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    SIGNETICS 82S137 Search Results

    SIGNETICS 82S137 Datasheets Context Search

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    MB7052

    Abstract: MB7051 MB7122 27s49 MB7057 27S19 27s13 PROM intel 3601 MB7058 MB7053
    Text: TTL/Bipolar PROM / RAM Reference Guide V2.f3 TS = Tri-State output OC = Open Collector output Hacked, copied, edited and extended by W.G. to give it a decent shape and handy booklet form The main part is extracted from


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    PDF --uPB410 ------MB7051 uPB400 MB7056 ----P3106 27S01 P3107 82S16 82S116 82S06 MB7052 MB7051 MB7122 27s49 MB7057 27S19 27s13 PROM intel 3601 MB7058 MB7053

    74S471

    Abstract: mmi 6331 74S287 MMI 6330 74s188 programming AMD 27S21 MMI 6309 6306 MMI 74S188 74S288 PROGRAMMING
    Text: V1.6 Jan 13,1999 Fujitsu -7051 7052 7053 7057 7111 32x8 7112 32x8 7113 256x4 7114 256x4 7115 512x4 7116 512x4 7117 256x8 7118 256x8 7121 1kx4 7122 1kx4 7123 512x8 7124 512x8 7126 7127 7128 2kx4 7131 7132 1kx8 7134 4kx4 7137 2kx8 7138 2kx8 7142 4kx8 7144 8kx8


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    PDF 256x4 512x4 256x8 512x8 7647R 82s23 74S471 mmi 6331 74S287 MMI 6330 74s188 programming AMD 27S21 MMI 6309 6306 MMI 74S188 74S288 PROGRAMMING

    2650B

    Abstract: wf vqc 10d alu 9308 d Signetics 2650 SN52723 2650 cpu 82S103 pipbug Signetics NE561 cd 75232
    Text: flcnCTICf ßii>ouiR/mos fflICROPROCEÍSOR DATfl mnnuni SIGNETICS reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible products. Signetics also assumes no responsibility for the


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    SIGNETICS prom

    Abstract: No abstract text available
    Text: Signetics 82S137A 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products DESCRIPTION Th e 82S 137A is field-program m able, which m eans that custom patterns are im m ediately available by following the Signetics G eneric I fusing procedure. The 8 2 S 1 3 7 A is supplied with all outputs at


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    PDF 82S137A -150nA SIGNETICS prom

    Untitled

    Abstract: No abstract text available
    Text: Philips Components-Signetics Document No. 853-0145 ECN No. 86487 Date of Issue November 11,1986 Status Product Specification 82S137 4K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S137 is field programmable, which means that custom patterns are


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    PDF 82S137 82S137 750SJ,

    E204

    Abstract: No abstract text available
    Text: Philips Components-SIgnetics 82S137 Document No. 853-0145 ECN No. 86487 Date of Issue November 11,1986 Status Product Specification 4K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S137 is field programmable, which means that custom patterns are


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    PDF 82S137 82S137 E204

    N82S137N

    Abstract: 82S137 N82S137 4k prom
    Text: Philips Components-Signetics Document No. 853-0145 ECN No. 86487 Date of Issue November 11, 1986 Slatus Product Specification 82S137 4K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S137 is field programmable, which means that custom patterns are


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    PDF 82S137 750SJ, N82S137N N82S137 4k prom

    N82S137N

    Abstract: No abstract text available
    Text: Philips Components-Signetics Document No. 853-0145 ECN No. 86487 Date of Issue November 11, 1986 Slatus Product Specification 82S137 4K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S137 is field programmable, which means that custom patterns are


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    PDF 82S137 82S137 82S1S137 750SJ, N82S137N

    Signetics 82S137

    Abstract: No abstract text available
    Text: 82S137 Signetics 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Spécification DESCRIPTION FEATURES APPLICATIONS Th e 8 2 S 1 3 7 is field-program m able, which • Address access time: 70ns max • Sequential controllers • Input loading: -150nA max


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    PDF 82S137 -150nA Signetics 82S137

    82hs189

    Abstract: 54LS154 82HS187 OT27C256 27c64 signetics 54175 82HS641 sreg BDA BFA BKA 54S20
    Text: Signetics I Product Listing of I Contents of I Volume 2 Military Products I The following is a list of products whose data sheets are available in the Military Products Handbook, Volume 2. SECTION 1: ERASABLE PROM PRODUCTS Part Number Device Description Device


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    PDF 27C512/BXA-20 27C512/BXA-25 27C256/BXA-20 27C256/BXA-25 27C256/BXA-30 27C256/BUA-20 27C256/BUA-25 32KX8 82hs189 54LS154 82HS187 OT27C256 27c64 signetics 54175 82HS641 sreg BDA BFA BKA 54S20

    bipolar PROM

    Abstract: plhs18p8 S4LS04 82HS641 PLHS18 54175 82s137a 82S191 68172 54F04
    Text: Signetics I Alphanumeric I Index Military Products H LM119 LM124 LM139 Vol. 1 17 Dual Voltage Comparator Vol.2 22 26 26 Low Power Quad Op Amp LM139A Qual Voltage Comparator Qual Voltage Comparator PLC18V8Z Zero Standby Power Universal PAL -Type Device PLC415


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    PDF LM119 LM124 LM139 LM139A PLC18V8Z PLC415 PLHS18P8A PLHS473 PLHS501 PLS105 bipolar PROM plhs18p8 S4LS04 82HS641 PLHS18 54175 82s137a 82S191 68172 54F04

    N82S137BA

    Abstract: No abstract text available
    Text: Philips Components-Signetics Document No. 8 5 3 -0 1 2 8 ECN No. 864 8 7 Date of Issue N ove m b e r 11, 1986 82S137A 82S137B Status P ro du ct S p ecification 4K-bit TTL bipolar PROM M em ory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 8 2 S 1 3 7 A and 82S 13 7 B are field


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    PDF 82S137A 82S137B N82S137A N82S137B 750S1, N82S137BA

    74S387

    Abstract: 74s288 74S474 74S188 MMI 6381 74S287 27ls09 74S209 MMI 6349 74s201
    Text: Signetics Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A 93417


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    PDF 82S16 2701/27LS01 82S17 27S08/27LS0Ã 82S23 27S09/27LS09 82S123 27S10 82S126 27S11 74S387 74s288 74S474 74S188 MMI 6381 74S287 27ls09 74S209 MMI 6349 74s201

    diode LT 42 PR 3002

    Abstract: 5603A intersil b34 DIODE schottky ic 74s201 mmi 6331 74s188 74S474 74S288 FU 3024 82s141
    Text: Signetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Introduction S c h o ttk y T T L uses a d io d e cla m p design to ensure th e highest speed possible at T T L lo g ic levels ty p ic a lly 3ns gate p ro p a g a tio n de la y and 9 0 M H z f lip f lo p to g gle rate. H o w ever th e y rem ain c o m p a tib le w ith


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    PDF N74S00N 55376D N74S02N 55377B N74S03N 55378X N74S04N 55379R N74S05N 5380A diode LT 42 PR 3002 5603A intersil b34 DIODE schottky ic 74s201 mmi 6331 74s188 74S474 74S288 FU 3024 82s141

    N82S181

    Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.


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    PDF 8192-BIT 1024x8) 82S180 /82S181 82S180 82S181 N82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330

    6301-1 prom

    Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
    Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g


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    PDF 8192-BIT 1024x8) 82HS181/82HS181A 82HS181 N82HS185 N82S25 N82S16 TBP18SA030J, 6301-1 prom 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137

    IC 74187

    Abstract: lt 6246 MMI 6330 74s188 ic 74s201 6301-1 prom HARRIS 8249 mmi 6331 82S2708 74S288
    Text: Siginetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Cont. TYPE NO. N74S260N N74S280AN N74S287N N74S288N N74S289N DE SC R IPTIO N Dual 5 -ln p u t N O R Gate 9 -B it O dd/E ven P arity G enerator/Checker . 102 4-B it Prom -3 State? o /p


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    PDF N74S260N 55616D N74S280AN S5617B N74S287N 1024-Bit 55618X N74S288N 256-Bit 55619R IC 74187 lt 6246 MMI 6330 74s188 ic 74s201 6301-1 prom HARRIS 8249 mmi 6331 82S2708 74S288

    N82S137F

    Abstract: N82S136 82S137 82S136 N82S136F N82S137 SIGNETICS prom 2.1 connection diagram
    Text: S ig n e tic s Memories - Bipolar Proms N82S136, N82S137 — 4096 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 1 3 6 and 8 2 S 1 3 7 are field programmable. The standard 8 2 S 1 3 6 and 8 2 S 1 3 7 are supplied w ith all outputs


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    PDF N82S136, N82S137 82S136 82S137 N82-S136/137, N82S137F N82S136 N82S136F N82S137 SIGNETICS prom 2.1 connection diagram

    74s288

    Abstract: SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349
    Text: S ig n e tic s Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A


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    PDF 82S16 2701/27LS01 82S17 27S08/27LS0Ã 82S23 27S09/27LS09 82S123 27S10 82S126 27S11 74s288 SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349

    N82S141

    Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­


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    PDF 8192-BIT 2048x4) 82HS185/82HS185A 82HS185 N82HS185 N82S25 N82S16 TBP18SA030J, N82S141 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C

    N82S137

    Abstract: 82S137 S82S137 825137 N82S137A N82S137F n8281 S82S137A 4096-BIT Signetics 82S137
    Text: BIPOLAR M EM O RY DIVISION MAY 1982 4096-BIT BIPOLAR PROM 1024x4 82S137 (T.S.) DESCRIPTION FEATURES T h e 82S 137 is fie ld p ro g ra m m a b le , w h ic h • Address access time: N82S137: 60ns max S82S137: 80ns max • Power dissipation: .13m W /bit typ


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    PDF 4096-BIT 1024x4) 82S137 82S137 N82S137, N82S137 S82S137 N82S137 S82S137 825137 N82S137A N82S137F n8281 S82S137A Signetics 82S137

    N82S185

    Abstract: N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601
    Text: BIPOLAR M E M O R Y M AY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTIO N FEATURES T h e 82S 185 is fie ld p ro g ra m m a b le , w h ic h


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    PDF 8192-BIT 2048x4) 82S185 82S185 N82S185, N82HS185 N82S25 N82S16 N82S185 N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601

    6301-1 prom

    Abstract: MMI 6301-1 93427C 6331-1 MMI 6341-1 dm74s472 PROM intel 3601 DM74S570 MMI 6330 N82S23
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 82HS195 T.S. 16,384-BIT BIPOLAR PROM (4 0 9 6 x 4 ) A d v a n c e Inform ation DESCRIPTION FEATURES The 82H S 19 5 is fie ld p ro g ra m m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s are im m e d i a te ­


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    PDF 384-BIT 4096x4) 82HS195 82HS195 93427C N82S129 93436C N82S130 6301-1 prom MMI 6301-1 6331-1 MMI 6341-1 dm74s472 PROM intel 3601 DM74S570 MMI 6330 N82S23

    74S472

    Abstract: 74ls471 27S25 18S030 24s10 28S42 74S188 74S474 24SA10 87s185
    Text: PROM P a rt Number Cross-Reference IW f\D x ;x 00 3-4 Memory Description Output Organization Pins 16 1K 256X4 16 2K 256X8 20 2K 512X4 16 OC TS OC TS OC TS TS OC TS OC 20 24 24 18 OC TS TS OC TS Fairchild Fujitsu — — — — - - - - - — 7620 7621 7620


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    PDF 512x8 4096X 63S080 63S081/A 63S140 63S141/A 63S281/A 63S240 63S241/A 63S481/A 74S472 74ls471 27S25 18S030 24s10 28S42 74S188 74S474 24SA10 87s185