siemens inductor
Abstract: siemens CAPACITOR capacitor 1u0 35v D 835 SIEMENS gaas 680R BAS40-04W BC848B CGY81 transistor 835
Text: CGY 81 GaAs MMIC l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match
|
Original
|
PDF
|
Q627002G0078
siemens inductor
siemens CAPACITOR
capacitor 1u0 35v
D 835
SIEMENS gaas
680R
BAS40-04W
BC848B
CGY81
transistor 835
|
siemens CAPACITOR
Abstract: siemens inductor ACP885 transistor 835 "1u0 1206" D 835 680R BAS40-04W BC848B BCP72
Text: CGY 0819 GaAs MMIC l l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains Power ramp control
|
Original
|
PDF
|
Q62702G0076
siemens CAPACITOR
siemens inductor
ACP885
transistor 835
"1u0 1206"
D 835
680R
BAS40-04W
BC848B
BCP72
|
embedded dram timing
Abstract: B165H siemens capacitors te 4017 plc siemens ELETRONICOS "embedded dram"
Text: s Global PartnerChip for Systems on Silicon Embedded DRAM A Siemens AG Österreich Erdberger Lände 26 1030 Wien ట +43 -1-1707-35611 Fax (+43)-1-1707-55973 Email: elisabeth.schwarz@ siemens.at Innovations that fit by Siemens Semiconductors AUS 2nd Edition 1997
|
Original
|
PDF
|
B-1060
400net
embedded dram timing
B165H
siemens capacitors
te 4017
plc siemens
ELETRONICOS
"embedded dram"
|
SIEMENS SIKOREL 125 B41592
Abstract: B41592 B43405 siemens B43570 Siemens B43507 k119 b41590 SIEMENS SIKOREL 231 B43507-B0108-M SIKOREL 125
Text: Inhaltsverzeichnis Bauformen-Übersicht • Bauformnummern-Verzeichnis Seite 5 8 Allgemeine technische Angaben 11 Angaben zur Qualität 47 Schraubanschluß-Kondensatoren 55 Lötstift-Kondensatoren 129 Snap-in-Kondensatoren 149 3-Pin-Kondensatoren 179 Lötstern-Kondensatoren
|
Original
|
PDF
|
10-9/h)
SIEMENS SIKOREL 125 B41592
B41592
B43405
siemens B43570
Siemens B43507
k119
b41590
SIEMENS SIKOREL 231
B43507-B0108-M
SIKOREL 125
|
siemens CAPACITOR B43050 gpf
Abstract: vent capacitor siemens CAPACITOR gpf SIEMENS SIKOREL 125 B41592 B41588 siemens capacitor siemens 230 gas discharge tube 90 88 pm siemens CAPACITOR B43050 SIEMENS SIKOREL B43507-B0108-M B43507 siemens capacitor
Text: Contents Overview of Terminals and Quality Grades Page 5 8 General Technical Information 11 Quality Assurance 47 Capacitors with Screw Terminals 55 Capacitors with Solder Pins 129 Snap-In Capacitors 149 3-Pin Capacitors 179 Capacitors with Soldering Star 201
|
Original
|
PDF
|
|
D501
Abstract: B37741 k1060 smd tabellen Siemens Matsua Components Bestellnummern-Verzeichnis K0682 d5050 nf schaltungen NDKM B37872
Text: Inhaltsverzeichnis Bestellnummernverzeichnis Seite 5 8 Lieferübersicht Elektrische Kurzdaten 11 26 Standard-Chip-Kondensatoren Slim-Line Kondensatoren 27 55 Bedrahtete Kondensatoren, EIA-Standard Bedrahtete Kondensatoren, CECC-Standard 59 68 Allgemeine technische Angaben
|
Original
|
PDF
|
|
8c415
Abstract: TBC558B 2NL4957 bc456b LOW-POWER SILICON PNP BC456C BF739 bf414 Motorola TO92 BF96
Text: RF LOW-POWER SILICON PNP Item Number Part Number V{BR CEO - 5 10 BC321B BC559P MPS6535 MPS6535M 2SA1031 8C859 BC859 BC859 S1806 S1806 ~~g~~;~ 15 -20 BC455A BC456A BC559BP BC455B BC456B TBC558B T8C559B TBC558 f~g~~~ 25 30 - 35 40 45 50 55 60 65 70 75 80 85
|
Original
|
PDF
|
OT-23
8c415
TBC558B
2NL4957
bc456b
LOW-POWER SILICON PNP
BC456C
BF739
bf414
Motorola TO92
BF96
|
SIEMENS SIMATIC NET PROFIBUS FC 6XV1 830-0EH10
Abstract: Siemens S7 400 4211BL01-0AA0 6ES7 414-2XK05-0AB0 414-3XM05-0AB0 6ES7 960-1AA04-5AA0 6es7 422 X204-2 421-1BL01-0AA0 siemens siplus
Text: 6 Siemens AG 2013 SIMATIC S7-400 6/2 Introduction 6/4 6/4 6/4 6/8 6/13 6/18 6/21 6/21 6/22 6/23 6/25 6/26 6/26 6/30 6/35 6/35 6/35 6/35 6/35 6/41 6/55 Central processing units Standard CPUs CPU 412 CPU 414 CPU 416 CPU 417 SIPLUS Standard CPUs SIPLUS CPU 412
|
Original
|
PDF
|
S7-400
S7-400H
IF-964
S7-400F/FH
SIEMENS SIMATIC NET PROFIBUS FC 6XV1 830-0EH10
Siemens S7 400
4211BL01-0AA0
6ES7 414-2XK05-0AB0
414-3XM05-0AB0
6ES7 960-1AA04-5AA0
6es7 422
X204-2
421-1BL01-0AA0
siemens siplus
|
SIEMENS 5SN
Abstract: 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola
Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
|
Original
|
PDF
|
O-126
O-126var
2S8549
2S8527
2S8528
2S81217
KSA931
2N3468
2S8733
SIEMENS 5SN
2N3406
UNITRODE DIODE 240
39 sot-89
2n3400
2N3483
2N3436 motorola
|
WS80a
Abstract: b25353 siemens SPC 4320 C3227* transistor b25353-k1118-k4 siemens matsushita kondensator B25834-K6106-K9 K4106 V245 datenbuch
Text: Inhaltsverzeichnis Anwendungen- und Bauformen-Übersicht Seite 5 9 Anwendungen Kondensator-Fragebogen 17 20 Allgemeine technische Angaben 23 Angaben zur Qualität 55 Gleichspannungs-Kondensatoren 63 Wechselspannungs-Kondensatoren 163 Kondensator-Befestigungen
|
Original
|
PDF
|
|
"PHOTOVOLTAIC CELL"
Abstract: No abstract text available
Text: SIEMENS BPY11P Silicon Photovoltaic Cell Dimensions in inches mm Active area .092 (2.35) .084(2.15) f .083(2.1 1 T 024 (0.6) 1.258 (32) 1.179(30) .118 (3.0)_ .059(1.5) .079 (2)' .00^8 ( 0 .2 ) Stands Soldered t t / t .191 (4.85) 183 (4.657 .026 (0.65) .020 (0.5)
|
OCR Scan
|
PDF
|
BPY11P
BPY11P
18-pln
fl535t
"PHOTOVOLTAIC CELL"
|
BPW32
Abstract: Siemens photodiode visible light bpw 32 3cj6 bpw photodiode S1027
Text: SIEMENS BPW 32 SILICON PHOTODIODE VERY LOW DARK CURRENT Package Dimensions in Inches mm Chip position Photosensitive area .039 x 039 ( t x 1) FEATURES * Silicon Planar Photodiode * Wide Temperature Range * Usage: Visible and Near Infrared Range (350 to 1100 nm)
|
OCR Scan
|
PDF
|
as3b32b
BPW32
Siemens photodiode visible light
bpw 32
3cj6
bpw photodiode
S1027
|
TRANSISTOR SMD CODE 339
Abstract: smd zener diode code n0
Text: SIEMENS PROFET BTS430K2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • Clamp of negative voltage at output 50 Vbb-V o u t Avalanche Clamp Short-circuit protection Vbb operation 4.5 . . 32 Current limitation
|
OCR Scan
|
PDF
|
BTS430K2
Q67060-S6200-A2
O-220
E3043
BTS430K2
Q67060-S6200-A3
TRANSISTOR SMD CODE 339
smd zener diode code n0
|
Untitled
Abstract: No abstract text available
Text: SIEMENS PRÜFET BTS 432 D2 Smart Highside Power Switch Features Product Summary • • • • • • • • • • • • 80 58 Vbb-Vo u t Avalanche Clamp Vbb operation 4.5 . . 42 -32 Vbb (reverse) 38 Ron 44 /L(SCp) 35 /L(SCr) 11 /L(ISO) Load dump and reverse battery protection1)
|
OCR Scan
|
PDF
|
systems21)
1999-Mar
|
|
|
Untitled
Abstract: No abstract text available
Text: SIEMENS PRÜFET BTS 432 E2 Smart Highside Power Switch Features Product Summary • • • • • • • • • • • • 80 58 Vbb-Vo u t Avalanche Clamp Vbb operation 4.5 . . 42 -32 Vbb (reverse) 38 Ron 44 /L(SCp) 35 /L(SCr) 11 /L(ISO) Load dump and reverse battery protection1)
|
OCR Scan
|
PDF
|
systems19)
1999-Mar
|
BUZ71
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power MOS Transistors *D S o n • • • • • BUZ 71L BUZ 71 AL = 50 V = 1 4 /1 3 A = 0 .1 /0 .1 2 Q N channel E nhancem ent mode Logic level A valanche-proof Package: T O -2 2 0 A B ') Type Ordering code BUZ 71 L C 67078-S 1 32 6-A 2
|
OCR Scan
|
PDF
|
67078-S
BUZ71
|
bc 103 transistor
Abstract: transistor BC 176 bc 201 transistor bc 1602 l transistor bc 103 TRANSISTOR BC 203 low noise transistor bc 179 transistor BC 172 transistor bc 102 bc202
Text: ESC D • ô235bDS 000412b 1 ■ S IE G ; PNP Silicon Transistors 04126 - 25C SIEMENS A K T IE N G E S E LLS C H A F ° BC201 “T * — BC 203 BC 201, BC 202, and BC 203 are epitaxial PNP silicon planar transistors of miniature design in U 32 plastic package. The types are marked by a green BC 201 , blue (BC 202), and
|
OCR Scan
|
PDF
|
0235bQS
000412b
-----25C
BC201
BC2011'
Q62702-C149
Q62702-C167
Q62702-C168
Q62702-C310
Q62702-C170
bc 103 transistor
transistor BC 176
bc 201 transistor
bc 1602 l
transistor bc 103
TRANSISTOR BC 203
low noise transistor bc 179
transistor BC 172
transistor bc 102
bc202
|
Untitled
Abstract: No abstract text available
Text: SIEMENS High Performance 32-Bit RISC Microprocessor SAB-R2000A In c lu d in g o n -c h ip m e m o r y m a n a g e m e n t a n d c a c h e c o n tro l w ith s u p p o r t fo r u p to t h r e e e x te r n a l c o p ro c e s s o rs in c lu d in g t h e S A B -R 2 0 1 0 A flo a tin g p o in t a c c e le r a to r .
|
OCR Scan
|
PDF
|
32-Bit
SAB-R2000A
MPT00B3B
|
1-1707-35611Fax
Abstract: No abstract text available
Text: Global PartnerChip for Systems on Silicon C5k Siemens AG Österreich Erdberger Lände 26 1030 Wien B + 43)-1-1707-35611 Fax (+43)-1 -1707-55973 C ^s) Siemens Ltd., Head Office 544 Church Street Richmond (Melbourne), Vic. 3121 8 ( 0 3 ) 4207111 02 30425
|
OCR Scan
|
PDF
|
B3414385
1-1707-35611Fax
|
CR033
Abstract: KMK0194-G KMK0201-3 KMK0202-B KMK0203-J KMKO169-1
Text: . B 32 529 MKT rl Technical data Climatic category in accordance with IEC 68-1 55/100/56 Lower category temperature r mjn - 5 5 °C Upper category temperature Tmax + 100 °C +125 °C for 1000 hand \/c = 0,5 • VR Damp heat test 56 days/40 °C/93 % relative humidity
|
OCR Scan
|
PDF
|
days/40
Vdc/32
Vdc/40
KMK0202-B
KMK0201-3
Vdc/63
Vdc/160
KMK0203-J
KMKO169-1
CR033
KMK0194-G
KMK0201-3
KMK0202-B
KMK0203-J
KMKO169-1
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 256 K x 16-Bit EDO-DRAM HYB 314175BJ-50/-55/-60 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh HYB 314175BJL-50/-55/-60 Preliminary Information • Low Power dissipation max. 450 mW active (-50 version) max. 432 mW active (-55 version)
|
OCR Scan
|
PDF
|
16-Bit
314175BJ-50/-55/-60
314175BJL-50/-55/-60
314175BJ/BJL-50/-55/-60
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 256k X 16-Bit EDO-DRAM HYB 514175BJ-50/-55/-60 Advanced information • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • Fast access and cycle time • • • RAS access time: 50 ns -50 version 55 ns (-55 version) 60 ns (-60 version)
|
OCR Scan
|
PDF
|
16-Bit
514175BJ-50/-55/-60
0235b05
514175B
L-50/-55/-60
P-SOJ-40-1
Q11113D
|
Untitled
Abstract: No abstract text available
Text: SIEM EN S 256Kx 16-Bit EDO-DRAM HYB 514175BJ -50/-55/-60 256K x 16-Bit EDO-DRAM Low power version with Self Refresh HYB 514175BJL-50/-55/-60 Advanced Information Low Power dissipation max. 1100 mW active (-50 version) max. 1045 mW active (-55 version) max. 935 mW active (-60 version)
|
OCR Scan
|
PDF
|
256Kx
16-Bit
514175BJ
514175BJL-50/-55/-60
J/BJL-50/-55/-60
16-DRAM
fl235bD5
514175B
|
M3555
Abstract: No abstract text available
Text: SIEMENS BUZ 100S-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Avalanche-rated • du/di rated Type ^DS BUZ 100S-4 55 V 8A ffDS on Package Ordering Code 0.02 Q. P-DSO-28 C67078-S. . . . -A. Maximum Ratings Parameter
|
OCR Scan
|
PDF
|
100S-4
VPS05123
100S-4
P-DSO-28
C67078-S.
M3555
|