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    Infineon Technologies AG SIGC07T60NCX1SA4

    IGBT 3 CHIP 600V WAFER
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    Infineon Technologies AG SIGC07T60NCX1SA1

    IGBT 3 CHIP 600V WAFER
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    Infineon Technologies AG SIGC07T60NCX7SA1

    IGBT 3 CHIP 600V WAFER
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    SIGC07T60NC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIGC07T60NC Infineon Technologies IGBT Chip in NPT-Technology Original PDF
    SIGC07T60NC Infineon Technologies For drive application Original PDF

    SIGC07T60NC Datasheets Context Search

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    7212

    Abstract: 7212M
    Text: Preliminary SIGC07T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC07T60NC 600V This chip is used for: • IGBT-Modules G Applications: • drives


    Original     		PDF SIGC07T60NC Q67050-A4134sawn 7212-M, 7212 7212M

    Untitled

    Abstract: No abstract text available
    Text: SIGC07T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC07T60NC 600V This chip is used for: • IGBT-Modules G Applications: • drives ICn 6A Die Size


    Original     		PDF SIGC07T60NC Q67050-A4134A001 7212-M,

    SIGC07T60NC

    Abstract: No abstract text available
    Text: SIGC07T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC07T60NC 600V This chip is used for: • IGBT-Modules G Applications: • drives ICn 6A Die Size


    Original     		PDF SIGC07T60NC Q67050-A4134A001 7212-M, SIGC07T60NC

    SIGC07T60NC

    Abstract: No abstract text available
    Text: SIGC07T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC07T60NC 600V This chip is used for: • IGBT-Modules G Applications: • drives ICn 6A Die Size


    Original     		PDF SIGC07T60NC Q67050-A4134A001 7212-M, SIGC07T60NC