BU108
Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —
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MJE2361T
MJE2360T
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BU108
TIP105 Darlington transistor
BDX54
BU326
BU100
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TIP36
Abstract: BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage —
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MJ410
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
TIP36
BD413
2SC331
BD139.6
BD139.10
BDW59
2sc2159
BD139.16
BD419
2SD364
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PZTA42T1
Abstract: SMD310 P1D transistor
Text: ON Semiconductort PZTA42T1 High Voltage Transistor Surface Mount ON Semiconductor Preferred Device NPN Silicon SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Open Base
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PZTA42T1
318E-04,
O-261AA
r14525
PZTA42T1/D
PZTA42T1
SMD310
P1D transistor
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pd 223 circuit
Abstract: No abstract text available
Text: ON Semiconductort PZTA42T1 High Voltage Transistor Surface Mount ON Semiconductor Preferred Device NPN Silicon SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Open Base
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PZTA42T1
318E-04,
O-261AA
r14525
PZTA42T1/D
pd 223 circuit
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort PZTA42T1 High Voltage Transistor Surface Mount ON Semiconductor Preferred Device NPN Silicon SOT−223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Open Base
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PZTA42T1
OT-223
318E-04,
O-261AA
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort PZTA42T1 High Voltage Transistor Surface Mount ON Semiconductor Preferred Device NPN Silicon SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Open Base
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PZTA42T1
318E-04,
O-261AA
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PNP Transistors
Abstract: TO-205AD 40349
Text: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation
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O-205AD/TO-39
07-Sep-2010
PNP Transistors
TO-205AD
40349
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DTS-411
Abstract: DTS411 PNP Transistors
Text: DTS411 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type DTS411 VCEV 300 hFE 30 IC 1.0 Notes VCEO 300 hFE A 1.0 COB Polarity NPN ICEV 300
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DTS411
DTS411
O-204AA/TO-3
07-Sep-2010
DTS-411
PNP Transistors
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40348
Abstract: No abstract text available
Text: 40348 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40348 VCEV 90 hFE 30 IC .30 Notes VCEO 65 hFE A .30 COB Polarity NPN ICEV Power Dissipation
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O-205AD/TO-39
07-Sep-2010
40348
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NTE2311
Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V
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NTE2311
NTE2311
npn 1000V 15A
NPN Transistor VCEO 1000V
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1A 300V TRANSISTOR
Abstract: 300V transistor npn 2a NTE94 300V regulator TRANSISTOR 187
Text: NTE94 Silicon NPN Transistor High Voltage Switch Description: The NTE94 is a silicon NPN transistor in a TO3 type case designed for medium to high voltage inverters, converters, regulators, and switching circuits. Features: D High Collector–Emitter Voltage: VCEO = 300V
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NTE94
NTE94
200mA,
1A 300V TRANSISTOR
300V transistor npn 2a
300V regulator
TRANSISTOR 187
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transistor D4203D
Abstract: D4203D D4203 d4203d TRANSISTOR QW-R204-026 D4203DL-T60-K to-126 npn switching transistor 400v npn transistor 400V
Text: UNISONIC TECHNOLOGIES CO., LTD D4203D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC D4203D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high
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D4203D
D4203D
QW-R204-026
transistor D4203D
D4203
d4203d TRANSISTOR
D4203DL-T60-K
to-126 npn switching transistor 400v
npn transistor 400V
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MJE2360T
Abstract: MOTOROLA TRANSISTOR MJE2361T
Text: MOTOROLA Order this document by MJE2360T/D SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT.
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MJE2360T/D*
MJE2360T/D
MJE2360T
MOTOROLA TRANSISTOR
MJE2361T
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complementary npn-pnp
Abstract: complementary npn-pnp power transistors PNP 400V transistor 228 npn transistor 400V Silicon NPN Epitaxial Planar Type Surface mount NPN/PNP complementary transistor CYTA4494D Transistor PNP VCEO 400V dual transistor sot
Text: Central CYTA4494D TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED COMPLEMENTARY NPN & PNP HIGH VOLTAGE SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYTA4494D type consists of one 1 NPN high voltage silicon transistor and one (1) complementary PNP high
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CYTA4494D
OT-228
11-August
10MHz
complementary npn-pnp
complementary npn-pnp power transistors
PNP 400V
transistor 228
npn transistor 400V
Silicon NPN Epitaxial Planar Type
Surface mount NPN/PNP complementary transistor
CYTA4494D
Transistor PNP VCEO 400V
dual transistor sot
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NPN Transistor VCEO 1000V
Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:
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NTE2310
NTE2310
100mA,
NPN Transistor VCEO 1000V
1000v, NPN
transistor VCE 1000V
transistor VCEO 1000V
TO218 package
transistor 1000V 6A
high voltage fast switching npn 4A
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BCP68T1
Abstract: BCP68T3 BCP69T1 SMD310
Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the
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BCP68T1
OT-223
r14525
BCP68T1/D
BCP68T1
BCP68T3
BCP69T1
SMD310
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MJE13005D
Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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MJE13005D
MJE13005D
QW-R502-379.
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
transistor MJE13005D
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to-126 HIGH SPEED SWITCHING transistor
Abstract: mje13005d free transistor high power NPN 2A TO 126
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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MJE13005D
MJE13005D
QW-R203-040
to-126 HIGH SPEED SWITCHING transistor
free transistor high power
NPN 2A TO 126
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,
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MJE13005D
MJE13005D
QW-R502-379
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k03d3
Abstract: 2N3303 MPQ3303 SFT01 4PD4
Text: MPQ3303 silicon QUAD DUAL-IN-LINE NPN SILICON ANNULAR LOW-VOLTAGE HIGH-CURRENT TRANSISTORS QUAD DUAL-IN-LINE NPN SILICON LOW VOLTAGE HIGH CURRENT SWITCHING TRANSISTORS . , . designed fo r high-current, high-speed switching, and MOS trans lator applications.
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MPQ3303
2N3303
O-116
k03d3
2N3303
MPQ3303
SFT01
4PD4
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mj411 transistor
Abstract: MJ410 MJ411 of IC 4151 AN-4151
Text: MJ410 SILICON MJ411 HIGH VOLTAGE. NPN SILICON TRANSISTORS 5 AMPERE . . . designed for medium to high voltage inverters, converters, regulators and sw itching circuits. • High Collector-Em itter Voltage — POWER TRANSISTORS NPN SILICON V c E O * 2 0 0 V o lts - M J410
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MJ410
MJ411
MJ410
MJ410'
MJ410â
MJ411-
mj411 transistor
MJ411
of IC 4151
AN-4151
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • • • High Collector-Emitter Voltage —
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MPS3866
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor IC = 400 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol Value Unit VCEO
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MPS3866
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K83 Package
Abstract: MPQ1050 transistor k84 MHQ2221 MPQ2221 MPQ2222 MPQ105
Text: MPQ1050 SILICON QUAD DUAL-IN-LINE NPN SILICON QUAD DUAL-IN-LINE NPN SILICON HIGH-CURRENT SWITCHING TRANSISTOR HIGH-CURRENT SWITCHING TRANSISTOR . . . designed for high-current, high-speed switching applications. • Low Colflector-Emitter Saturation Voltage —
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MPQ1050
O-116
30Vdc
500mAdc,
50mAdc)
MPQ2221
MPQ2222
MHQ2221
K83 Package
MPQ1050
transistor k84
MPQ2221
MPQ105
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