Al2O3
Abstract: Inductor CI100505
Text: MATERIAL DATA SHEET Material CI100505 Series Product Line Multilayer Ceramic Chip Inductor Date 04-December-2004 NO. Construction element Material group Material Weight g Materials CAS If applicable Average mass (%) 1 Ceramic Body Ceramic 0.00052 SiO2 -
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CI100505
04-December-2004
Al2O3
Inductor
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SAFDC315MSP0T95R12
Abstract: murata SAW
Text: AUTOMOTIVE AUTOMOTIVE SAW FILTER FOR RKE Murata part number :SAFDC315MSP0T95 Features • Lead free component RoHs compliant . • Passivation layer :SiO2 • AEC-Q200 Compliant Package Dimensions Specification Item 4-1.50±0.15 Nominal Center Frequency(fc)
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SAFDC315MSP0T95
AEC-Q200
15max.
SAFDC315MSP0T95R12
murata SAW
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SAFDC312MSM0T00
Abstract: murata SAW
Text: AUTOMOTIVE AUTOMOTIVE SAW FILTER FOR RKE Murata part number :SAFDC312MSM0T00 Features • Lead free component RoHs compliant . • Passivation layer :SiO2 • AEC-Q200 Compliant Package Dimensions Specification 4-1.50±0.15 Item 3.0±0.2 3.0±0.2 Dot Marking(φ0.5)
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SAFDC312MSM0T00
AEC-Q200
15max.
SAFDC312MSM0T00
murata SAW
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honeywell hr 20
Abstract: HC1773 crystal oscillator burn-in data
Text: Military & Space Products Advance Information DUAL RATE 1773 FIBER OPTIC TRANSCEIVER HC1773 FEATURES • Fabricated with RICMOS IV Bulk CMOS 0.8 µm Process Leff = 0.65 µm • 1Mbps or 20Mbps 1773 format • Total Dose Hardness of ≥3x105 rad(SiO2)
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HC1773
20Mbps
3x105
HC1773
20Mbartment
honeywell hr 20
crystal oscillator burn-in data
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HV200
Abstract: Si3N4
Text: HA-2640/883 Die Characteristics DIE DIMENSIONS: 93 x 68 x 19 mils ± 1 mils 2360 x 1720 x 483µm ± 25.4µm METALLIZATION: Type: Al, 1% Cu Thickness: 16kÅ ± 2kÅ GLASSIVATION: Type: Nitride Si3N4 over Silox (SiO2, 5% Phos.) Silox Thickness: 12kÅ ± 2kÅ
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HA-2640/883
HV200
ISO9000
Si3N4
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murata SAW
Abstract: No abstract text available
Text: SAW RESONATOR FOR RKE AUTOMOTIVE AUTOMOTIVE Murata part number : SARCC868M35BXM0 Features • Lead free component RoHs Compliant . • Passivation layer :SiO2 • AECQ200 compliant Specification Package Dimensions Item Specification(25±2°C) 3.0±0.2 3.0±0.2
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SARCC868M35BXM0
AECQ200
075MHz
15max.
SARCC868M35BXM0R12.
2000pcs/reel
murata SAW
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Untitled
Abstract: No abstract text available
Text: Product content sheet Name: SMD Crystal Type: ABMSG Glass Glass Country of origin: China Structural Substances Part Cover Part (ms/ / \ Weight Material Structural At203 5.633 ms Tio2 Cr2O3 MnO2 Co3O4 sio2 Meo Fe2O3 CaO 25.050 ms Ceramic 1 31 7-36-8 7183-46-2
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At203
Nb205
8i203
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HG-2
Abstract: 3060A 7471A AES chips E.04
Text: Materials Declaration Package Body Size LeadCount Option Item Epoxy resin SiO2 Filler Phenol Resin Antimony_Sb2O3 Brominated Resin Item Cu Fe P Zn SOIC 150 mils 8 Pb-Free Molding Compound % of Compound Weight g 10 4.44 E-03 85 3.77 E-02 3 1.33 E-03 1.5 6.66 E-04
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6010B
HG-2
3060A
7471A
AES chips
E.04
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275 nm
Abstract: No abstract text available
Text: rev.1.0 05.05.15 UVMAX270-50 • • • • • • • Deep Ultraviolet Light Emission Source 275 nm, 30-50 mW Multi chip LED array Thermistor TEC optionally TO3 metal can with SiO2 glass lens Water Sterilization, DNA Sequencing Description UVMAX270 is a series of AlGaN based deep UV multi chip LED arrays, typically utilizing 4-5 parallel strings (common cathode),
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UVMAX270-50
UVMAX270
900mA,
275 nm
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Untitled
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-HL5N • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO5 metal can Hemispherical SiO2 lens Beam angle 6 deg. Description DUV-HL5N is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO5 package, utilizing a
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hx6228
Abstract: MIL-PRF38535
Text: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)
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HX6228
1x106
1x1011
1x1012
1x10-10
32-Lead
hx6228
MIL-PRF38535
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HR2000
Abstract: HR2010 HR2065 HR2090 HR2210 HR2125 HR2340 "rad" sram
Text: RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Total Dose Hardness ≥1x106 rad SiO2 • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)
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HR2000
1x106
1x109
1x1012
1x10-10
1x1014/cm2
HR2000
HR2010
HR2065
HR2090
HR2210
HR2125
HR2340
"rad" sram
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SAFDC868MSN0X90R12
Abstract: SAFDC murata saw filter murata SAW
Text: AUTOMOTIVE SAW FILTER FOR RKE Murata part number :SAFDC868MSN0X90 Features • Lead free component RoHs compliant . Passivation layer :SiO2 AEC-Q200 Compliant Package Dimensions Specification Item 4-1.50±0.15 3.0±0.2 3.0±0.2 Dot Marking(0.5)
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SAFDC868MSN0X90
AEC-Q200
300kHz
15max.
MSN0X90
SAFDC868MSN0X90R12
SAFDC
murata saw filter
murata SAW
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LRIS64K
Abstract: DSASW003741
Text: TN0193 Technical note LRIS64K bumped die description Product information • Product name: LRIS64K Wafer and die features July 2010 Wafer diameter: 8 inches Wafer thickness: 180 µm Die identification: M24RF64A1 Die finishing front side : SiO2 Die finishing (back side):
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TN0193
LRIS64K
LRIS64K
M24RF64A1
DSASW003741
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Untitled
Abstract: No abstract text available
Text: MAX 245°C PRODUCT FAMILY Material CAS Number Alumina Ceramic Al2O3 SiO2 silicon dioxide 1344-28-1 14808-60-7 Conductor Thick Film Ag Pd Resistor Thick Film MSL 1 % Normalize for BOM 0.8800 Wt. Of BOM Item (g) % by Wt (Comp. Item) mg/unit 0.1590 7440-22-4
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honeywell hx3000
Abstract: HX306G HX311G HX303G HX3000 HX314G
Text: HIGH PERFORMANCE SOI GATE ARRAYS HX3000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.28 µm Leff RICMOS V SOI Process • Maximum Clock Rates >250 MHz • Array Sizes to 1M Usable Gates • Total Dose Hardness ≥3x105 rad(SiO2 )
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HX3000
3x105
1x106
1x10-10
honeywell hx3000
HX306G
HX311G
HX303G
HX3000
HX314G
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Untitled
Abstract: No abstract text available
Text: MAX 260°C RoHS Compliant PRODUCT FAMILY Material CAS Number Alumina Ceramic Al2O3 SiO2 silicon dioxide 1344-28-1 14808-60-7 Conductor Thick Film Ag Resistor Thick Film MSL 1 % Normalize for BOM 0.8800 Wt. Of BOM Item (g) % by Wt (Comp. Item) mg/unit 0.1789
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Untitled
Abstract: No abstract text available
Text: ELEMENTAL ANALYSIS MAX 260°C 245°C RoHS Compliant PRODUCT FAMILY Material CAS Number Alumina Ceramic Al2O3 SiO2 1344-28-1 14808-60-7 Conductor Thick Film Ag Pd Resistor Thick Film MSL 1 % Normalize for BOM 0.4045 Wt. Of BOM Item g % by Wt (Comp. Item)
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Untitled
Abstract: No abstract text available
Text: MAX 260°C RoHS Compliant PRODUCT FAMILY Material CAS Number Alumina Ceramic Al2O3 SiO2 silicon dioxide 1344-28-1 14808-60-7 Conductor Thick Film Ag Resistor Thick Film MSL 1 % Normalize for BOM 0.8800 Wt. Of BOM Item (g) % by Wt (Comp. Item) mg/unit 0.1988
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Untitled
Abstract: No abstract text available
Text: MAX 245°C PRODUCT FAMILY Material CAS Number Alumina Ceramic Al2O3 SiO2 silicon dioxide 1344-28-1 14808-60-7 Conductor Thick Film Ag Pd Resistor Thick Film MSL 1 % Normalize for BOM 0.8800 Wt. Of BOM Item (g) % by Wt (Comp. Item) mg/unit 0.2060 7440-22-4
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Untitled
Abstract: No abstract text available
Text: MAX 245°C PRODUCT FAMILY Material CAS Number Alumina Ceramic Al2O3 SiO2 silicon dioxide 1344-28-1 14808-60-7 Conductor Thick Film Ag Pd Resistor Thick Film MSL 1 % Normalize for BOM 0.8800 Wt. Of BOM Item (g) % by Wt (Comp. Item) mg/unit 0.2341 7440-22-4
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Untitled
Abstract: No abstract text available
Text: MAX 260°C RoHS Compliant PRODUCT FAMILY Material CAS Number Alumina Ceramic Al2O3 SiO2 silicon dioxide 1344-28-1 14808-60-7 Conductor Thick Film Ag Pd 7440-22-4 7440-05-3 Resistor Thick Film RuO2 PbO SiO2 (silicon dioxide) B2O3 12036-10-1 1317-36-8 14808-60-7
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It100
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Untitled
Abstract: No abstract text available
Text: MAX 260°C RoHS Compliant PRODUCT FAMILY Material CAS Number Alumina Ceramic Al2O3 SiO2 silicon dioxide 1344-28-1 14808-60-7 Conductor Thick Film Ag Pd 7440-22-4 7440-05-3 Resistor Thick Film RuO2 PbO SiO2 (silicon dioxide) B2O3 12036-10-1 1317-36-8 14808-60-7
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Untitled
Abstract: No abstract text available
Text: MAX 260°C RoHS Compliant PRODUCT FAMILY Material CAS Number Alumina Ceramic Al2O3 SiO2 silicon dioxide 1344-28-1 14808-60-7 Conductor Thick Film Ag Resistor Thick Film MSL 1 % Normalize for BOM 0.8800 Wt. Of BOM Item (g) % by Wt (Comp. Item) mg/unit 0.1184
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