Untitled
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) SFH 4580 SFH 4585 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 1 1998-11-12 SFH 4580 SFH 4585 SIEMENS Wesentliche Merkmale
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SFH4580
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silizium Fototransistor Silicon NPN Phototransistor SFH 3500/FA SFH 3505/FA Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Semiconductor Group 1 1998-12-18 SFH 3500/FA SFH 3505/FA SIEMENS Wesentliche Merkmale
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3500/FA
3505/FA
FA/3505
3500/FA)
3505/FA)
PCE25
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) Cathode (SFH 480) Anode (SFH 216, SFH 231 SFH 400) Chip position SFH 480 SFH 481 SFH 482 Radiant Sensitive area o O) o CO o GE006314 2.7 Chip position 00.45 Anode = SFH 481 Cathode = SFH 401
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GE006314
GET06091
GET06013
OHR00881
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SFH Siemens
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400 SFH 401 SFH 402 Cathode SFH 480 Anode (SFH 216, SFH 231 SFH 400) Chip position Radiant Sensitive area o o (O o O) GE006314 : SFH 481 Anode Cathode : SFH 401 O ) o (O o Chip position (2.7) Radiant sensitive area
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GE006314
GET06013
OHRD1937
SFH Siemens
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SFH Siemens
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position 2.7 SFH 400 SFH 401 SFH 402 Cathode (SFH 480 Anode (SFH 216, SFH 231, SFH 400) Radiant Sensitive area 00.45 i -L 5.3 5.0 7.4 GE006314 O Oí o o (O 6.6 Approx. weight 0.5 g Anode = SFH 481
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GE006314
GET06091
SFH401
SFH Siemens
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 rC a th o d e (SFH 4 8 0 ) R adiant i1 Anode (SFH 216, SFH 231, Sensitive area Chip p osition (2 .7 ) I SFH 4 0 0 ) \y o . / ~i t4 y / 0 0 .4 5 I -1 (T 7
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Lambda diode
Abstract: tx 2G SFH480403 TCI diode
Text: SIEMENS SFH 48 0442 SFH 48 0443 Preliminary Datasheet InGaAs - Laser Diode 1000 mW Wavelength 940 run, chip on carrier Data differing from SFH 48 0402 and SFH 48 0403: Characteristic Data: Para meter: Typical Values Unit Condition nm nm rïiA W /A mA rnV Ohm
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94verse
Lambda diode
tx 2G
SFH480403
TCI diode
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Fototransistor
Abstract: B 303 D
Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 303 SFH 303 FA W esentliche Merkm ale Features • • • • • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm SFH 303 und bei 880 nm (SFH 303 FA) Hohe Linearität
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SFH303FA
Fototransistor
B 303 D
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transistor d 1825 7c
Abstract: Q62702-P5084 9304 9306 transistor k 4110 sfh 123-2 h9303 l 9302
Text: SIEMENS Gabellichtschranken Slotted Interrupters SFH 9301, SFH 9302, SFH 9303, SFH 9304, SFH 9306 Vorläufige Daten / Preliminary Data [2341 Lh J 7.9 1o — SFH 9301 ~ 2oEmitter \ Sensor " -o 3 GPX06992 CM Ol O CD O X Q. M aß e in mm, w enn nicht anders angegeben/D im ensions in mm , unless otherwise specified.
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GPX06992
H9302>
H9303'
transistor d 1825 7c
Q62702-P5084
9304
9306
transistor k 4110
sfh 123-2
h9303
l 9302
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SFH 5110-36
Abstract: 38 khz tv ir remote SFH 5110-38 ir active bandpass filter circuit diagram ir remote control light circuit diagram siemens infrared preamplifier TV IR remote control circuit diagram sfh5110 511040 IR remote control switch circuit diagram
Text: SIEMENS IR-Empfänger für Fernbedienungen IR-Receiver for Remote Control Systems SFH 5110 SFH 5111 Vorläufige Daten / Preliminary Data Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Beschreibung Description SFH 5110 und SFH 5111 sind Infrarot-Empfänger
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5110-xx
5111-XX
OHF00430
SFH 5110-36
38 khz tv ir remote
SFH 5110-38
ir active bandpass filter circuit diagram
ir remote control light circuit diagram
siemens infrared preamplifier
TV IR remote control circuit diagram
sfh5110
511040
IR remote control switch circuit diagram
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Untitled
Abstract: No abstract text available
Text: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 314 SFH 314 FA MaBe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet fur Anwendungen im Bereich von 460 nm bis 1080 nm SFH 314
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SFH314iSre|
sensitivitySFH314FA
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sfh diode
Abstract: sfh siemens Hall Siemens
Text: SIEMENS SFH 409 INFRARED EMITTER FEATURES Maximum Ratings • Radiant Intensity Selections SFH 409-1, 6 .3 -1 2.S mW/sr SFH 409-2, 1 0 -2 0 mW/sr SFH 409-3, ¿16 mW/sr Operating and Storage Temperature Range Top, TSTe . -55° to +100“C
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100mA,
100ns)
TV-25"
sfh diode
sfh siemens
Hall Siemens
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Untitled
Abstract: No abstract text available
Text: 0235bOS OOMbb1^ bOE D 324 « S I E Q SFH 205 SFH 205Q2 SFH 206 SIEMENS SIEMENS AKTIENGESELLSCHAF SILICON PHOTODIODE DAYLIGHT FILTER P a c k a g e D im e n sio n s in In ch e s m m 1 336 (34) Cathode 200 (5 1) 185 (4 7) 161 T * 41) r H (3 7) 145 100 t 336 (34)
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0235bOS
205Q2
523SbDS
D4b700
205/SFH
20SQ2/SI-H
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Q62702-P1806
Abstract: 4580 4580 chip Phototransistor SFH
Text: SIEMENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) SFH 4580 SFH 4585 Chip position 4.5 7.5 3.9 5.5 2.7 2.3 .2.05 ' 1.95 3.7 3.3 14.7 .13.1 Cathode E 05 II I GE006960 - A—• SFH 4580 evi "> 4.5 3.9 ' 7.7 Chip position 4.5
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GE006960
GE006961
SFH4580
OHRQ0696
Q62702-P1806
4580
4580 chip
Phototransistor SFH
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 487501 SFH 487506 GaAlAs-LASER DIODE 1500 mW WITH FC-CONNECTOR 1100 mWP Package Dimensions in mm 5.2 ±0.3 SFH 487501 0.8 ± 0.2 00.6 “ ± 0.1 2.6 1. Laserdiode Cathode 2.NTC 3.NTC case Anode ± 0.2 SFH 487506 2.4 4.6 ± 0.1 - 5.5 0.2 M8X0.75
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters (950 nm) SFH 4510 SFH 4515 Chip position 4.5 3.9 8.0 7.4 * P i . R 2 '05 r 1.95 15 .5 14.7 GE006969 SFH 4515 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GE006969
SFH4510
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Untitled
Abstract: No abstract text available
Text: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anw endungen im B ereich von 400 nm bis 1100 nm S F H 310 und bei 880 nm (SFH 310 FA) • H ohe Linearität
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SFH310FA
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 483401 SFH 483406 GaAlAs-LASER DIODE 1000 mW WITH FC-CONNECTOR 750 m W 2 Package Dimensions in mm SFH 483401 1 2 3 4 SFH 483406 11.7 ±0 3 NC NTC NTC laserdiode Cathode 5 6 7 8 Laserdiode Anode Monitor Diode Anode Monitor Diode Cathode NC ' 59
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A53b3Eb
aE3b32b
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat Chip position -Cathode SFH 409 Anode (SFH 487, SFH 4391) O in C\J (O o X 0) G EX06250 M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale
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EX06250
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Untitled
Abstract: No abstract text available
Text: LOE D 023SbDS IS I E G DD4b55D b3T -T-4 -S o SFH 2325 SFH 2326 SIEMENS GE-AVALANCHE PHOTODIODE WITH MM FIBER PIGTAIL SIEMENS A K T IE N G E S ELLS-CHA.F Package Dimensions in mm FEATURES Maximum Ratings * Designed for Application in Fiber-Optic Communication Systems
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023SbDS
DD4b55D
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SFH404
Abstract: lem 50
Text: SIEMENS SFH 484 SFH 485 GaAIAs INFRARED EMITTER FEATURES • T13/4 Package • Clear Plastic Lens • Long Term Stability • Very High Power, 25 mW Typical at 100 mA • SFH 484-16° Narrow Beam, SFH 485-40° Medium Beam • Smoke Detection Application: SFH484E7517 UL Recognized
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SFH484E7517
484-Radlation
405-Radlation
SFH404
lem 50
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Phototransistor bp 101
Abstract: SFH300 siemens SFH nm Q62702-P1057 Q62702-P1058 Q62702-P1189 Q62702-P1192 Q62702-P1193 Q62702-P85-S2 Q62702-P85-S3
Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 300 SFH 300 FA Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm SFH 300
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GE006652
/CE0250
0HF01593
Phototransistor bp 101
SFH300
siemens SFH nm
Q62702-P1057
Q62702-P1058
Q62702-P1189
Q62702-P1192
Q62702-P1193
Q62702-P85-S2
Q62702-P85-S3
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 420 SFH 425 GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package o .u tvo ; d 0.12 C athode C ollector SFH 420 TOPLED OH*' 24 C o th o d e / Collector spacing A node/ EmiMer C ollector/C athode m orking SFH 425 SIDELED'
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em 483
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter 00.45 SFH 483 Chip position I Anode LD 242, BPX63, SFH 464 Cathode (SFH 483) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale
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BPX63,
IQ100
450k/W
em 483
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