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    SIEMENS TC 35 Search Results

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    siemens igbt BSM 300

    Abstract: siemens igbt BSM 200 GA 120 NC4000
    Text: ta□ E D • SIEMENS ÖEBSbOS GDMSTEfl T2T ISIE6 SIEMENS AKTIENGESELLSCHAF -r -3 9 -^ 5 BSM 300 GA 120 D IGBT Module Preliminary Data VCE = 1200 V = 400 A at Tc = 25 C = 300 A at 80 'C Ic Ic Tc = • Power module • Single switch • Including fast free-wheel diodes


    OCR Scan     		PDF C67076-A2007-A2 siemens igbt BSM 300 siemens igbt BSM 200 GA 120 NC4000

    BSM25GD120D

    Abstract: No abstract text available
    Text: bGE » ûaaSbGS 0045032 47T « S I E G • SIEMENS SIEMENS AKTIENGESELLSCHAF - 9 7 BSM 25 GD 120 D IGBT Module Preliminary Data V CE = 1200 V / c = 6 x 35 A at Tc = 25 C I c = 6 x 25 A at Tc = 80 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes


    OCR Scan     		PDF C67076-A2505-A2 sii00219 sii00220 BSM25GD120D

    LF50

    Abstract: No abstract text available
    Text: bOE D • fl23SbGS DDi4b551 57b « S I E G -7=<Y/-&7 SIEMENS SFH4210 SIEMENS AKTIENGESELLSCHAF INFRARED EMITTING DIODE T018PA C K A G E ^ ■L Preliminary Data Sheet FEATURES Maximum Ratings * InGaAsP/lnP IRED Operating Temperature Range at Case Tc Storage Temperature Range (T3To)


    OCR Scan     		PDF fl23SbGS DDi4b551 SFH4210 T018PA LF50

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancem ent mode FREDFET Type ^DS BUZ 205 400 V ^DS on 6.0 A 1.0 ß Maxim um Ratings Parameter Continuous drain current, Tc = 35 "C Pulsed drain current, Tc = 25 ”C Drain-source voltage Drain-gate voltage, R GS = 20 kQ


    OCR Scan     		PDF C67078-A14 01-A2 S1L02486

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type ^DS ¡0 11DS on BUZ 78 800 V 1.5 A 9.0 £2 Maxim um Ratings Parameter Continuous drain current, Tc = 25 'C Pulsed drain current, Tc = 25 °C Avalanche current, limited by Timax


    OCR Scan     		PDF O-220 C67078-S1318-A2

    BUZ171

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type ^ DS /□ ^DS on BUZ 171 -5 0 V -8 .0 A 0.3 Q Maximum Ratings Parameter Continuous drain current, Tc = 30 "C Pulsed drain current, Tc = 25 "C Avalanche energy, single pulse


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    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type_ BUZ 41 A 500 V Id ^ D S on 4.5 A 1.5 n Maximum Ratings Parameter Continuous drain current, Tc = 36 "C Pulsed drain current, Tc = 25 °C Avalanche current, limited by Ttmui


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    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • BUZ 60 N channel Enhancement mode Avalanche-rated VPT05381 Type V'ds BUZ 60 400 V 5.5 A ^DS on Package 1* Ordering Code 1.0 Q TO -220 AB C67078-S1312-A2 M axim um Ratings Parameter Symbol Tc = 36 "C Tc = 25 "C


    OCR Scan     		PDF C67078-S1312-A2

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPWIOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type ^DS i A ^DS on) BUZ 312 1000 V I 6.0 A 1.5 n Maxim um Ratings Parameter Continuous drain current, Tc = 33 ‘ C Pulsed drain current, Tc = 25 "C Avalanche current, limited by Ti max


    OCR Scan     		PDF C67078-S3129-A2

    BUZ72A

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistors • N channel • Enhancement mode • Avalanche-rated T yp e_ 17DS ID ^ DS on BUZ 72 100V 10 A 0 .2 0 £2 BUZ 72 A 100 V 9.0 A 0.25 Í2 Maximum Ratings Parameter Continuous drain current, Tc = 25 C Pulsed drain current, Tc = 25 "C


    OCR Scan     		PDF BUZ72 BUZ72A

    siemens ha 8000

    Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
    Text: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper


    OCR Scan     		PDF C67076-A2105-A2 C67076-A2010-A2 siemens ha 8000 BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type V Ds BUZ 94 600 V /d 7.8 A ^DS on Package 1> Ordering Code 0.9 Q TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 27 'C h 7.8 Pulsed drain current, Tc = 25 ”C


    OCR Scan     		PDF O-204 C67078-A1019-A2 35bOS fi535tDS A235bQ5

    3Tg 21 10 siemens

    Abstract: BSM25GB100D 3Tg 21 20 siemens siemens igbt BSM 150 Gb 160 d siemens 3TG 3TG siemens pl0l siemens igbt BSM 300 T-23 siemens igbt BSM 25 Gb 100 d
    Text: bGE D • A23SbOS OGMSöDfl ISO ■ S I E G Sl EM ENS SIEMENS AKTIEN6ESELLSCHAF T - 2 3 ^ 0 7 BSM 25 GB 100 D BSM 25 G AL 100 D IGBT Module Preliminary Data vCE= 1000 v / C = 2 x 35 A at Tc = 25 C / c = 2 x 25 A at Tc = 80 C • Power module • Half-bridge/Chopper


    OCR Scan     		PDF A23SbOS C67076-A2101-A2 C67076-A2008-A2 3Tg 21 10 siemens BSM25GB100D 3Tg 21 20 siemens siemens igbt BSM 150 Gb 160 d siemens 3TG 3TG siemens pl0l siemens igbt BSM 300 T-23 siemens igbt BSM 25 Gb 100 d

    siemens igbt BSM 50 gb 120 d

    Abstract: No abstract text available
    Text: SIEMENS IGBT Module Preliminary Data BSM 75 GB 120 D BSM 75 GAL 120 D VCE = 1200 V / c = 2 x 100 A at Tc = 25 "C I c = 2 x 75 A at Tc = 80 C • • • • • Power module Half-bridge/Chopper Including fast free-wheel diodes Package with insulated metal base plate


    OCR Scan     		PDF C67076-A2106-A2 C67076-A2011-A2 siemens igbt BSM 50 gb 120 d

    BUZ84

    Abstract: DIODE BUZ
    Text: SIEMENS SIPMOS Power Transistors • • N channel Enhancem ent mode Type ^DS ¡0 Tc ^DS on BUZ 84 800 V 5.3 A 25 ‘ C 2.0 a BUZ 84 A 800 V 6.0 A 29 "C 1.5 a M axim um Ratings Parameter Continuous drain current Pulsed drain current, Tc = 25 "C Drain source voltage


    OCR Scan     		PDF C67078-A1013-A2 C67078-A1013-A3 BUZ84 DIODE BUZ

    buz77a

    Abstract: st BUZ
    Text: SIEMENS SIPMOS Power Transistors • • • N channel Enhancem ent mode Avalanche-rated Type ^ DS Id Tc BUZ 77 A 600 V 2.7 A 31 "C 4.0 £2 BUZ 77 B 600 V 2.9 A 29 "C 3.5 Q I ^DS on M axim um Ratings Parameter Continuous drain current Pulsed drain current, Tc = 25 "C


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    TCA 205 N

    Abstract: TCA 200 y TCA 150 t IEB00806 IC for Inductive Proximity Switches TCA 150
    Text: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar IC Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier


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    transistor 355

    Abstract: 530AD
    Text: SIEMENS BUZ 355 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 355 Vbs 800 V 6A flbston Package Ordering Code 1.5 w TO-218AA C67078-S3107-A2 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 29 °C


    OCR Scan     		PDF O-218AA C67078-S3107-A2 O-218 transistor 355 530AD

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; • Lower output saturation voltage Is < 1 mA • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier


    OCR Scan     		PDF 6235bà P-DSO-14-1, P-DS0-14-4 35x45 Q254WIBi S35bG5

    NF 841 switching diode

    Abstract: DIODE NF-841 TCA355B
    Text: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier


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    8 PIN SMD IC 305

    Abstract: TCA355B NF 841 switching diode TCA 355 TCA 150 t TCA355G
    Text: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar IC Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier


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    BPX61

    Abstract: Siemens Si PIN photodiode GM006011
    Text: SIEMENS BPX 61 Silicon Photodiode Dimensions in inches mm .570 ¡14.5) .134 (3.4) '.116(3.0) .491 (12.5) Cathode 'SI Radiant sensitive area t 0.373(9.5) 0 .354 (9.0) ‘0 .326 (8.3) 0.314(8.0) .200 (5.08) Tc — 0 .018 (0.45) .069(1.75) .061 (1.55)" >39(1.0)


    OCR Scan     		PDF GM006011 Xa850nm BPX61 Siemens Si PIN photodiode GM006011

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 357 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 357 1000 V 5.1 A ^bS on Package Ordering Code 2w TO-218 AA C67078-S3110-A2 Maximum Ratings Parameter Symbol Continuous drain current Id Tc = 25 °C


    OCR Scan     		PDF O-218 C67078-S3110-A2 200-----V

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS KSY13 Position Hall Sensor Features • • • • High sensitivity High operating temperature Low offset voltage Low TC of sensitivity and internal resistance • Plastic miniature package SOT 143 for surface mounting SMT Typical applications • Digital speed sensors


    OCR Scan     		PDF KSY13 Q62705-K209 18-cm 00bfl477 0HSQQQ99 fl23SbD5 00bfl47A