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    SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Search Results

    SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    WBFBP-02C

    Abstract: transistor marking code 325 Schottky schottky barrier rectifiers
    Text: SCS521DS 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION ● Silicon epitaxial planar Schottky barrier Diodes ● Small surface mounting type


    Original     		SCS521DS WBFBP02C 01-June-2008 WBFBP-02C transistor marking code 325 Schottky schottky barrier rectifiers PDF

    SCS520

    Abstract: Schottky Barrier Rectifiers low current SCHOTTKY BARRIER RECTIFIERS
    Text: SCS520DS 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION ● Silicon epitaxial planar Schottky barrier Diodes ● Small surface mounting type


    Original     		SCS520DS 11-Nov-2009 SCS520 Schottky Barrier Rectifiers low current SCHOTTKY BARRIER RECTIFIERS PDF

    Untitled

    Abstract: No abstract text available
    Text: SCS521DS 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION ● Silicon epitaxial planar Schottky barrier Diodes ● Small surface mounting type


    Original     		SCS521DS 05REF 11-Nov-2009 PDF

    SCS70DSTN

    Abstract: No abstract text available
    Text: SCS70DSTN 0.07 A, 70 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION WBFBP-02C Planar Schottky barrier diode with an integrated guard ring


    Original     		SCS70DSTN WBFBP-02C 22-Nov-2013 SCS70DSTN PDF

    SCS40STN

    Abstract: No abstract text available
    Text: SCS40STN 0.12 A, 40 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION WBFBP-02C Planar Schottky barrier diode with an integrated guard ring


    Original     		SCS40STN WBFBP-02C 13-Dec-2013 SCS40STN PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB108100MA 2SB108100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB108100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical


    Original     		2SB108100MA 2SB108100MA 002mA@ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB229100MA 2SB229100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB229100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical


    Original     		2SB229100MA 2SB229100MA 002mA@ 2290mm; 2195mm; PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB139100MA 2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB139100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical


    Original     		2SB139100MA 2SB139100MA 002mA@ 390mm; 295mm; PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB267100MA 2SB267100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB267100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical


    Original     		2SB267100MA 2SB267100MA 002mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB183060MA 2SB183060MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB183060MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical


    Original     		2SB183060MA 2SB183060MA 002mA@ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB166100MA 2SB166100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB166100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical


    Original     		2SB166100MA 2SB166100MA 002mA@ 1660mm; 1565mm; PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB154100MA 2SB154100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB154100MA is a schottky barrier diode chips Ø Lb fabricated in silicon epitaxial planar technology; La Ø Due to special schottky barrier structure, the chips have very low reverse leakage current typical


    Original     		2SB154100MA 2SB154100MA 002mA@ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB183100MA 2SB183100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB183100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical


    Original     		2SB183100MA 2SB183100MA 002mA@ PDF

    top metal

    Abstract: silan
    Text: 2SB035040AML 2SB035040AML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040AML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.


    Original     		2SB035040AML 2SB035040AML 2SB035040AMLJY-155 2SB035040AMLJL-155 500dice/wafer top metal silan PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB075060ML 2SB075060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB075060ML is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;


    Original     		2SB075060ML 2SB075060ML 2SB075060MLYY PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB035100ML 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB035100ML is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;


    Original     		2SB035100ML 2SB035100ML 2SB035100MLJY 250mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB075030MLJL 2SB075030MLJL SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ¾ 2SB075030MLJL is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ¾ Low power losses, high efficiency; ¾ Guard ring construction for transient protection;


    Original     		2SB075030MLJL 2SB075030MLJL PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;


    Original     		2SB030070MLJY 2SB030070MLJY PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB083040ML 2SB083040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB083040ML is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;


    Original     		2SB083040ML 2SB083040ML 2SB083040MLYY PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB035040ML 2SB035040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.


    Original     		2SB035040ML 2SB035040ML 2SB035040MLJY 2SB035040MLJY-155 2SB035040MLJL 2SB035040MLJL-155 500dice/wafer PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB065030ML 2SB065030ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB065030ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.


    Original     		2SB065030ML 2SB065030ML 2SB065030MLYY-210 2SB065030MLJY-180 2SB065030MLJY-155 2SB065030MLJL-180 2SB065030MLJL-155 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB053020MTJY 2SB053020MTJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB053020MTJY is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;


    Original     		2SB053020MTJY 2SB053020MTJY 150uA 100mA 500mA PDF

    ZC2800

    Abstract: E7* sot-23 MARKING 7A sot-23 ZC2800E ZC2810 ZC2810E ZC2811 ZC2811E ZC5800 ZC5800E
    Text: SCH OTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCHOTTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.


    OCR Scan     		OT-23 ZC2800 ZC2810 10fiA ZC2811 ZC5800 E7* sot-23 MARKING 7A sot-23 ZC2800E ZC2810 ZC2810E ZC2811 ZC2811E ZC5800 ZC5800E PDF

    Diode Marking z3 SOT-23

    Abstract: schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 sot marking code w7 Z4 SOT23
    Text: SCHOTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCH O TTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.


    OCR Scan     		OT-23 to-92 sot-23 BZX84 FMMD3102 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 ZC830 Diode Marking z3 SOT-23 schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 sot marking code w7 Z4 SOT23 PDF