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    SILICON NPN HIGH VOLTAGE TRANSISTOR Search Results

    SILICON NPN HIGH VOLTAGE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    SILICON NPN HIGH VOLTAGE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BU108

    Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —


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    MJE2361T MJE2360T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 TIP105 Darlington transistor BDX54 BU326 BU100 PDF

    TIP36

    Abstract: BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage —


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    MJ410 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TIP36 BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364 PDF

    PZTA42T1

    Abstract: SMD310 P1D transistor
    Text: ON Semiconductort PZTA42T1 High Voltage Transistor Surface Mount ON Semiconductor Preferred Device NPN Silicon SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Open Base


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    PZTA42T1 318E-04, O-261AA r14525 PZTA42T1/D PZTA42T1 SMD310 P1D transistor PDF

    pd 223 circuit

    Abstract: No abstract text available
    Text: ON Semiconductort PZTA42T1 High Voltage Transistor Surface Mount ON Semiconductor Preferred Device NPN Silicon SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Open Base


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    PZTA42T1 318E-04, O-261AA r14525 PZTA42T1/D pd 223 circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort PZTA42T1 High Voltage Transistor Surface Mount ON Semiconductor Preferred Device NPN Silicon SOT−223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Open Base


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    PZTA42T1 OT-223 318E-04, O-261AA PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort PZTA42T1 High Voltage Transistor Surface Mount ON Semiconductor Preferred Device NPN Silicon SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Open Base


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    PZTA42T1 318E-04, O-261AA PDF

    PNP Transistors

    Abstract: TO-205AD 40349
    Text: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation


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    O-205AD/TO-39 07-Sep-2010 PNP Transistors TO-205AD 40349 PDF

    DTS-411

    Abstract: DTS411 PNP Transistors
    Text: DTS411 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type DTS411 VCEV 300 hFE 30 IC 1.0 Notes VCEO 300 hFE A 1.0 COB Polarity NPN ICEV 300


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    DTS411 DTS411 O-204AA/TO-3 07-Sep-2010 DTS-411 PNP Transistors PDF

    40348

    Abstract: No abstract text available
    Text: 40348 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40348 VCEV 90 hFE 30 IC .30 Notes VCEO 65 hFE A .30 COB Polarity NPN ICEV Power Dissipation


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    O-205AD/TO-39 07-Sep-2010 40348 PDF

    NTE2311

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
    Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V


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    NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V PDF

    1A 300V TRANSISTOR

    Abstract: 300V transistor npn 2a NTE94 300V regulator TRANSISTOR 187
    Text: NTE94 Silicon NPN Transistor High Voltage Switch Description: The NTE94 is a silicon NPN transistor in a TO3 type case designed for medium to high voltage inverters, converters, regulators, and switching circuits. Features: D High Collector–Emitter Voltage: VCEO = 300V


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    NTE94 NTE94 200mA, 1A 300V TRANSISTOR 300V transistor npn 2a 300V regulator TRANSISTOR 187 PDF

    transistor D4203D

    Abstract: D4203D D4203 d4203d TRANSISTOR QW-R204-026 D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V
    Text: UNISONIC TECHNOLOGIES CO., LTD D4203D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC D4203D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high


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    D4203D D4203D QW-R204-026 transistor D4203D D4203 d4203d TRANSISTOR D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V PDF

    MJE2360T

    Abstract: MOTOROLA TRANSISTOR MJE2361T
    Text: MOTOROLA Order this document by MJE2360T/D SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT.


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    MJE2360T/D* MJE2360T/D MJE2360T MOTOROLA TRANSISTOR MJE2361T PDF

    complementary npn-pnp

    Abstract: complementary npn-pnp power transistors PNP 400V transistor 228 npn transistor 400V Silicon NPN Epitaxial Planar Type Surface mount NPN/PNP complementary transistor CYTA4494D Transistor PNP VCEO 400V dual transistor sot
    Text: Central CYTA4494D TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED COMPLEMENTARY NPN & PNP HIGH VOLTAGE SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYTA4494D type consists of one 1 NPN high voltage silicon transistor and one (1) complementary PNP high


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    CYTA4494D OT-228 11-August 10MHz complementary npn-pnp complementary npn-pnp power transistors PNP 400V transistor 228 npn transistor 400V Silicon NPN Epitaxial Planar Type Surface mount NPN/PNP complementary transistor CYTA4494D Transistor PNP VCEO 400V dual transistor sot PDF

    NPN Transistor VCEO 1000V

    Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
    Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:


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    NTE2310 NTE2310 100mA, NPN Transistor VCEO 1000V 1000v, NPN transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A PDF

    BCP68T1

    Abstract: BCP68T3 BCP69T1 SMD310
    Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the


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    BCP68T1 OT-223 r14525 BCP68T1/D BCP68T1 BCP68T3 BCP69T1 SMD310 PDF

    MJE13005D

    Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


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    MJE13005D MJE13005D QW-R502-379. HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D PDF

    to-126 HIGH SPEED SWITCHING transistor

    Abstract: mje13005d free transistor high power NPN 2A TO 126
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


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    MJE13005D MJE13005D QW-R203-040 to-126 HIGH SPEED SWITCHING transistor free transistor high power NPN 2A TO 126 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


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    MJE13005D MJE13005D QW-R502-379 PDF

    k03d3

    Abstract: 2N3303 MPQ3303 SFT01 4PD4
    Text: MPQ3303 silicon QUAD DUAL-IN-LINE NPN SILICON ANNULAR LOW-VOLTAGE HIGH-CURRENT TRANSISTORS QUAD DUAL-IN-LINE NPN SILICON LOW VOLTAGE HIGH CURRENT SWITCHING TRANSISTORS . , . designed fo r high-current, high-speed switching, and MOS trans­ lator applications.


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    MPQ3303 2N3303 O-116 k03d3 2N3303 MPQ3303 SFT01 4PD4 PDF

    mj411 transistor

    Abstract: MJ410 MJ411 of IC 4151 AN-4151
    Text: MJ410 SILICON MJ411 HIGH VOLTAGE. NPN SILICON TRANSISTORS 5 AMPERE . . . designed for medium to high voltage inverters, converters, regulators and sw itching circuits. • High Collector-Em itter Voltage — POWER TRANSISTORS NPN SILICON V c E O * 2 0 0 V o lts - M J410


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    MJ410 MJ411 MJ410 MJ410' MJ410â MJ411- mj411 transistor MJ411 of IC 4151 AN-4151 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • • • High Collector-Emitter Voltage —


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    PDF

    MPS3866

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor IC = 400 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol Value Unit VCEO


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    MPS3866 PDF

    K83 Package

    Abstract: MPQ1050 transistor k84 MHQ2221 MPQ2221 MPQ2222 MPQ105
    Text: MPQ1050 SILICON QUAD DUAL-IN-LINE NPN SILICON QUAD DUAL-IN-LINE NPN SILICON HIGH-CURRENT SWITCHING TRANSISTOR HIGH-CURRENT SWITCHING TRANSISTOR . . . designed for high-current, high-speed switching applications. • Low Colflector-Emitter Saturation Voltage —


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    MPQ1050 O-116 30Vdc 500mAdc, 50mAdc) MPQ2221 MPQ2222 MHQ2221 K83 Package MPQ1050 transistor k84 MPQ2221 MPQ105 PDF