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    SILICON DIODE AND GERMANIUM Search Results

    SILICON DIODE AND GERMANIUM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SILICON DIODE AND GERMANIUM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EF22

    Abstract: EF12 FOA21002A FOA21002A1 FOA21002A2 FOA41001B1 EAM laser Germanium PIN laser diode laser diode bare chip
    Text: P R O D U C T B R I E F Semiconductor Solutions for High Speed Communication and Fiber Optic Applications The FOA21002A2 is the industry's first STM64/OC-192 Laser Diode Driver for SDH/SONET systems in Silicon Germanium technology. This new device is a key component


    Original     		FOA21002A2 STM64/OC-192 FOA21002A2 B168-H7713-G1-X-7600 EF22 EF12 FOA21002A FOA21002A1 FOA41001B1 EAM laser Germanium PIN laser diode laser diode bare chip PDF

    ef12

    Abstract: EF22 FOA21002A1 FOA31002B1 FOA41001B1 FOA51001B1 B168-H7713-X-X-7600 EAM laser
    Text: P R O D U C T B R I E F Semiconductor Solutions for High Speed Communication and Fiber Optic Applications The FOA21002A1 is the industry's first STM64/OC-192 Laser Diode Driver for SDH/SONET systems in Silicon Germanium technology. This new device is a key component


    Original     		FOA21002A1 STM64/OC-192 FOA21002A1 B168-H7713-X-X-7600 ef12 EF22 FOA31002B1 FOA41001B1 FOA51001B1 B168-H7713-X-X-7600 EAM laser PDF

    CQY78

    Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
    Text: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge


    Original     		BPW33) CQY78 CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium PDF

    Germanium DO-35 DIODE

    Abstract: Germanium Schottky diode 1N270 CDSH270 diode germanium 1n270 DIODE marking 16 schottky diode 1N270 germanium
    Text: CDSH270 SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDSH270 silicon Schottky diode is designed to replace the 1N270 Germanium diode. Some advantages over the 1N270 are lower forward voltage, lower leakage current, faster


    Original     		CDSH270 1N270 DO-35 100mA 200mA 16-August Germanium DO-35 DIODE Germanium Schottky diode diode germanium 1n270 DIODE marking 16 schottky diode 1N270 germanium PDF

    Q265

    Abstract: diode germanium 1n270 1N695 transitron matched diodes Q252 1N270 1N3066 transitron 1n648 S555G silicon diode and germanium
    Text: MATCHED DIODE QUADS Transitron's efficiency E R - 4 case epoxy encapsulated diode quads feature high silicon or germanium diodes with matched forward charac- teristics. Individual diodes allow the user maximum circuit configurations versatility. TABLE I SILICON DIODE TYPES


    Original     		1N485B 1N648 1N914B 1N3066 1N3066 1N270 Q265 diode germanium 1n270 1N695 transitron matched diodes Q252 transitron 1n648 S555G silicon diode and germanium PDF

    germanium photodiode PIN

    Abstract: FOA41001B1 photodiode germanium FOA11002A FOA11002A1 FOA21002A1 FOA31002B1 FOA51001B1 laser diode bare chip foa3100
    Text: P R O D U C T B R I E F Semiconductor Solutions for High Speed Communication and Fiber Optic Applications The FOA11002A1 is the industry's lowest power consuming STM64/OC-192 Transimpedance Amplifier for SDH/SONET systems in Silicon Germanium technology. This new device is a key component for future high


    Original     		FOA11002A1 STM64/OC-192 FOA11002A1 B168-H7712-G1-X-7600 germanium photodiode PIN FOA41001B1 photodiode germanium FOA11002A FOA21002A1 FOA31002B1 FOA51001B1 laser diode bare chip foa3100 PDF

    germanium photodiode PIN

    Abstract: FOA11002A1 FOA21002A1 FOA31002B1 FOA41001B1 FOA51001B1 photodiode ber 10-9 Germanium PIN laser diode 002A1
    Text: P R O D U C T B R I E F Semiconductor Solutions for High Speed Communication and Fiber Optic Applications The FOA11002A1 is the industry's lowest power consuming STM64/OC-192 Transimpedance Amplifier for SDH/SONET systems in Silicon Germanium technology. This new device is a key component for future high


    Original     		FOA11002A1 STM64/OC-192 FOA11002A1 B168-H7712-X-X-7600 germanium photodiode PIN FOA21002A1 FOA31002B1 FOA41001B1 FOA51001B1 photodiode ber 10-9 Germanium PIN laser diode 002A1 PDF

    Germanium PIN laser diode

    Abstract: receiver pin diode for 10Gbps silicon diode and germanium tunable lasers diode applications 3.3v laser diode stm 64 APD 10gbps Germanium Power Diodes laser driver, STM-64 bare die FOA3251B1
    Text: High Speed Communication ICs Product Overview Function Transceiver Functions: Part Number Clock and Data Recovery FOA3251B1 Clock and Data Recovery FOA3100xB1 MUX/CMU FOA4100xB1 MUX/CMU FOA4400xA DEMUX/CDR FOA5100xB1 DEMUX/CDR FOA5400xA Ø MUX/CMU Ø DEMUX/CDR


    Original     		FOA3251B1 FOA3100xB1 FOA4100xB1 FOA4400xA FOA5100xB1 FOA5400xA 10Gbps OC-192/ STM-64 10Gbps Germanium PIN laser diode receiver pin diode for 10Gbps silicon diode and germanium tunable lasers diode applications 3.3v laser diode stm 64 APD 10gbps Germanium Power Diodes laser driver, STM-64 bare die FOA3251B1 PDF

    smd-transistor DATA BOOK

    Abstract: rele smd sod-80 SMD TBA 860 TO50 package carbon and its compounds DO220 smd-transistor TRANSISTOR SMD catalog TBA 611
    Text: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future


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    Diode DH 582

    Abstract: DO214AC DO35 DO41 germanium diode smd
    Text: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future


    Original     		PDF

    material declaration vishay

    Abstract: asbestos safety TbA 8220 m CAS No. 28064-14-4 DO-214 diode 84084 material declaration semiconductor package sot-363 Package material 28064-14-4 40039
    Text: VISHAY Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their


    Original     		LLP-75 29-Apr-04 material declaration vishay asbestos safety TbA 8220 m CAS No. 28064-14-4 DO-214 diode 84084 material declaration semiconductor package sot-363 Package material 28064-14-4 40039 PDF

    silver epoxy

    Abstract: silver ag wire Bond telefunken germanium class H epoxy resin
    Text: Vishay Telefunken The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future


    Original     		PDF

    lidar apd model

    Abstract: APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode
    Text: !"#$%& Avalanche Photodiodes: A User's Guide Abstract Avalanche photodiode detectors have and will continue to be used in many diverse applications such as laser range finders and photon correlation studies. This paper discusses APD structures, critical performance parameters and the excess noise factor.


    Original     		ED-13, ED-0017/03/8, C30902E/S, C30921 lidar apd model APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode PDF

    al688

    Abstract: No abstract text available
    Text: VISHAY Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their


    Original     		ans627 07-Jan-03 al688 PDF

    material declaration semiconductor package

    Abstract: asbestos safety material declaration vishay 89901 DO-219AB 58018
    Text: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their


    Original     		LLP-75 06-May-04 material declaration semiconductor package asbestos safety material declaration vishay 89901 DO-219AB 58018 PDF

    ZPD 5.1 ITT

    Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
    Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers


    OCR Scan     		F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode PDF

    BA163

    Abstract: dk qs BA 30 C Diode BA 163 BA244 QS700
    Text: Silicon Capacitance Diodes Germanium Diodes Silicon Epitaxial Planar C apacitance Diode in DO-7 glass package w itn w ide e ffective capacitance variation fo r tun ing over the total fre­ quency range in short-wave, medium-wave, and long-w ave circu its Type


    OCR Scan     		PDF

    back Tunnel diode

    Abstract: metal detectors circuit "back diode" point contact diode tunnel diode application
    Text: D fU M iu 'H C General Infotmation RF detection is achieved through utilization of the nonlinear, current-voltage characteristics of a semiconducting junction. Two fundamental detector diode types are used; silicon-based, Schottky barrier and germanium-based, tunnel or back diodes.


    OCR Scan     		PDF

    back Tunnel diode

    Abstract: Tunnel Diode tunnel diode application
    Text: Detector Overview General Inform ation RF detection is achieved through utilization o f th e nonlinear, current-voltage characteristics o f a semiconducting junction. Two fundamental d ete cto r diode types are used; silicon-based, Schottky barrie r and germanium-based, tunnel o r back diodes.


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    varicap diode bb122

    Abstract: BB122 Varicap bb122 DIODE AA143 germanium diode itt BB121 AA143 BB121B varicap diode tv tuner AA143 ITT
    Text: ITT Semiconductors Diodes Germanium Gold Bonded Diodes— Type DK For fast sw itching applications REFEREN CE T A B L E VRM If Code V mean DK13 DK14 DK15 DK19 DK20 DK21 50 80 100 25 70 8.0 120 120 120 — 80 — mA pk 250 250 250 110 100 30 surge 500 500 500


    OCR Scan     		100mA 1380E 1379B 1381C 160at60Â 1383X 1386D AA143 14E08E AA144 varicap diode bb122 BB122 Varicap bb122 DIODE AA143 germanium diode itt BB121 BB121B varicap diode tv tuner AA143 ITT PDF

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071 PDF

    Silicon Point Contact Diode

    Abstract: No abstract text available
    Text: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard


    OCR Scan     		375GHz DC1596) OC1301) -10dB -20dB 35GHz 150pA. Silicon Point Contact Diode PDF

    sx3704

    Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
    Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are


    OCR Scan     		ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram PDF

    BYX38-600

    Abstract: germanium rectifier diode byx38 diode germanium varactor diode BYX38
    Text: TYPE DESIGNATION J^ PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits — , multiples of such devices and semiconductor chips. "Although not all type numbers accord with the Pro Electron system, the following explanation is given


    OCR Scan     		BYX38-600 BZY93-C7V5 BYX38 BZY93 germanium rectifier diode byx38 diode germanium varactor diode PDF