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    SILICON TRANSISTOR VCBO 800 VCEO 900 IC 4A Search Results

    SILICON TRANSISTOR VCBO 800 VCEO 900 IC 4A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON TRANSISTOR VCBO 800 VCEO 900 IC 4A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2GM sot-23 transistor

    Abstract: marking code 1AM 2N3904 SOT-23 MARKING CODE bc857 to92 TRANSISTOR 1g sot23 npn pin configuration NPN transistor BC817 sot-23 TS560 1aM sot-23 transistor bc848 to 92 BC848 e BC818
    Text: BC807, BC808 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,


    Original     		PDF BC807, BC808 OT-23 BC817 BC818 OT-23 2GM sot-23 transistor marking code 1AM 2N3904 SOT-23 MARKING CODE bc857 to92 TRANSISTOR 1g sot23 npn pin configuration NPN transistor BC817 sot-23 TS560 1aM sot-23 transistor bc848 to 92 BC848 e BC818

    NTE2309

    Abstract: No abstract text available
    Text: NTE2309 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V


    Original     		PDF NTE2309 NTE2309

    PHE13009

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,


    Original     		PDF PHE13009 PHE13009 O220AB

    hs 527

    Abstract: BUJ304A
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


    Original     		PDF BUJ304A O220AB hs 527 BUJ304A

    BUJ106A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


    Original     		PDF BUJ106A O220AB BUJ106A

    BUJ103AX

    Abstract: BP317 BU1706AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		PDF BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX

    BP317

    Abstract: BU1706AX BUJ204AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		PDF BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


    Original     		PDF BUJ103A O220AB SCA60 135104/240/02/pp12

    BUJ204A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


    Original     		PDF BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A

    2sc3153

    Abstract: No abstract text available
    Text: Ordering number:EN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3153] 1 : Base


    Original     		PDF EN1072D 2SC3153 00V/6A VCBO900V) 2SC3153] 2sc3153

    BU1706AX

    Abstract: BUJ106AX
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


    Original     		PDF BUJ106AX BU1706AX BUJ106AX

    BU1706AX

    Abstract: BUJ304AX
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


    Original     		PDF BUJ304AX BU1706AX BUJ304AX

    buj103

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


    Original     		PDF BUJ103AU OT533 buj103

    100C

    Abstract: BUJ103AU
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


    Original     		PDF BUJ103AU OT533 100C BUJ103AU

    silicon transistor Vcbo 800 Vceo 1000 Ic 20A

    Abstract: ELECTRONIC BALLAST philips PHE13005
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13005 GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,


    Original     		PDF PHE13005 PHE13005 O220AB silicon transistor Vcbo 800 Vceo 1000 Ic 20A ELECTRONIC BALLAST philips

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		PDF n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493

    2SC3153

    Abstract: X0131
    Text: Ordering number:ENN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3153] 15.6


    Original     		PDF ENN1072D 2SC3153 00V/6A VCBO900V) 2SC3153] PW300 Cycle10% 2SC3153 X0131

    buh513

    Abstract: No abstract text available
    Text: BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor The BUH51 has an application specific state−of−art die designed for use in 50 W Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the startup conditions or under a short


    Original     		PDF BUH51 BUH51/D buh513

    Untitled

    Abstract: No abstract text available
    Text: BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor The BUH51 has an application specific state−of−art die designed for use in 50 W Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the startup conditions or under a short


    Original     		PDF BUH51 BUH51 BUH51/D

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5354 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5354 HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • • Excellent Switching Times : tr = 0.7;«s Max.


    OCR Scan     		PDF 2SC5354

    2sc3153

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r: ENÎ072D 2SC3153 NO.1072D NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • High breakdown voltage V cbo = 900V . • Fast switching time. • Wide ASO. Absolute Maximum Ratings at Ta = 25°C


    OCR Scan     		PDF T072D l072D 2SC3153 2sc3153

    MG200Q1UK1

    Abstract: silicon transistor Vcbo 800 Vceo 900 Ic 4A
    Text: GTR MODULE MG200Q1UK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in M OTOR CONTROL APPLICATIONS. 1 2 ¿as 20±& 5 3 -M 6 FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: h p E = 1 0 0 M i n . (Ic=200A)


    OCR Scan     		PDF MG200Q1UK1 MG200Q1UK1 silicon transistor Vcbo 800 Vceo 900 Ic 4A

    MG200Q1UK1

    Abstract: MBX 240 A3 TOSHIBA
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200Q1UK1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. / FEATURES: . The Collector 4-06-5 ±0.3 is Isolated from Case 1 . With Built-in Free Wheeling Diode . High DC Current Gain: &


    OCR Scan     		PDF MG200Q1UK1 MG200Q1UK1 MBX 240 A3 TOSHIBA

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn