Untitled
Abstract: No abstract text available
Text: Product Group: Vishay Siliconix, ICs / December 2014 Author: Ralph Monteiro Tel: 1 408-970-5233 E-mail: ralph.monteiro@vishay.com Vishay's New VRPower Integrated DrMOS Power Stages Deliver High Power Density for Multiphase POL Regulators Product Benefits:
|
Original
|
MLP66-40L
MLP55-31L
MLP4535-22L
SiC620R
SiC620AR
SiC620,
SiC620A
SiC789,
SiC789A
SiC788,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Group: Vishay Siliconix, Power ICs / October 2014 Author: Ralph Monteiro Tel: 1 408-970-5233 E-mail: ralph.monteiro@vishay.com New VRPower Integrated DrMOS Power Stages Deliver High Current, Efficiency, and Power Density Vishay Intertechnology, Inc. NYSE: VSH introduces a new family of VRPower integrated DrMOS power
|
Original
|
31-pin
SiC620
31-pio
SiC620)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Group: Vishay Siliconix, Power ICs / August 2014 Author: Ralph Monteiro Tel: 1 408-970-5233 E-mail: ralph.monteiro@vishay.com 3 A Synchronous Buck Regulator With Fixed 650 kHz Switching Frequency in Space-Saving 3 mm by 3 mm Package Vishay Intertechnology, Inc. NYSE: VSH introduces the latest member of its microBuck family of
|
Original
|
SiP12116
DFN10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4101DY-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
|
Si4101DY-GE3
AN609,
2643m
6512m
8170m
4792m
2540m
1945m
5612m
09-Jan-13
|
PDF
|
24-14165
Abstract: No abstract text available
Text: SiHF7N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
|
SiHF7N60E
AN609,
3955m
0045m
1988m
1516m
8909m
6504m
04-Apr-12
24-14165
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA533EDJ Vishay Siliconix N-Channel and P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized
|
Original
|
SiA533EDJ
18-Jul-08
|
PDF
|
52308
Abstract: SiC714CD10-T1 SiC714CD10
Text: SiC714CD10 New Product Vishay Siliconix Fast Switching MOSFETs With Integrated Driver FEATURES PRODUCT SUMMARY Input Voltage Range D D D D D D Low–side MOSFET control pin for pre–bias start–up Undervoltage Lockout for safe operation Internal boostrap diode reduces component count
|
Original
|
SiC714CD10
08-Apr-05
52308
SiC714CD10-T1
|
PDF
|
V745
Abstract: si7154dp a4940
Text: SPICE Device Model Si7154DP Vishay Siliconix N-Channel 20V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si7154DP
S-71595Rev.
06-Aug-07
V745
a4940
|
PDF
|
E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
|
Original
|
DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7154DP Vishay Siliconix N-Channel 20V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si7154DP
18-Jul-08
|
PDF
|
SiC714CD10
Abstract: No abstract text available
Text: SiC714CD10 New Product Vishay Siliconix Fast Switching MOSFETs With Integrated Driver FEATURES PRODUCT SUMMARY Input Voltage Range D D D D D D Low–side MOSFET control pin for pre–bias start–up Undervoltage Lockout for safe operation Internal boostrap diode reduces component count
|
Original
|
SiC714CD10
52308--Rev.
31-Oct-05
|
PDF
|
IHLP4040
Abstract: TMK325B7106MN-T PK007-015 si4812B GRM32ER71C226ME18L VJ0603Y104KXACW1BC VISHAY MARKING sm SiC413 VJ0402Y103KXACW1BC VJ0603Y101KXACW1BC
Text: SiC413DB Vishay Siliconix SiC413 Reference Board User's Manual 4 A, 26 V Integrated Synchronous Buck Regulator THE CHIP FEATURES PRODUCT SUMMARY Input Voltage Range 4.75 V to 26 V Output Voltage Range 0.6 V to 13.2 V Operating Frequency 500 kHz Continuous Output Current
|
Original
|
SiC413DB
SiC413
CRCW06032K21FKEA
CRCW0603750KFKEA
CRCW060320K0FKEA
SiC413
S09-1350-Rev.
IHLP4040
TMK325B7106MN-T
PK007-015
si4812B
GRM32ER71C226ME18L
VJ0603Y104KXACW1BC
VISHAY MARKING sm
VJ0402Y103KXACW1BC
VJ0603Y101KXACW1BC
|
PDF
|
Si8417DB
Abstract: si8417
Text: Si8417DB New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY –12 FEATURES rDS(on) (W) ID (A)a 0.021 @ VGS = –4.5 V –14.5 0.026 @ VGS = –2.5 V –13.0 0.033 @ VGS = –1.8 V –11.5 VDS (V) Qg (Typ) 35 nC D TrenchFETr Power MOSFET
|
Original
|
Si8417DB
Si8417DB-T2
08-Apr-05
si8417
|
PDF
|
IGBT 60A spice model
Abstract: 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola
Text: Semiconductor Packages and Case Outlines Reference Manual CASERM/D Rev. 2, September−2006 SCILLC, 2006 Previous Edition © 2003 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
|
Original
|
September-2006
IGBT 60A spice model
8 pin ic 3842
motorola an569 thermal
IR 948P
0.65mm pitch BGA socket
bt 2323
DFN 3.3X3.3
HTC Korea
SPICE thyristor model
527 MOSFET TRANSISTOR motorola
|
PDF
|
|
|
power tmos
Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
Text: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003 SCILLC, 2003 Previous Edition 2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
|
Original
|
Aug-2003
power tmos
936G
PR 751S
K1 MARK 6PIN SOT-363
carrier chiller
mc10116
MC10H210
mmsf5n03hd
0j sod-523
CASERM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si8417DB New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY –12 FEATURES rDS(on) (W) ID (A)a 0.021 @ VGS = –4.5 V –14.5 0.026 @ VGS = –2.5 V –13.0 0.033 @ VGS = –1.8 V –11.5 VDS (V) Qg (Typ) 35 nC D TrenchFETr Power MOSFET
|
Original
|
Si8417DB
Si8417DB-T2
08-Apr-05
|
PDF
|
Si7457DP
Abstract: No abstract text available
Text: SPICE Device Model Si7457DP Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si7457DP
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SQ3457EV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
SQ3457EV
AN609,
9575u
6060u
4676m
7428m
5982m
9444m
4534m
18-Jun-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUR50N06-07L New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY (A)c D TrenchFETr Power MOSFETS D 175_C Junction Temperature 0.0074 @ VGS = 10 V 96 APPLICATIONS 0.0088 @ VGS = 4.5 V 88 V(BR)DSS (V) rDS(on) (W) 60 ID RoHS
|
Original
|
SUR50N06-07L
O-252
SUR50N06-07L--E3
08-Apr-05
|
PDF
|
sup50n03
Abstract: 557-538
Text: SUP50N03-5m1P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
SUP50N03-5m1P
AN609,
31-May-10
sup50n03
557-538
|
PDF
|
si7457
Abstract: Si7457DP ic MARKING QG
Text: Si7457DP New Product Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.042 @ VGS = –10 V –28 0.045 @ VGS = –6 V –28 VDS (V) –100 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS RoHS D High Side Switch D Motor Drives
|
Original
|
Si7457DP
Si7457DP-T1--E3
51337--Rev.
25-Jul-05
si7457
ic MARKING QG
|
PDF
|
SI7457DP
Abstract: No abstract text available
Text: Si7457DP New Product Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.042 @ VGS = –10 V –28 0.045 @ VGS = –6 V –28 VDS (V) –100 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS RoHS D High Side Switch D Motor Drives
|
Original
|
Si7457DP
Si7457DP-T1--E3
08-Apr-05
|
PDF
|
PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
|
OCR Scan
|
J-23548
K28742
PA 0016 PIONEER
Pioneer PA 0016
transistors br 6822
MPF104
I9951D
Johnson motor 2 607 022 013
2SK109 equivalent
V01000J
DG5043CK
IRF4431
|
PDF
|
siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
|
OCR Scan
|
J-23548
K24123
i39-40i
NZ3766
53-C-03
siliconix fet
Transistor E112 FET N-Channel
JFET TRANSISTOR REPLACEMENT GUIDE j201
E112 jfet
jfet bfw10 terminals
JFET BFW10 SPECIFICATIONS
4856a mosfet
Transistor E112 FET
FETs in Balanced Mixers Ed Oxner
equivalent components FET BFW10
|
PDF
|