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    SILICON CONTROLLED RECTIFIED Search Results

    SILICON CONTROLLED RECTIFIED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    FSASF214E2 Amphenol Communications Solutions Mini SAS, High Speed Input Output Connector, 1X2 CAGE ASSY 0 DEG NO SCR Visit Amphenol Communications Solutions
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    SILICON CONTROLLED RECTIFIED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    306-803

    Abstract: 2N3819 application 741 opamp 2N3819 Application Note 2N3819 transistor 2N3819 opamp 741 RS 305-636
    Text: Issued November 1983 J2983 Electronic attenuator Stocknumber 306-803 A silicon monolithic gain controlled A.C. amplifier programmed by an external D.C voltage or resistor. Applications include remote volume controls, speech compressors and expandor circuits. The device is


    Original     		PDF J2983 100mV 2N3819 306-803 2N3819 application 741 opamp 2N3819 Application Note transistor 2N3819 opamp 741 RS 305-636

    Untitled

    Abstract: No abstract text available
    Text: 1N4153, Silicon Switching Diode 1N4150 Applications DO-35 Glass Package 1N4153-1 Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality


    Original     		PDF 1N4153, 1N4150 DO-35 1N4153-1 LL-34/35 Mil-S-19500/337 031-A

    SS34 smc

    Abstract: SS34 SS36 single phase half controlled rectifier
    Text: SS3 Series Controlled Avalanche Power Diodes Features: • For surface mounted application. • Metal to silicon rectifier, majority carrier conduction. • Low forward voltage drop. • Easy pick and place. • High surge current capability. • Epitaxial construction


    Original     		PDF SMC/DO-214AB SS34 smc SS34 SS36 single phase half controlled rectifier

    1N4153-1

    Abstract: 337 SMD 1N4150 1N4153
    Text: 1N4153, Silicon Switching Diode 1N4150 Applications DO-35 Glass Package 1N4153-1 Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality


    Original     		PDF 1N4153, 1N4150 DO-35 1N4153-1 LL-34/35 Mil-S-19500/337 031-A 1N4153-1 337 SMD 1N4150 1N4153

    1N4153

    Abstract: 337 SMD 1N4153-1
    Text: Silicon Switching Diode Applications 1N4153, 1N4153-1 DO-35 Glass Package Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality Metallurgically bonded


    Original     		PDF 1N4153, 1N4153-1 DO-35 LL-34/35 Mil-S-19500/337 031-A 1N4153 337 SMD 1N4153-1

    ss14 do-214ac

    Abstract: ss14 do-214ac sma 39 do-214ac SS110 SS14 SS16 SS14 application notes
    Text: SS1 Series Controlled Avalanche Power Diodes Features: • • • • • • • For surface mounted application. Metal to silicon rectifier, majority carrier conduction. Low forward voltage drop. Easy pick and place. High surge current capability. Epitaxial construction.


    Original     		PDF SMA/DO-214AC ss14 do-214ac ss14 do-214ac sma 39 do-214ac SS110 SS14 SS16 SS14 application notes

    Untitled

    Abstract: No abstract text available
    Text: \Pioauaii, Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 2N1600 SILICON PNPN CONTROLLED RECTIFIER maximum ratings — all temperatures Indicated are stud temperatures VFI,I) V, I, lf i,


    Original     		PDF 2N1600 Voltage-65 D-554 10HOUE

    NTE517

    Abstract: HIGH VOLTAGE Rectifier for microwave ovens silicon controlled rectified
    Text: NTE517 Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven Features: D Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power D Low Forward Voltage Drop D Typical IR less than 0.1A D High Overload Surge Capacity


    Original     		PDF NTE517 5000V 0500V 18C/W 10sec) NTE517 HIGH VOLTAGE Rectifier for microwave ovens silicon controlled rectified

    CI 4026

    Abstract: 1N4150 1N4150-1 4031-A diode 1n4150
    Text: Silicon Switching Diode 1N4150 DO-35 Glass Package 11NNor1 or 1N4150-1 1N Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality Metallurgically bonded


    Original     		PDF 1N4150 DO-35 11NNor1 1N4150-1 LL-34/35 Mil-S-19500/231 031-A CI 4026 1N4150 1N4150-1 4031-A diode 1n4150

    1N4148UR-1

    Abstract: DO-213AA mini-melf-smd
    Text: MINI-MELF-SMD Silicon Diode 1N4148UR-1 Applications Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. LL-34/35 MINI MELF Features Surface Mount Package DO-213AA Six sigma quality


    Original     		PDF 1N4148UR-1 LL-34/35 DO-213AA DO-35 Mil-S-19500/116 1N4148UR-1 DO-213AA mini-melf-smd

    SCR gate drive circuit

    Abstract: NXL0840
    Text: NXL0840 SCR logic level Rev. 01 — 26 February 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate Silicon-Controlled Rectifier SCR in a SOT54 plastic package 1.2 Features • Direct interfacing to logic level ICs


    Original     		PDF NXL0840 sym037 NXL0840 771-NXL0840 SCR gate drive circuit

    scr C232

    Abstract: types of scr packages scr C230 C230-C232 SCR TRIGGER PULSE scr c231 C230C C231C C231-C233 SCR 406 C232
    Text: Silicon Controlled Rectifier C230-C232 C231-C233 2 5 ARMS TO 6 0 0 VOLTS The Silicon Controlled Rectifier C230/C232 is a reverse blocking triode thyristor designed for power switching and control circuits for high volume light industrial and consumer applications.


    OCR Scan     		PDF C230-C232 C231-C233 C230/C232 C231/C233 -X123 C230BX123. scr C232 types of scr packages scr C230 SCR TRIGGER PULSE scr c231 C230C C231C C231-C233 SCR 406 C232

    types of scr packages

    Abstract: SCR 131- 6 W 49 General electric SCR manual General electric SCR SCR Manual, General electric transformer 220 volts 60 Hz specifications thyristor SCR 406 Silicon Controlled Rectifier Manual universal MOTOR speed control using scr "scr manual"
    Text: Silicon Controlled Rectifier 35 A RM S C228 C229 50 TO 600 VOLTS The Silicon Controlled Rectifier C228/C229 is a reverse blocking triode thyristor. This SCR is a hermetically sealed device which incorporates General Electric’s patented POWERGLAS process that improves upon normal pellet passivation techniques. It provides an


    OCR Scan     		PDF C228/C229 -X123 C228BX123. types of scr packages SCR 131- 6 W 49 General electric SCR manual General electric SCR SCR Manual, General electric transformer 220 volts 60 Hz specifications thyristor SCR 406 Silicon Controlled Rectifier Manual universal MOTOR speed control using scr "scr manual"

    Silicon Controlled Rectifier Manual

    Abstract: types of scr packages General electric SCR manual "scr manual" scr 60 amps 800 volts SCR Manual, General electric universal MOTOR speed control using scr scr manual SCR TRIGGER PULSE 3 phase C229
    Text: C228 C229 Silicon Controlled Rectifier 35 A RM S 50 TO 600 VOLTS The Silicon Controlled Rectifier C228/C229 is a reverse blocking triode thyristor. This SCR is a hermetically sealed device which incorporates General Electric’s patented POWERGLAS process that improves upon normal pellet passivation techniques. It provides an


    OCR Scan     		PDF C228/C229 Silicon Controlled Rectifier Manual types of scr packages General electric SCR manual "scr manual" scr 60 amps 800 volts SCR Manual, General electric universal MOTOR speed control using scr scr manual SCR TRIGGER PULSE 3 phase C229

    BAX12

    Abstract: No abstract text available
    Text: • bb53^31 0D2b3b0 562 « A P X N AMER P H I L I P S / D I S C R E T E b'iE BAX12 T> SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable o f absorbing transients repetitively. It is a fast, controlled avalanche diode, intended for switching inductive loads e.g. in semi-electronic telephone


    OCR Scan     		PDF BAX12 DO-35 bbS3T31 BAX12

    Untitled

    Abstract: No abstract text available
    Text: Silicon Switching Diode DO-34 Glass Package 1N4534 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features DO-34 Glass Package • Six sigma quality • Metallurgical^ bonded


    OCR Scan     		PDF 1N4534 DO-34

    diode smd ED 84

    Abstract: DSAIH00025343 SMD 437 diode
    Text: Silicon Switching Diode 1N4153 DO-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features DO-35 Glass Package nominal dimensions Six sigma quality


    OCR Scan     		PDF 1N4153 DO-35 LL-34/35 Mil-S-19500/437 4031-B 1N4153 DO-213AA LL4153) 1N4153UR-1HR, diode smd ED 84 DSAIH00025343 SMD 437 diode

    4066 Handbook

    Abstract: 2N3103 2n3033 2N3091 2N3093 2N3095 2N3097 2N3098 2N3099 2N3101
    Text: K1L-S-19500/280A EC 6 .Tannery 197» SUPERSEDING HTL-S-19500/280(NAVY) 2 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, THYRISTOR (CONTROLLED RECTIFIER). SILICON TYPES 2N3091, 2N3093, 2N3095, 2N3097, 2N3098, 2N3099, 2N3101, 2N3103, 2N3105, AND 2N3106


    OCR Scan     		PDF K1L-S-19500/280A MTL-S-19500/280 2N3091, 2N3093, 2N3095, 2N3097, 2N3098, 2N3099, 2N3101, 2N3103, 4066 Handbook 2N3103 2n3033 2N3091 2N3093 2N3095 2N3097 2N3098 2N3099 2N3101

    smd 2U 75 diode

    Abstract: SMD DIODE 2U smd 2U diode DSAIH0002551
    Text: Silicon Switchina Diode Applications 1N4153, 1N4153-1 k_1I DO-35 Glass Package Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Lead D ia


    OCR Scan     		PDF 1N4153, 1N4153-1 DO-35 LL-34/35 Mil-S-19500/33/ 031-A smd 2U 75 diode SMD DIODE 2U smd 2U diode DSAIH0002551

    Untitled

    Abstract: No abstract text available
    Text: Silicon Switching Diode 1N4150 Applications 1 DO-35 Glass Package Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features • • • DO-35 Glass Package nominal dimensions Six sigma quality


    OCR Scan     		PDF 1N4150 DO-35 LL-34/35 Mil-S-19500/231 1N4150 DO-213AAcomes LL4150) 1N4150UR-1

    C10A series

    Abstract: GFM 15A 2N1777A solid state c10a RECTIFIER
    Text: SCR CIO SERIES 2N1770A-2N1777A CIO Series 2N1770A-2N1777A Silicon Controlled Rectifier is a reverse blocking triode thyristor semiconductor for use in low power switching and phase control applications requiring blocking voltages up to 400 volts, and RMS load


    OCR Scan     		PDF 2N1770A-2N1777A 2N1770A-2N1777A) 2N1770A) C10A series GFM 15A 2N1777A solid state c10a RECTIFIER

    Untitled

    Abstract: No abstract text available
    Text: Silicon Switching Diode 1 DO-35 Glass Package 1N4148 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features • • • • • • DO-35 Glass Package nominal dimensions


    OCR Scan     		PDF DO-35 1N4148 LL-34/35 Mil-S-19500/116 4031-B 1N4150 DO-213AA LL4150) 1N4150UR-1

    SMD 437 diode

    Abstract: BKC Semiconductors DSAIH0002562 0000b32
    Text: MINI-MELF-SMD LL4153 Applications II] Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXJ TXV and S level per


    OCR Scan     		PDF LL4153 MIL-S-19500/437 LL-34/35 DO-35 Mil-S-19500 DO-213AA) 4031-B 1N4153UR-1 DO-213AA SMD 437 diode BKC Semiconductors DSAIH0002562 0000b32

    ITRON DC 205

    Abstract: 448-48
    Text: GENL INSTR/ POUER 3flE D 3ST0137 OOQ4fl4T T • GIC T'23~0S AW02G THRU AW08G MINIATURE GLASS PASSIVATED CONTROLLED AVALANCHE SINGLE - PHASE SILICON BRIDGE RECTIFIER VOLTAGE - 200 to 800 Volts CURRENT - 1 . 5 Amperes FEATURES ♦ Glass passivated chip junctions


    OCR Scan     		PDF 3ST0137 AW02G AW08G 5F4-1-13 ITRON DC 205 448-48