SILICON N CHANNEL Search Results

SILICON N CHANNEL Result Highlights (5)

Part	Manufacturer	Description
TLP294-4	Toshiba Electronic Devices & Storage Corporation	Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16
TLP295-4	Toshiba Electronic Devices & Storage Corporation	Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

SILICON N CHANNEL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Bft46 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic	Original	BFT46 MAM385 R77/02/pp11 Bft46	PDF
CRS15 Abstract: BFT46 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic	Original	BFT46 MAM385 R77/02/pp11 CRS15 BFT46	PDF
CRS15 Abstract: BFT46 fet junction n-channel transistor FET MARKING CODE MARKING CODE FET MDA267 Silicon N-Channel Junction FET sot23 Philips fet SOT23 code marking MDA274 MARKING m3p Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect	Original	BFT46 MAM385 CRS15 BFT46 fet junction n-channel transistor FET MARKING CODE MARKING CODE FET MDA267 Silicon N-Channel Junction FET sot23 Philips fet SOT23 code marking MDA274 MARKING m3p	PDF
BF511 Abstract: Bf513 Text: DISCRETE SEMICONDUCTORS DAT BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect	Original	BF510 BF510) BF511) BF512) BF513) BF510 R77/02/pp9 BF511 Bf513	PDF
BF510 Abstract: BF511 BF512 BF513 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect	Original	BF510 BF510) BF511) BF512) BF513) R77/02/pp9 BF511 BF512 BF513	PDF
Untitled Abstract: No abstract text available Text: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low	Original	EN5387 FX901 FX901]	PDF
EN5387 Abstract: FX901 PNP Transistor MOSFET Text: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low	Original	EN5387 FX901 FX901] EN5387 FX901 PNP Transistor MOSFET	PDF
BF512 Abstract: Transistors specification with hybrid marking code 513 BF510 BF511 BF513 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon field-effect transistors	Original	BF510 BF510) BF511) BF512) BF512 Transistors specification with hybrid marking code 513 BF511 BF513	PDF
J113 equivalent Abstract: J112 J111 J113 "Field-Effect Transistors" J112 equivalent Field-Effect Transistors J-112 Text: DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors	Original	MAM042 J113 equivalent J112 J111 J113 "Field-Effect Transistors" J112 equivalent Field-Effect Transistors J-112	PDF
bf410 Abstract: BF410C BF410A BF410B BF410D Text: DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1990 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION	Original	BF410A BF410 BF410C BF410B BF410D	PDF
BD264 Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400 Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C	OCR Scan		PDF
TRANSISTOR C 5387 Abstract: C 5387 Text: Ordering num ber:E N 5387 _ FX901 N o.5387 P N P Ep itaxial Plan ar Silicon Transistor N-Channel M O S Silicon F E T Silicon Schottky B a rrie r Diode DC/DC C onverter A pplications F e a tu re s •Composite type w ith a P N P transistor and a 2.5V drive N-channel M O SFE T w ith a built-in low	OCR Scan	FX901 TRANSISTOR C 5387 C 5387	PDF
yn 1018 Abstract: MPF820 RS-50S Scans-00100834 Text: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.	OCR Scan	MPF820 RS-50S! 330pF yn 1018 MPF820 RS-50S Scans-00100834	PDF
2N725 Abstract: L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803 Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 110. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. B170024 4000n 2N725 L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803	PDF

BFS67 Abstract: 310M ft06 HSC5458 200S A190 A192 A193 A390 T072 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 1 10. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE M A X . RATIINGS Ä 2 5 C II MIN. M A X Pc T 6 T T IDERATE FREE I'A E I Ic	OCR Scan	NPN110. NPC214N NPC215N NPC216N SI212N BFS67 310M ft06 HSC5458 200S A190 A192 A193 A390 T072	PDF
2SC736 Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C	OCR Scan	NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2SC736 BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726	PDF
U22 2.5A 250V Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644 Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C	OCR Scan	NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 U22 2.5A 250V P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644	PDF
2N4241 Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C	OCR Scan	NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N4241 OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S	PDF
AD166 Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT	OCR Scan		PDF
BSX86 Abstract: 2SJ13 T072 UC804 310M OM02 uc450 UC340 UC801 UC803 Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 1 10. SILICON PNP 11. SILICON NPN k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T IDERATE FREE I'A E I	OCR Scan	NPN110. MEM402Ã V11023 BSX86 2SJ13 T072 UC804 310M OM02 uc450 UC340 UC801 UC803	PDF
Untitled Abstract: No abstract text available Text: Ordering number : ENN6962 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5902 ISMlYOi High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features Package Dimensions • Composite type with J- F E T and N P N transistors	OCR Scan	ENN6962 CPH5902 CPH5902] CPH5902 2SK2394-equivalent 2SC4639-equivalent	PDF
B170007 Abstract: B170008 sk 110 19 20n B170002 b176 SDT8111 B170003 B170004 B170005 B170006 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. B170024 4000n B170007 B170008 sk 110 19 20n B170002 b176 SDT8111 B170003 B170004 B170005 B170006	PDF
MMT3823 Abstract: micro-T Package Text: MMT3823 silicon MICRO-MINIATURE JUNCTION FIELD-EFFECT TRANSISTOR MICRO-T SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR SYM M E TR IC A L SILICON N-CHANNEL Depletion Mode (Type A ) Fieid-Effect Transistor designed for RF amplifier and mixer applications where high density packaging is	OCR Scan	MMT3823 100-MHz MMT3823 micro-T Package	PDF
transistor 2SC114 Abstract: transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t * - k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C	OCR Scan	NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 transistor 2SC114 transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m	PDF

Privacy Settings

SILICON N CHANNEL Search Results

SILICON N CHANNEL Result Highlights (5)

SILICON N CHANNEL Datasheets Context Search

Bft46

CRS15

CRS15

BF511

BF510

Untitled

EN5387

BF512

J113 equivalent

bf410

BD264

TRANSISTOR C 5387

yn 1018

2N725

BFS67

2SC736

U22 2.5A 250V

2N4241

AD166

BSX86

Untitled

B170007

MMT3823

transistor 2SC114