BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615NV
OT-223
20iemens
B152-H6493-G5-X-7600
BUZ MOSFET
mosfet BUZ 326
BUP 312
BSS 130
BUP 304
bup 313
615n60
BUZ 840
SGU06N60
BUP 307D
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n48 rm6
Abstract: rm10 N67 DIN IEC 600 68-2-20 N48-400 RM6 N26 1000 Siemens matsushita b5 siemens rm8 T35 rm14 N67 RM8 N67 rm14 n41
Text: RM 3 Kern B65817 ● Ohne Mittelloch für Übertrageranwendungen Magnetische Formkenngrößen pro Satz Sl/A le Ae Amin Ve = 1,8 mm–1 = 15,1 mm = 8,4 mm2 = 6,4 mm2 = 128 mm3 Satzgewicht ca. 0,55 g ohne Luftspalt AL-Wert µe Bestellnummer VE N30 T38 nH 1600 + 40/– 30%
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B65817
B65817-J-Y30
B65817-J-Y38
B65818
B65887-P
FRAME4/u/intranet/dtp4/SMC-CD/FER/RM14
B65887-P-R30
B65887-P-R49
B65887-P-R67
B65887-P-R87
n48 rm6
rm10 N67
DIN IEC 600 68-2-20
N48-400
RM6 N26 1000
Siemens matsushita b5
siemens rm8 T35
rm14 N67
RM8 N67
rm14 n41
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schalenkern siemens k1
Abstract: 4900 SIEMENS Schalenkern B65651-D630-K26 Schalenkerne smd n48 STYROFLEX p14x8 siemens B65541-T400-A48 B65512A3001X17
Text: P-Kerne Schalenkerne Allgemeines Allgemeines S + M Components liefert eine breite Palette von Schalenkerngrößen, genannt P-Kerne (Pot Cores), darunter 8 Bauformen gemäß IEC 133 und DIN 41293. Die Kerne werden aus verschiedenen SIFERRIT-Werkstoffen gefertigt und können dementsprechend vielfältig und bis über 100 MHz
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B63399-B5
FRAME4/u/intranet/dtp4/SMC-CD/FER/P36x22
B65679-E2-X101
B65679-E3-X22
B65679-E2-X22
B65679-E1-X22
schalenkern siemens k1
4900 SIEMENS
Schalenkern
B65651-D630-K26
Schalenkerne
smd n48
STYROFLEX
p14x8 siemens
B65541-T400-A48
B65512A3001X17
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gaas fet marking a
Abstract: siemens gaas fet FET marking code Q62702-L90 cly5 cly 10 pd21
Text: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm
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Q62702-L90
615ms
gaas fet marking a
siemens gaas fet
FET marking code
Q62702-L90
cly5
cly 10
pd21
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N22 Schalenkern
Abstract: Siemens Ferrite N47 Siemens Ferrite B65541 EFD20 trafo ETD54 n62 R6KE Siemens Ferrite B64290 Siemens Ferrite n67 EC70 N27 siferrit n27
Text: Inhaltsverzeichnis Bauformen-Übersicht Bauformnummern-Verzeichnis SIFERRIT-Werkstoffe Seite 5 11 25 31 Allgemeines - Begriffsbestimmungen Anwendungs-, Verarbeitungshinweise Verpackung 103 121 163 Angaben zur Qualität Normen und Vorschriften 177 181 RM-Kerne
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PA 6/6 GF30 SIEMENS
Abstract: Siemens Ferrite B65541 ferrite ei core n27 TESLA mh 7400 CRASTIN SO 655 IEC 60205 Luvocom B64290-A38 etd59 siemens Siemens Ferrite B64290
Text: Contents Selector Guide Index of Part Numbers 5 11 26 SIFERRIT Materials 33 General – Definitions Application Notes Processing Notes 111 128 150 Packing Quality Considerations Standards and Specifications 165 174 177 RM Cores PM Cores EP Cores 181 274 290
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siemens ferrite n22 p14
Abstract: Siemens Ferrite B65541 EC35 Siemens ferrite core ETD54 n62 U93 QUANTA ARALDITE ay 105 EC70 N27 Siemens Ferrite N47 EC52 N27 FERRITES N67
Text: Contents Page 5 Selector Guide Index of Part Numbers 11 25 SIFERRIT Materials 31 General - Definitions Application and Processing Notes Packing 103 121 163 Quality Considerations Standards and Specifications 177 181 RM Cores 185 PM Cores 287 P Cores P Core Halves P Cores for Proximity Switches
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B41684
Abstract: SIEMENS SIKOREL 125 SIEMENS SIKOREL 105 Siemens B43306 C5478 B43682 siemens capacitor transistor C5478 b41590 b43507 B43507 siemens capacitor
Text: Contents Overview of Terminals and Quality Grades List of Type Numbers, Major Applications 5 8 10 General Technical Information 13 Quality Assurance 53 Capacitors with Screw Terminals 63 Capacitors with 4 Snap-In Terminals and Solder Pins 153 Snap-In Capacitors
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B65545B10
Abstract: B65545B9 N48-160 Siemens B65541 B65545-B10 B65541DR41 B65541-D-R33 MT 2800 N B65541-W-R67 B65541-D-R41
Text: P 14 x 8 Core and Accessories Individual parts Part no. Page Adjusting screwdriver for assembly only B63399 350 Matching handle B63399 350 Adjusting screw B65549 350 Yoke B65545 349 Core B65541 347 Coil former B65542 348 Insulating washer 1 B65542 348 Core
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B63399
B65549
B65545
B65541
B65542
B65545B10
B65545B9
N48-160
Siemens B65541
B65545-B10
B65541DR41
B65541-D-R33
MT 2800 N
B65541-W-R67
B65541-D-R41
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on semiconductor marking code dpack
Abstract: WE 73 A X3N60 MARKING CODE TBD SMD TRANSISTOR MARKING code TC TRANSISTOR SMD MARKING CODE ag P-TO251-3-1 P-TO252 SPDX3N60S5 SPUX3N60S5
Text: SPUX3N60S5 SPDX3N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best RDS on in D-Pack • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • dv/dt rated 1 2 3 • 150°C operating temperature G D S Type VDS
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SPUX3N60S5
SPDX3N60S5
X3N60S5
P-TO251-3-1
P-TO252
on semiconductor marking code dpack
WE 73 A
X3N60
MARKING CODE TBD
SMD TRANSISTOR MARKING code TC
TRANSISTOR SMD MARKING CODE ag
P-TO251-3-1
P-TO252
SPDX3N60S5
SPUX3N60S5
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siemens r10 core
Abstract: siemens ferrite n22 p14 CRASTIN CE 7931 Siemens Ferrite n27 RM Siemens Ferrite perminvar Siemens Ferrite n67 RM siemens siferrit al 400 siemens R10 K1 siferrit mt 500 b
Text: SIFERRIT Materials Based on IEC 60401, the data specified here are typical data for the material in question, which have been determined principally on the basis of ring cores. The purpose of such characteristic material data is to provide the user with improved means for
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siemens 350 98
Abstract: Q67000-S227
Text: Mini PROFET BSP 350 MiniPROFET • High-side switch • Short-circuit protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Reverse battery protection1 • Switching inductive load • Clamp of negative output voltage with inductive loads
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Q67000-S227
siemens 350 98
Q67000-S227
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Siemens Ferrite B65541
Abstract: TESLA mh 7400 mh 7400 tesla MDT 760 THYRISTOR ARALDITE AY 105 ARALDITE HY 956 EPF S20 Siemens Ferrite B64290 ETD54 n62 ARALDITE D AY 103
Text: Contents Selector Guide Index of Part Numbers 5 11 23 SIFERRIT Materials 29 General – Definitions Application Notes Processing Notes 111 129 151 Packing Quality Considerations Standards and Specifications 165 175 179 RM Cores 183 PM Cores 283 P Cores P Core Halves P Cores for Proximity Switches
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BUZ36
Abstract: BUZ,350 67078-S3117-A2 C67078-A1018-A2
Text: SIEMENS SIPMOS Power MOS Transistors VDS /D ^ D S o n BUZ 36 BUZ 350 = 200 V = 22 A = 0.12 Q • N channel • Enhancement mode • Avalanche-proof • Packages: TO-204 AE (TO-3), TO-218AA (TOP-3)1) Type Ordering code BUZ 36 C67078-A1018-A2 BUZ 350 C 67078-S3117-A2
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O-204
O-218AA
C67078-A1018-A2
67078-S3117-A2
SIL00540
BUZ36
BUZ,350
67078-S3117-A2
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Untitled
Abstract: No abstract text available
Text: BPX 63 SIEMENS Very Low Dark Current Silicon Photodiode FEATURES • Especially suitable for applications from 350 nm to T100 nm • Low reverse current typ. 5 pA • TO-1B, base plate, transparent epoxy resin lens APPLICATION • Exposure meters, automatic exposure
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BPX63
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BST-T68S346
Abstract: BSTT66146 BSTT66166 BStT68S346 BSTT66133 SIEMENS BSTT66166 BSTT68H280 BSTT68L213 bstt68L BSTT66
Text: SIEMENS AKTIENGESELLSCHAF flflD D ñSBStiQS QG1S157 1 • SIEG 7^ Z S " - 'Z'' Phase-control thyristors TVpo ^DRM V BStT65 80 1 200 BStT65 90 1 350 BStT65110 1 650 BStT66133 2000 BStT66146 2 200 BStT66166 2 500 B StT68H 253 3 800 B StT68H 266 4 000 B StT68H 280
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OCR Scan
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fl235L
G01S1S7
BStT65
BStT65110
BStT66133
BStT66146
BStT66166
BStT68H253
BStT68H266
BST-T68S346
BStT68S346
SIEMENS BSTT66166
BSTT68H280
BSTT68L213
bstt68L
BSTT66
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SH100G
Abstract: TDK tda
Text: SIEMENS CDR 3300-00 High-Speed Clock and Data Recovery Bipolar 1C Preliminary Data Features • • • • • • Data rate from 2.5 to 3.3 Gbit/s Supply range fro m -4 .0 V t o - 5 . 0 V Supply current 350 mA typ. Input sensitivity 20 mVpp differential BER = 10“ 12
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OCR Scan
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SH100G-based
19Q8-Dfi-1Fi
STM-16
P-TQFP-100-4
SH100G
TDK tda
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SiEMENS EC 350 99
Abstract: SiEMENS PM 350 98 SIEMENS gas siemens 350 98 arrester siemens 350 SiEMENS EC 350 98 0 SIEMENS surge arrester dc spark-over voltage siemens SiEMENS EC 350 98 Q69-X81
Text: SIEMENS Gas Filled Surge Arrester EC350X Ordering code Q69-X81 DC spark-over voltage 1 2) 350 V ± 15% Impulse spark-over @ 1kV/ps for 99% of values measured < 900 V Insulation resistance @ 100 V > 10 G a Impulse discharge current wave 8/20 ps) 5 kA Alternating discharge current (50 Hz, 1s)
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OCR Scan
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EC350X
Q69-X81
EC350X
SiEMENS EC 350 99
SiEMENS PM 350 98
SIEMENS gas
siemens 350 98
arrester siemens 350
SiEMENS EC 350 98 0
SIEMENS surge arrester
dc spark-over voltage siemens
SiEMENS EC 350 98
Q69-X81
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Untitled
Abstract: No abstract text available
Text: SIEMENS High-Speed Clock and Data Recovery C D R 3 3 0 0 -0 0 Bipolar IC Preliminary Data Features • • • • • • Data rate from 2.5 to 3.3 Gbit/s Supply range from - 4.0 V to - 5.0 V Supply current 350 mA typ. Input sensitivity 20 mVpp differential BER = 10“ 12
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OCR Scan
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P-TQFP-100-4
STM-16
P-TQFP-100-4
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PDF
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Untitled
Abstract: No abstract text available
Text: LH1298 SIEMENS FE A T U R E S HIGH VOLTAGE, SOLID STATE RELAY OPTOCOUPLER Package Dim ensions in Inches mm • N o rm ally C lo sed , S in g le Pole S in g le T h ro w O p eratio n • C o n tro l 350 VAC o r DC V oltage • S w itch 100 m A Loads • LED C o n tro l C u rren t, 1.5 m A
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OCR Scan
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LH1298
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bf987
Abstract: No abstract text available
Text: SIEMENS Silicon N Channel MOSFET Triode BF 987 • For high-frequency stages up to 300 MHz, preferably in FM applications • High overload capability Type Marking Ordering Code BF 987 - Q62702-F35 Pin Configuration 1 2 3 D S Package1 G TO-92 Maximum Ratings
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OCR Scan
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Q62702-F35
fl235
bf987
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PDF
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bss138
Abstract: BSS98 siemens 350 98 Q62702-S566 Q62702-S558
Text: S I E M E N S SIPMOS " Small-Signal Transistors BSS 98 BSS 138 VDS = 50 V lD = 0 .3 /0 .2 2 A ^DS on = 3-5 O • N channel • Enhancement mode • Packages: TO-92, SOT-231) Type Marking Ordering code for version on bulk Ordering code for version in tap e2)
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OCR Scan
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OT-231)
Q62702-S464
Q62702-S558
62702-S517
Q62702-S566
bss138
BSS98
siemens 350 98
Q62702-S566
Q62702-S558
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siemens gaas fet
Abstract: gaas fet marking J
Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163
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OCR Scan
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S0S163
Q62702-L90
615ms
i77mS-
417ps
siemens gaas fet
gaas fet marking J
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SPUX3N60S5
Abstract: on semiconductor marking code dpack VPT09050
Text: SIEM EN S SPUX3N60S5 SPDX3N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best ffos 0n> in D-Pack • N-Channel • Enhancement mode VPT09D51 VPT09050 • Ultra low gate charge • Avalanche rated • d v/d t rated 1 2 3 • 150°C operating temperature
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OCR Scan
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SPUX3N60S5
SPDX3N60S5
SPDX3N60S5
VPT09D51
VPT09050
X3N60S5
P-T0251-3-1
P-T0252
on semiconductor marking code dpack
VPT09050
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