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    SILICON Search Results

    SILICON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    5962-8757701RA Renesas Electronics Corporation Microcircuit, CMOS, Octal Bus Transceiver, Monolithic Silicon Visit Renesas Electronics Corporation
    HXT45430-DNU Renesas Electronics Corporation 112Gb/s PAM4 Silicon Photonic Modulator Driver Visit Renesas Electronics Corporation
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    SILICON Price and Stock

    Crouzet 838030SILICON

    SWITCH LIMIT SPDT
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    3M Interconnect SILICONE-SPRAY-CA

    SILICONE SPRAY LOW VOC 60% NET W
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    Microchip Technology Inc SILICON-SCULPTOR_3

    PROGRAMMER PRODUCTION USB 2.0
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    Microchip Technology Inc SILICON-SCULPTOR_4

    PROGRAMMER
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    Newark SILICON-SCULPTOR_4 Bulk 1
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    Onlinecomponents.com SILICON-SCULPTOR_4
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    NAC SILICON-SCULPTOR_4 1
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    Microchip Technology Inc SILICON-EXPLORER-II

    SOFTWARE ANALYSIS EXPLORER LOGIC
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    SILICON Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    07N70CP-A Silicon Standard N Channel Enhancement mode Power MOSFET Original PDF
    07N70CR-A Silicon Standard N Channel Enhancement mode Power MOSFET Original PDF
    100-00023-01 Silicon Designs TEST BOARD ACCELEROMETERS Original PDF
    1000-TCB1C470 Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVALUATION FOR SI1000 Original PDF
    1000-TCB1C915 Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVALUATION FOR SI1000 Original PDF
    1002-TCB1D434 Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVALUATION FOR SI1002 Original PDF
    1002-TCB1D868 Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVALUATION FOR SI1002 Original PDF
    1004-TCB1D434 Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVALUATION FOR SI1004 Original PDF
    1004-TCB1D868 Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVALUATION FOR SI1004 Original PDF
    100S Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    100U Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    1010J-005 Silicon Designs Accelerometer, Capacitive Digital, ±5g Acceleration, 5V Supply Original PDF
    1010J-010 Silicon Designs Accelerometer, Capacitive Digital, ±10g Acceleration, 5V Supply Original PDF
    1010J-025 Silicon Designs Accelerometer, Capacitive Digital, ±25g Acceleration, 5V Supply Original PDF
    1010J-050 Silicon Designs Accelerometer, Capacitive Digital, ±50g Acceleration, 5V Supply Original PDF
    1010J-100 Silicon Designs Accelerometer, Capacitive Digital, ±100g Acceleration, 5V Supply Original PDF
    1010J-200 Silicon Designs Accelerometer, Capacitive Digital, ±200g Acceleration, 5V Supply Original PDF
    1010L-002 Silicon Designs DIGITAL ACCELEROMETER Original PDF
    1010L-005 Silicon Designs DIGITAL ACCELEROMETER Original PDF
    1010L-005 Silicon Designs Accelerometer, Capacitive Digital, ±5g Acceleration, 5V Supply Original PDF
    ...

    SILICON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC4030BP/BF/BFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tran^riRP Tran^fiRF Trzin^nRFM • ^ w » . g ■ ^ w » . f ■ 'w ■■ - - Note The JEDEC SOP (FN) is not available in TC4030B QUAD EXCLUSIVE - OR GATE Japan. TC4030B contains four circuits of exclusive OR gates. Since


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    PDF TC4030BP/BF/BFN TC4030B 14PIN DIP14-P-300-2 14PIN 200mil OP14-P-300-1

    2sc3310

    Abstract: No abstract text available
    Text: 2SC3310 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm SW ITCH IN G REGULATOR A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. HIGH SPEED D C-DC CONVERTER APPLICATIONS. • • Excellent Switching Times : tr =1.0//s (Max.), tf=1.0/us (Max.) at Iç = 4A


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    PDF 2SC3310 2sc3310

    7S47

    Abstract: TD62308BP N/7S47
    Text: TOSHIBA-, ELECTRONIC D2 TD62308BP TD62308BP D eT| T O T 7547 OQlûTMS ñ | T-52-13-01 BIPOLAR DIGITAL INTEGRATED CIRCUI I SILICON MONOLITHIC LOW INPUT ACTIVE 1.5A DRIVER Unit in nun Features . Output Current. 1.5A Max. . High Sustaining Voltage.


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    PDF TD62308BP TD62308BP T-52-13-01 50/is, 7S47 N/7S47

    C 34 F

    Abstract: 1SV274 D234
    Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package


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    PDF 1SV274 C25V/C28V 470MHz C 34 F 1SV274 D234

    MP4007

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR 4 IN 1 MP4007 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2 ± 0.2 LOAD SWITCHING. . Small Package by Full Molding. (SIP 10 Pin) . High Collector Power Dissipation.


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    PDF MP4007 Ta-25 MP4007

    toshiba p300

    Abstract: kd qa
    Text: INTEGRATED T O SH IB A 8 -B IT CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74ACT299P/F/FW DATA SILICON MONOLITHIC PIPO SHIFT REGISTER WITH ASYNCHRONOUS CLEAR The TC74ACT299 is an advanced high speed CMOS 8-BIT PIPO SHIFT REGISTER fabricated with silicon gate and


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    PDF TC74ACT299P/F/FW TC74ACT299 20PIN 20PIN 300mil 685TYP toshiba p300 kd qa

    TC74AC373

    Abstract: No abstract text available
    Text: INTEGRATED T O SH IB A CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74AC37BP/F/FW/FS DATA SILICON MONOLITHIC OCTAL D -TYP E LATCH WITH 3 -STATE OUTPUT The TC74AC373 is an advanced high speed CMOS OCTAL LATCH with 3 - STATE OUTPUT fabricated with silicon


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    PDF TC74AC37BP/F/FW/FS TC74AC373 20PIN 300mil 685TYP 20PIN

    YTF822

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSn YTF822 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. 03.6±O.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance


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    PDF YTF822 20kXi) YTF822

    TC4538

    Abstract: No abstract text available
    Text: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4538BP/BF TC4538BP/TC4538BF DUAL PRECISION RETRIGGERABLE/RESETTABLE MONOSTABLE MULTIVIBRATOR The TC4538BP/BF is the retriggerable/resettable monostable multivibrator and the trigger operation can be made at either the leading or trailing edge by


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    PDF TC4538BP/BF TC4538BP/TC4538BF TC4538BP/BF TC4528B, 100ka, TC4538

    2N718

    Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
    Text: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for


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    PDF 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, 2N150J. 2N1613. 2N718 SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613

    2SD1294

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain


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    PDF 2SD1294 2SD1294

    74ALS05

    Abstract: diode sy 106 diode sy 180 10
    Text: TOSHIBA TENTATIVE TC74VHC05F/FN/FT TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC05F, TC74VHC05FN, TC74VHC05FT HEX INVERTER OPEN DRAIN _ The TC74VHC05 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.


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    PDF TC74VHC05F/FN/FT TC74VHC05F, TC74VHC05FN, TC74VHC05FT TC74VHC05 TC74VHC04, 74ALS05 diode sy 106 diode sy 180 10

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2 ,0 9 7 ,1 5 2 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst


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    PDF TC55V2325FF-100 TC55V2325FF 64KX32 LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC4040BP/BF/BFN TO SH IBA CM OS DIG ITAL INTEGRATED CIRCUIT T r A flA flR P • m g ■ ^mf TTZLiMflRF m bmt ■ TC4040B 12 STAGE RIPPLE-C A R R Y BINARY COUNTER/DIVIDERS SILICON M ONOLITHIC g TrZLilZLORFM m ■ ^mf ■ m f ■ ■ v Note The JEDEC SOP (FM) is not available in


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    PDF TC4040BP/BF/BFN TC4040B 16PIN DIP16-P-300-2 16PIN 200mil OP16-P-300-1

    Untitled

    Abstract: No abstract text available
    Text: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF TA4000F 700MHz 400MHz 400MHz) 1000pF IS22I

    MG100Q2YS1

    Abstract: No abstract text available
    Text: GTR MODULL SILICON N CHANNEL IGBT MG100Q2YS1 HI GH POWER S WIT C H I N G A P P L I C A T I O N S . Unit M O T O R C ONT R O L A P P L I C A T I O N S . in m m • High Input Impedance • High Speed : t f =0. 5fis Max. t r r = 0 . 5 (is ( M a x . ) •Low Saturación Voltage:


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    PDF MG100Q2YS1 MG100Q2YS1

    2sc2824

    Abstract: 2SA1184
    Text: TOSHIBA íDISCRETE/OPTOJ Ib DE I TDTTESD a007Etob M |~~ Y ' 9097250 T O SH IB A DISCRETE/ OP TO 56C 07266 ' D JT- 3 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) S 2 A 1 1 8 4 Unit in mra AUDIO FREQUENCY POWER A M P L I F I E R APPLICATION S. 7.9 MAX. ^3.1d-Ql5


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    PDF a007Etob 2SC2824. 2SA1184 2sc2824 2SA1184

    2SK578

    Abstract: 2SK57
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK578 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR APPLICATIONS. #3,3±Q.2 FEATURES: . Low Drain-Source ON Resistance


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    PDF 2SK578 0-22n 0-a25 2SK578 2SK57

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature


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    PDF 1SS315

    MG400 TOSHIBA

    Abstract: No abstract text available
    Text: TOSHIBA MG400Q1US51 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG400 1 US51 HIGH P O W ER SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • H igh Input Impedance H ighS peed : tf= 0.3/;s Max. Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


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    PDF MG400Q1US51 MG400 MG400 TOSHIBA

    2SD819

    Abstract: No abstract text available
    Text: 2SD819 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit In mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0S5.OMAX. FEATURES: eteLOMAX. • High Voltage :V c b q =1500V . Low Saturation Voltage :VcE sat =4V (Typ.) + 0.09 4.0— 0.03 (IC=3A, IB=0.8A) • High Speed


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    PDF 2SD819 AC42C 2SD819

    diode SS 3

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


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    PDF 2SK2699 diode SS 3

    diode E155

    Abstract: mig20j
    Text: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.


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    PDF MIG20J906E/EA MIG20J906E, MIG20J906EA MIG20J906E 2-108E5A 2-108E6A o--------Bo40- 80Ilo 961001EAA1 diode E155 mig20j

    T500mA

    Abstract: No abstract text available
    Text: TD62107F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62107F DARLINGTON DRIVER WITH ENABLE_ The T D 6 2 1 0 7 F is c omprised of four NPN d a rlington output stages and enable inputs w h i c h can gate the outputs. All o u t p u t s feature integral c lamp diodes for s w i t c h ­


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    PDF TD62107F TD62107F 750mA T500mA