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    SILICON DARLINGTON TRANSISTOR VCEO 1600 Search Results

    SILICON DARLINGTON TRANSISTOR VCEO 1600 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SILICON DARLINGTON TRANSISTOR VCEO 1600 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 ● • * 1.5±0.1 Parameter Symbol Ratings Unit VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current


    Original     		2SD1511 PDF

    2SD1511

    Abstract: No abstract text available
    Text: Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification 4.5±0.1 ● • * 1.5±0.1 Parameter Symbol Ratings Unit VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current


    Original     		2SD1511 2SD1511 PDF

    TIP142TU

    Abstract: TIP141LTU tip140 equivalent
    Text: TIP140/141/142 TIP140/141/142 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145/146/147 TO-3P 1 NPN Epitaxial Silicon Darlington Transistor


    Original     		TIP140/141/142 TIP145/146/147 TIP140 TIP141 TIP142 TIP140 TIP142TU TIP141LTU tip140 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140/141/142 TO-3P 1 PNP Epitaxial Silicon Darlington Transistor


    Original     		TIP145/146/147 TIP140/141/142 TIP145 TIP146 TIP147 TIP145 PDF

    TIP142

    Abstract: equivalent transistor 1970 tip142 equivalent tip141 equivalent TIP141 transistor tip142 TIP141 TRANSISTOR TIP-142 SC-65 TIP140
    Text: TIP140/TIP141/TIP142 NPN Epitaxial Silicon Darlington Transistor • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145/146/147 Equivalent Circuit


    Original     		TIP140/TIP141/TIP142 TIP145/146/147 TIP140 TIP141 TIP142 TIP140/TIP141/TIP142 TIP142 equivalent transistor 1970 tip142 equivalent tip141 equivalent TIP141 transistor tip142 TIP141 TRANSISTOR TIP-142 SC-65 TIP140 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter


    Original     		TIP140T/141T/142T TIP145T/146T/147T O-220 TIP140T TIP141T TIP142T PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • • • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. Industrial Use Complement to TIP140T/141T/142T Equivalent Circuit


    Original     		TIP145T/146T/147T TIP140T/141T/142T O-220 TIP145T TIP146T TIP147T TIP145T/146T/147T PDF

    TIP147

    Abstract: tip147 transistor TIP146 tip146 equivalent tip145 equivalent tip147 fairchild tip147 equivalent equivalent transistor 1970 tip142 equivalent ASME-14
    Text: TIP145/TIP146/TIP147 PNP Epitaxial Silicon Darlington Transistor • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. Industrial Use Complement to TIP140/141/142 Equivalent Circuit


    Original     		TIP145/TIP146/TIP147 TIP140/141/142 TIP145 TIP146 TIP147 TIP145/TIP146/TIP147 TIP147 tip147 transistor TIP146 tip146 equivalent tip145 equivalent tip147 fairchild tip147 equivalent equivalent transistor 1970 tip142 equivalent ASME-14 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter


    Original     		TIP145T/146T/147T TIP140T/141T/142T O-220 TIP145T TIP146T TIP147T PDF

    147T

    Abstract: TIP147T "Darlington Transistor" TIP146T darlington power transistor 10a pnp darlington to-220 10a TIP145T
    Text: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T Equivalent Circuit


    Original     		TIP145T/146T/147T TIP140T/141T/142T O-220 TIP145T TIP146T TIP147T TIP145T/146T/147T 147T TIP147T "Darlington Transistor" TIP146T darlington power transistor 10a pnp darlington to-220 10a TIP145T PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145T/146T/147T


    Original     		TIP140T TIP141T TIP142T TIP145T/146T/147T O-220 TIP140T TIP141T PDF

    TIP147

    Abstract: counterfeit tip146 equivalent tip147 data sheet tip147 fairchild TIP145 TIP146 tip147 equivalent
    Text: TIP145 / TIP146 / TIP147 PNP Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. Industrial Use Complement to TIP140/141/142


    Original     		TIP145 TIP146 TIP147 TIP140/141/142 TIP145 TIP146 TIP147 counterfeit tip146 equivalent tip147 data sheet tip147 fairchild tip147 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A


    Original     		-100mA -10mA Mar-97 PDF

    TIP142T

    Abstract: gto 5A NPN Transistor TO220 VCEO 60V IC 5a TIP140T TIP141T US Global Sat
    Text: TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145T/146T/147T


    Original     		TIP140T TIP141T TIP142T TIP145T/146T/147T O-220 TIP140T TIP141T TIP142T gto 5A NPN Transistor TO220 VCEO 60V IC 5a US Global Sat PDF

    em 234 stepper

    Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
    Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		O01ED0 H1-O01ED0-0106030ND em 234 stepper 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090 PDF

    2SC5586 equivalent

    Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements


    Original     		TM1641S-L TM1661B-L TM1661P-L TM1661S-L TM2541B-L TM2561B-L TM341M-L TM341S-L TM341S-R TM361M-L 2SC5586 equivalent 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent PDF

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


    Original     		MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE PDF

    C3679 equivalent

    Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
    Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.


    Original     		T01EE0 H1-T01EE0-0107020SB C3679 equivalent transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220 PDF

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493 PDF

    2SD2067

    Abstract: No abstract text available
    Text: Transistor 2SD2067 Tentative Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.7 4.0 (1.45) 0.8 • Features ● ● 14.5±0.5 +0.1 0.45–0.05 2.5±0.5 1 2.5±0.5 2 3 2.5±0.1 ● Darlington connection. High foward current transfer ratio hFE.


    Original     		2SD2067 2SD2067 PDF

    2SD2258

    Abstract: No abstract text available
    Text: Transistor 2SD2258 Tentative Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 ● 14.5±0.5 Darlington connection. High foward current transfer ratio hFE. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5±0.5 2.5±0.5 2 3 2.5±0.1


    Original     		2SD2258 2SD2258 PDF

    2SD1198

    Abstract: 2SD1198A 2SD11
    Text: Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification • Features ■ Absolute Maximum Ratings Parameter 2SD1198 base voltage 2SD1198A Collector to 2SD1198 emitter voltage 2SD1198A * Ratings Unit


    Original     		2SD1198, 2SD1198A 2SD1198 2SD1198 2SD1198A 2SD11 PDF

    2SD1511

    Abstract: power darlington npn transistor
    Text: Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification ● 0.5±0.08 1.5±0.1 2.5±0.1 0.4±0.04 3.0±0.15 3 • Absolute Maximum Ratings +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE


    Original     		2SD1511 2SD1511 power darlington npn transistor PDF

    Darlington 30A

    Abstract: No abstract text available
    Text: 6 1 1 5 9 5 0 MI CROSEMI CORP/ POWER Û2E ÖÖ 480 D j_0E DEjbllSTSD □00D4Û0 fl pjQ -|0020 H T EC H N O L O G Y p j c 10021 Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 60 AMPERES 250 VOLTS 0.161 4jg 0.15) (3 84) u w - FEATURES


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