb-free RoHS compliant package 1)
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OT343
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BFP540
Abstract: No abstract text available
Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
VPS05605
OT343
50Ohm
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BFP540
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BFP540
Abstract: INFINEON ATS BGA420 Transistor BFP540
Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
OT343
BFP540
INFINEON ATS
BGA420
Transistor BFP540
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BFP540ESD
Abstract: BGA420
Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line
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BFP540ESD
OT343
10may
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BGA420
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Untitled
Abstract: No abstract text available
Text: SIEGET@45 BFP 540 Infineon technologies NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1818
OT-343
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amplifier siemens sot-363
Abstract: BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343
Text: Transistoren Transistors SIEGET -HF-BIPOLAR-Transistoren SIEGET^-RF-BIPOLAR-Transistors Type N = NPN P = PNP Maximum Ratings Characteristics r A = 25 °C Package G Fcèo V 1F min k mA -f*tot h mW GHz dB k mA Vce f V MHz dB G ms k mA Vce / V MHz Lead Code
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OT-343
OT-143
fl235b05
amplifier siemens sot-363
BFS480
HF-transistoren
SOT-363 fg
420 sot-363
SOT343
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