SILICON EPITAXIAL PLANAR TRANSISTOR PHILIPS Search Results

SILICON EPITAXIAL PLANAR TRANSISTOR PHILIPS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

SILICON EPITAXIAL PLANAR TRANSISTOR PHILIPS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
LLE18100X Abstract: MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES	Original	PDF	LLE18100X OT437A LLE18100X MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431
epsilam 10 Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16 Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial	Original	PDF	LFE18500X epsilam 10 BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16
epsilam 10 Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial	Original	PDF	LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
2N3553 Abstract: TRANSISTOR 2n3553 inductor 4312 020 36640 MGC929 2N3553 equivalent 2N3553 NPN Planar choke Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor Product specification Supersedes data of October 1981 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial	Original	PDF	2N3553 SC08a 2N3553 O-39/3 MBB199 TRANSISTOR 2n3553 inductor 4312 020 36640 MGC929 2N3553 equivalent 2N3553 NPN Planar choke
BLV91 Abstract: ferroxcube 1988 mda406 MDA401 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in	Original	PDF	BLV91/SL OT-172D) BLV91 ferroxcube 1988 mda406 MDA401
capacitor 2200 uF Abstract: philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor Product specification 1996 Feb 05 Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a	Original	PDF	BLT82 OT96-1 MAM227 capacitor 2200 uF philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6
BY206 Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	PDF	BLW32 BY206 BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
transistor rf m 1104 Abstract: UHF TRANSISTOR TRIMMER capacitor 5-60 pF BLU97 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU97 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU97 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor designed for use in mobile	Original	PDF	BLU97 OT122A) transistor rf m 1104 UHF TRANSISTOR TRIMMER capacitor 5-60 pF BLU97
BLW33 Abstract: BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW33 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	PDF	BLW33 BLW33 BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558
BY206 Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	PDF	BLW34 BY206 C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
transistor D 2578 Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting	Original	PDF	BLW90 SC08a transistor D 2578 BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook
BLX94C Abstract: MBH100 BLX94 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended	Original	PDF	BLX94C OT122A OT122A BLX94C MBH100 BLX94
transistor 835 Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649 Text: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558	OCR Scan	PDF	BC327; BC327A; BC328 BC337; BC337A; BC338 BC546; BC547; BC548 BC556; transistor 835 Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
Untitled Abstract: No abstract text available Text: • 0025^82 741 ■ APX N AMER PHILIPS/DISCRETE PXT4403 L7E » yv SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for linear switching applications. The complementary type is PXT4401.	OCR Scan	PDF	PXT4403 PXT4401.

PMBT4401 Abstract: No abstract text available Text: • bbS3T31 OOaSAbT 327 H A P X N AMER PHILIPS/DISCRETE PMBT4401 b7E ]> SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT-23 envelope. It is intended for use in linear, switching, and general purpose applications.	OCR Scan	PDF	bbS3T31 PMBT4401 OT-23 PMBT4403. OT-23 PMBT4401
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bTE D bb53T31 DQE7T15 Til APX BSX32 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor in a TO-39 encapsulation. The BSX32 is designed fo r use in high current switching applications. QUICK REFERENCE DATA	OCR Scan	PDF	bb53T31 DQE7T15 BSX32 BSX32
PMBT4401 Abstract: D025 PMBT4403 Text: •I bfc.SB'ÌBl GÜESB75 ill ■ APX N AMER PHILIPS/DISCRETE PMBT4403 b7E » _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT-23 envelope. It is intended fo r use in linear, switching and general purpose applications.	OCR Scan	PDF	PMBT4403 OT-23 PMBT4401. OT-23 PMBT4401 D025 PMBT4403
Untitled Abstract: No abstract text available Text: bbS3T31 QQE5T70 TET H A P X N AMER PHILIPS/DISCRETE PXT2907/A b?E D SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A.	OCR Scan	PDF	bbS3T31 QQE5T70 PXT2907/A PXT2222/A. PXT2907 PXT2907A
PMBT4401 Abstract: No abstract text available Text: • t.fc.S3T31 QQ25fl72 ^11 « A P X N AUER PHILIPS/DISCRETE b7E » PMBT4403 J V SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT-23 envelope. It is intended for use in linear, switching and general purpose applications.	OCR Scan	PDF	S3T31 QQ25fl72 PMBT4403 OT-23 PMBT4401. OT-23 PMBT4401
Untitled Abstract: No abstract text available Text: • bbSB'iai DDESTb? 435 » A P X N AMER PHILIPS/DISCRETE P XT2222/A b?E D ;v SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for switching and linear applications. The complementary type is PXT2907/A.	OCR Scan	PDF	XT2222/A PXT2907/A. PXT2222 PXT2222A x10-4
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE » bb53^31 0D26D50 775 • APX PN2369 PN2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor in plastic TO-92 envelope intended fo r switching applications. Q UICK REFERENCE D A T A Collector-em itter voltage	OCR Scan	PDF	0D26D50 PN2369 PN2369A bbS3T31
PN2369A Abstract: PN2369 BB313 Text: b'îE T> N AMER PHILIPS/DISCRETE • ^ 5 3 ^ 3 1 GDEflGSQ 77S « A P X PN2369 PN2369A L SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor in plastic TO-92 envelope intended fo r switching applications. Q UICK REFERENCE D A T A Collector-em itter voltage	OCR Scan	PDF	PN2369 PN2369A PN2369A BB313
transistor tic 106 Abstract: Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor Text: Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has	OCR Scan	PDF	BLV935 OT273 OT273 OT273. 110fl2ti transistor tic 106 Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor
p2x transistor Abstract: PMBT4401 sot-23 marking 7z sot-23 Marking LG PMBT4403 pmbt4401 p2x transistor marking code p2x Text: • □oasab's 32? h a p x N AMER PHILIPS/DISCRETE PMBT4401 b7E i> SILICON PLANAR EPITAXIAL TRANSISTOR N P N silicon planar ep itax ial transistor, housed in a S O T -2 3 envelope. I t is intended fo r use in linear, switching, and general purpose applications.	OCR Scan	PDF	PMBT4401 OT-23 PMBT4403. OT-23 p2x transistor PMBT4401 sot-23 marking 7z sot-23 Marking LG PMBT4403 pmbt4401 p2x transistor marking code p2x

SILICON EPITAXIAL PLANAR TRANSISTOR PHILIPS Search Results

SILICON EPITAXIAL PLANAR TRANSISTOR PHILIPS Result Highlights (5)

SILICON EPITAXIAL PLANAR TRANSISTOR PHILIPS Datasheets Context Search

LLE18100X

epsilam 10

epsilam 10

2N3553

BLV91

capacitor 2200 uF

BY206

transistor rf m 1104

BLW33

BY206

transistor D 2578

BLX94C

transistor 835

Untitled

PMBT4401

Untitled

PMBT4401

Untitled

PMBT4401

Untitled

Untitled

PN2369A

transistor tic 106

p2x transistor