2kW flyback PFC
Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
Text: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg
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D-90439
D-70499
D-81679
B-1060
N60S5
O-220
OT-223
2kW flyback PFC
transistor SMD DK -RN
SMPS flyback 2kW
UPS SIEMENS
UMAX 450W SMPS
smps 450W
2kw mosfet
PFC 5kw
P-CHANNEL 25A TO-247 POWER MOSFET
siemens soft starter
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Untitled
Abstract: No abstract text available
Text: Siemens AG 2014 Level measurement Continuous level measurement — Guided wave radar transmitters SITRANS LG series • Overview ■ Benefits • • • • • • • • • 4 • The Siemens SITRANS LG series are guided wave radar transmitters for level, level/interface, and volume measurement of
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K/KPC240MM
Abstract: DCB45 K/10P10C female
Text: SHF Communication Technologies AG Wilhelm-von-Siemens-Str. 23D • 12277 Berlin • Germany Phone +49 30 / 772 05 10 • Fax +49 30 / 753 10 78 E-Mail: sales@shf.de • Web: http://www.shf.de Product Overview Passive RF & Microwave Components Passive Devices
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CA292
CA240
119SMPM
CA185
CA240FM0125
K/KPC240MM
DCB45
K/10P10C female
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MSC 5010
Abstract: Microwave Semiconductors MIL883 leak
Text: SIEMENS 1 HiRel Discrete and Microwave Semiconductors Preliminary Remarks This paragraph gives an overview on the HiRel Discrete and Microwave Semiconductors available from Siemens. For detailed descriptions, screening procedures and quality specifications as well as full data sheets, please refer to our “HiRel Discrete and
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BB409
Abstract: BF960 BF966 BF963 GP 004 DIODE BB505G LT 5202 diode
Text: SIEMENS/ SPCLt SEHXCONJS 7DC S B 8S3t320 0013823 8 m Discrete Semiconductors For High Frequency Applications t - o i- c / O Siemens is a major supplier of high frequency discrete semiconductors. An extensive line of tuner and band switch diodes, RF, Microwave and Dual
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8S3t320
/200CM
8-121A
BB409
BF960
BF966
BF963
GP 004 DIODE
BB505G
LT 5202 diode
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24 GHz Microwave Doppler Radar Speed Sensor
Abstract: microwave motion sensors microwave RADAR motion sensors motion sensor doppler 24 GHz Microwave Sensor motion DOPPLER siemens speed sensor speed sensors Siemens motion sensor based on doppler effect automatic door opening sensor
Text: SIEMENS 3 Motion Sensors 3.1 Functional Description Motion Sensors The KMY modules are microwave radar motion sensors based on the Doppler effect. A high frequency transistor is used as an oscillator. Depending on the operating frequency of 9.35 KMY 10 or 2.45 (KMY 24) GHz a GaAs-FET- or SIEGET (Siemens grounded
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SMD TRANSISTOR MARKING 76
Abstract: smd transistor marking 54 transistor RF 98 smd RK 73 SMD smd marking codes list 722 smd transistor SMD TRANSISTOR MARKING 93 75 smd rf transistor marking SMD TRANSISTOR MARKING 86 smd transistor marking af
Text: SIEMENS Inhaltsverzeichnis Table of Contents Selection Guide. 13 RF-Transistors and MMICs.
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KTY temperature sensor
Abstract: EHA07245 KTY 15 KTY 14
Text: SIEMENS 5 Silicon Temperature Sensors 5.1 Introduction Silicon Temperature Sensors The KTY temperature sensor developed by Siemens is based on the principle of the Spreading Resistance. The expression “Spreading Resistance” derives from a method, called the “one-pointmethod” figure 18 used to measure the specific resistivity of semiconductor wafers.
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BXY 36 300
Abstract: cfy66 GHZ micro-X Package BFY19 CFY67-08 107 micro-x BFY183 BFY420 Microwave Semiconductors BFY193 Microx
Text: SIEMENS 4 HiRel Discrete and Microwave Semiconductors Selection Guides for HiRel Discrete Semiconductors The Selection Guide provides main maximum ratings and electrical key parameters typical data . 4.1 HiRel Silicon Diodes Low Barrier Silicon Schottky Diodes
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BAT15-013/014
BAT15-033/034
BAT15-043/044
BAT15-063/064
BAT15-073/074
BAT15-093/094
BAT15-103/104
MWP-25
MWP-35
BXY 36 300
cfy66
GHZ micro-X Package
BFY19
CFY67-08
107 micro-x
BFY183
BFY420
Microwave Semiconductors
BFY193 Microx
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Q62702-A118
Abstract: No abstract text available
Text: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • qualified • ESA/SCC Detail Spec. No.: 5106/014
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de/semiconductor/products/35/35
de/semiconductor/products/35/353
Q62702-A118
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KTY 15-6
Abstract: KPY 10 KPY 31 KTY 10-8 microwave motion sensor microwave motion sensors KTY 16-6 Siemens KTY KTY 120
Text: Inhaltsverzeichnis Table of Contents SIEMENS Inhalt Table of Contents Seite Page Teil I: Parti: Si Temperature Sensors. 7 Allgemeine Qualitätsangaben. 9 Technische Grundlagen. 13
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40-MA/R.
KTY 15-6
KPY 10
KPY 31
KTY 10-8
microwave motion sensor
microwave motion sensors
KTY 16-6
Siemens KTY
KTY 120
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NF 034
Abstract: BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT14-073 BAT14-093 BAT14-103 BAT14-123 Q62702D1345
Text: SIEMENS BAT 14 HiRel Silicon Schottky Diode Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • ^ esa qualified • ESA/SCC Detail Spec. No.: 5106/014
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BAT14-013
de/semiconductor/products/35/353
NF 034
BAT14-033
BAT14-043
BAT14-063
BAT14-073
BAT14-093
BAT14-103
BAT14-123
Q62702D1345
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Untitled
Abstract: No abstract text available
Text: SIEMENS BXY 44P HiRel Silicon PIN Diode Features • HiRel Discrete and Microwave Semiconductor • Current controlled RF resistor for RF attenuators and switches • High reverse voltage • Matched diode - pair • Hermetically sealed microwave package @sa qualified
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44P-FP
de/semiconductor/products/35/35
de/semiconductor/products/35/353
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • C qualified • ESA/SCC Detail Spec. No.: 5106/014
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel Silicon Schottky Diode BAS 70 Features • • • • • • • • HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Hermetically sealed microwave package
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BAS70-T1
Q62702A1173
Q62702A674
Q62702A674
BAS70-T1
BAS70
de/semiconductor/products/35/35
de/semiconductor/products/35/353
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Untitled
Abstract: No abstract text available
Text: SIEMENS CG Y 52 GaAs MM IC Datasheet * Two stages monolithic microwave IC MMICAmplifier * All gold metallisation *Chip fully passivated * Operating voltage range: 2.7 to 5 V *50 Q. input / output 3 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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VS005554
CGY52
Q68000-A8615
Channel-sold009
CGY52,
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N4 MMIC
Abstract: ud marking marking n4 mmic CGY59 Q68000-A8887 marking code 22nh sot23 473 coilcraft d
Text: SIEMENS Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) * Easily matchable to 50i2 * No bias coil needed * Single positive supply voltage "Low noise figure and high gain
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950MHz
85GHz
Q68000-A8887
A23SbDS
200MHz
CGY59t
N4 MMIC
ud marking
marking n4 mmic
CGY59
marking code 22nh sot23
473 coilcraft d
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B37940-K5220-J62
Abstract: siemens rs 1016 B37940K5220J62 B54102 mmic-amplifier CGY120 B54102-A1471-J60 B37490-K5120-J62 0805CS-220XMBC MMIC marking CODE c4
Text: SIEMENS GaAs MMIC CGY 120 Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB * 50Q input and output matched * Low power consumption 'Operating voltage range: 2.7 to 6 V
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Q62702-G44
Vcon55
B37940-K5220-J62
siemens rs 1016
B37940K5220J62
B54102
mmic-amplifier
CGY120
B54102-A1471-J60
B37490-K5120-J62
0805CS-220XMBC
MMIC marking CODE c4
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BAT14T1
Abstract: il 074 14013 BAT14-014ES bat14
Text: SIEMENS HiRel Silicon Schottky Diode BAT 14 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • C -esa qualified • ESA/SCC Detail Spec. No.: 5106/014
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de/semiconductor/products/35/35
de/semiconductor/products/35/353
BAT14T1
il 074
14013
BAT14-014ES
bat14
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Siemens Microwave
Abstract: marking code jf1
Text: SIEMENS HiRel Silicon Schottky Diode BAS 40 Features • • • • • • • HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Hermetically sealed microwave package
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BAS40-T1
Q62702A1176
BAS40-T1
BAS40
de/semiconductor/products/35/35
de/semiconductor/products/35/353
Siemens Microwave
marking code jf1
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"Marking k2" mmic
Abstract: TLX-9-0150-CH
Text: SIEMENS Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) * Easily matchable to 50Q * No bias coil needed * Single positive supply voltage * Low noise figure and high gain
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950MHz
85GHz
Q68000-A8887
200MHz
"Marking k2" mmic
TLX-9-0150-CH
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x16 3 marking -ddr -sdram -rimm -sram -flash -m
Abstract: CGY52 Q68000-A8615 mmic-amplifier 7CH150
Text: SIEMENS GaAs MM IC CGY 52 Datasheet * Two stages monolithic microwave 1C MMICAmplifier * All gold metallisation *C h ip fully passivated •O perating voltage range: 2.7 to 5 V *5 0 Q input / output ESD: Electrostatic discharge sensitive device, observe handling precautions!
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CGY52
Q68000-A8615
CGY52,
E3Sb05
x16 3 marking -ddr -sdram -rimm -sram -flash -m
mmic-amplifier
7CH150
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel Silicon PIN Diode BXY43 Features • HiRel Discrete and Microwave Semiconductor • Current controlled RF resistor for RF attenuators and switches • High reverse voltage • Hermetically sealed microwave package esa qualified • ESA/SCC Detail Spec. No.: 5513/030
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BXY43
BXY43-T1
BXY43-P1
43-FP
Q62702X151
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a3150 ic
Abstract: MMIC marking CODE 74 marking 478 mmic B82412-A3150-M MMIC marking code 132 a3150 34B DBM CGY60 Q62702G-39 Y 60
Text: SIEMENS GaAs MMIC CGY 60 Datasheet * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) Matched to 50C2 for 1.7 to 2GHz * Easily matchable to 50Q for lower frequencies (i.e. GSM-application)
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85GHz)
Q62702G-39
023SbOS
a3150 ic
MMIC marking CODE 74
marking 478 mmic
B82412-A3150-M
MMIC marking code 132
a3150
34B DBM
CGY60
Q62702G-39
Y 60
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