SGA8343z
Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343ZLow
SGA8343Z
OT-343
SGA8343Z
DS110620
SGA8343Z-EVB4
1575MHz
SGA-8343Z
CL10B104K
MCR03*J100
MCR03J242
MCR03J620
MCR03J
SOT343 lna
ROHM TRACE CODE
ROHM trace code of lot
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Untitled
Abstract: No abstract text available
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343Z
SGA8343ZLow
OT-343
SGA8343Z
DS110620
SGA8343Z-EVB4
1575MHz
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SGA-8343Z
Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343ZLow
SGA8343Z
OT-343
SGA8343Z
DS110205
SGA8343Z-EVB4
1575MHz
SGA-8343Z
samsung cl
SOT343 lna
MICROWAVE DEVICES
GaAs pHEMT LOW SOT-343
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SGA8343Z
Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to
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SGA8343Z
SGA8343ZLow
OT-343
SGA8343Z
DS100909
SGA8343Z-EVB4
1575MHz
MCR03*J102
SGA8343ZSR
SGA-8343Z
EVB1
1608-FS3N9S
lot code RFMD
MCH185A150J
MCR03J5R1
toko 10k series
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A83Z
Abstract: A83Z data a83 sot transistor A83 sga8343z SGA-8343 SGA-8343Z RFMD sga-8343Z 34A83
Text: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to
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SGA-8343
OT-343
SGA-8343Z
EDS-101845
SGA-8343
A83Z
A83Z data
a83 sot
transistor A83
sga8343z
SGA-8343Z
RFMD sga-8343Z
34A83
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samsung bluetooth
Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
Text: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to
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SGA-8343
OT-343
SGA8343ZPCK-EVB2
SGA8343ZPCK-EVB3
SGA8343ZPCK-EVB4
DS100111
samsung bluetooth
SGA8343Z
MCR03*J102
CL10B104KONC
SGA-8343Z
8343
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Untitled
Abstract: No abstract text available
Text: SGA-4300 SGA-4300DC4.5GHz, Cascadable SiGe HBT MMIC Amplifier DC-4.5GHZ, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: Bare Die Product Description Features The SGA-4300 is a high performance SiGe HBT MMIC Amplifier in die form 0.66mmx0.38mm . A Darlington configuration featuring 1 micron emitters provides high FT
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SGA-4300
SGA-4300DC4
SGA-4300
66mmx0
DS110603
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SGA-4300
Abstract: No abstract text available
Text: SGA-4300 SGA-4300DC4.5GHz, Cascadable SiGe HBT MMIC Amplifier DC-4.5GHZ, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: Bare Die Product Description Features The SGA-4300 is a high performance SiGe HBT MMIC Amplifier in die form 0.66mmx0.38mm . A Darlington configuration featuring 1 micron emitters provides high FT
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SGA-4300DC4
SGA-4300
SGA-4300
66mmx0
DS110603
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SGA-3563Z
Abstract: SGA-3500 SGA3563Z mems IR emitter
Text: SGA-3500DC5GHz, Cascadable SiGe HBT MMIC Amplifier SGA-3500 Preliminary DC-5GHZ, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: Bare Die CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied GaAs MESFET InGaP HBT Si BiCMOS
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SGA-3500DC5GHz,
SGA-3500
EDS-106319
SGA-3563Z
SGA-3500
SGA3563Z
mems IR emitter
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an 214 amp schematic diagram
Abstract: ROHM MCR03 ECB-101161
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT
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SPA2318ZLow
SPA2318Z
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
an 214 amp schematic diagram
ROHM MCR03
ECB-101161
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Untitled
Abstract: No abstract text available
Text: SGB2400 SGB2400DC to 4GHz Active Bias SiGe HBT MMIC Amplifier DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER Package: Bare Die Product Description Features RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry. The active bias network provides stable current over temperature and process Beta variations. The SGB2400 is designed to operate directly from a 3V supply. The
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SGB2400
SGB2400DC
SGB2400
DS120619
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5HP ibm
Abstract: 5HP ibm SiGe HBT sige hbt germanium transistors NPN IBM Microelectronics Tech MOS Technology Spiral Inductor technology SiGe POWER TRANSISTOR IBM SiGe
Text: IBM Microelectronics Blue Logic BiCMOS 5HP Technology SiGe BiCMOS process for high performance Highlights IBM Blue Logic BiCMOS 5HP is a unique and versatile process integrating a highperformance silicon germanium SiGe heterojunction bipolar transistor (HBT)
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07G522035300*
G522-0353-00
5HP ibm
5HP ibm SiGe HBT
sige hbt
germanium transistors NPN
IBM Microelectronics
Tech MOS Technology
Spiral Inductor technology
SiGe POWER TRANSISTOR
IBM SiGe
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25c2625
Abstract: ECB-101161 267M3502104
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT
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SPA2318ZLow
SPA2318Z
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
DS121024
25c2625
ECB-101161
267M3502104
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Untitled
Abstract: No abstract text available
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT
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SPA2318Z
SPA2318ZLow
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
the-9421
DS110720
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Untitled
Abstract: No abstract text available
Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier 2.94 min 3.28 max Pin 1 Indicator E S Lid ID 1.70 min 1.91 max 2.39 min 2.59 max W N E GaAs HBT Si Bi-CMOS SiGe HBT
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NBT-168
12GHz
NBT-168
12GHz.
NBT-168-D)
NBT-168)
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rfmd micro-x gaas
Abstract: No abstract text available
Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier 2.94 min 3.28 max Pin 1 Indicator E S Lid ID 1.70 min 1.91 max 2.39 min 2.59 max W N E GaAs HBT Si Bi-CMOS SiGe HBT
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NBT-168
12GHz
NBT-168
12GHz.
NBT-168-D)
NBT-168)
rfmd micro-x gaas
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toko 5c
Abstract: MCH18 MCR03 SPA-2318 TAJB106K020R SPA-2318Z
Text: SPA-2318 Z SPA-2318(Z) Low Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)
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SPA-2318
1700MHz
2200MHz
1960MHz
2140MHz
diPA-2318
SPA-2318
SPA-2318Z
toko 5c
MCH18
MCR03
TAJB106K020R
SPA-2318Z
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Untitled
Abstract: No abstract text available
Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VCC InGaP HBT N/C VBIAS SiGe BiCMOS Active Bias
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SPA1118Z
850MHz
SPA1118Z
106K020R
MCH18
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ECB-101161
Abstract: No abstract text available
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel
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SPA2318ZLow
SPA2318Z
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
DS111219
ECB-101161
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HBT 01 - 05
Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Text: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna
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90GHz,
90GHz
HBT 01 - 05
dr 25 germanium diode
HBT 01 05G
Silicon germanium Heterojunction Bipolar Transistor
GERMANIUM SMALL SIGNAL TRANSISTORS
poly silicon resistor
1lm2
0.18 um CMOS parameters
hbt 05
HBT 01 - 01 G
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SOT343 lna
Abstract: M2529
Text: Preliminary Product Description 35 30 25 20 2.1 1.8 1.5 1.2 NFMIN 15 10 Gain 5 1 0.9 0.6 Gmax 2 3 4 5 Frequency GHz NFMIN (dB) Gain, Gmax (dB) Sirenza Microdevices’ SGA-8343X is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT)
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SGA-8343X
SGA-8343X
EDS-103628
SOT343 lna
M2529
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a83z
Abstract: A83Z data SGA8343Z transistor A83 2.4 ghz passive rfid AN-044 bipolar transistor ghz s-parameter SGA-8343 SGA-8343Z SGA 8343Z
Text: SGA-8343 SGA-8343Z Product Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage
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SGA-8343
SGA-8343Z
SGA-8343
EDS-101845
a83z
A83Z data
SGA8343Z
transistor A83
2.4 ghz passive rfid
AN-044
bipolar transistor ghz s-parameter
SGA-8343Z
SGA 8343Z
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2.4 ghz passive rfid
Abstract: 185-AC SGA-8343 AN-044
Text: Preliminary Product Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides high
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SGA-8343
EDS-101845
2.4 ghz passive rfid
185-AC
AN-044
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8543
Abstract: 2.4 ghz passive rfid Z1 SOT343 EDS-102583
Text: Advanced Information Product Description Sirenza Microdevices’ SGA-8543 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides low
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SGA-8543
SGA-8543
8543
2.4 ghz passive rfid
Z1 SOT343
EDS-102583
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