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    SIEMENS MOSFET BSM 50 Search Results

    SIEMENS MOSFET BSM 50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    SIEMENS MOSFET BSM 50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FR 151 diode

    Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
    Text: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)


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    PDF C67076-A1050-A2 C67076-A1056-A2 FR 151 diode HJC.1 siemens mosfet BSM 50 diode fr 207

    BSM141

    Abstract: No abstract text available
    Text: SIEMENS SIMOPAC MOSFET Module VDS l0 ^ D S o n • • • • • • BSM 141 = 400 V = 60 A = 0.075 Q Power module Single switch N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig . 1 a1) Type Ordering code BSM 141


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    PDF C67076-A1010-A2 BSM141

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIMOPAC MOSFET Module BSM 191 C VDS = 1000 V lD = 28 A ^DS(on) = 0.37 fì • • • • • • Power module Single switch N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig . 1 a') Type Ordering code BSM 191 (C)


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    PDF C67076-A1009-A2

    Untitled

    Abstract: No abstract text available
    Text: ê235bOS 0Û20c]a4 M El SIEG SlEIVli SIEMENS AKTIENGESELLSCHAF M7E D ; T - - 3 7 -3 Ì BSM 151 F C BSM 151 FR SIMOPAC MOSFET Modules Vos Id = 500 V = 56 A ^ D S (o n ) = 1 Q • Pow er m odule • Sin gle switch • FREDFET • N channel • Enhancem ent m ode


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    PDF 235bOS fl235LiG5

    Untitled

    Abstract: No abstract text available
    Text: B ô23SbOS DQSG^lô 4 H S I E G SIEMENS AKTIENGESELLSCHAF 47E D 7 SIMOPAC MOSFET Modules BSM 181 F C BSM 181 FR = 800 V = 34 A ^D3(on) = 0.32 Q Vos h • Power module • Single switch • FREDFET • N channel • Enhancement mode • Package with Insulated metal base plate


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    PDF 23SbOS C67076-A1052-A2 C67076-A1057-A2 T-39-15

    T39 diode

    Abstract: No abstract text available
    Text: flSBSbOS ODSDÔTÔ 2 HI SIE6 SIEMENS AK TIE NGESELLSC HAF S IE iV 1 E i\S S 4?E D "T -3 9 -3 Î SIMOPAC MOSFET Modules A = 500 V à 48 A ^ D S o n ) a 0.12 Q VM • • • • • • BSM 151 (C) BSM 151 R Power module Single switch N channel Enhancement mode


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    PDF 67076-A1004-A2 67076-A1015-A2 A235bQ5 Q020T03 T39 diode

    Untitled

    Abstract: No abstract text available
    Text: ö 2 3 S d GS SIEMEN! O O aC H ll SIEMENS 1 S IE ö AKTIENGESELLSCHAF M7E T V 3 9 -/5 SIMOPAC® MOSFET Modules v03 = 800 v l0 = 36 A 0.24 Q BSM 181 (C BSM 181 R ^ D S (o n ) = • • • • • • Power module Single switch N channel Enhancement mode


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    PDF C67076-A1001-A2 C67076-A1016-A2 123SbQS. fi235bOS

    Untitled

    Abstract: No abstract text available
    Text: H ISIE G â235bG5 0020077 s SIEMENS SIEMENS A KT IE NGESELLSCHAF 47E T> T -39-/5 SIMOPAC MOSFET Module ^03 A ^DS on) • • • • • • BSM 121 AR (C) = 200 V = 130 A '=» 20 mfl Power module Single switch N channel Enhancement mode Package with insulated metal base plate


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    PDF 235bG5 C67076-S1014-A2 235b05 535b05 T-39-15

    BSM254F

    Abstract: No abstract text available
    Text: SIEMENS SIMOPAC MOSFET Module VDS lD = 500 V =2x35 A ^ D S o n = 0.17 Q • • • • • • • BSM 254 F Power m odule H alf-bridge FREDFET N channel Enhancem ent mode Package with insulated metal base plate C ircuit diagram : Fig . 2 a ') Type Ordering code


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    PDF 150-A2 BSM254F

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIMOPAC MOSFET Module VDS lo ^ D S o n • • • • • • • BSM 191 F (C) = 1000 V = 28 A = 0.42 Q Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a ’ ) Type


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    PDF C67076-A1053-A2

    bsm214a

    Abstract: BSM 214 A
    Text: SIEMENS SIMOPAC MOSFET Module BSM 214 A VDS lD = 100 V =2x125 A ^ D S on = 0.013 Q • • • • • • Power m odule H a lf-brid ge N channel Enhancem ent mode Package with insulated metal base plate C ircuit diagram : Fig . 2 a ') Type Ordering code


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    PDF 2x125 67076-S bsm214a BSM 214 A

    BSM111

    Abstract: No abstract text available
    Text: SIEMENS SIMOPAC MOSFET Module VDS /D BSM 111 AR C = 100 V = 200 A ^DS(on) = 8*5 mQ • • • • • • Power m odule Single switch N channel Enhancem ent m ode Package with insulated m etal base plate C ircuit diagram : Fig . 1 a ’ ) Type Ordering code


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    Untitled

    Abstract: No abstract text available
    Text: • S 1E M E N ! ÛS35bGS GGEGTBS ^ C3SIE6 SIEMENS AK TI EN GES ELLS CHAF M7E D 39-/5 SIMOPAC MOSFET Module BSM 191 F C Vbs = 1000 V /„ = 28 A ^DS(on) = 0.42 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode


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    PDF S35bGS C67076-A1053-A2 53SbDS T-39-15 0235bG5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIMOPAC MOSFET Module BSM 651 F Vos = 500 V lD = 6 X 9 A ^DS on = 0.7 Q • • • • • • • Power m odule 3 -p ha se fu ll-b rid g e FREDFET N channel E nhancem ent m ode Package with insulated m etal base plate C ircuit diagram : Fig . 3 a ’ )


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    PDF 7076-A 500-A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIMOPAC MOSFET Module ^DS Id ^ D S o n | • • • • • • • BSM 692 F = 1000 V = 6x9 A = 1.25 Q Power m odule 3-p ha se fu ll-b rid g e FREDFET N channel E nhancem ent mode Package with insulated metal base plate C ircuit diagram : Fig. 3 a 1


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    PDF 7076-A 503-A

    Untitled

    Abstract: No abstract text available
    Text: • A23SbD5 0050070 2 S S I E G S Ü E IV IE ^ IS SIEMENS AKTIENGESELLSCHAF 47E T - 3 9 -iS SIMOPAC MOSFET Module BSM 111 AR C v03 = 100 V /q = 200 A ^DSIon) = • • • • • • Power module Single switch N channel Enhancement mode Package with Insulated metal base plate


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    PDF A23SbD5 23SbOS

    "MOSFET Module"

    Abstract: siemens bsm 284 f
    Text: SIEMENS BSM 284 F SIMOPAC MOSFET Module = 800 V = 2 X 20 A ^DSIont = 0.48 Q VDS lD • • • • • • • Power m odule H alf-bridge FREDFET N channel E nhancem ent mode Package with insulated m etal base plate C ircuit diagram : Fig. 2 a 1 Type Ordering code


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    PDF 152-A2 "MOSFET Module" siemens bsm 284 f

    ATIC 224

    Abstract: siemens mosfet BSM 50
    Text: SIEMENS SIMOPAC MOSFET Module VDS = 200 V /q = ^ D S o n = 0.03 Q • • • • • • 2 x 81 BSM 224 A a Power m odule H alf-bridge N channel E nhancem ent mode Package with insulated m etal base plate C ircuit diagram : Fig. 2 a 1) Type Ordering code


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    siemens BSM b2

    Abstract: smd zener GD AX transistor fp 1016 79 p Siemens anwendungsbeispiele siemens igbt BSM 25 gb 100 d BTS412A DIODE ZENER BZW 04 TRANSISTOR EN SMD TZ N-Kanal FET BTS542R
    Text: Technische Angaben SIPMOS-Leistungstransistoren und Dioden SIPMOS-Leistungstransistoren Transistoren im Bereich 50 V . 1000 V, 1,5 A . 60 A und 18 mQ . 8 Q. P -K a n a l N-Kanal Produktpalette • • • • • N- und P-Kanal-Anreicherungstypen FREDFET


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    PDF B152-B6299-X-X-7400 siemens BSM b2 smd zener GD AX transistor fp 1016 79 p Siemens anwendungsbeispiele siemens igbt BSM 25 gb 100 d BTS412A DIODE ZENER BZW 04 TRANSISTOR EN SMD TZ N-Kanal FET BTS542R

    BSM 204-A

    Abstract: No abstract text available
    Text: SIEM ENS SIMOPAC MOSFET Modules BSM 151 C BSM 151 R Vas = 500 V l0 = 48 A ^DS(on) = 0.12 Ö • • • • • • Power module Single switch N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1a ') Type Ordering code


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    PDF C67076-A1004-A2 C67076-A1015-A2 BSM 204-A

    siemens mosfet BSM 50

    Abstract: BSM181C
    Text: SIEM EN S SIMOPAC VDS /D ^ D S o n • • • • • • MOSFET Modules BSM 181 (C) BSM 181 R = 800 V = 36 A ~ 0.24 ß Power module Single switch N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1a') Type Ordering code


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    PDF C67076-A1001-A2 C67076-A1016-A2 040aft siemens mosfet BSM 50 BSM181C

    BT diode

    Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
    Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,


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    Untitled

    Abstract: No abstract text available
    Text: SIMOPAC MOSFET Module VDS lD ^ D S o n • • • • • • • BSM 244 F = 400 V = 2 x 45 A = 0.1 Q Power module Half-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 2 a ’ ) Type Ordering code


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    PDF C67076-A1155-A2

    Untitled

    Abstract: No abstract text available
    Text: Ç IEM FM S SIMOPAC MOSFET Module BSM 691 F Vds = 1000 V = 6 x 4.8 A ^DS on = 2.5 ß lD • • • • • • • Power module 3-phase full-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 3 a 1)


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    PDF C67076-A1502-A2