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    Infineon Technologies AG SIGC81T60SNCX1SA1

    IGBT 3 CHIP 600V WAFER
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    Infineon Technologies AG SIGC81T60SNCX7SA1

    IGBT 3 CHIP 600V WAFER
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    SIGC81T60SNC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIGC81T60SNC Infineon Technologies For faster switching drive application low turn off energy Original PDF

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    7462-S

    Abstract: A003 SIGC81T60SNC
    Text: Preliminary SIGC81T60SNC IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type SIGC81T60SNC VCE 600V ICn 100A C This chip is used for: • IGBT-Modules


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    PDF SIGC81T60SNC Q67050-A4164sawn 7462-S, 7462-S A003 SIGC81T60SNC

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    Abstract: No abstract text available
    Text: SIGC81T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • IGBT-Modules G Applications: • drives Chip Type VCE


    Original
    PDF SIGC81T60SNC Q67050-A4164A003 7462-S,

    600v 100a die size

    Abstract: SIGC81T60SNC
    Text: SIGC81T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • IGBT-Modules G Applications: • drives Chip Type VCE


    Original
    PDF SIGC81T60SNC Q67050-A4164A003 7462-S, 600v 100a die size SIGC81T60SNC