schottky diode
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0060A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0060A Type：SB340 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0060A
TypeSB340
size60mils
60mils1
thickness12
038mm
area48mils
48mils1
padAnode54
schottky diode
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"Schottky Diode"
Abstract: 1N5822 data sheet
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0055A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0055A Type：1N5822 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0055A
Type1N5822
size55mils
55mils1
thickness12
038mm
area44
padAnode48
characteristicsTa25
"Schottky Diode"
1N5822 data sheet
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a2165
Abstract: No abstract text available
Text: MCH5839 Ordering number : ENA2165 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5839 General-Purpose Switching Device Applications Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode
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ENA2165
MCH5839
A2165-7/7
a2165
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Untitled
Abstract: No abstract text available
Text: MCH5839 Ordering number : ENA2165 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5839 General-Purpose Switching Device Applications Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode
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MCH5839
ENA2165
A2165-7/7
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MCH3406
Abstract: SBS010M CPH5831
Text: CPH5831 Ordering number : ENN8220 CPH5831 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converters. Composite type with a N-Channel Silicon MOSFET MCH3406 and a Schottky Barrier Diode (SBS010M) contained
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CPH5831
ENN8220
MCH3406)
SBS010M)
MCH3406
SBS010M
CPH5831
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Untitled
Abstract: No abstract text available
Text: 拡散型シリコンダイオード 3A 200V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 30PDA20 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用
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Tjw150
30PDA20
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30PDA2
Abstract: No abstract text available
Text: 拡散型シリコンダイオード 3A 200V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 30PDA20 形 図 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用
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Tjw150
30PDA20
30PDA2
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Untitled
Abstract: No abstract text available
Text: US 3A . US 3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Ultrafast silicon rectifier diodes US 3A.US 3M
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SCH2830
Abstract: No abstract text available
Text: SCH2830 Ordering number : ENA0861 SANYO Semiconductors DATA SHEET SCH2830 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package
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SCH2830
ENA0861
A0861-6/6
SCH2830
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BULD125KC
Abstract: electronic ballast with npn transistor
Text: BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability ● Diode trr Typically 1 µs
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BULD125KC
O-220
BULD125KC
electronic ballast with npn transistor
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Untitled
Abstract: No abstract text available
Text: 拡散型シリコンダイオード 3A 100V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 形 図 30PDA10 拡散型シリコンダイオード,リード線型 構造 Construction Application • 最大定格 Diffusion-type Silicon Rectifier Diode
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Tjw150â
30PDA10
30PDA20
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10 DC-4 diode
Abstract: No abstract text available
Text: 拡散型シリコンダイオード 3A 100V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 形 図 30PDA10 拡散型シリコンダイオード,リード線型 構造 Construction Application • 最大定格 Diffusion-type Silicon Rectifier Diode
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Tjw150
30PDA10
10 DC-4 diode
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melf diode color
Abstract: glass mini melf diode MELF DIODE color bands LL4148 r20V LL4148 diode galaxy electrical
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Mini - MELF Silicon epitaxial diode High speed switching diode 500mW power dissipation MECHANICAL DATA Case:Mini-MELF glass case Polarity:Color band denotes cathode
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LL4148
1111REVERSE
500mW
melf diode color
glass mini melf diode
MELF DIODE color bands
LL4148
r20V
LL4148 diode galaxy electrical
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1N4448
Abstract: LL4448
Text: CE LL4448 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES Mini-MELF . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the DO-35 case with the type designation 1N4448 MECHANICAL DATA
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LL4448
500mW
DO-35
1N4448
05gram
1N4448
LL4448
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LL4148
Abstract: DIODE LL4148
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case
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LL4148
1111REVERSE
500mW
LL4148
DIODE LL4148
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LL4448
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4448 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case
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LL4448
1111REVERSE
500mW
LL4448
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4448 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case
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LL4448
1111REVERSE
500mW
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A MINI-MELF Silicon epitaxial diode High speed switching diode Cathode indification φ1 .5±0.1 500mW power dissipation MECHANICAL DATA Case:MINI-MELF glass case
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LL4148
1111REVERSE
500mW
Ave268010
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4420 Transistor
Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
transistor b 622
pnp transistor d 640
Schottky Diode 40V 5A
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
0118 transistor
High voltage fast switching power transistor pnp
DSA003748
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LL4148
Abstract: CHENYI ELECTRONICS 1N4148 1N4148
Text: CE LL4148 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the DO-35 case with the type designation 1N4148 MECHANICAL DATA Dimensions in inches and millimeters
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LL4148
500mW
DO-35
1N4148
05gram
LL4148
CHENYI ELECTRONICS 1N4148
1N4148
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1N4148 DO-34
Abstract: 100HZ 100MHZ 1N4148
Text: 1N4148 Voltage Range -75 Volts Current -0.15 Ampere SMALL SIGNAL SWITCHING DIODE Features Silicon epitaxial planar diode High speed switching diode 500mW power dissipation These diodes are also available in glass case DO-34,Mini-MELF DO-34 GLASS 1.143 (29.03)
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1N4148
500mW
DO-34
DO-35
1N4148 DO-34
100HZ
100MHZ
1N4148
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diode led ir
Abstract: small signal diodes case ja 1N4151 LL4151 electronics symbols
Text: CE 1N4151 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the Mini-MELF case with the type designation LL4151 MECHANICAL DATA . Case: DO-35 glass case
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1N4151
500mW
LL4151
DO-35
13gram
diode led ir
small signal diodes case ja
1N4151
LL4151
electronics symbols
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Untitled
Abstract: No abstract text available
Text: LL4148 SMALL SIGNAL REVERSE VOLTAGE - 75 Volts FORWARD CURRENT - 0.15Amperes SWITCHING DIODE DL - 35 FEATURES ● Silicon epitaxial planar diode ● High speed switching diode ● 500mW power dissipation .063 1.6 .055(1.4) .020(0.5) .012(0.3) .146(3.7) .130(3.3)
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LL4148
15Amperes
500mW
Av100
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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OCR Scan
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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