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    SIEMENS BFP420 Search Results

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    diode t25 4 G9

    Abstract: diode t25 4 g8 diode t25 4 c5 diode t25 4 g0 TRANSISTOR G13 diode t25 4 c4 BFP420 diode t25 4 c6 filter saw Siemens matsua siemens matsushita saw 45
    Text: Siemens Matsushita Components Application Note Using the B4204 PCN 2in1 Filter with a LNA based on the BFP420 RF Transistor Horst Germann S+M OFW E MF October 30, 1998 Munich, Germany Reg.-No.: MFAPP03A Siemens Matsushita Components SAW Components Application: Using B4204 with a LNA based on BFP420


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    B4204 BFP420 MFAPP03A BFP420 L585C) diode t25 4 G9 diode t25 4 g8 diode t25 4 c5 diode t25 4 g0 TRANSISTOR G13 diode t25 4 c4 diode t25 4 c6 filter saw Siemens matsua siemens matsushita saw 45 PDF

    BFP420 application notes 900MHz

    Abstract: BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400
    Text: Application Note No. 018 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 This application note describes a low noise amplifier at 900MHz using SIEMENS SIEGET®25 BFP420. The design emphasis has been on achieving a


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    BFP420 900MHz BFP420. 10dBm 100pF BFP420 application notes 900MHz BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400 PDF

    BCR400

    Abstract: BFP420 BFP420 application note SIEMENS BFP420
    Text: Application Note No. 017 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier with good IP3outperformance at 1.9 GHz using BFP420 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET25 BFP420. The design emphasis has been on achieving high output


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    BFP420 BFP420. 23dBm 100pF BCR400 BFP420 BFP420 application note SIEMENS BFP420 PDF

    transistor BC 245

    Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
    Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the


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    PDF

    EM 231 WIRING DIAGRAM

    Abstract: em 223 cn TRANSISTOR BO 344 siemens rs 1064
    Text: SIEMENS NPN Silicon RF Transistor BFP 420 Features • For H igh G ain Low N oise A m plifiers • • For O scillators up to 9 GHz N oise Figure F = 1.05 dB at 1.8 G H z O utstand in g G ms = 20 dB at 1.8 G H z • • • T ransition Frequency fT > 20 GHz


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    62702-F1591 EM 231 WIRING DIAGRAM em 223 cn TRANSISTOR BO 344 siemens rs 1064 PDF

    A01 MMIC

    Abstract: siemens inductor SIEMENS CAPACITOR C5 mmic a01 "Downconverting to 116 MHz" Siemens capacitor 0402 CAPACITOR SIEMENS BFP420 SIEMENS filter resistor 470ohm
    Text: Application Note No. 054 Discrete & RF Semiconductors 869 - 894 MHz Receiver Front End Downconverting to 116 MHz Receiver Front End for 869 MHz to 894 MHz downconverting to 116 MHz including a Low Noise Amplifier with Gainstep and a Mixer with LO Buffer. The LNA stage, a BFP420, can be switched to high and low gain mode by changing the level


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    BFP420, CMY91 BFP183W 10dBm A01 MMIC siemens inductor SIEMENS CAPACITOR C5 mmic a01 "Downconverting to 116 MHz" Siemens capacitor 0402 CAPACITOR SIEMENS BFP420 SIEMENS filter resistor 470ohm PDF

    C547* transistor

    Abstract: BFP420 R3150 A04 RF amplifier RF TRANSISTOR BFP420 application note SIEMENS BFP420 BCR400W SOT343 C5
    Text: Application Note No. 015 Discrete & RF Semiconductors K. Brenndörfer Low-Noise-Amplifier optimised for minimum Noise Figure at 1.9 GHz using BFP420 This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at


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    BFP420 BFP420. 10dBm C547* transistor BFP420 R3150 A04 RF amplifier RF TRANSISTOR BFP420 application note SIEMENS BFP420 BCR400W SOT343 C5 PDF

    C547* transistor

    Abstract: BFP420 application note transistor C4 016 RF TRANSISTOR BCR400W SOT343 C5 C547u BFP420 C322pF transistor bfp420
    Text: Application Note No. 016 Discrete & RF Semiconductors K. Brenndörfer Low-Noise-Amplifier optimized for input and output return loss at 1.9 GHz using BFP420 This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at


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    BFP420 BFP420. C547* transistor BFP420 application note transistor C4 016 RF TRANSISTOR BCR400W SOT343 C5 C547u BFP420 C322pF transistor bfp420 PDF

    Siemens DIODE E 1240

    Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
    Text: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability


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    BFP420 25-Line Transistor25 Q62702-F1591 OT343 Siemens DIODE E 1240 AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor PDF

    AMS 3630

    Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability


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    BFP420 25-Line OT343 Q62702-F1591 AMS 3630 a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420 PDF

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


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    F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


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    RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    gsm mobile jammer

    Abstract: Passive GPS ceramic patch antenna SIEMENS saw filter jammer gsm SIEMENS saw filter f2 advantages of mobile signal jammer circuit mobile jammer circuit design gsm SIEMENS epcos Gps circuit diagram interfacing gps gsm
    Text: Application Note SAW-Components GPS low noise front-end amplifier with SAW filter B3520 App. Note #16 GPS is rapidly growing in Automotive and in consumer market as well. GPS navigation for cars and motor trucks becomes more and more standard. A GPS frontend, consisting of an amplifier - filter combination is discussed. System comparison


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    B3520 D-81617 gsm mobile jammer Passive GPS ceramic patch antenna SIEMENS saw filter jammer gsm SIEMENS saw filter f2 advantages of mobile signal jammer circuit mobile jammer circuit design gsm SIEMENS epcos Gps circuit diagram interfacing gps gsm PDF

    BFP420 application notes 900MHz

    Abstract: SCT598-Package BFP420 application notes BFP420 BGC420 Q62702-G0092 500R 134fF IC LP7 3770E-01
    Text: BGC420 Self-Biased BFP420 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe


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    BGC420 BFP420 SCT598-Package VPW05982 Q62702-G0092 SCT598 BGC420 BFP420 application notes 900MHz SCT598-Package BFP420 application notes BFP420 Q62702-G0092 500R 134fF IC LP7 3770E-01 PDF

    BFP420

    Abstract: BC857B sot23 smd transistor infineon BFP420 application note AG SMD TRANSISTOR siemens transistor t2 BC857B sieget25 SIEGET-25 SIEMENS BFP420
    Text: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 0 1 S I E G E T 2 5 Lo w N o i s e A m p l i f i e r w i t h B F P 4 2 0 T r a n s i s t o r a t 2 .4 G H z R F & P r o t e c ti o n D e v i c e s Edition 2007-01-08


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    F0805 BFP420 OT343 BC857B BC857B sot23 smd transistor infineon BFP420 application note AG SMD TRANSISTOR siemens transistor t2 sieget25 SIEGET-25 SIEMENS BFP420 PDF

    C547* transistor

    Abstract: BCR400W BFP420
    Text: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 1 6 L o w - N o i s e- A m p l i f i e r o p t i m i z e d f o r i n p ut a n d o u t p u t r e tu r n l os s a t 1 .9 G H z u s i n g B F P 4 2 0 R F & P r o t e c ti o n D e v i c e s


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    OT343 BCR400W, C547* transistor BCR400W BFP420 PDF

    AN015

    Abstract: BCR400W BFP420
    Text: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 1 5 L o w - N o i s e- A m p l i f i e r o p t i m i s e d fo r m i n i m u m N o i s e F i g u r e a t 1 . 9 G H z u s i ng B F P 42 0 R F & P r o t e c ti o n D e v i c e s


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    OT343 BCR400W, AN015 BCR400W BFP420 PDF

    BFP420

    Abstract: AN017 BCR400W BFP420 application note
    Text: A pp li c a t i o n N o t e , R e v . 2 . 0 , O c t . 2 00 6 A p p li c a t i o n N o t e N o . 0 1 7 A Lo w - N o i s e - A m p l i f i e r w i t h g o o d I P 3o u t p e r fo r m a n c e a t 1 . 9 G H z u s i n g B F P 42 0 R F & P r o t e c ti o n D e v i c e s


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    BFP420 BFP420 AN017 BCR400W BFP420 application note PDF

    BFP420

    Abstract: BFP420 application note BFP420 application notes AN018 BCR400 bfp420 s11
    Text: A pp li c a t i o n N o t e , R e v . 2 . 0 , O c t . 2 00 6 A p p li c a t i o n N o t e N o . 0 1 8 A L ow - N o i s e - A m pl i f i e r a t 9 0 0 M H z u s i n g S I E G E T B FP 4 20 R F & P r o t e c ti o n D e v i c e s Edition 2006-10-27 Published by


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    BFP420 BFP420 BFP420 application note BFP420 application notes AN018 BCR400 bfp420 s11 PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B PDF

    UCVE8X805A

    Abstract: BFP420E6327 abstract for battery level indicator using OPAMP dc cdi schematic diagram URAE8X630B ALPS Bluetooth abstract fsk demodulation using pll cdi schematics SAFU110.6MSA40T URAE8
    Text: National Semiconductor AN-1162 Wireless Communication January 2000 TABLE OF CONTENTS 1.0 ABSTRACT 2.0 INTRODUCTION 3.0 STANDARDS 4.0 TRANSCEIVER DESIGN 4.1 SYNTHESIZER 4.1.1 Lock Time 4.2 TRANSMITTER 4.3 RECEIVER 4.3.1 Demodulation Parallel Tank 4.3.2 Performance


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    AN-1162 LMX3162 UCVE8X805A BFP420E6327 abstract for battery level indicator using OPAMP dc cdi schematic diagram URAE8X630B ALPS Bluetooth abstract fsk demodulation using pll cdi schematics SAFU110.6MSA40T URAE8 PDF

    MQE9

    Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
    Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


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    HD155121F ADE-207-265A HD155121F 48-pin MQE9 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors PDF

    l3404

    Abstract: BFP420 application notes urae8x630a PFC619 URAE8 BFP420 LMX3162 MK capacitor siemens Bandpass filter SAW 2.4 GHz 50 Ohm SAFU110.6MSA40T
    Text: N LMX3162 Evaluation Notes National Semiconductor, Inc. Wireless Communications Group 4/6/99 Rev. B N LMX3162 Evaluation Instructions Table of Contents General Description . 3 Quick Start. 4


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    LMX3162 LMX3162 LP2980 DFC22R44P084LHA SAFU110 6MSA40T l3404 BFP420 application notes urae8x630a PFC619 URAE8 BFP420 MK capacitor siemens Bandpass filter SAW 2.4 GHz 50 Ohm SAFU110.6MSA40T PDF

    Hitachi DSA002743

    Abstract: Nippon capacitors
    Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


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    HD155121F ADE-207-265 HD155121F 48-pin Hitachi DSA002743 Nippon capacitors PDF