PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
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J-23548
K28742
PA 0016 PIONEER
Pioneer PA 0016
transistors br 6822
MPF104
I9951D
Johnson motor 2 607 022 013
2SK109 equivalent
V01000J
DG5043CK
IRF4431
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sd5002 siliconix
Abstract: No abstract text available
Text: SILICONIX INC IflE D •3 T Siliconix X V • Ö5S473S 7 ■ SD5000 SERIES T '- s m i in c o rp o ra te d DGISbMQ N-Channel Lateral DMOS Quad FETs The Siliconix SD5000 Series is a monolithic array of single-pole, single-throw analog switches designed for high speed switching in audio, video ancl
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5S473S
SD5000
SD5001
SD5002
sd5002 siliconix
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SD5000
Abstract: AN301 SD210 mosfet 2n7000 siliconix sd210 SD5400 SST211 2N7000 LH0063 SD210DE
Text: AN301 Siliconix HighĆSpeed DMOS FET Analog Switches and Switch Arrays Jack Armijos Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of highĆspeed analog switches and switch arrays. It contains an
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AN301
SD210/5000
SD210
SD5000
SST211,
SD5400
2N4959
MRF904
AN301
mosfet 2n7000
siliconix sd210
SD5400
SST211
2N7000
LH0063
SD210DE
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siliconix sd211 de
Abstract: No abstract text available
Text: jre s s ä SD211 de s e rie s N-Channel Lateral DMOS FETs The SD211DE Series of single-pole, single-throw analog switches is designed for high speed switching in audio, video, and high-frequency applications. These devices are designed on the Siliconix DMOS
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SD211
SD211DE
SD215DE
O-206AF)
SD5000
siliconix sd211 de
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Untitled
Abstract: No abstract text available
Text: m SZS S DMCB SERIES DIE N-Channel Lateral DMOS FETs The D M CB Series of single-pole, single-throw analog SD210DE SD214DE video, and high-frequency applications. These devices are designed on the Siliconix DMOS process and utilize lateral construction to achieve low capacitance of
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SD210DE
SD214DE
SD211DE
SD215DE
SST211
SST215
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SILICONIX SD21
Abstract: TO-206A sd211de
Text: B & ffA SD21 ODE SERIES N-Channel Lateral DMOS FETs The SD210DE Series of single-pole, single-throw analog switches is designed for high speed switchign in audio, video, and high-frequency applications. These devices are designed on the Siliconix DMOS process and utilize lateral construction to achieve low
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SD210DE
SD214DE
O-206AF)
SD5000
SO-14
20nnA
SILICONIX SD21
TO-206A
sd211de
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AN301
Abstract: SD211 SD211DE SD213DE SD214 SD215DE SST211 SST213 SST215 SST215 SILICONIX
Text: SD211DE/SST211 Series Siliconix NĆChannel Lateral DMOS FETs SD211DE SD213DE SD215DE Product Summary Part Number V BR DS Min (V) SST211 SST213 SST215 VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10
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SD211DE/SST211
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
AN301
SD211
SD211DE
SD213DE
SD214
SD215DE
SST211
SST213
SST215
SST215 SILICONIX
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Untitled
Abstract: No abstract text available
Text: SD210DE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE-2
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SD210DE-2/214DE-2
SD210DE-2
SD214DE-2
08-Apr-05
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SD214DE
Abstract: sd210de AN502 SD210DE-2 SD214DE-2 SD5000I-2
Text: SD210DE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE-2
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SD210DE-2/214DE-2
SD210DE-2
SD214DE-2
S-02889--Rev.
21-Dec-00
SD214DE
sd210de
AN502
SD210DE-2
SD214DE-2
SD5000I-2
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SD210DE-2
Abstract: SD210DE AN502 SD214DE-2 SD5000I-2
Text: SD210DE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE-2
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SD210DE-2/214DE-2
SD210DE-2
SD214DE-2
18-Jul-08
SD210DE-2
SD210DE
AN502
SD214DE-2
SD5000I-2
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J201 Replacement
Abstract: "DUAL N-Channel JFET" 2n4416 transistor die fairchild Dual N-Channel JFET n-channel JFET sot23-6 2n3956 equivalent transistor G1 TRANSISTOR SOT 23 PNP Siliconix "low noise jfet" J507 Replacement LS5912C
Text: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS
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LS5911
LS5912
LS5912C
2N5911
2N5912
10kHz)
100MHz)
500mW
OT-23
J201 Replacement
"DUAL N-Channel JFET"
2n4416 transistor die fairchild
Dual N-Channel JFET
n-channel JFET sot23-6
2n3956 equivalent transistor
G1 TRANSISTOR SOT 23 PNP
Siliconix "low noise jfet"
J507 Replacement
LS5912C
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smt a1 transistor
Abstract: smt a1 transistor NPN J507 Replacement n channel 2n4393 2n4416 transistor spice jfet photo diode u406 type u405 siliconix
Text: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ∆CR ≤ 0.2pF ABSOLUTE MAXIMUM RATINGS1 DPAD DPAD1 TO-72 BOTTOM VIEW TO-78
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500mW
smt a1 transistor
smt a1 transistor NPN
J507 Replacement
n channel 2n4393
2n4416 transistor spice
jfet photo diode
u406 type
u405 siliconix
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low noise dual P-Channel JFET
Abstract: 2n5019
Text: 2N5018 SERIES SINGLE P-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE 75Ω TO-18 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated Maximum Temperatures
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2N5018
-50mA
500mW
low noise dual P-Channel JFET
2n5019
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SD211DE-2
Abstract: AN502 SD213DE-2 SD214DE-2 SD215DE-2 sd211de
Text: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE-2
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SD211DE-2/213DE-2/215DE-2
SD211DE-2
SD213DE-2
SD215DE-2
S-02889--Rev.
21-Dec-00
SD211DE-2
AN502
SD213DE-2
SD214DE-2
SD215DE-2
sd211de
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VCR11N
Abstract: fet j310 surface mount pico-amp diode j510 high voltage pnp transistor SST511
Text: VCR11N N-CHANNEL JFET VOLTAGE CONTROLLED RESISTOR Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX VCR11N VOLTAGE CONTROLLED RESISTANCE 100 to 200Ω 1 ABSOLUTE MAXIMUM RATINGS TO-71 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures
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VCR11N
VCR11N
300mW
fet j310
surface mount pico-amp diode
j510
high voltage pnp transistor
SST511
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TO72 package n-channel jfet
Abstract: PAD1 Spice transistor 2N4393 ls n channel jfet jfet j112 u406 type 2N5019 "direct replacement" J201 Replacement JPAD500
Text: PAD SERIES PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE BVR ≥ -30V PAD1,2,5 PAD* Crss ≤ 2.0pF TO-72 BOTTOM VIEW TO-72 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1
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300mW
350mW
OT-23
TO72 package n-channel jfet
PAD1 Spice
transistor 2N4393
ls n channel jfet
jfet j112
u406 type
2N5019 "direct replacement"
J201 Replacement
JPAD500
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SD215DE-2
Abstract: AN502 SD211DE-2 SD213DE SD213DE-2 SD214DE-2 SD214DE
Text: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE-2
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SD211DE-2/213DE-2/215DE-2
SD211DE-2
SD213DE-2
SD215DE-2
18-Jul-08
SD215DE-2
AN502
SD211DE-2
SD213DE
SD213DE-2
SD214DE-2
SD214DE
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low noise dual P-Channel JFET
Abstract: transistor TO99 package 2N5116 LS312 equivalent 2N4416 equivalent p-channel dual P-Channel JFET 2n5114 sot23
Text: 2N5114 SERIES SINGLE P-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE 75Ω LOW CAPACITANCE 6pF TO-18 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature
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2N5114
-50mA
500mW
low noise dual P-Channel JFET
transistor TO99 package
2N5116
LS312 equivalent
2N4416 equivalent p-channel
dual P-Channel JFET
2n5114 sot23
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SD21
Abstract: SILICONIX SD21 to72 sd21 SD214DE-2
Text: SD21 ODE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V (BR)DS Min (V) VGS(,h) Max (V) rDSion) Max (Q) SD21 ODE-2 30 1.5 45 @ V q s = 10 V 0.5 2 SD214DE-2 20 1.5 45 @ V q S = 10 V
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ODE-2/214DE-2
SD214DE-2
S-02889--Rev.
21-Dec-00
S-02B89--Rev.
SD21
SILICONIX SD21
to72 sd21
SD214DE-2
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SD210DE
Abstract: AN301 SD214DE
Text: SD210DE/214DE Siliconix NĆChannel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 SD214DE, For applications information see AN301, page 33.
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SD210DE/214DE
SD210DE
SD214DE
SD214DE,
AN301,
P37406Rev.
SD210DE
AN301
SD214DE
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SD210 vishay
Abstract: lateral mosfet audio amplifier SD210 datasheet vishay analog switch circuit using mosfet High-Speed Analog N-Channel DMOS FETs -TO-72 mosfet analog switch circuit AN207 CD74HC138 DG271 DG408
Text: AN207 Vishay Siliconix 12-ns DG611 Switch Family Combines Benefits of CMOS and DMOS Technologies The DG611, DG612, and DG613 are extremely low-power, high-speed analog switches designed to optimize circuit performance in high-speed switching applications. Each of
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AN207
12-ns
DG611
DG611,
DG612,
DG613
DG61X
DG611
DG612
SD210 vishay
lateral mosfet audio amplifier
SD210 datasheet vishay
analog switch circuit using mosfet
High-Speed Analog N-Channel DMOS FETs -TO-72
mosfet analog switch circuit
AN207
CD74HC138
DG271
DG408
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"DUAL N-Channel JFET"
Abstract: ultra low igss pA J176 equivalent
Text: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures
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U/SST440
U/SST440
U/SST441
500mW
"DUAL N-Channel JFET"
ultra low igss pA
J176 equivalent
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P-Channel MOSFET 12V SOT 23
Abstract: LS-31 ultra FAST DMOS FET Switches jfet to 92
Text: J/SST111 SERIES SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated J SERIES SST SERIES TO-92
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J/SST111
360mW
350mW
OT-23
P-Channel MOSFET 12V SOT 23
LS-31
ultra FAST DMOS FET Switches
jfet to 92
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SD215DE-2
Abstract: SD215DE vishay
Text: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMM ARY Part Number V(BH)DS M in (V) v GS(th) Max (V) rDS(on) Max (Q ) Crss Max (pF) SD211DE-2 30 1.5 4 5 V GS= 1 0 V 0.5 2 SD213DE-2
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SD211DE-2/213DE-2/215DE-2
SD211DE-2
SD213DE-2
SD215DE-2
S-02889--Rev.
21-Dec-00
SD215DE-2
SD215DE vishay
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