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    SIMPLE 20 WATTS POWER AMPLIFIER Search Results

    SIMPLE 20 WATTS POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    SIMPLE 20 WATTS POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    planar transformer theory

    Abstract: TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A
    Text: Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.


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    MRF136Y/D MRF136Y planar transformer theory TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A PDF

    1n4740 MOTOROLA

    Abstract: 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740
    Text: MOTOROLA Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.


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    MRF136Y/D MRF136Y 1n4740 MOTOROLA 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740 PDF

    J50 mosfet

    Abstract: J119 fet transistor k 2723 J892 J168 J119 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


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    MRF136 MRF136 AN215A. J50 mosfet J119 fet transistor k 2723 J892 J168 J119 transistor PDF

    hf class AB power amplifier mosfet

    Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
    Text: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


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    MRF136/D MRF136 hf class AB power amplifier mosfet Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973 PDF

    RF coil MRI circuit

    Abstract: circuit mri amplifier ARF475 2643006302 "RF MOSFETs" 2861006802 1kw mosfet ARF475FL RG-188 R7811
    Text: Application Note 1809 September 2010 ARF475FL 128 MHz Pulse Amplifier Richard Frey, P.E. RF Applications Engineer Summary The ARF 475FL contains a push-pull pair of high voltage RF MOSFETs. It is designed to provide a performance and cost competitive alternative to high power RF parts packaged in the “Gemini” ceramic-metal package. The


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    ARF475FL 475FL ARF475FL RF coil MRI circuit circuit mri amplifier ARF475 2643006302 "RF MOSFETs" 2861006802 1kw mosfet RG-188 R7811 PDF

    Untitled

    Abstract: No abstract text available
    Text: STICK-ON SERIES Model ST-PA2 Utility Power Amplifier ANYWHERE YOU NEED. • • • • • Up to 2 Watts RMS into 8 Ω Up to +12 dBu into 600 Ω Quality Utility Amplifier Intercom Driver Music-On-Hold Driver You Need The ST-PA2! The ST-PA2 is a utility power amplifier in the convenient line of STICK-ON products from Radio Design


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    EN55103-2 PDF

    wireless video transmitter circuit

    Abstract: Wireless video IC circuit j682
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.


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    TPV8100B wireless video transmitter circuit Wireless video IC circuit j682 PDF

    6a3 diode zener

    Abstract: 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331
    Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


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    MRF136/D MRF136 6a3 diode zener 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331 PDF

    527 MOSFET TRANSISTOR motorola

    Abstract: vk200* FERROXCUBE MRF134 SELF vk200 Beckman resistor network mrf134 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF134 . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance


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    MRF134 MRF134 AN215A 527 MOSFET TRANSISTOR motorola vk200* FERROXCUBE SELF vk200 Beckman resistor network mrf134 motorola PDF

    MRF136

    Abstract: zener motorola 1N5925A AN211A AN215A AN721 j331 s1170 MRF1364 MOTOROLA S 5068
    Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


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    MRF136/D MRF136 MRF136 zener motorola 1N5925A AN211A AN215A AN721 j331 s1170 MRF1364 MOTOROLA S 5068 PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: MOTOROLA MRF1507 Cancelled The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment.


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    MRF1507/D MRF1507 DEVICEMRF1507/D Nippon capacitors PDF

    Triode 805

    Abstract: Arco 403 arco 406 motorola diode 8296 ZENER A34 1N5925A AN215A AN721 MRF134 MRF134 - 176
    Text: Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance


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    MRF134/D MRF134 Triode 805 Arco 403 arco 406 motorola diode 8296 ZENER A34 1N5925A AN215A AN721 MRF134 MRF134 - 176 PDF

    P-60FAC

    Abstract: 12 TO 220 volt 1000 wat mic music auto level control csi p120-a MODEL SA MT-20-BC Siren horn Generator Siren Sound Generator 5 sound mini audio amplifier 10w transformer 220 volts 60 Hz specifications
    Text: CSI/Speco Amplifiers, Speakers, Sirens and Accessories 60 Watts PA Amplifier Background Sound Amplifiers F-72 Multitester Features c 117/220 VAC or 12 VDC Mobile Use c Heavy Duty Adjustable Chrome Plated Mounting Bracket c AC and DC Fuse Protected c Inputs to Accommodate Microphones, Tape Decks, Phonos, Tuners


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    c117/220 70-volt WAT-10W WAT-10-8 WAT-25 WAT-35* T-7010 P-60FAC 12 TO 220 volt 1000 wat mic music auto level control csi p120-a MODEL SA MT-20-BC Siren horn Generator Siren Sound Generator 5 sound mini audio amplifier 10w transformer 220 volts 60 Hz specifications PDF

    MRF136

    Abstract: mrf136y amplifier 18006-1-Q1 class A push pull power amplifier mrf136y design rf push pull mosfet power amplifier zener motorola 1N4740 1N5925A 319B
    Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 MRF136Y N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up


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    MRF136/D MRF136 MRF136Y MRF136 MRF136/D* mrf136y amplifier 18006-1-Q1 class A push pull power amplifier mrf136y design rf push pull mosfet power amplifier zener motorola 1N4740 1N5925A 319B PDF

    n-channel enhancement mode vmos power fet

    Abstract: DV1201K
    Text: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications


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    DV1201K DV1201K n-channel enhancement mode vmos power fet PDF

    136y

    Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up


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    MRF136 MRF136Y MRF136Y AN215A DL110 136y 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068 PDF

    b 1367 rf transistor

    Abstract: 28V1001
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­ tions and offers a high degree of reliability and ruggedness.


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    TPV8100B TPV8100B b 1367 rf transistor 28V1001 PDF

    bd135 equivalent

    Abstract: TP3069 motorola rf device NF 935 bd135 input impedance transistor tp3069
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Pow er Transistor The TP3069 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3069 also features


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    TP3069 TP3069 bd135 equivalent motorola rf device NF 935 bd135 input impedance transistor tp3069 PDF

    transistor 7808

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF134 N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance


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    MRF134 MRF134, MRF134 68-ohm AN215A transistor 7808 PDF

    ARCO

    Abstract: No abstract text available
    Text: H I INC 5 6 4 2 2 1S_M ZA^CDIL ÖS DE I 85D Sb4EEGS 00454 D DDGQ4SM N-CHANNEL ENHANCEMENT-MODE RF POw E r FETs M DV2860T, DV2860U fa C Q * M/A-COM PHI, INC. The DV2860 is a VMOS N-channel enhancement mode RF power FET. This 60W device is ideal for high power final amplifier applications, push-pull or single end­


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    DV2860T, DV2860U DV2860 7-100pF) ARCO PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­ tions and offers a high degree of reliability and ruggedness.


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    TPV8100B PDF

    J141 mosfet

    Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance


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    MRF161, MRF161 AN215A J141 mosfet MRF-161 fet j141 2191F SELF vk200 k 575 PDF

    Motorola AN211

    Abstract: motorola 6810 aN211 MOTorola atc 7515
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance


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    MRF134 68-ohm AN215Afor Motorola AN211 motorola 6810 aN211 MOTorola atc 7515 PDF

    SELF vk200

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER


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    MRF134 68-ohm AN215A SELF vk200 PDF