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    SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE Search Results

    SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    n24 transistor

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are


    Original     		PDF MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 MMDT8050SL-AL6-R QW-R218-012 n24 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are


    Original     		PDF MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R MMDT8150L-AL6-R OT-363 QW-R218-017

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR „ DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTC’s advanced technology to provide the customers with high DC


    Original     		PDF TC200 TC200 TC200L-x-T92-B TC200G-x-T92-B TC200L-x-T92-K TC200G-x-T92-K QW-R201-087

    Silicon NPN Epitaxial Planar Type

    Abstract: NPN Silicon Epitaxial Planar Transistor 2SD2098
    Text: 2SD2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Description The 2SD2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE SAT =0.25V


    Original     		PDF 2SD2098 OT-89 2SD2098 100MHz 01-Jun-2002 Silicon NPN Epitaxial Planar Type NPN Silicon Epitaxial Planar Transistor

    e50u

    Abstract: 2SD2098 BCP2098 NPN Silicon Epitaxial Planar Transistor
    Text: BCP2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogan & lead-free Description SOT-89 The BCP2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics


    Original     		PDF BCP2098 OT-89 BCP2098 50VEB 100MHz 01-Jun-2002 2SD2098 e50u 2SD2098 NPN Silicon Epitaxial Planar Transistor

    MMST2222A

    Abstract: MMST2907A
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor MMST2222A FEATURES z Epitaxial planar die construction. Pb z Complements the MMST2907A. Lead-free z Ultra-small surface mount package. APPLICATIONS z NPN Silicon Epitaxial Planar Transistor.


    Original     		PDF MMST2222A MMST2907A. OT-323 BL/SSSTF006 MMST2222A MMST2907A

    BCP2098

    Abstract: No abstract text available
    Text: BCP2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION The BCP2098 is an epitaxial planar type NPN silicon transistor. 4 1 FEATURES   2 3


    Original     		PDF BCP2098 OT-89 BCP2098 BCP2098-Q BCP2098-R 100MHz 19-May-2011

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER


    Original     		PDF 2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025

    2SD1664

    Abstract: 2SB1132
    Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER


    Original     		PDF 2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025 2SB1132

    sot323 transistor marking

    Abstract: transistor marking PB 2SC4102W TRANSISTOR BL 560 marking G SOT323 Transistor F 323 BR transistor cr marking pb 05 transistor sot323 marking K Transistor marking S
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4102W FEATURES z Excellent hFE linearity. z Power dissipation:PCM=200mW Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No.


    Original     		PDF 2SC4102W 200mW OT-323 BL/SSSTF037 sot323 transistor marking transistor marking PB 2SC4102W TRANSISTOR BL 560 marking G SOT323 Transistor F 323 BR transistor cr marking pb 05 transistor sot323 marking K Transistor marking S

    transistor marking PB

    Abstract: Transistor marking BQ sot marking code BQ sot323 transistor marking 2SC4081W transistor bq
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4081W FEATURES z Excellent hFE linearity. z Complements the 2A1576A Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No.


    Original     		PDF 2SC4081W 2A1576A OT-323 BL/SSSTF002 transistor marking PB Transistor marking BQ sot marking code BQ sot323 transistor marking 2SC4081W transistor bq

    transistor marking PB

    Abstract: transistor cr marking transistor CR marking G SOT323 Transistor 2SC4097W marking CQ marking code cp transistor CR NPN Transistor marking code K NPN Silicon Epitaxial Planar Transistor
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4097W FEATURES z Excellent hFE linearity. z Power dissipation:PCM=200mW Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No.


    Original     		PDF 2SC4097W 200mW OT-323 BL/SSSTF003 transistor marking PB transistor cr marking transistor CR marking G SOT323 Transistor 2SC4097W marking CQ marking code cp transistor CR NPN Transistor marking code K NPN Silicon Epitaxial Planar Transistor

    Untitled

    Abstract: No abstract text available
    Text: Qs.iisy <£fLmi-Conciuctoi '[P'loducti., Una. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed


    Original     		PDF 2SC1324 770MHz 770MHz. 500MH2.

    sot-23 npn marking code cr

    Abstract: sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2411 Marking Package Code


    Original     		PDF 2SC2411 200mW OT-23 BL/SSSTC097 sot-23 npn marking code cr sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04

    transistor bq

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Pb Low Cob,Cob=2.0pF. z z Lead-free Complementary to 2SA1037 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412


    Original     		PDF 2SC2412 2SA1037 OT-23 BL/SSSTC020 transistor bq

    marking BQ sot-23

    Abstract: marking Bq sot23 2SC2412 bq transistor sot23 sot-23 CODE BS Transistor marking BQ 12V marking code sot 23 marking BS SOT23 sot-23 MARKING CODE BS transistor 12v 1A NPN
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Pb Low Cob,Cob=2.0Pf z z Lead-free Complementary to 2SA1037 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412


    Original     		PDF 2SC2412 2SA1037 OT-23 BL/SSSTC020 marking BQ sot-23 marking Bq sot23 2SC2412 bq transistor sot23 sot-23 CODE BS Transistor marking BQ 12V marking code sot 23 marking BS SOT23 sot-23 MARKING CODE BS transistor 12v 1A NPN

    2SC2312

    Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
    Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating


    OCR Scan     		PDF 2SC2312 27MHz 27MHz, -30dB -62dB -65dB. 2SC2312 100mA 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb

    2SC1947 equivalent

    Abstract: 2sc1947 RF Power Amplifiers 1P H transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm


    OCR Scan     		PDF 2SC1947 175MHz 175MHz 2SC1947 2SC1947 equivalent RF Power Amplifiers 1P H transistor

    air variable capacitor

    Abstract: POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC3102 2SC310 mica capacitor mica material capacitor murata pir
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed for high power amplifiers applications in UHF band. Dimensions in mm R1 FEATURES


    OCR Scan     		PDF 2SC3102 2SC3102 PoS60W, 520MHz, 520MHz. 520MHz) 100pF to10pF air variable capacitor POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC310 mica capacitor mica material capacitor murata pir

    2SC1729

    Abstract: 1 w NPN EPITAXIAL PLANAR TYPE
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1729 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio amplications. Dimensions in mm FEATURES • •


    OCR Scan     		PDF 2SC1729 175MHz 175MHz. T-31E 175MHz 1 w NPN EPITAXIAL PLANAR TYPE

    transistor D 2331

    Abstract: 2331 TRANSISTOR T31B
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES


    OCR Scan     		PDF 2SC4838 2SC4838 65GHz. 65GHz, transistor D 2331 2331 TRANSISTOR T31B

    2SC1324

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. Dim ensions in mm FEATURES •


    OCR Scan     		PDF 2SC1324 2SC1324 770MHz

    12w 5d

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES


    OCR Scan     		PDF 2SC3629 2SC3629 520MHz, 12w 5d

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •


    OCR Scan     		PDF 2SC1968A 2SC1968A 470MHz 470MHz.