Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
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nj TRANSISTOR
Abstract: 450KW
Text: 3mm Silicon PNP Photo Transistor Dialight 551-7610 1.57 [.062] 4.32 [.170] 7.11 .280 Features 6.35 [.250] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability 3.00 [.118] DIA. 5.08 [.200]
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MIL-STD-202E,
nj TRANSISTOR
450KW
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nj TRANSISTOR
Abstract: No abstract text available
Text: NEW 3mm Infrared Discrete LED Silicon PNP Photo Transistor Dialight 521-9740 Features 5.18 [.204] 4.09 [.161] .79 [.031] .61 [.024] SQ. .71 [.028] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability
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MIL-STD-202E,
nj TRANSISTOR
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S268P
Abstract: No abstract text available
Text: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant
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S268P
S268P
D-74025
15-Jul-96
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W6NRD0X-0000
Abstract: W4NRE0X-0D00 W4TRD0R-0D00 1E-18 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8C-S000 W4NXD8D-0000 W4NXD8D-S000
Text: Effective December 1998 • Revised March 2003 • Page 1 Silicon Carbide Substrates Product Specifications 4H Silicon Carbide n/p-type 6H Silicon Carbide (n/p-type) Page 2 • Effective December 1998 • Revised March 2003 Properties and Specifications for
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Silicon Motion sm501
Abstract: No abstract text available
Text: Silicon Motion, Inc. SM501 Mobile Multimedia Companion Chip Databook Version 1.02 Silicon Motion , Inc. Company Confidential SM501 MMCC Databook Silicon Motion , Inc. ® SM501 MMCC Databook Chip Versions This document is applicable to revision AA of the SM501 first production part .
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SM501
SM501
Silicon Motion sm501
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Untitled
Abstract: No abstract text available
Text: C8051F39x/F37x UDP C8051F390/F370 MCU C A R D U SER ’ S G UIDE 1. Introduction The Unified Development Platform UDP provides a development and demonstration platform for Silicon Laboratories microcontrollers and the Silicon Laboratories software tools, including the Silicon Laboratories
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C8051F39x/F37x
C8051F390/F370
C8051F39x/F37x
C8051F39x
C8051F37x
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CD 8403
Abstract: S268P
Text: TELEFUNKEN Semiconductors S 268 P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides
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S268P
D-74025
CD 8403
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transistor marking T79 ghz
Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority
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PU10015EJ04V0PF
transistor marking T79 ghz
marking code C1H mmic
marking code C3E SOT-89
upb1507
marking code C1G mmic
marking code C1E mmic
data book transistors 2SA
uPC2712
pc3215
transistor 2SA data book
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c 3198 transistor
Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
Text: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed
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----2N6384
2N6385
c 3198 transistor
2N6383
IC 6648
2N6648
sc 3198 transistor
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MEL78D
Abstract: No abstract text available
Text: MEL78D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL78D is NPN silicon planar phototransistor with 3mm dimeter light 0.124 rejective filter epoxy package. It features ultra high, illumination sensitivity and fast response time. 5*3 (0.21) » . 1.0(0.04)-!
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MEL78D
CHARACTER260Â
100/xA
100/iA
of2354Â
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Untitled
Abstract: No abstract text available
Text: CRO MEL78D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL78D transistor rejective features sensitivity «>3 . 15< 0. 12-4> is NPN silicon planar photowith 3mm dimeter light filter epoxy package. It ultra high. illumination and fast response time. 1.0 0.04 >
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MEL78D
MEL78D
100/xA
100/i
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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transistor 0117
Abstract: MDL82
Text: MDL82 NPN SILICON PHOTO DARLINGTON TRANSISTOR DESCRIPTION « .9 7 • 0.117 MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. It features ultra high illumination
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MDL82
100jtiA
100ohm
6S477
transistor 0117
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Untitled
Abstract: No abstract text available
Text: 45E D EDAL INDUSTRIES INC m 3mS?lti 0G0054A fi • EDL SILICON HIGH L VOLTAGE CARTRIDGE S E R IE S -g - * l " - 1 1 ' ^ □ Series L high voltage silicon rectifiers are designed for applications requiring minimum size combined with
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ntr-11:
15CTC
0D0054Ã
Marchi986
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Untitled
Abstract: No abstract text available
Text: DESCRIPTION CRO MEL85 NPN SILICON PHOTO TRANSISTOR MEL85 is NPN silicon planar photo transistor. It is encapsulated in a 3mm diameter, low profile and flat top type water clear transparent epoxy package. It features ultra high illumination sensitivity, fast response time.
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MEL85
MEL85
May-99
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MEL82
Abstract: MI38T
Text: NPN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 M EL82 is NPN silicon p lanar ph o to transistor. It is encapsulated in a 3m m diam eter, low profile and r 4*1 • (0.16) flangeless water clear transparent epoxy package. It features sensitivity,
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MEL82
MI38T
20mW/cm2
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h004
Abstract: MEL708
Text: CRO MEL708 iNPN SILICON PHOTO TRANSÌSTOR DESCRIPTION MEL708 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.
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MEL708
H0-04)
MEL708
MEL708-A
1000Q
Nov-99
h004
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MEL708
Abstract: No abstract text available
Text: CKO / u o NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL708 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.
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MEL708
100mA
200mW
MEL708
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MEL78D
Abstract: No abstract text available
Text: DESCRIPTION M E L 78D transistor rejective features sensitivity CRO is NPN silicon planar photowith 3mm dim eter light filter epoxy package. It ultra high. illum ination and fast response time. <°-124> n 5.3 • • NPN SILICON PHOTO TRANSISTOR A,ì dimension in mm incb
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MEL78D
100itA
100/iA
of2354Â
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MEL82
Abstract: MI38T
Text: CRO MEL82 N PN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 MEL82 is NPN silicon planar photo transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / 4*.1 • (0.16) 0.75(0.03)_ max. It features ultra high illumination
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MEL82
MI38T
20mW/cm3
100ohm
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Untitled
Abstract: No abstract text available
Text: 3mm Silicon PNP Photo Transistor n Ìn lm U l I m a iig n r • 551-7610 1.57 062] [. Features 6.35 250 ] - -[. • • • • • ± 3.00 [. 118] DIA. T 3.67 149] Silicon PNP type transistor Narrow acceptance angle Daylight filtered Good linearity High reliability
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450kW
MIL-STD-202E,
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MEL708-S
Abstract: No abstract text available
Text: CRO DESCRIPTION MEL708-S NPN SILICON PHOTO TRANSISTOR -2.9 0.11 MEL708-S is NPN silicon photo transistor with external base connection and built in a standard T-l (3mm) water clear package. T .3(0.16) p —0.5(0.019) —3.1(0.12) 1.0(0.039) A 3 .25 /0 .12)
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MEL708-S
MEL708-S
Jun-1999
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PF42
Abstract: SFM309 SFH309P-2 SFM309P
Text: SFH309P DAYUGHT FILTER SFH309PF SIEMENS SILICON NPN PHOTOTRANSISTOR FE AT U R ES DESCRIPTION • Silicon NPN Phototransistor In Epitaxial Planar Technology The SFH309P/309PF are silicon NPN phototransistors in a standard T1 3 mm plastic package. The SFH309PF has a black daylight filter.
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SFH309P
SFH309PF
SFH309P:
SFH309PF:
SFH487P
SFH309P/309PF
itivity-SFH309P
itivity-SFH309PF
SFH309FVPF
PF42
SFM309
SFH309P-2
SFM309P
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