RM10 ferrite siemens
Abstract: siemens rm10 core corrugated cardboard ur42
Text: Packing Survey of packing modes Ferrites RM cores PM cores P cores P core halves TT/PR cores EP cores E cores ELP cores ER cores ETD cores EC cores EFD cores EV cores DE cores U and I cores Ring cores Type RM 3 to RM 10 RM 12, RM 14 PM50/39 to PM114/93 all P cores
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PM50/39
PM114/93
RM10 ferrite siemens
siemens rm10 core
corrugated cardboard
ur42
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C945 p 331
Abstract: B1-C90/20 TRANSISTOR K1006 siemens MKL T60405-R6131-X037 t60405-s4615-x027 c945 p 331 transistor transistor C5478 siemens PTC C860 T60405-A4220-X060
Text: Ordering Information Subject Index 5 11 A Chokes and Transformers SMD Transformers Ferrites and Accessories 15 29 37 B Thick-Film Chip Resistors NTC Thermistors PTC Thermistors Varistors Surge Arresters 121 127 143 155 167 C Ceramic Capacitors Film Capacitors
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A0297
C945 p 331
B1-C90/20
TRANSISTOR K1006
siemens MKL
T60405-R6131-X037
t60405-s4615-x027
c945 p 331 transistor
transistor C5478
siemens PTC C860
T60405-A4220-X060
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BS4 siemens
Abstract: BC 241 d0415 bc167 siemens bc169c siemens BC167 BC169B BC169 siemens Pm 90 87 168c
Text: S IE D i • Ö235b05 OGMlSlb ‘î l S « S I E G SIEMENS AKTIEN6ESELLSCHAF NPN Silicon AF Transistors BC 167 . BC 169 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 257, BC 258, BC 259 PNP Type BC BC BC
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S35bDS
Q62702-C706
Q62702-C74
Q62702-C75
Q62702-C707
Q62702-C76
Q62702-C77
Q62702-C78
Q62702-C708
Q62702-C79
BS4 siemens
BC 241
d0415
bc167 siemens
bc169c siemens
BC167
BC169B
BC169
siemens Pm 90 87
168c
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sot-23 MARKING CODE ZA
Abstract: BFQ29P
Text: NPN Silicon RF Transistor BFQ29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. E CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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BFQ29P
62702-F
sot-23 MARKING CODE ZA
BFQ29P
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Untitled
Abstract: No abstract text available
Text: 32E D • 623b320 QDlblSl T « S I P NPN Silicon RF Transistor o , .t-. BFQ 29P SIEMENS/ SPCLi SEMICONDS _ • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. £ CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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623b320
BFQ29P
62702-F
OT-23
/o-20m
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Untitled
Abstract: No abstract text available
Text: 3SE D • flS3t.33Q 0 0 1 7 0 1 ^ S m S I P NPN Silicon RF Transistor T "2 l-f 7 _ SIE M E N S / SPCL-. SEMICONDS _ BFR • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. S CECC-type available: CECC 50002/256.
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BFR93A
OT-23
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siemens s450
Abstract: No abstract text available
Text: NPN Silicon RF Transistor BFR 93A • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. E CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OT-23
siemens s450
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BFQ 58
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F659
OT-23
fi23SbDS
BFQ 58
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BFT65
Abstract: transistor bft65 f451 61 SIEMENS 25813
Text: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration
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BFT65
BFT65
Q62702-F451
fl235bDS
transistor bft65
f451
61 SIEMENS
25813
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Untitled
Abstract: No abstract text available
Text: 32E D • 023b3SQ Q017027 H H S I P NPN Silicon RF Transistor —» 0 1 . 1 7 BFR93P SIEMENS/ SPCLn SEMICONDS ' ' _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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023b3SQ
Q017027
BFR93P
OT-23
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1051
OT-23
a23SbQS
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sot-23 MARKING CODE ZA
Abstract: sot-23 CODE 41 bfs17p mc
Text: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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BFS17P
OT-23
sot-23 MARKING CODE ZA
sot-23 CODE 41
bfs17p mc
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N48 630
Abstract: N48 250 B65669-E6-X22 B65531D160A48 B65611-N250-G48 B65661-T400-A48 Siemens N48 Siemens B65541 siemens N26 core P 18 x 11 B65532-B-T2
Text: p Cores Example o f an assembly set J Adjusting screw drivef for assembly only >v Adjusting screw Yoke Core Coil former Insulating washer 1 Core Threaded sleeve (glued-in) Insulating washer 2 Terminal carrier Qidmonc Matsushita Components 77 P Cores M ounting dim ensions of the assem bly set (mm)
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B65612-6-T1
B65612-B-T2
B65612-A5000
B65615-B1
B65679-E2-X101
N48 630
N48 250
B65669-E6-X22
B65531D160A48
B65611-N250-G48
B65661-T400-A48
Siemens N48
Siemens B65541
siemens N26 core P 18 x 11
B65532-B-T2
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P32-A
Abstract: BUZ 140 L C67078-S1331-A2
Text: SIEM ENS SIPMOS Power Transistors • • • BUZ 12 BUZ 12 A N channel Enhancement mode Avalanche-rated / Type Id To •^DS (on) Package 1> Ordering Code 0.028 TO-220 AB C67078-S1331-A2 TO-220 AB C67078-S1331 -A3 Symbol Values BUZ 12 50 V 42 A 65 °C
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O-220
C67078-S1331-A2
C67078-S1331
SIL02907
SIL02905
12/BUZ
SIL02908
SIL02909
P32-A
BUZ 140 L
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Untitled
Abstract: No abstract text available
Text: Snap-In Capacitors LL Grade B 41 503 B 43 503 For professional switch-mode power supplies Operation at temperatures up to 105 °C Construction • • • • • • • Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board
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KAL0274-A
00742T2
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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siemens KS 630 S
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistors BUZ 12 BUZ 12 A • N channel • Enhancement mode • Avalanche-rated Type Vos I d To ^ D S on Package1) Ordering Code BUZ 12 50 V 42 A 65 *C 0.028 Û TO-220 AB C67078-S1331-A2 BUZ 12 A 50 V 42 A 44 'C 0.035 Q TO-220 AB
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O-220
C67078-S1331-A2
C67078-S1331
siemens KS 630 S
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MMIC "SOT 89" marking
Abstract: marking HLEH Siemens MMIC MMIC marking code GA
Text: SIEM EN S CF 750 GaAs MMIC Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V * Ion-implanted planar structure
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VPS05178
Q62702-F1391
MMIC "SOT 89" marking
marking HLEH
Siemens MMIC
MMIC marking code GA
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MMIC marking CODE cf
Abstract: ma com 4 pin mmic A7560
Text: SIEMENS CF 750 GaAs MMIC D a t a s h e e t * Biased Dual Gate G a A s FET * For frequencies from 400 M Hz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V
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VPS05178
Q62702-F1391
Rn/50Q
MMIC marking CODE cf
ma com 4 pin mmic
A7560
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BFQ70
Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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VCE051S1
Q62702-F774
fi23SbOS
0Gb7117
BFQ70
zo 107 NA
BFq 98
transistor zo 109
zo 107 MA
ST2C
VCE051S1
bfq 85
zo 107
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ericsson 10007
Abstract: c 2575 gs
Text: ERICSSON ^ PTF 10007 35 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The PTF 10007 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 35 w atts minimum output power. Nitride surface
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ate-Sou05
ericsson 10007
c 2575 gs
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Untitled
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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BFQ70
Q62702-F774
S23SbOS
0Db7117
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Transistor BFR
Abstract: Transistor BFR 191 Transistor BFR 39 BFR 67
Text: BFR 35AP NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non saturated switches at collector currents from 0.5 to 20 mA. C ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type M arking Ordering code
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OT-23
Transistor BFR
Transistor BFR 191
Transistor BFR 39
BFR 67
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Untitled
Abstract: No abstract text available
Text: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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23b320
BFR35AP
62702-F
OT-23
T-31-17
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