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    SILICON PHOTODIODE CHIP Search Results

    SILICON PHOTODIODE CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    SILICON PHOTODIODE CHIP Datasheets Context Search

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    high speed photodiode detector circuit

    Abstract: KDP6004A PIN Photodiode Si pin photodiode module Photodiode pin sensitivity silicon pin photodiode rise time of silicon photodiode 700NM IR photodiode ir photodiode wavelength
    Text: Silicon PIN Photodiode KDP6004A Dimensions The KDP6004A is high-speed silicon pin photodiode [Unit : mm] in COB package and responds to wavelengths from 700nm to 1050nm. Features Higly sensitive Si PIN photodiode. Chip On Board package. High speed response.


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    PDF KDP6004A KDP6004A 700nm 1050nm. 2856K high speed photodiode detector circuit PIN Photodiode Si pin photodiode module Photodiode pin sensitivity silicon pin photodiode rise time of silicon photodiode IR photodiode ir photodiode wavelength

    IR photodiode

    Abstract: PIN Photodiode vr 1K 700NM photodiode si pin photodiode KDP6004A rise time of photodiode rise time of silicon photodiode 1K VR
    Text: NEW PRODUCT Silicon PIN Photodiode KDP6004A Description The KDP6004A is high-speed silicon pin photodiode in COB package and responds to wavelengths from 700nm to 1050nm. Features - High sensitive Si PIN Photodiode - Chip on Board Package - High Speed Response


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    PDF KDP6004A KDP6004A 700nm 1050nm. 1000Lux IR photodiode PIN Photodiode vr 1K photodiode si pin photodiode rise time of photodiode rise time of silicon photodiode 1K VR

    S268P

    Abstract: No abstract text available
    Text: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant


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    PDF S268P S268P D-74025 15-Jul-96

    CD 8403

    Abstract: S268P
    Text: TELEFUNKEN Semiconductors S 268 P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides


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    PDF S268P D-74025 CD 8403

    S268P

    Abstract: No abstract text available
    Text: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


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    PDF S268P S268P D-74025 20-May-99

    S268P

    Abstract: silicon photodiode array
    Text: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


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    PDF S268P S268P D-74025 20-May-99 silicon photodiode array

    S268P

    Abstract: No abstract text available
    Text: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


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    PDF S268P S268P D-74025 20-May-99

    S268P

    Abstract: Photodiode Array
    Text: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


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    PDF S268P S268P D-74025 20-May-99 Photodiode Array

    Untitled

    Abstract: No abstract text available
    Text: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


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    PDF S268P S268P 08-Apr-05

    S268P

    Abstract: silicon photodiode array
    Text: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


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    PDF S268P S268P 18-Jul-08 silicon photodiode array

    pd-0120u

    Abstract: UV photodiode
    Text: SILICON UV-ENHANCED PHOTODIODE CHIPS DEVICE NO. : PD-0120U 1. Scope : This specification applies to PIN silicon uv-enhanced photodiode chips, Device No. PD-0120U. 2. Structure : 2-1. Planar type : pin diode. 2-2. Electrodes : Top side Anode : Aluminum alloy .


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    PDF PD-0120U PD-0120U. pd-0120u UV photodiode

    PD-3073

    Abstract: 905nm
    Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-3073 1. Scope : This specification applies to PIN silicon photodiode chips, Device No. PD-3073 2. Structure : 2-1. Planar type : Pin diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . (Cathode ) : Aluminum alloy .


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    PDF PD-3073 038mm) 153mm× 190mm× 100uA 905nm PD-3073 905nm

    PD-0394

    Abstract: No abstract text available
    Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-0394 1. Scope : This specification applies to PIN silicon photodiode chips, Device No. PD-0394. 2. Structure : 2-1. Planar type : PIN diode. 2-2. Electrodes : Top side : aluminum alloy . Back side cathode : gold alloy.


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    PDF PD-0394 PD-0394. PD-0394

    VTD34FSM

    Abstract: bpw photodiode
    Text: SILICON PHOTODIODE VTD34FSM BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.


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    PDF VTD34FSM VTD34FSM bpw photodiode

    QSE773

    Abstract: PIN Photodiode IR photodiode Photodiode a C-32V
    Text: QSE773 Sidelooker Pin Photodiode Features Description • Daylight filter The QSE773 is a plastic silicon pin photodiode in a sidelooker package. ■ Sidelooker package ■ Pin photodiode ■ Wide reception angle, 120° ■ Chip size = 0.107 sq. inches 2.71 sq. mm


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    PDF QSE773 QSE773 PIN Photodiode IR photodiode Photodiode a C-32V

    QSE773

    Abstract: IR LED direct exposure to photodiode
    Text: QSE773 Sidelooker Pin Photodiode Features Description • Daylight filter The QSE773 is a plastic silicon pin photodiode in a sidelooker package. ■ Sidelooker package ■ Pin photodiode ■ Wide reception angle, 120° ■ Chip size = 0.107 sq. inches 2.71 sq. mm


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    PDF QSE773 QSE773 IR LED direct exposure to photodiode

    IR photodiode sensor

    Abstract: Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 C4351 silicon photodiode array Photodiode Array 2d Linear Image sensor IC
    Text: Photodiode Arrays/Linear Image Sensors 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES For various measuring purpose This photodiode consists of 16 elem ents of Silicon Photodiode having active area of 1.175mm (width X 2.0mm (height) with 1.575mm pitch. This diode is


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    PDF 16-ELEMENT S5668 175mm 575mm 46-ELEMENT C4351 IR photodiode sensor Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 silicon photodiode array Photodiode Array 2d Linear Image sensor IC

    BPX92

    Abstract: No abstract text available
    Text: SIEMENS BPX92 SILICON PHOTODIODE FEATURES * Silicon Planar Photodiode * Transparent Plastic Case * 0.2* 5.08 mm Lead Spacing * Low D ark Current, 1 nA Maximum Ratings DESCRIPTION The BPX 92 is a silicon planar photodiode in a transparent plastic package. Its terminals


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    PDF BPX92 BPX92

    Siemens photodiode BPW32

    Abstract: BPW32
    Text: SIEMENS BPW32 SILICON PHOTODIODE VERY LOW DARK CURRENT Package Dimensions in Inches mm Chip position Photosensitive area .039 x 039 ( t x 1) FEATURES * Silicon Planar Photodiode * N-Si Material: Anode=Front Contact, Cathode=Back Contact * High Reliability


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    PDF BPW32 as3b32b Siemens photodiode BPW32 BPW32

    Siemens photodiode BPW32

    Abstract: BPW32 Siemens photodiode visible light
    Text: SIEMENS BPW32 SILICON PHOTODIODE VERY LOW DARK CURRENT Package Dimensions in Inches mm Chip position 024 (.6 ) .016 (. 4 ) 1 FEATURES * Silicon Planar Photodiode * N-Si Material: Anode=Front Contact, Cathode=Back Contact * High Reliability * No Testable Degradation


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    PDF BPW32 Siemens photodiode BPW32 BPW32 Siemens photodiode visible light

    U850

    Abstract: 2057 Siemens photodiode visible light
    Text: SIEMENS KOM 2057 L 3-CHIP SILICON PIN PHOTODIODE ARRAY FEATURES Package Dimensions in mm * Silicon Photodiode in Planar Technology * N-Sl Material Anode, Front Contact Cathode, Back Contact * High Reliability * High Packing Oensity * Low Noise * No Testable Degradation


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    PDF M2057L U850 2057 Siemens photodiode visible light

    Untitled

    Abstract: No abstract text available
    Text: OPTEK Product Bulletin OP999 June 1996 PIN Silicon Photodiode Type OP999 Features • • • • Narrow receiving angle Linear response vs. irradiance Fast switching time T-1 3/4 package style Description The OP999 photodiode consists of a PIN silicon photodiode mounted in a dark


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    PDF OP999 OP999

    quadrant photodiode

    Abstract: SFH244S t2856
    Text: SFH244S SILICON FOUR QUADRANT PHOTODIODE FEATURES Maxim um Ratings * Silicon Photodiode in Planar Technology Operating and Storage Temperature T0p, T3 tg .-40°C to +80°C Isolation Voltage fV,s) . 100 V


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    PDF SFH244S SFH244 quadrant photodiode SFH244S t2856

    BPW32

    Abstract: Siemens photodiode visible light bpw 32 3cj6 bpw photodiode S1027
    Text: SIEMENS BPW 32 SILICON PHOTODIODE VERY LOW DARK CURRENT Package Dimensions in Inches mm Chip position Photosensitive area .039 x 039 ( t x 1) FEATURES * Silicon Planar Photodiode * Wide Temperature Range * Usage: Visible and Near Infrared Range (350 to 1100 nm)


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    PDF as3b32b BPW32 Siemens photodiode visible light bpw 32 3cj6 bpw photodiode S1027