D10S120
Abstract: power diode history
Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 10S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma n age m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW10S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the
|
Original
|
PDF
|
10S120
IDW10S120
IDWxxS120
D10S120
power diode history
|
IDW30S120
Abstract: 30S120 D30S120
Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 30S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW30S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the
|
Original
|
PDF
|
30S120
IDW30S120
IDWxxS120
IDW30S120
30S120
D30S120
|
d15s120
Abstract: 15S120 schottky 400v
Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 15S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW15S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the
|
Original
|
PDF
|
15S120
IDW15S120
IDWxxS120
d15s120
15S120
schottky 400v
|
Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 30S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW30S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the
|
Original
|
PDF
|
30S120
IDW30S120
IDWxxS120
|
Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 15S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW15S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the
|
Original
|
PDF
|
15S120
IDW15S120
IDWxxS120
|
IDW20S120
Abstract: TP200
Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW20S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW20S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the
|
Original
|
PDF
|
IDW20S120
IDWxxS120
IDW20S120
TP200
|
Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW20S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW20S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the
|
Original
|
PDF
|
IDW20S120
IDWxxS120
|
Untitled
Abstract: No abstract text available
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK APT10SC120B 1200V 10A APT10SC120S 1200V 10A 1 2 2 1 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier
|
Original
|
PDF
|
APT10SC120B
APT10SC120S
O-247
|
APT2X10SC120J
Abstract: No abstract text available
Text: 2 3 2 2 3 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2X10SC120J APT2X11SC120J 27 2 T- SO APT2X11SC120J APT2X10SC120J 1200V 1200V 10A 10A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies
|
Original
|
PDF
|
APT2X10SC120J
APT2X11SC120J
APT2X11SC120J
OT-227
APT2X10SC120J
|
Untitled
Abstract: No abstract text available
Text: APT30SCD120B APT30SCD120S 1200V 30A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems
|
Original
|
PDF
|
APT30SCD120B
APT30SCD120S
O-247
|
APT20S
Abstract: 200v 100A schottky APT20SCD120B
Text: APT20SCD120B APT20SCD120S 1200V 20A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems
|
Original
|
PDF
|
APT20SCD120B
APT20SCD120S
O-247
APT20S
200v 100A schottky
|
Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 10S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma n age m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW10S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the
|
Original
|
PDF
|
10S120
IDW10S120
IDWxxS120
|
Untitled
Abstract: No abstract text available
Text: APT10SCD120BCT 1200V 10A Zero Recovery Silicon Carbide Schottky Diode BCT T O PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times (trr) • Higher Reliability Systems
|
Original
|
PDF
|
APT10SCD120BCT
O-247
|
Untitled
Abstract: No abstract text available
Text: APT10SCE120B 1200V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package
|
Original
|
PDF
|
APT10SCE120B
O-247
|
|
|
APT10SCD120B
Abstract: No abstract text available
Text: APT10SCD120B 1200V 10A Zero Recovery Silicon Carbide Schottky Diode TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package
|
Original
|
PDF
|
APT10SCD120B
O-247
|
Untitled
Abstract: No abstract text available
Text: APT20SCD120BHB 1200V 20A Zero Recovery Silicon Carbide Schottky Diode TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Time trr • Higher Reliability Systems • Popular TO-247 Package
|
Original
|
PDF
|
APT20SCD120BHB
O-247
|
RURG15120CC
Abstract: URG15120C
Text: RURG15120CC Data Sheet January 2000 File Number 3695.2 15A, 1200V Ultrafast Dual Diode Features The RURG15120CC is an ultrafast dual diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated
|
Original
|
PDF
|
RURG15120CC
RURG15120CC
100ns)
100ns
URG15120C
|
RURU50120
Abstract: TA49099
Text: RURU50120 Data Sheet January 2002 50A, 1200V Ultrafast Diode Features The RURU50120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RURU50120
RURU50120
125ns)
125ns
175oC
TA49099
|
RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RURU150120
RURU150120
200ns)
200ns
175oC
|
RURP8120
Abstract: No abstract text available
Text: RURP8120 Data Sheet January 2002 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RURP8120
RURP8120
100ns)
100ns
175oC
|
RUR15120
Abstract: RURP15120
Text: RURP15120 Data Sheet January 2002 15A, 1200V Ultrafast Diode Features The RURP15120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RURP15120
RURP15120
100ns)
100ns
175oC
RUR15120
|
RURG50120
Abstract: TA49099
Text: RURG50120 Data Sheet January 2002 50A, 1200V Ultrafast Diode Features The RURG50120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RURG50120
RURG50120
125ns)
125ns
175oC
TA49099
|
RHR6120C
Abstract: RHRP6120CC TA49058
Text: RHRP6120CC January 2002 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RHRP6120CC
RHRP6120CC
175oC
RHR6120C
TA49058
|
TA49036
Abstract: RURP4120CC
Text: RURP4120CC Data Sheet January 2000 File Number 4050.1 4A, 1200V Ultrafast Dual Diode Features The RURP4120CC is an ultrafast dual diode with soft recovery characteristics trr < 70ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted
|
Original
|
PDF
|
RURP4120CC
RURP4120CC
TA49036
|
