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    SIGE BICMOS TRANSISTOR BIAS BLOCK GENERATOR SHUNT Search Results

    SIGE BICMOS TRANSISTOR BIAS BLOCK GENERATOR SHUNT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SIGE BICMOS TRANSISTOR BIAS BLOCK GENERATOR SHUNT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RF5722 3.0 V TO 3.6 V, 2.4 GHz TO 2.5 GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2 mm x 2.2 mm x 0.45 mm Features „ „ „ „ „ Single Power Supply 3.0 V to 3.6 V 24 dB Minimum Gain Input and Output Matched to 50 Ω 2400 MHz to 2500 MHz Frequency Range


    Original     		PDF RF5722 IEEE802 11b/g/n RF5722 DS090715

    laptop schematic power supply circuit diagram

    Abstract: metal detector circuit with pcb IPC-SM-782 QFN12 RF5722 metal detector schematic gold metal detector schematic
    Text: RF5722 3.0 V TO 3.6 V, 2.4 GHz TO 2.5 GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2 mm x 2.2 mm x 0.45 mm Features      Single Power Supply 3.0 V to 3.6 V 24 dB Minimum Gain Input Matched to 50  2400 MHz to 2500 MHz Frequency Range


    Original     		PDF RF5722 IEEE802 11b/g/n RF5722 DS100622 laptop schematic power supply circuit diagram metal detector circuit with pcb IPC-SM-782 QFN12 metal detector schematic gold metal detector schematic

    RF5722PCBA-41X

    Abstract: RF5722 laptop schematic power supply circuit diagram IPC-SM-782 QFN12 qfn 28 land pattern rf power amplifier circuit diagram with pcb layout
    Text: RF5722 3.0 V TO 3.6 V, 2.4 GHz TO 2.5 GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2 mm x 2.2 mm x 0.45 mm Features „ „ „ „ „ Single Power Supply 3.0 V to 3.6 V 24 dB Minimum Gain Input and Output Matched to 50 Ω 2400 MHz to 2500 MHz Frequency Range


    Original     		PDF RF5722 IEEE802 11b/g/n RF5722 DS090615 RF5722PCBA-41X laptop schematic power supply circuit diagram IPC-SM-782 QFN12 qfn 28 land pattern rf power amplifier circuit diagram with pcb layout

    Untitled

    Abstract: No abstract text available
    Text: RF5722 3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features        VC1 RF IN 1 Single Power Supply 3.0V to 3.6V 24dB Minimum Gain Input Matched to 50 2400MHz to 2500MHz Frequency Range +18dBm at <2.5% typ EVM, 120mA at 3.3VCC


    Original     		PDF RF5722 2400MHz 2500MHz 18dBm 120mA IEEE802 11b/g/n DS110619

    RF 4*4 mm QFN power amplifier ISM 900 MHz

    Abstract: transistor 2.4GHz amplifier schematic wifi SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR metal detector circuit with pcb
    Text: RF5722 3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features        VC1 RF IN 1 Single Power Supply 3.0V to 3.6V 24dB Minimum Gain Input Matched to 50 2400MHz to 2500MHz Frequency Range +18dBm at <2.5% typ EVM, 120mA at 3.3VCC


    Original     		PDF RF5722 IEEE802 11b/g/n RF5722 DS110619 RF 4*4 mm QFN power amplifier ISM 900 MHz transistor 2.4GHz amplifier schematic wifi SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR metal detector circuit with pcb

    Untitled

    Abstract: No abstract text available
    Text: RF5322 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.4mm 8 7 Features    RF IN 1 6 VC2 Input Match     IEEE802.11b/g/n WiFi Applications 2.5GHz ISM Band Applications Commercial and Consumer


    Original     		PDF RF5322 IEEE802 11b/g/n 2400MHz 2500MHz 18dBm 120mA 2002/95/EC DS110618

    Untitled

    Abstract: No abstract text available
    Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features    RF IN 1 6 VC2 Input Match     IEEE802.11b/g/n WiFi Applications 2.5GHz ISM Band Applications Commercial and Consumer


    Original     		PDF RF5122 IEEE802 11b/g/n 2400MHz 2500MHz 18dBm 120mA DS110617 2002/95/EC

    c1533

    Abstract: No abstract text available
    Text: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description 1 2 The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS


    Original     		PDF RF2173 RF2173 800MHz 950MHz 36dBm. 36dBm, c1533

    jack P4

    Abstract: RF5152 RF5152PCBA-41X Gan hemt transistor x band laptop mini pci slot pin details 2.4Gh
    Text: RF5152 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER „ Single Power Supply 3.0V to 3.6V „ „ „ „ NC VC2 NC 12 RF IN 2 34dB Typical Small Signal Gain Match RF IN 3 2400MHz to 2500MHz Frequency Range RF OUT/ VC3 11 RF OUT Match Match 50Ω Input and Interstage Matching


    Original     		PDF RF5152 16-Pin, 2400MHz 2500MHz 18dBm, 130mA IEEE802 11b/g/n RF5152 2400MHz jack P4 RF5152PCBA-41X Gan hemt transistor x band laptop mini pci slot pin details 2.4Gh

    Untitled

    Abstract: No abstract text available
    Text: RF5152 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VC1 NC VC2 NC Package Style: QFN, 16-Pin, 3 mm x 3 mm 16 15 14 13 NC 1 Features 34dB Typical Small Signal Gain  50 Input and Interstage Matching  2400MHz to 2500MHz Frequency Range  +18dBm, 2.5%EVM typ. ,


    Original     		PDF RF5152 16-Pin, 2400MHz 2500MHz 18dBm, 130mA IEEE802 11b/g/n 2400MHz

    Untitled

    Abstract: No abstract text available
    Text: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2 mm x 2 mm x 0.6 mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications


    Original     		PDF RF5122 IEEE802 11b/g/n RF5122 2002/95/EC DS070221

    RF5122

    Abstract: metal detector circuit with pcb IPC-SM-782 QFN12 RF5122PCBA-41X P12 RF PIN SOT
    Text: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications


    Original     		PDF RF5122 IEEE802 11b/g/n 2400MHz 2500MHz 18dBm 120mA RF5122 2002/95/EC DS070517 metal detector circuit with pcb IPC-SM-782 QFN12 RF5122PCBA-41X P12 RF PIN SOT

    Untitled

    Abstract: No abstract text available
    Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features    RF IN 1 6 VC2 Input Match     IEEE802.11b/g/n WiFi Applications 2.5GHz ISM Band Applications Commercial and Consumer


    Original     		PDF RF5122 IEEE802 11b/g/n RF5122 2002/95/EC DS110617

    Untitled

    Abstract: No abstract text available
    Text: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications


    Original     		PDF RF5122 IEEE802 11b/g/n RF5122 2002/95/EC DS070820

    RF5122

    Abstract: IPC-SM-782 QFN12 RF5122PCBA-41X RF Based Wireless Electronic Notice Board pc
    Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial and Consumer


    Original     		PDF RF5122 IEEE802 11b/g/n 2400MHz 2500MHz 18dBm 120mA RF5122 2002/95/EC DS090209 IPC-SM-782 QFN12 RF5122PCBA-41X RF Based Wireless Electronic Notice Board pc

    Untitled

    Abstract: No abstract text available
    Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications


    Original     		PDF RF5122 IEEE802 11b/g/n 2400MHz 2500MHz 18dBm 120mA RF5122 2002/95/EC DS080513

    Untitled

    Abstract: No abstract text available
    Text: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications


    Original     		PDF RF5122 IEEE802 11b/g/n RF5122 2002/95/EC DS080103

    RF5122

    Abstract: metal detector circuit with pcb IPC-SM-782 QFN12 QFN8 RF
    Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features    RF IN 1 6 VC2 Input Match     IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial and Consumer


    Original     		PDF RF5122 IEEE802 11b/g/n 2400MHz 2500MHz 18dBm 120mA 2002/95/EC DS100621 RF5122 metal detector circuit with pcb IPC-SM-782 QFN12 QFN8 RF

    RF5110

    Abstract: RF5111 GSM900
    Text: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS


    Original     		PDF RF5110 RF5110 800MHz 950MHz 203mm 330mm 025mm RF5111 GSM900

    Untitled

    Abstract: No abstract text available
    Text: RF2138 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Portable Battery-Powered Equipment • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible • Commercial and Consumer Systems U F pg O ra R de d N P E ro W du ct D R ES


    Original     		PDF RF2138 RF2138 800MHz 950MHz 36dBm. 36dBm,

    RF5111

    Abstract: GSM900 RF5110 SiGe BiCMOS transistor bias block generator shunt PFC915
    Text: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS


    Original     		PDF RF5110 RF5110 800MHz 950MHz 203mm 330mm 025mm RF5111 GSM900 SiGe BiCMOS transistor bias block generator shunt PFC915

    RF2173

    Abstract: IPC-SM-782 RF2174 030514
    Text: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS


    Original     		PDF RF2173 RF2173 800MHz 950MHz 203mm 330mm 025mm RF2173) IPC-SM-782 RF2174 030514

    RF2138

    Abstract: RF2140 SiGe BiCMOS transistor bias block generator shunt MICROSTRIP isolator space
    Text: RF2138 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Portable Battery-Powered Equipment • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible 3.50 3.35 sq. GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS


    Original     		PDF RF2138 MP16K01A RF2138 36dBm. 36dBm, RF2140 SiGe BiCMOS transistor bias block generator shunt MICROSTRIP isolator space

    RF2173

    Abstract: SiGe BiCMOS transistor bias block generator shunt RF2173PCBA D287B IPC-SM-782 RF2173PCBA-41X RF2174
    Text: RF2173 3V GSM POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description


    Original     		PDF RF2173 RF2173 800MHz 950MHz 203mm 330mm 025mm RF2173) SiGe BiCMOS transistor bias block generator shunt RF2173PCBA D287B IPC-SM-782 RF2173PCBA-41X RF2174